SiRC10DP
www.vishay.com
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET With Schottky Diode
FEATURES
PowerPAK® SO-8 Single
D
5
D
6
D
7
• TrenchFET® Gen IV power MOSFET
D
8
• SKYFET® with monolithic Schottky diode
• 100 % Rg and UIS tested
6.
15
m
m
1
5
5.1
mm
Top View
3
4 S
G
Bottom View
2
S
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
1
S
APPLICATIONS
• Synchronous buck
• Synchronous rectification
PRODUCT SUMMARY
VDS (V)
RDS(on) max. (Ω) at VGS = 10 V
RDS(on) max. (Ω) at VGS = 4.5 V
Qg typ. (nC)
ID (A)
Configuration
D
• DC/DC conversion
G
30
0.0035
0.0052
11.2
60 a, g
Single
Schottky
Diode
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK SO-8 Single
SiRC10DP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed drain current (t = 100 μs)
SYMBOL
LIMIT
VDS
VGS
30
+20 / -16
60 a
60 a
23.9 b, c
19.1 b, c
150
30
3.2 b, c
15
11.25
43
27.5
3.6, c
2.3 b, c
-55 to +150
260
ID
IDM
Continuous source-drain diode current
TC = 25 °C
TA = 25 °C
IS
Single pulse avalanche current
Single pulse avalanche energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
TC = 70 °C
Maximum power dissipation
TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature) c
PD
TJ, Tstg
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
Maximum junction-to-ambient b
t ≤ 10 s
RthJA
24
34
°C/W
2.3
2.9
Maximum junction-to-case (drain)
Steady state
RthJC
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
g. TC = 25 °C.
S21-0840-Rev. B, 09-Aug-2021
Document Number: 75189
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiRC10DP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
VDS
VGS = 0 V, ID = 250 μA
30
-
-
Drain-source breakdown voltage (transient) c
VDSt
VGS = 0 V, ID(aval) = 15 A, ttransient = 50 ns
36
-
-
Gate-source threshold voltage
V
VGS(th)
VDS = VGS, ID =250 μA
1
-
2.4
V
Gate-source leakage
IGSS
VDS = 0 V, VGS = +20 / -16 V
-
-
100
nA
Zero gate voltage drain current
IDSS
On-state drain current a
ID(on)
Drain-source on-state resistance a
Forward transconductance a
VDS = 30 V, VGS = 0 V
-
-
0.20
VDS = 30 V, VGS = 0 V, TJ = 70 °C
-
-
2
VDS ≥ 10 V, VGS = 10 V
30
-
-
VGS = 10 V, ID = 10 A
-
0.0029
0.0035
VGS = 4.5 V, ID = 10 A
-
0.0041
0.0052
VDS = 15 V, ID = 10 A
-
85
-
-
1873
-
VDS = 15 V, VGS = 0 V, f = 1 MHz
-
760
-
-
52
-
-
24
36
-
11.2
17
VDS = 15 V, VGS = 4.5 V, ID = 10 A
-
4.6
-
-
2
-
f = 1 MHz
0.3
1.0
1.8
-
10
20
-
30
60
-
15
30
tf
-
9
18
td(on)
-
18
36
-
52
104
-
12
24
-
15
30
RDS(on)
gfs
mA
A
Ω
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Gate resistance
Rg
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDS = 15 V, VGS = 10 V, ID = 10 A
td(on)
tr
td(off)
tr
td(off)
VDD = 15 V, RL = 1.5 Ω, ID ≅ 10 A,
VGEN = 10 V, Rg = 1 Ω
VDD = 15 V, RL = 1.5 Ω, ID ≅ 10 A,
VGEN = 4.5 V, Rg = 1 Ω
tf
pF
nC
Ω
ns
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulse diode forward current
ISM
Body diode voltage
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
TC = 25 °C
IS = 5 A, VGS = 0 V
IF = 10 A, dI/dt = 100 A/μs,
TJ = 25 °C
-
-
30
-
-
150
-
0.51
0.75
V
-
35
70
ns
-
27
54
nC
-
15
-
-
20
-
A
ns
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. TCASE = 25 °C. Expected voltage stress during 100 % UIS test. Production datalog is not available.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S21-0840-Rev. B, 09-Aug-2021
Document Number: 75189
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiRC10DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
100
100
10000
10000
VGS = 10 V thru 4 V
40
100
VGS = 3 V
20
1000
60
1st line
2nd line
1000
60
2nd line
ID - Drain Current (A)
80
1st line
2nd line
2nd line
ID - Drain Current (A)
80
40
100
TC = 25 °C
20
TC = -55 °C
TC = 125 °C
VGS = 2 V
0
0
10
0
0.5
1
1.5
2
2.5
10
0
1
2
4
VDS - Drain-to-Source Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
3000
10000
VGS = 4.5 V
1st line
2nd line
VGS = 10 V
100
0.0028
Ciss
1000
1800
1st line
2nd line
1000
0.0044
0.0036
10000
2400
2nd line
C - Capacitance (pF)
0.0052
5
Axis Title
Axis Title
0.0060
2nd line
RDS(on) - On-Resistance (Ω)
3
Coss
1200
100
600
Crss
0.0020
0
10
20
40
60
80
10
0
100
5
10
20
ID - Drain Current (A)
2nd line
VDS - Drain-to-Source Voltage (V)
2nd line
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.6
ID = 10 A
8
1000
1st line
2nd line
6
VDS = 10 V, 15 V, 20 V
4
100
2
0
10
5
10
15
20
25
2nd line
RDS(on) - On-Resistance (Normalized)
10000
0
25
Axis Title
Axis Title
10
2nd line
VGS - Gate-to-Source Voltage (V)
15
10000
ID = 10 A
1.4
VGS = 10 V
1000
1.2
VGS = 4.5 V
1.0
100
0.8
0.6
10
-50
-25
0
25
50
75
100 125 150
Qg - Total Gate Charge (nC)
2nd line
TJ - Junction Temperature (°C)
2nd line
Gate Charge
On-Resistance vs. Junction Temperature
S21-0840-Rev. B, 09-Aug-2021
1st line
2nd line
0
Document Number: 75189
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiRC10DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
100
TJ = 150 °C
10000
0.2
1st line
2nd line
0.1
100
0.01
1000
-0.1
ID = 5 mA
1st line
2nd line
1000
TJ = 25 °C
1
2nd line
VGS(th) - Variance (V)
10
2nd line
IS - Source Current (A)
0.5
10000
-0.4
100
ID = 250 μA
-0.7
0.001
-1.0
10
0
0.2
0.4
0.6
0.8
1.0
10
-50
-25
0
25
50
75
100 125 150
VSD - Source-to-Drain Voltage (V)
2nd line
TJ - Temperature (°C)
2nd line
Source-Drain Diode Forward Voltage
Threshold Voltage
Axis Title
Axis Title
0.015
200
10000
10000
160
1000
120
1st line
2nd line
TJ = 125 °C
0.006
2nd line
Power (W)
1000
0.009
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
ID = 10 A
0.012
80
100
100
0.003
40
TJ = 25 °C
0
0
0.001
10
0
2
4
6
8
10
10
0.01
0.1
1
10
VGS - Gate-to-Source Voltage (V)
2nd line
Time (s)
2nd line
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
Axis Title
1000
10000
0.01
10000
VDS = 30 V
VDS = 10 V, 20 V
0.0001
100
0.00001
100 μs
ID limited
1000
10
1 ms
Limited by RDS(on) (1)
1
10 ms
100 ms100
1s
10 s
DC
0.1
Ta = 25 °C
Single pulse
0.000001
10
0
25
50
75
100
125
150
VGS - Gate-to-Source Voltage (V)
2nd line
Gate Current vs. Gate-to-Source Voltage
S21-0840-Rev. B, 09-Aug-2021
0.01
0.01
(1)
0.1
1st line
2nd line
1000
2nd line
ID - Drain Current (A)
100
0.001
1st line
2nd line
2nd line
IGSS - Gate Current (mA)
IDM limited
BVDSS limited
1
10
10
100
VDS - Drain-to-Source Voltage (V)
VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 75189
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiRC10DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
100
10000
1000
60
1st line
2nd line
2nd line
ID - Drain Current (A)
80
Package Limited
40
100
20
0
10
0
25
50
75
100
125
150
TC - Case Temperature (°C)
2nd line
Current Derating a
Axis Title
Axis Title
55
10000
2.5
44
10000
2.0
1.5
1st line
2nd line
22
2nd line
Power (W)
1000
1st line
2nd line
2nd line
Power (W)
1000
33
1.0
100
11
100
0.5
0
10
0
25
50
75
100
125
150
0
10
0
25
50
75
100
125
TC - Case Temperature (°C)
2nd line
TA - Ambient Temperature (°C)
2nd line
Power, Junction-to-Case
Power, Junction-to-Ambient
150
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S21-0840-Rev. B, 09-Aug-2021
Document Number: 75189
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiRC10DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
10000
Duty Cycle = 0.5
Notes:
0.2
1000
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
1
PDM
0.1
0.1
t1
t2
t
1. Duty cycle, D = t1
2
2. Per unit base = RthJA = 70 °C/W
0.05
0.02
3. TJM - TA = PDMZthJA
Single pulse
100
(t)
4. Surface mounted
0.01
0.0001
0.001
0.01
0.1
1
10
100
10
1000
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
10000
Duty Cycle = 0.5
0.2
1000
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
1
0.1
0.1
0.05
100
0.02
Single pulse
0.01
0.0001
10
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?75189.
S21-0840-Rev. B, 09-Aug-2021
Document Number: 75189
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8, (Single/Dual)
L
H
E2
K
E4
θ
D4
W
1
M
1
Z
2
D5
D2
e
2
D1
D
2
D
3
4
θ
4
b
3
L1
E3
θ
A1
Backside View of Single Pad
H
K
E2
E4
L
1
D1
D5
2
D2
Detail Z
K1
2
E1
E
D3 (2x) D4
c
A
θ
3
4
Notes
1. Inch will govern.
2 Dimensions exclusive of mold gate burrs.
3. Dimensions exclusive of mold flash and cutting burrs.
DIM.
A
A1
b
c
D
D1
D2
D3
D4
D5
E
E1
E2
E3
E4
e
K
K1
H
L
L1
W
M
b
D2
E3
Backside View of Dual Pad
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
0.97
1.04
0.41
0.28
5.15
4.90
3.76
1.50
0.57 typ.
3.98 typ.
6.15
5.89
3.66
3.78
0.75 typ.
1.27 BSC
1.27 typ.
0.61
0.61
0.13
0.25
0.125 typ.
1.12
0.05
0.51
0.33
5.26
5.00
3.91
1.68
0.038
0
0.013
0.009
0.199
0.189
0.140
0.052
0.044
0.002
0.020
0.013
0.207
0.197
0.154
0.066
6.25
5.99
3.84
3.91
0.238
0.228
0.137
0.145
0.71
0.71
0.20
12°
0.36
0.022
0.020
0.020
0.002
0°
0.006
0.041
0.016
0.011
0.203
0.193
0.148
0.059
0.0225 typ.
0.157 typ.
0.242
0.232
0.144
0.149
0.030 typ.
0.050 BSC
0.050 typ.
0.024
0.024
0.005
0.010
0.005 typ.
0.33
0.23
5.05
4.80
3.56
1.32
6.05
5.79
3.48
3.68
0.56
0.51
0.51
0.06
0°
0.15
0.246
0.236
0.151
0.154
0.028
0.028
0.008
12°
0.014
ECN: S17-0173-Rev. L, 13-Feb-17
DWG: 5881
Revison: 13-Feb-17
1
Document Number: 71655
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single
0.260
(6.61)
0.150
(3.81)
0.050
0.174
(4.42)
0.154
(1.27)
0.026
(0.66)
(3.91)
0.024
(0.61)
0.050
0.032
0.040
(1.27)
(0.82)
(1.02)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72599
Revision: 21-Jan-08
www.vishay.com
15
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www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 09-Jul-2021
1
Document Number: 91000
