SiRA20BDP
www.vishay.com
Vishay Siliconix
N-Channel 25 V (D-S) MOSFET
FEATURES
PowerPAK® SO-8 Single
D
5
D
6
D
7
• TrenchFET® Gen IV power MOSFET
D
8
• Very low RDS x Qg figure-of-merit (FOM)
• Leadership RDS(on) minimizes power loss from
conduction
• 100 % Rg and UIS tested
6.
15
m
m
1
m
5m
5.1
Top View
4
G
Bottom View
3
S
2
S
1
S
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
D
• Battery management
PRODUCT SUMMARY
VDS (V)
• DC/DC converters
25
• Hot swap switch
RDS(on) max. (Ω) at VGS = 10 V
0.00058
RDS(on) max. (Ω) at VGS = 4.5 V
0.00082
G
• OR-ing FET
Qg typ. (nC)
54
ID (A) a
335
S
Single
N-Channel MOSFET
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK SO-8
SIRA20BDP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C)
SYMBOL
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed drain current (t = 100 μs)
ID
IDM
Continuous source-drain diode current
TC = 25 °C
TA = 25 °C
IS
Single pulse avalanche current
Single pulse avalanche energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
TC = 70 °C
Maximum power dissipation
TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature) c
PD
TJ, Tstg
LIMIT
25
+16 / -12
335
268
82 b, c
66 b, c
350
94.5
5.6 b, c
90
405
104
67
6.3 b, c
4 b, c
-55 to +150
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
Maximum junction-to-ambient b
t ≤ 10 s
RthJA
15
20
°C/W
0.9
1.2
Maximum junction-to-case (drain)
Steady state
RthJC
Notes
a. TC = 25 °C
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 54 °C/W
S21-0335-Rev. C, 05-Aprr-2021
Document Number: 66830
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiRA20BDP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
Static
Drain-source breakdown voltage
VDS
VGS = 0 V, ID = 250 μA
25
-
-
ΔVDS/TJ
ID = 10 mA
-
17
-
VGS(th) temperature coefficient
ΔVGS(th)/TJ
ID = 250 μA
-
-5.4
-
Gate-source threshold voltage
VDS temperature coefficient
mV/°C
VGS(th)
VDS = VGS, ID = 250 μA
1.0
-
2.1
V
Gate-source leakage
IGSS
VDS = 0 V, VGS = +16 V / -12 V
-
-
± 100
nA
Zero gate voltage drain current
IDSS
On-state drain current a
ID(on)
Drain-source on-state resistance a
Forward transconductance a
RDS(on)
gfs
VDS = 25 V, VGS = 0 V
-
-
1
VDS = 25 V, VGS = 0 V, TJ = 55 °C
-
-
10
VDS ≥ 5 V, VGS =10 V
40
-
-
VGS = 10 V, ID = 20 A
-
0.00048
0.00058
VGS = 4.5 V, ID = 20 A
-
0.00063
0.00082
VDS = 15 V, ID = 60 A
-
197
-
-
9950
-
-
3140
-
-
230
-
-
124
186
-
54
81
-
30
-
-
6.2
-
μA
A
Ω
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Output charge
Qoss
VDS = 10 V, VGS = 0 V
-
91
-
Gate resistance
Rg
f = 1 MHz
0.2
0.9
1.8
-
17
35
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 10 V, VGS = 10 V, ID = 20 A
VDS = 10 V, VGS = 4.5 V, ID = 20 A
td(on)
tr
td(off)
VDD = 10 V, RL = 0.5 Ω, ID ≅ 20 A,
VGEN = 10 V, Rg = 1 Ω
-
6
15
-
55
110
tf
-
7
15
td(on)
-
50
100
-
65
130
-
60
120
-
25
50
tr
td(off)
VDD = 10 V, RL = 0.5 Ω, ID ≅ 20 A,
VGEN = 4.5 V, Rg = 1 Ω
tf
pF
nC
Ω
ns
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulse diode forward current
ISM
Body diode voltage
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
TC = 25 °C
IS = 10 A, VGS = 0 V
IF = 10 A, di/dt = 100 A/μs,
TJ = 25 °C
-
-
94.5
-
-
350
-
0.72
1.1
V
-
56
110
ns
-
75
150
nC
-
30
-
-
26
-
A
ns
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S21-0335-Rev. C, 05-Aprr-2021
Document Number: 66830
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiRA20BDP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
300
10000
10000
300
VGS = 10 V thru 4 V
1000
VGS = 3 V
150
100
100
1000
200
150
1st line
2nd line
200
2nd line
ID - Drain Current (A)
250
1st line
2nd line
2nd line
ID - Drain Current (A)
250
TC = 25 °C
100
100
50
50
0
0
TC = 125 °C
10
0
0.5
1.0
1.5
2.0
2.5
TC = -55 °C
10
0
3.0
1
2
3
4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
Axis Title
Axis Title
10000
0.0010
10000
100 000
1000
1st line
2nd line
0.0006
VGS = 10 V
0.0004
100
Ciss
1000
10 000
1st line
2nd line
VGS = 4.5 V
2nd line
C - Capacitance (pF)
2nd line
RDS(on) - On-Resistance (Ω)
0.0008
Coss
100
1000
0.0002
Crss
10
0.0000
50
100
150
200
250
10
0
300
5
10
20
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
Axis Title
VDS = 10 V
1000
1st line
2nd line
VDS = 5 V
VDS = 15 V
4
100
2
10
0
20
40
60
80
100
120
140
2nd line
RDS(on) - On-Resistance (Normalized)
8
6
10000
1.6
ID = 20 A
0
25
Axis Title
10000
10
2nd line
VGS - Gate-to-Source Voltage (V)
15
ID = 20 A
1.4
VGS = 10 V
1000
1.2
VGS = 4.5 V
1.0
100
0.8
10
0.6
-50
-25
0
25
50
75
100 125 150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S21-0335-Rev. C, 05-Aprr-2021
1st line
2nd line
0
100
Document Number: 66830
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiRA20BDP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
100
10000
2.0
10000
2nd line
VGS(th) (V)
1
1000
1.6
ID = 250 μA
1st line
2nd line
1000
1st line
2nd line
2nd line
IS - Source Current (A)
1.8
TJ = 25 °C
TJ = 150 °C
10
1.4
100
1.2
100
0.1
1.0
10
0.01
0
0.2
0.4
0.6
0.8
0.8
1.0
10
-50
-25
0
25
50
75
100 125 150
VSD - Source-to-Drain Voltage (V)
TJ - Junction Temperature (°C)
Source-Drain Diode Forward Voltage
Threshold Voltage
Axis Title
Axis Title
0.0024
10000
10000
200
1st line
2nd line
0.0012
TJ = 125 °C
1000
2nd line
P - Power (W)
1000
100
120
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
160
0.0018
80
100
0.0006
40
TJ = 25 °C
10
0.0000
0
2
4
6
8
0
0.01
10
0.1
1
10
100
10
1000
VGS - Gate-to-Source Voltage (V)
t - Time (s)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
1000
10000
ID(ON) limited
100 μs
1 ms 1000
10
10 ms
100 ms
1
10 s
0.1
TA = 25 °C,
single pulse
1st line
2nd line
2nd line
ID - Drain Current (A)
100
IDM limited
Limited by RDS(on) a
100
1s
DC
BVDSS limited
0.01
0.01
10
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
Safe Operating Area, Junction-to-Ambient
Note
a. VGS > minimum VGS at which RDS(on) is specified
S21-0335-Rev. C, 05-Aprr-2021
Document Number: 66830
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiRA20BDP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
400
10000
200
10000
100
1000
120
1st line
2nd line
200
2nd line
P - Power (W)
1000
1st line
2nd line
2nd line
ID - Drain Current (A)
160
300
80
100
100
40
10
0
0
25
50
75
100
125
150
10
0
0
25
50
75
100
125
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating a
Power, Junction-to-Case
150
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S21-0335-Rev. C, 05-Aprr-2021
Document Number: 66830
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiRA20BDP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
1
10000
Notes
0.2
1000
PDM
0.1
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Duty cycle = 0.5
0.1
t1
0.05
t2
t1
1. Duty cycle, D = t
2
2. Per unit base = RthJA = 54 °C/W
0.02
3. TJM - TA = PDMZthJA
0.001
0.01
(t)
4. Surface mounted
Single pulse
0.01
0.0001
100
0.1
1
10
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
1
10000
0.2
1000
0.1
0.1
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Duty cycle = 0.5
0.05
Single pulse
0.02
0.01
0.0001
100
10
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?66830.
S21-0335-Rev. C, 05-Aprr-2021
Document Number: 66830
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8, (Single/Dual)
L
H
E2
K
E4
θ
D4
W
1
M
1
Z
2
D5
D2
e
2
D1
D
2
D
3
4
θ
4
b
3
L1
E3
θ
A1
Backside View of Single Pad
H
K
E2
E4
L
1
D1
D5
2
D2
Detail Z
K1
2
E1
E
D3 (2x) D4
c
A
θ
3
4
Notes
1. Inch will govern.
2 Dimensions exclusive of mold gate burrs.
3. Dimensions exclusive of mold flash and cutting burrs.
DIM.
A
A1
b
c
D
D1
D2
D3
D4
D5
E
E1
E2
E3
E4
e
K
K1
H
L
L1
W
M
b
D2
E3
Backside View of Dual Pad
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
0.97
1.04
0.41
0.28
5.15
4.90
3.76
1.50
0.57 typ.
3.98 typ.
6.15
5.89
3.66
3.78
0.75 typ.
1.27 BSC
1.27 typ.
0.61
0.61
0.13
0.25
0.125 typ.
1.12
0.05
0.51
0.33
5.26
5.00
3.91
1.68
0.038
0
0.013
0.009
0.199
0.189
0.140
0.052
0.044
0.002
0.020
0.013
0.207
0.197
0.154
0.066
6.25
5.99
3.84
3.91
0.238
0.228
0.137
0.145
0.71
0.71
0.20
12°
0.36
0.022
0.020
0.020
0.002
0°
0.006
0.041
0.016
0.011
0.203
0.193
0.148
0.059
0.0225 typ.
0.157 typ.
0.242
0.232
0.144
0.149
0.030 typ.
0.050 BSC
0.050 typ.
0.024
0.024
0.005
0.010
0.005 typ.
0.33
0.23
5.05
4.80
3.56
1.32
6.05
5.79
3.48
3.68
0.56
0.51
0.51
0.06
0°
0.15
0.246
0.236
0.151
0.154
0.028
0.028
0.008
12°
0.014
ECN: S17-0173-Rev. L, 13-Feb-17
DWG: 5881
Revison: 13-Feb-17
1
Document Number: 71655
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single
0.260
(6.61)
0.150
(3.81)
0.050
0.174
(4.42)
0.154
(1.27)
0.026
(0.66)
(3.91)
0.024
(0.61)
0.050
0.032
0.040
(1.27)
(0.82)
(1.02)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72599
Revision: 21-Jan-08
www.vishay.com
15
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 09-Jul-2021
1
Document Number: 91000
