SiRA84BDP
www.vishay.com
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES
PowerPAK® SO-8 Single
D
5
D
6
D
7
D
8
• TrenchFET® Gen IV power MOSFET
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
6.
15
m
m
1
5
5.1
mm
Top View
4
G
Bottom View
3
S
2
S
1
S
• Synchronous rectification
• VRMs and embedded DC/DC
0.0046
RDS(on) max. () at VGS = 4.5 V
0.0071
ID (A) a
Configuration
G
30
RDS(on) max. () at VGS = 10 V
Qg typ. (nC)
D
• High power density DC/DC
PRODUCT SUMMARY
VDS (V)
APPLICATIONS
10.6
S
70
N-Channel MOSFET
Single
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK SO-8
SiRA84BDP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C)
SYMBOL
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed drain current (t = 100 μs)
ID
IDM
Continuous source-drain diode current
TC = 25 °C
TA = 25 °C
IS
Single pulse avalanche current
Single pulse avalanche energy
L = 0.1 mH
IAS
EAS
Maximum power dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d, e
TJ, Tstg
LIMIT
30
+20, -16
70
56
22 b, c
18 b, c
150
33
3.3 b, c
15
11.3
36
23
3.7 b, c
2.4 b, c
-55 to +150
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SMYBOL
TYPICAL
MAXIMUM
UNIT
Maximum junction-to-ambient b, f
t 10 s
RthJA
28
34
°C/W
2.7
3.5
Maximum junction-to-case (drain)
Steady state
RthJC
Notes
a. Based on TC = 25 °C
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 72 °C/W
S19-0227-Rev. A, 11-Mar-2019
Document Number: 77068
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiRA84BDP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
VDS
VGS = 0 V, ID = 250 μA
30
-
-
VDSt
VGS = 0 V, ID(aval) = 40 A,
ttranscient 50 ns
36
-
-
-
15.2
-
-
-4.8
-
UNIT
Static
Drain-source breakdown voltage
Drain-source breakdown voltage (c)
(transient)
VDS temperature coefficient
VDS/TJ
VGS(th) temperature coefficient
VGS(th)/TJ
Gate-source threshold voltage
ID = 250 μA
V
mV/°C
VGS(th)
VDS = VGS, ID = 250 μA
1.2
-
2.4
V
Gate-source leakage
IGSS
VDS = 0 V, VGS = +20, -16 V
-
-
± 100
nA
Zero gate voltage drain current
IDSS
On-state drain current a
ID(on)
Drain-source on-state resistance a
Forward transconductance a
VDS = 30 V, VGS = 0 V
-
-
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
-
-
10
VDS 5 V, VGS = 10 V
30
-
-
A
VGS = 10 V, ID = 15 A
-
0.0033
0.0046
VGS = 4.5 V, ID = 10 A
-
0.0052
0.0071
VDS = 15 V, ID = 25 A
-
55
-
-
1050
-
-
390
-
-
80
0.16
RDS(on)
gfs
μA
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
VDS = 15 V, VGS = 0 V, f = 1 MHz
Crss/Ciss ratio
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Output charge
Qoss
Rg
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDS = 15 V, VGS = 10 V, ID = 10 A
VDS = 15 V, VGS = 4.5 V, ID = 10 A
-
0.08
-
20.7
32
-
10.6
16
-
3.6
-
-
4.5
-
VDS = 15 V, VGS = 0 V
-
10
-
f = 1 MHz
0.3
1.4
2.8
-
10
20
-
5
10
-
20
40
tf
-
5
10
td(on)
-
20
40
-
70
140
-
20
40
-
15
30
td(on)
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 10 V, Rg = 1
tr
td(off)
tr
td(off)
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 4.5 V, Rg = 1
tf
pF
nC
ns
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulse diode forward current a
ISM
Body diode voltage
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
TC = 25 °C
IS = 10 A
IF = 10 A, di/dt = 100 A/μs,
TJ = 25 °C
-
-
33
-
-
150
-
0.8
1.1
V
-
20
40
ns
-
6
15
nC
-
9
-
-
11
-
A
ns
Notes
a. Pulse test: pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Based on characterization, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S19-0227-Rev. A, 11-Mar-2019
Document Number: 77068
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiRA84BDP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
100
10000
100
VGS = 10 V thru 5 V
VGS = 4 V
40
100
VGS = 3 V
40
TC = 25 °C
100
20
TC = -55 °C
TC = 125 °C
10
0
0
0.5
1
1.5
2
2.5
0
3
10
0
1
2
Transfer Characteristics
Output Characteristics
Axis Title
Axis Title
10000
10000
1500
1200
0.006
VGS = 10 V
100
0.002
Ciss
1000
900
1st line
2nd line
1000
VGS = 4.5 V
2nd line
C - Capacitance (pF)
0.008
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
0.010
600
10
0
20
40
60
80
Crss
10
0
100
0
5
10
25
On-Resistance vs. Drain Current
Capacitance
VDS = 15 V
1000
VDS = 10 V
1st line
2nd line
6
VDS = 20 V
100
2
10
0
5
10
15
20
25
10000
1.6
2nd line
RDS(on) - On-Resistance (Normalized)
8
30
Axis Title
10000
ID = 10 A
2nd line
VGS - Gate-to-Source Voltage (V)
20
VDS - Drain-to-Source Voltage (V)
Axis Title
0
15
ID - Drain Current (A)
10
4
100
Coss
300
0
4
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
0.004
3
ID = 15 A
VGS = 10 V
1.4
1000
1.2
VGS = 4.5 V
1.0
100
0.8
10
0.6
-50
-25
0
25
50
75
100 125 150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S19-0227-Rev. A, 11-Mar-2019
1st line
2nd line
20
1000
60
1st line
2nd line
1000
60
2nd line
ID - Drain Current (A)
80
1st line
2nd line
2nd line
ID - Drain Current (A)
80
Document Number: 77068
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiRA84BDP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
TJ = 150 °C
10
1000
TJ = 25 °C
1
100
0.1
0.012
1000
0.008
TJ = 125 °C
100
0.004
TJ = 25 °C
0.2
0.4
0.6
0.8
1.0
10
0
10
0
10000
0
1.2
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
Axis Title
10000
2.2
200
10000
2.0
150
1.6
100
1.4
1000
1st line
2nd line
ID = 250 μA
2nd line
P - Power (W)
1000
1.8
1st line
2nd line
2nd line
VGS(th) - Treshold Voltage (V)
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
0.016
1st line
2nd line
2nd line
IS - Source Current (A)
100
100
100
50
1.2
10
1.0
-50
-25
0
25
50
75
0
0.0001 0.001 0.01
100 125 150
0.1
1
10
100
10
1000
TJ - Junction Temperature (°C)
t - Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
1000
10000
Limited by RDS(on) a
IDM limited
ID(ON) limited
1000
10
100 μs
1 ms
1
0.1
10 ms
100 ms100
1s
10 s
TA = 25 °C,
single pulse
1st line
2nd line
2nd line
ID - Drain Current (A)
100
DC
0.01
0.01
BVDSS limited
0.1
1
10
10
100
VDS - Drain-to-Source Voltage (V)
Safe Operating Area
S19-0227-Rev. A, 11-Mar-2019
Document Number: 77068
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiRA84BDP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
80
10000
50
10000
100
1000
30
1st line
2nd line
40
2nd line
P - Power (W)
1000
1st line
2nd line
2nd line
ID - Drain Current (A)
40
60
20
100
20
10
10
0
0
25
50
75
100
125
150
10
0
0
25
50
75
100
125
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating a
Power, Junction-to-Case
150
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S19-0227-Rev. A, 11-Mar-2019
Document Number: 77068
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiRA84BDP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
1
10000
0.2
Notes
0.1
PDM
1000
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Duty cycle = 0.5
0.1
t1
0.05
t2
t1
1. Duty cycle, D = t
2
2. Per unit base = RthJA = 72 °C/W
0.02
3. TJM - TA = PDMZthJA
0.01
0.0001
100
(t)
4. Surface mounted
Single pulse
0.001
0.01
0.1
1
10
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
10000
Duty cycle = 0.5
1000
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
1
0.2
0.1
0.05
100
0.02
Single pulse
0.1
0.0001
10
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?77068.
S19-0227-Rev. A, 11-Mar-2019
Document Number: 77068
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8, (Single/Dual)
L
H
E2
K
E4
θ
D4
W
1
M
1
Z
2
D5
D2
e
2
D1
D
2
D
3
4
θ
4
b
3
L1
E3
θ
A1
Backside View of Single Pad
H
K
E2
E4
L
1
D1
D5
2
D2
Detail Z
K1
2
E1
E
D3 (2x) D4
c
A
θ
3
4
Notes
1. Inch will govern.
2 Dimensions exclusive of mold gate burrs.
3. Dimensions exclusive of mold flash and cutting burrs.
DIM.
A
A1
b
c
D
D1
D2
D3
D4
D5
E
E1
E2
E3
E4
e
K
K1
H
L
L1
W
M
b
D2
E3
Backside View of Dual Pad
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
0.97
1.04
0.41
0.28
5.15
4.90
3.76
1.50
0.57 typ.
3.98 typ.
6.15
5.89
3.66
3.78
0.75 typ.
1.27 BSC
1.27 typ.
0.61
0.61
0.13
0.25
0.125 typ.
1.12
0.05
0.51
0.33
5.26
5.00
3.91
1.68
0.038
0
0.013
0.009
0.199
0.189
0.140
0.052
0.044
0.002
0.020
0.013
0.207
0.197
0.154
0.066
6.25
5.99
3.84
3.91
0.238
0.228
0.137
0.145
0.71
0.71
0.20
12°
0.36
0.022
0.020
0.020
0.002
0°
0.006
0.041
0.016
0.011
0.203
0.193
0.148
0.059
0.0225 typ.
0.157 typ.
0.242
0.232
0.144
0.149
0.030 typ.
0.050 BSC
0.050 typ.
0.024
0.024
0.005
0.010
0.005 typ.
0.33
0.23
5.05
4.80
3.56
1.32
6.05
5.79
3.48
3.68
0.56
0.51
0.51
0.06
0°
0.15
0.246
0.236
0.151
0.154
0.028
0.028
0.008
12°
0.014
ECN: S17-0173-Rev. L, 13-Feb-17
DWG: 5881
Revison: 13-Feb-17
1
Document Number: 71655
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single
0.260
(6.61)
0.150
(3.81)
0.050
0.174
(4.42)
0.154
(1.27)
0.026
(0.66)
(3.91)
0.024
(0.61)
0.050
0.032
0.040
(1.27)
(0.82)
(1.02)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72599
Revision: 21-Jan-08
www.vishay.com
15
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Vishay
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
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Revision: 09-Jul-2021
1
Document Number: 91000