SIRC16DP-T1-RE3

SiRC16DP www.vishay.com Vishay Siliconix N-Channel 25 V (D-S) MOSFET with Schottky Diode FEATURES PowerPAK® SO-8 Single D 5 D 6 D 7 • TrenchFET® Gen IV power MOSFET D 8 • SKYFET® with monolithic Schottky diode • Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency for high-frequency switching • 100 % Rg and UIS tested 6. 15 m m m 1 3 4 S G Bottom View 5m 5.1 Top View 2 S 1 S • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Synchronous buck D • Synchronous rectification PRODUCT SUMMARY • DC/DC conversion MOSFET VDS (V) 25 RDS(on) max. () at VGS = 10 V 0.00096 RDS(on) max. () at VGS = 4.5 V 0.00140 Qg typ. (nC) Schottky diode G 31.5 ID (A) a, g 60 SCHOTTKY VF (V) at 10 A IF (A) a, g Configuration S 0.55 N-channel MOSFET 60 Single plus integrated Schottky ORDERING INFORMATION Package PowerPAK SO-8 Lead (Pb)-free and halogen-free SiRC16DP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 25 Gate-source voltage VGS +20, -16 Continuous drain current (TJ = 150 °C) TC = 25 °C 60 a TC = 70 °C 60 a TA = 25 °C ID Pulsed drain current (t = 100 μs) Continuous source current (MOSFET diode conduction) Single pulse avalanche current Single pulse avalanche energy IDM TC = 25 °C TA = 25 °C L = 0.1 mH IS IAS EAS TC = 25 °C Maximum power dissipation TC = 70 °C TA = 25 °C Operating junction and storage temperature range S17-0667-Rev. C, 08-May-17 250 A 60 a 5 a, b 30 45 mJ 54.3 PD 34.7 5 b, c W 3.2 b, c TA = 70 °C Soldering recommendations (peak temperature) V 57 b, c 45 b, c TA = 70 °C UNIT TJ, Tstg -55 to +150 260 °C Document Number: 77722 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiRC16DP www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM Maximum junction-to-ambient b, f t  10 s RthJA 20 25 Maximum junction-to-case (drain) Steady state RthJC 1.8 2.3 UNIT °C/W Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 65 °C/W g. TC = 25 °C SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current Forward transconductance a Dynamic b Input capacitance Output capacitance Reverse transfer capacitance Crss/Ciss ratio Total gate charge TEST CONDITIONS MIN. TYP. MAX. VDS VGS(th) IGSS VGS = 0 V, ID = 250 μA VDS = VGS, ID = 250 μA VDS = 0 V, VGS = +20 V, -16 V VDS = 25 V, VGS = 0 V VDS = 25 V, VGS = 0 V, TJ = 70 °C VDS  5 V, VGS = 10 V VGS = 10 V, ID = 15 A VGS = 4.5 V, ID = 10 A VDS = 10 V, ID = 15 A 25 1 40 - 0.06 1 0.00080 0.00110 67 2.4 ± 100 0.10 10 0.00096 0.00140 - 0.1 - 5150 1950 350 0.068 69 31.5 12.1 5.6 0.5 13 21 35 9 26 36 31 12 0.140 105 48 0.9 26 42 70 18 52 72 62 24 - 0.41 46 47 21 25 60 100 0.55 92 94 - IDSS On-state drain current a Drain-source on-state resistance SYMBOL ID(on) a RDS(on) gfs Ciss Coss Crss Qg VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 10 V, ID = 10 A Gate-source charge Qgs VDS = 10 V, VGS = 4.5 V, ID = 10 A Gate-drain charge Qgd Gate resistance Rg f = 1 MHz Turn-on delay time td(on) Rise time tr VDD = 10 V, RL = 1 , ID  10 A, VGEN = 10 V, Rg = 1  Turn-off delay time td(off) Fall time tf Turn-on delay time td(on) Rise time tr VDD = 10 V, RL = 1 , ID  10 A, VGEN = 4.5 V, Rg = 1  Turn-off delay time td(off) Fall time tf Drain-source Body Diode Characteristics TC = 25°C Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD IS = 5 A, VGS = 0 V Body diode reverse recovery time trr Body diode reverse recovery charge Qrr IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C Reverse recovery fall time ta Reverse recovery rise time tb Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing UNIT V nA mA A  S pF nC  ns A V ns nC ns Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-0667-Rev. C, 08-May-17 Document Number: 77722 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiRC16DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 150 150 10000 10000 VGS = 10 V thru 4 V VGS = 3 V 60 100 30 1000 90 TC = 25 °C 60 100 30 TC = 125 °C TC = -55 °C VGS = 2 V 0 0 10 0 0.5 1 1.5 2 2.5 10 0 1 2 4 VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics 5 Axis Title Axis Title 7000 5600 VGS = 4.5 V 1000 0.0012 0.0008 100 VGS = 10 V 2nd line C - Capacitance (pF) 0.0016 10000 0.0004 Ciss 1000 4200 1st line 2nd line 10000 1st line 2nd line Coss 2800 100 1400 Crss 0 0 10 0 20 40 60 80 10 0 100 5 10 15 20 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current and Gate Capacitance Axis Title Axis Title 10 1.6 ID = 10 A 8 1000 VDS = 10 V 1st line 2nd line 6 VDS = 12.5 V VDS = 7.5 V 4 100 2 0 10 14 28 42 56 70 2nd line RDS(on) - On-Resistance (Normalized) 10000 0 25 10000 ID = 15 A VGS = 10 V 1.4 1000 1.2 VGS = 4.5 V 1.0 100 0.8 0.6 10 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature S17-0667-Rev. C, 08-May-17 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 3 VDS - Drain-to-Source Voltage (V) 2nd line 0.0020 2nd line VGS - Gate-to-Source Voltage (V) 1st line 2nd line 1000 90 2nd line ID - Drain Current (A) 120 1st line 2nd line 2nd line ID - Drain Current (A) 120 Document Number: 77722 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiRC16DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 0.005 10000 10000 ID = 15 A 0.1 100 0.01 0.001 0.004 1000 0.003 0.002 0.2 0.4 0.6 0.8 TJ = 25 °C 0.001 0 10 0 1.0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 0.1 500 10000 0.01 10000 400 300 1st line 2nd line VDS = 10 V, 20 V 0.0001 1000 2nd line Power (W) 1000 VDS = 25 V 0.001 1st line 2nd line 2nd line IR - Reverse Current (A) 100 TJ = 125 °C 10 0 1st line 2nd line 1st line 2nd line 2nd line IS - Source Current (A) 1000 TJ = 25 °C 1 2nd line RDS(on) - On-Resistance (Ω) TJ = 150 °C 10 200 100 100 0.00001 100 0.000001 0 0.001 10 0 25 50 75 100 125 150 10 0.01 0.1 1 TJ - Temperature (C) 2nd line Time (s) 2nd line Reverse Current vs. Junction Temperature Single Pulse Power 10 Axis Title 1000 10000 IDM limited ID limited 100 μs 1 ms 1000 10 1st line 2nd line 2nd line ID - Drain Current (A) 100 10 ms Limited by RDS(on) (1) 1 100 ms 100 1s 10 s 0.1 DC TA = 25 °C Single pulse 0.01 0.01 (1) 0.1 BVDSS limited 1 10 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S17-0667-Rev. C, 08-May-17 Document Number: 77722 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiRC16DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 220 10000 1000 132 1st line 2nd line 2nd line ID - Drain Current (A) 176 88 Package limited 100 44 0 10 0 25 50 75 100 125 150 TC - Case Temperature (°C) 2nd line Current Derating a Axis Title Axis Title 70 10000 2.5 56 10000 2.0 1.5 1st line 2nd line 28 2nd line Power (W) 1000 1st line 2nd line 2nd line Power (W) 1000 42 1.0 100 14 100 0.5 0 10 0 25 50 75 100 125 150 0 10 0 25 50 75 100 125 TC - Case Temperature (°C) 2nd line TA - Ambient Temperature (°C) 2nd line Power, Junction-to-Case Power, Junction-to-Ambient 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S17-0667-Rev. C, 08-May-17 Document Number: 77722 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiRC16DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 1 0.2 Notes: 0.1 PDM 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.1 t1 0.05 t2 t 1. Duty cycle, D = t1 2 2. Per unit base = RthJA = 65 °C/W 0.02 3. TJM - TA = PDMZthJA Single pulse 0.01 0.0001 0.001 0.01 100 (t) 4. Surface mounted 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 10000 1 0.2 1000 0.1 0.1 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.05 0.02 100 Single pulse 0.01 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77722. S17-0667-Rev. C, 08-May-17 Document Number: 77722 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8, (Single/Dual) L H E2 K E4 θ D4 W 1 M 1 Z 2 D5 D2 e 2 D1 D 2 D 3 4 θ 4 b 3 L1 E3 θ A1 Backside View of Single Pad H K E2 E4 L 1 D1 D5 2 D2 Detail Z K1 2 E1 E D3 (2x) D4 c A θ 3 4 Notes 1. Inch will govern. 2 Dimensions exclusive of mold gate burrs. 3. Dimensions exclusive of mold flash and cutting burrs. DIM. A A1 b c D D1 D2 D3 D4 D5 E E1 E2 E3 E4 e K K1 H L L1  W M b D2 E3 Backside View of Dual Pad MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. 0.97 1.04 0.41 0.28 5.15 4.90 3.76 1.50 0.57 typ. 3.98 typ. 6.15 5.89 3.66 3.78 0.75 typ. 1.27 BSC 1.27 typ. 0.61 0.61 0.13 0.25 0.125 typ. 1.12 0.05 0.51 0.33 5.26 5.00 3.91 1.68 0.038 0 0.013 0.009 0.199 0.189 0.140 0.052 0.044 0.002 0.020 0.013 0.207 0.197 0.154 0.066 6.25 5.99 3.84 3.91 0.238 0.228 0.137 0.145 0.71 0.71 0.20 12° 0.36 0.022 0.020 0.020 0.002 0° 0.006 0.041 0.016 0.011 0.203 0.193 0.148 0.059 0.0225 typ. 0.157 typ. 0.242 0.232 0.144 0.149 0.030 typ. 0.050 BSC 0.050 typ. 0.024 0.024 0.005 0.010 0.005 typ. 0.33 0.23 5.05 4.80 3.56 1.32 6.05 5.79 3.48 3.68 0.56 0.51 0.51 0.06 0° 0.15 0.246 0.236 0.151 0.154 0.028 0.028 0.008 12° 0.014 ECN: S17-0173-Rev. L, 13-Feb-17 DWG: 5881 Revison: 13-Feb-17 1 Document Number: 71655 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single 0.260 (6.61) 0.150 (3.81) 0.050 0.174 (4.42) 0.154 (1.27) 0.026 (0.66) (3.91) 0.024 (0.61) 0.050 0.032 0.040 (1.27) (0.82) (1.02) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72599 Revision: 21-Jan-08 www.vishay.com 15 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000