SIRA88BDP-T1-GE3

SiRA88BDP www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PowerPAK® SO-8 Single D 5 D 6 D 7 D 8 • TrenchFET® Gen IV power MOSFET • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 6. 15 m m 1 5 5.1 mm Top View 4 G Bottom View 3 S 2 S 1 S D • High power density DC/DC • Synchronous rectification PRODUCT SUMMARY VDS (V) APPLICATIONS • Power conversion 30 RDS(on) max. () at VGS = 10 V 0.00683 RDS(on) max. () at VGS = 4.5 V 0.01050 G • Load switch Qg typ. (nC) 6.2 S ID (A) a 40 N-Channel MOSFET Configuration Single ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK SO-8 SiRA88BDP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) ID IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS Maximum power dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e TJ, Tstg LIMIT 30 +20, -16 40 32 19 b, c 15 b, c 90 16 3.4 b, c 10 5 17 11 3.8 b, c 2.4 b, c -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SMYBOL TYPICAL MAXIMUM UNIT Maximum junction-to-ambient b, f t  10 s RthJA 25 33 °C/W 5.5 7.2 Maximum junction-to-case (drain) Steady state RthJC Notes a. Based on TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 70 °C/W S19-0416-Rev. A, 13-May-2019 Document Number: 77158 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiRA88BDP www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0 V, ID = 250 μA 30 - - VDSt VGS = 0 V, ID(aval) = 20 A, ttranscient  50 ns 36 - - UNIT Static Drain-source breakdown voltage Drain-source breakdown voltage (c) (transient) VDS temperature coefficient VDS/TJ VGS(th) temperature coefficient VGS(th)/TJ Gate-source threshold voltage ID = 250 μA - 17 - - -4.4 - V mV/°C VGS(th) VDS = VGS, ID = 250 μA 1.2 - 2.4 V Gate-source leakage IGSS VDS = 0 V, VGS = +20, -16 V - - ± 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a VDS = 30 V, VGS = 0 V - - 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C - - 10 VDS  5 V, VGS = 10 V 30 - - VGS = 10 V, ID = 10 A - 0.00550 0.00683 VGS = 4.5 V, ID = 8 A - 0.00830 0.01050 VDS = 10 V, ID = 20 A - 42 - - 680 - - 266 - - 54 0.16 RDS(on) gfs μA A  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss VDS = 15 V, VGS = 0 V, f = 1 MHz Crss/Ciss ratio Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Output charge Qoss Rg Gate resistance Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = 15 V, VGS = 10 V, ID = 10 A VDS = 15 V, VGS = 4.5 V, ID = 10 A - 0.08 - 12.2 19 - 6.2 9.5 - 2.3 - - 2.3 - VDS = 15 V, VGS = 0 V - 7 - f = 1 MHz 0.3 1.5 3 - 8 15 - 5 10 - 15 30 tf - 5 10 td(on) - 12 25 - 55 110 - 15 30 - 12 25 td(on) VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 10 V, Rg = 1  tr td(off) tr td(off) VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 4.5 V, Rg = 1  tf pF nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current a ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = 5 A IF = 5 A, di/dt = 100 A/μs, TJ = 25 °C - - 16 - - 90 - 0.8 1.1 V - 15 30 ns - 5 10 nC - 7 - - 8 - A ns Notes a. Pulse test: pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing c. Based on characterization, not subject to production testing   Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S19-0416-Rev. A, 13-May-2019 Document Number: 77158 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiRA88BDP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 10000 100 VGS = 10 V thru 5 V 40 100 1000 60 1st line 2nd line 1000 VGS = 4 V 60 2nd line ID - Drain Current (A) 80 1st line 2nd line 40 TC = 25 °C 20 20 VGS = 3 V 0.5 1.0 1.5 2.0 2.5 10 0 10 0 TC = -55 °C TC = 125 °C 0 0 3.0 1 2 4 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title 5 Axis Title 10000 10000 1000 800 0.015 VGS = 4.5 V 0.010 100 0.005 10 0 20 40 60 80 1000 600 400 Coss 200 VGS = 10 V 0 Ciss 1st line 2nd line 1000 2nd line C - Capacitance (pF) 0.020 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 3 VDS - Drain-to-Source Voltage (V) 0.025 Crss 10 0 5 10 15 20 25 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance Axis Title 1000 1st line 2nd line VDS = 10 V VDS = 20 V 4 100 2 10 0 3 6 9 12 15 2nd line RDS(on) - On-Resistance (Normalized) VDS = 15 V 6 10000 1.6 ID = 10 A 8 30 Axis Title 10000 0 100 0 100 10 2nd line VGS - Gate-to-Source Voltage (V) 100 ID = 10 A VGS = 10 V 1.4 1000 1.2 VGS = 4.5 V 1.0 100 0.8 10 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S19-0416-Rev. A, 13-May-2019 1st line 2nd line 2nd line ID - Drain Current (A) 80 Document Number: 77158 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiRA88BDP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 0.03 10000 1 TJ = 25 °C 100 0.1 1000 0.02 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 1000 1st line 2nd line 2nd line IS - Source Current (A) 0.025 TJ = 150 °C 10 0.015 TJ = 125 °C 0.01 100 0.005 TJ = 25 °C 0 0.2 0.4 0.6 0.8 1.0 10 0 10 0.01 1.2 0 2 4 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 10000 2.0 10000 200 1.8 160 1.4 100 1.2 120 1st line 2nd line 1st line 2nd line ID = 250 μA 1000 2nd line P - Power (W) 1000 1.6 2nd line VGS(th) (V) 6 80 100 40 1.0 10 0.8 -50 -25 0 25 50 75 0 0.0001 0.001 0.01 100 125 150 0.1 1 10 100 10 1000 TJ - Junction Temperature (°C) t - Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient Axis Title 1000 10000 Limited by RDS(on) a IDM limited ID(ON) limited 1000 10 100 μs 1 ms 1 0.1 10 ms 100 ms 100 1s 10 s DC TA = 25 °C, single pulse BVDSS limited 0.01 0.01 1st line 2nd line 2nd line ID - Drain Current (A) 100 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area Note a. VGS > minimum VGS at which RDS(on) is specified S19-0416-Rev. A, 13-May-2019 Document Number: 77158 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiRA88BDP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 50 20 1st line 2nd line 20 100 10 1000 15 1st line 2nd line 1000 30 2nd line P - Power (W) 40 2nd line ID - Drain Current (A) 10000 25 10 100 5 10 0 0 25 50 75 100 125 150 10 0 0 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating a Power, Junction-to-Case 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S19-0416-Rev. A, 13-May-2019 Document Number: 77158 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiRA88BDP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 1 10000 Notes 0.2 1000 PDM 0.1 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.1 t1 0.05 t2 t1 1. Duty cycle, D = t 2 2. Per unit base = RthJA = 70 °C/W 0.02 3. TJM - TA = PDMZthJA (t) 4. Surface mounted Single pulse 0.01 0.0001 100 0.001 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 10000 Duty cycle = 0.5 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.2 100 0.1 0.05 0.02 0.1 0.0001 Single pulse 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case                       Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77158. S19-0416-Rev. A, 13-May-2019 Document Number: 77158 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix Case Outline for PowerPAK® 1212-SWLH and PowerPAK® 1212-8SH A 0.10 C Z D 8 7 6 5 1 2 3 4 D1 5 6 b 4 3 7 8 2 1 K E E1 K1 2x L B 0.10 C 2x e 0.10 M C A B 0.05 M C Pin 1 dot 0.10 C A C 0.08 C A1 A3 DIM. MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.82 0.90 0.98 0.032 0.035 0.038 A1 0.00 - 0.05 0.000 - 0.002 A3 0.20 ref. 0.008 ref. b 0.25 0.30 0.35 0.010 0.012 0.014 D 3.20 3.30 3.40 0.126 0.130 0.134 D1 2.15 2.25 2.35 0.085 0.089 0.093 E 3.20 3.30 3.40 0.126 0.130 0.134 E1 1.60 1.70 1.80 0.063 0.067 0.071 e 0.65 bsc. K 0.76 ref. 0.030 ref. K1 0.41 ref. 0.016 ref. L 0.33 Z 0.43 0.525 ref. 0.026 bsc. 0.53 0.013 0.017 0.021 0.021 ref. ECN: S20-0930-Rev. C, 07-Dec-2020 DWG: 6062 Revision: 07-Dec-2020 Document Number: 76384 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single 0.152 (3.860) 0.039 0.068 (0.990) (1.725) 0.010 (0.255) (2.390) 0.094 0.088 (2.235) 0.016 (0.405) 0.026 (0.660) 0.025 0.030 (0.635) (0.760) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72597 Revision: 21-Jan-08 www.vishay.com 7 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000