SiRC04DP
www.vishay.com
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET With Schottky Diode
FEATURES
PowerPAK® SO-8 Single
D
5
D
6
D
7
D
8
• TrenchFET® Gen IV power MOSFET
• SkyFET® with monolithic Schottky diode
• 100 % Rg and UIS tested
6.
15
m
m
1
5
5.1
mm
3
4 S
G
Bottom View
Top View
2
S
1
S
APPLICATIONS
D
• Synchronous buck
PRODUCT SUMMARY
VDS (V)
RDS(on) max. (Ω) at VGS = 10 V
RDS(on) max. (Ω) at VGS = 4.5 V
Qg typ. (nC)
ID (A) a, g
SCHOTTKY
VF (V) at 5 A
IF (A) a, g
Configuration
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
• Synchronous rectification
30
0.00245
0.00350
16.6
60
• DC/DC conversion
G
0.7
60
Single plus integrated Schottky
Schottky
Diode
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK SO-8 Single
SiRC04DP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C)
SYMBOL
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed drain current (t = 300 μs)
ID
IDM
Continuous source-drain diode current
TC = 25 °C
TA = 25 °C
IS
Single pulse avalanche current
Single pulse avalanche energy
L = 0.3 mH
IAS
EAS
Maximum power dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d, e
TJ, Tstg
LIMIT
30
+20, -16
60 g
60 g
33.6 b, c
26.9 b, c
100
60 g
7.1 b ,c
15
11.25
50
32
5 b, c
3.2 b, c
-55 to +150
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
t ≤ 10 s
RthJA
20
25
Maximum junction-to-ambient b,f
°C/W
1.9
2.5
Maximum junction-to-case (drain)
Steady state
RthJC
Notes
a. Based on TC = 25 °C
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection
e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 70 °C/W
g. Package limit
S21-0840-Rev. B, 09-Aug-2021
Document Number: 62954
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiRC04DP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
VDS
VGS = 0 V, ID = 250 μA
30
-
-
UNIT
Static
Drain-source breakdown voltage
VDSt
VGS = 0 V, ID(aval) = 15 A, ttranscient ≤ 50 ns
36
-
-
VGS(th)
VDS = VGS, ID = 250 μA
1
-
2.1
Gate-source leakage
IGSS
VDS = 0 V, VGS = +20, -16 V
-
-
± 100
Zero gate voltage drain current
IDSS
On-state drain current a
ID(on)
Drain-source breakdown voltage (transient)
c
Gate-source threshold voltage
Drain-source on-state resistance a
Forward transconductance a
RDS(on)
gfs
VDS = 30 V, VGS = 0 V
-
0.02
0.20
VDS = 30 V, VGS = 0 V, TJ = 55 °C
-
0.15
1
VDS ≥ 5 V, VGS = 10 V
30
-
-
VGS = 10 V, ID = 15 A
-
0.00205 0.00245
VGS = 4.5 V, ID = 10 A
-
0.00280 0.00350
VDS = 10 V, ID = 15 A
-
140
-
-
2850
-
-
1050
-
-
74
-
-
0.026
0.052
V
nA
mA
A
Ω
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
VDS = 15 V, VGS = 0 V, f = 1 MHz
Crss/Ciss ratio
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Output charge
Qoss
Rg
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDS = 15 V, VGS = 10 V, ID = 15 A
-
37
56
-
16.6
25
-
6.7
-
-
2.9
-
VDS = 15 V, VGS = 0 V
-
33
-
f = 1 MHz
0.4
1.2
2
-
12
24
-
17
34
VDS = 15 V, VGS = 4.5 V, ID = 15 A
td(on)
tr
td(off)
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
pF
nC
Ω
-
25
50
tf
-
8
16
td(on)
-
30
60
-
55
110
-
25
50
-
9
18
-
-
60
-
-
100
IS = 5 A
-
0.45
0.7
-
38
76
ns
IF = 10 A, di/dt = 100 A/μs,
TJ = 25 °C
-
31
62
nC
-
18
-
-
20
-
tr
td(off)
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
tf
ns
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulse diode forward current (t = 100 μs)
ISM
Body diode voltage
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
TC = 25 °C
A
V
ns
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
c. TCASE = 25 °C; Expected voltage stress during 100 % UIS test. Production data log is not available
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S21-0840-Rev. B, 09-Aug-2021
Document Number: 62954
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiRC04DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
100
VGS = 10 V thru 4 V
80
ID - Drain Current (A)
ID - Drain Current (A)
80
60
VGS = 3 V
40
TC = 25 °C
60
40
TC = 125 °C
20
20
TC = - 55 °C
VGS = 2 V
0
0.0
0.5
1.0
1.5
2.0
0
0.0
2.5
1.6
3.2
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
4.0
4500
0.0031
C - Capacitance (pF)
3600
0.0027
VGS = 4.5 V
0.0023
VGS = 10 V
0.0019
Ciss
2700
Coss
1800
900
Crss
0
0.0015
0
20
40
60
80
0
100
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
Capacitance
On-Resistance vs. Drain Current
1.8
10
RDS(on) - On-Resistance (Normalized)
ID = 10 A
VGS - Gate-to-Source Voltage (V)
2.4
VGS - Gate-to-Source Voltage (V)
0.0035
RDS(on) - On-Resistance (Ω)
0.8
8
VDS = 15 V
6
VDS = 10 V
VDS = 20 V
4
2
0
ID = 15 A
VGS = 10 V
1.6
1.4
1.2
VGS = 4.5 V
1.0
0.8
0.6
0
8
16
24
32
40
- 50
- 25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S21-0840-Rev. B, 09-Aug-2021
Document Number: 62954
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiRC04DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.010
IS - Source Current (A)
RDS(on) - On-Resistance (Ω)
TJ = 150 °C
10
TJ = 25 °C
1
0.1
0.01
ID = 15A
0.008
0.006
TJ = 125 °C
0.004
0.002
TJ = 25 °C
0.001
0.0
0.000
0.2
0.4
0.6
0.8
0
1.0
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
10-1
200
10-2
30 V
160
20 V
10-3
Power (W)
IR - Reverse Current (A)
2
10-4
120
80
10 V
10-5
40
10-6
0
25
50
75
100
125
0
0.001
150
0.01
TJ - Temperature (°C)
Threshold Voltage
0.1
Time (s)
1
10
Single Pulse Power, Junction-to-Ambient
1000
ID - Drain Current (A)
100
IDM Limited
100 μs
ID Limited
1 ms
10
10 ms
Limited by R DS(on)*
1
100 ms
1s
0.1
0.01
0.01
TC = 25 °C
Single Pulse
10 s
BVDSS Limited
DC
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area
S21-0840-Rev. B, 09-Aug-2021
Document Number: 62954
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiRC04DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
120
ID - Drain Current (A)
96
72
PACKAGE LIMITED
48
24
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
60
2.5
48
2.0
36
1.5
Power (W)
Power (W)
Current Derating a
24
1.0
0.5
12
0.0
0
0
25
50
75
100
TC - Case Temperature (°C)
Power, Junction-to-Case
125
150
0
25
50
75
100
TA - Ambient Temperature (°C)
125
150
Power, Junction-to-Ambient
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S21-0840-Rev. B, 09-Aug-2021
Document Number: 62954
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiRC04DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
t1
t2
1. Duty Cycle, D =
0.05
2. Per Unit Base = R thJA = 70 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
0.0001
t1
t2
0.001
4. Surface Mounted
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62954.
S21-0840-Rev. B, 09-Aug-2021
Document Number: 62954
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8, (Single/Dual)
L
H
E2
K
E4
θ
D4
W
1
M
1
Z
2
D5
D2
e
2
D1
D
2
D
3
4
θ
4
b
3
L1
E3
θ
A1
Backside View of Single Pad
H
K
E2
E4
L
1
D1
D5
2
D2
Detail Z
K1
2
E1
E
D3 (2x) D4
c
A
θ
3
4
Notes
1. Inch will govern.
2 Dimensions exclusive of mold gate burrs.
3. Dimensions exclusive of mold flash and cutting burrs.
DIM.
A
A1
b
c
D
D1
D2
D3
D4
D5
E
E1
E2
E3
E4
e
K
K1
H
L
L1
W
M
b
D2
E3
Backside View of Dual Pad
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
0.97
1.04
0.41
0.28
5.15
4.90
3.76
1.50
0.57 typ.
3.98 typ.
6.15
5.89
3.66
3.78
0.75 typ.
1.27 BSC
1.27 typ.
0.61
0.61
0.13
0.25
0.125 typ.
1.12
0.05
0.51
0.33
5.26
5.00
3.91
1.68
0.038
0
0.013
0.009
0.199
0.189
0.140
0.052
0.044
0.002
0.020
0.013
0.207
0.197
0.154
0.066
6.25
5.99
3.84
3.91
0.238
0.228
0.137
0.145
0.71
0.71
0.20
12°
0.36
0.022
0.020
0.020
0.002
0°
0.006
0.041
0.016
0.011
0.203
0.193
0.148
0.059
0.0225 typ.
0.157 typ.
0.242
0.232
0.144
0.149
0.030 typ.
0.050 BSC
0.050 typ.
0.024
0.024
0.005
0.010
0.005 typ.
0.33
0.23
5.05
4.80
3.56
1.32
6.05
5.79
3.48
3.68
0.56
0.51
0.51
0.06
0°
0.15
0.246
0.236
0.151
0.154
0.028
0.028
0.008
12°
0.014
ECN: S17-0173-Rev. L, 13-Feb-17
DWG: 5881
Revison: 13-Feb-17
1
Document Number: 71655
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single
0.260
(6.61)
0.150
(3.81)
0.050
0.174
(4.42)
0.154
(1.27)
0.026
(0.66)
(3.91)
0.024
(0.61)
0.050
0.032
0.040
(1.27)
(0.82)
(1.02)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72599
Revision: 21-Jan-08
www.vishay.com
15
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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Revision: 09-Jul-2021
1
Document Number: 91000
