SIS110DN-T1-GE3

SiS110DN www.vishay.com Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PowerPAK® 1212-8 Single • TrenchFET® Gen IV power MOSFET D D 8 D 7 D 6 5 3. 3 m m 1 3.3 mm Top View • Tuned for the lowest RDS - Qoss FOM • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 2 S 3 S 4 S G Bottom View APPLICATIONS • Primary side switch PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 7.5 V Qg typ. (nC) ID (A) Configuration D • DC/DC converter 100 0.054 0.070 6.5 14.2 g Single • Motor drive switch G • Boost converter • LED backlighting S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK 1212-8 SiS110DN-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) ID IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e PD TJ, Tstg LIMIT 100 ± 20 14.2 11.4 5.2 b, c 4.2 b, c 20 16 a 2.6 b, c 10 5 24 15 3.2 b, c 2.1 b, c -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum junction-to-ambient b, f t  10 s RthJA 31 39 °C/W Maximum junction-to-case (drain) Steady state RthJC 4.2 5.2 Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 81 °C/W g. TC = 25 °C S18-0018-Rev. A, 15-Jan-18 Document Number: 75888 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS110DN www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT V Static Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 100 - - VDS/TJ ID = 10 mA - 57 - VGS(th) temperature coefficient VGS(th)/TJ ID = 250 μA - -7.2 - Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 2 - 4 V IGSS VDS = 0 V, VGS = ± 20 V - - 100 nA VDS = 100 V, VGS = 0 V - - 1 VDS = 100 V, VGS = 0 V, TJ = 70 °C - - 10 VDS  10 V, VGS = 10 V 10 - - A VGS = 10 V, ID = 4 A - 0.045 0.054 VGS = 7.5 V, ID = 4 A - 0.050 0.070  VDS = 15 V, ID = 10 A - 25 - - 550 - - 50 - - 7 - - 8.5 13 - 6.5 10 VDS temperature coefficient Gate-source leakage Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs mV/°C μA S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Output charge Qoss Rg Gate resistance Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = 50 V, VGS = 0 V, f = 1 MHz VDS = 50 V, VGS = 10 V, ID = 4 A VDS = 50 V, VGS = 7.5 V, ID = 4 A - 2.5 - - 1.5 - VDS = 50 V, VGS = 0 V - 8 - f = 1 MHz 0.3 1.3 2.6 - 10 20 - 5 10 - 14 30 tf - 5 10 td(on) - 11 20 - 5 10 - 14 30 - 5 10 td(on) tr td(off) tr td(off) VDD = 50 V, RL = 12.5 , ID  4 A, VGEN = 10 V, Rg = 1  VDD = 50 V, RL = 12.5 , ID  4 A, VGEN = 7.5 V, Rg = 1  tf pF nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = 4 A, VGS = 0 V IF = 4 A, di/dt = 100 A/μs, TJ = 25 °C - - 16 - - 20 - 0.85 1.2 V - 50 100 ns - 53 110 nC - 27 - - 23 - A ns Notes a. Pulse test: pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing   Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S18-0018-Rev. A, 15-Jan-18 Document Number: 75888 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS110DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 20 10000 20 10000 10 100 5 1000 12 TC = 25 °C 8 100 4 TC = 125 °C VGS = 4 V TC = -55 °C 0 10 0.5 1 1.5 2 2.5 0 10 0 3 1 2 3 VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics 700 10000 10000 1st line 2nd line 1000 VGS = 7.5 V 0.05 100 VGS = 10 V Ciss 500 1000 1st line 2nd line 0.06 2nd line C - Capacitance (pF) 600 0.04 400 300 100 200 Crss 100 0.03 10 4 8 12 16 Coss 0 20 10 0 20 40 60 80 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current and Gate Voltage Capacitance Axis Title 8 VDS = 50 V VDS = 75 V 1000 1st line 2nd line VDS = 25 V 4 100 2 0 10 4 6 8 10 2nd line RDS(on) - On-Resistance (Normalized) ID = 4 A 6 10000 2.2 10000 2 100 Axis Title 10 0 6 Axis Title Axis Title 2nd line RDS(on) - On-Resistance (Ω) 5 VDS - Drain-to-Source Voltage (V) 2nd line 0.07 0 4 ID = 4 A 2.0 VGS = 7.5 V 1.8 1000 1.6 VGS = 10 V 1.4 1.2 1.0 100 0.8 0.6 0.4 10 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature S18-0018-Rev. A, 15-Jan-18 1st line 2nd line 0 2nd line VGS - Gate-to-Source Voltage (V) 1st line 2nd line 1000 VGS = 5 V 2nd line ID - Drain Current (A) 16 15 1st line 2nd line 2nd line ID - Drain Current (A) VGS = 10 V thru 6 V Document Number: 75888 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS110DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 3.4 10000 3.2 TJ = 150 °C 3.0 1000 VGS(th) (V) TJ = 25 °C 1 1000 2.8 ID = 250μA 1st line 2nd line 10 1st line 2nd line 2nd line IS - Source Current (A) 10000 2.6 2.4 100 100 2.2 2.0 0.1 10 0 0.2 0.4 0.6 0.8 1.0 1.8 10 -50 1.2 -25 0 25 50 75 100 125 150 VSD - Source-to-Drain Voltage (V) 2nd line TJ - Temperature (°C) 2nd line Source-Drain Diode Forward Voltage Threshold Voltage Axis Title Axis Title 0.2 50 10000 10000 40 0.15 1000 30 1st line 2nd line TJ = 125 °C 0.1 2nd line Power (W) 1000 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) ID = 4 A 20 100 100 0.05 10 TJ = 25 °C 0 10 0 2 4 6 8 0 0.001 10 0.01 0.1 1 10 100 10 1000 VGS - Gate-to-Source Voltage (V) 2nd line Time (s) 2nd line On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient Axis Title 100 Limited by RDS(on) (1) IDM Limited 10000 10 1000 100 μs 1 1st line 2nd line 2nd line ID - Drain Current (A) ID(ON) Limited 1 ms 10 ms 100 100 ms 0.1 TA = 25 °C Single pulse BVdss Limited 0.01 0.1 (1) 1 10 1s 10 s DC 100 10 1000 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S18-0018-Rev. A, 15-Jan-18 Document Number: 75888 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS110DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 16 10000 10000 30 100 1st line 2nd line 2nd line Power (W) 8 1000 20 1000 1st line 2nd line 2nd line ID - Drain Current (A) 25 12 15 100 10 4 5 0 10 0 25 50 75 100 125 150 0 10 0 25 50 75 100 125 TC - Case Temperature (°C) 2nd line TC - Case Temperature (°C) 2nd line Current Derating a Power, Junction-to-Case 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S18-0018-Rev. A, 15-Jan-18 Document Number: 75888 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS110DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 1 10000 0.2 Notes: 0.1 PDM 0.1 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 t1 0.05 t2 t 1. Duty cycle, D = t1 2 2. Per unit base = RthJA = 81 °C/W 3. TJM - TA = PDMZthJA 0.02 0.001 (t) 4. Surface mounted Single pulse 0.01 0.0001 100 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 10000 0.2 1000 0.1 0.1 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.05 0.02 100 Single pulse 0.01 0.0001 10 0.001 0.01 0.1 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case                     Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75888. S18-0018-Rev. A, 15-Jan-18 Document Number: 75888 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix D4 PowerPAK® 1212-8, (Single / Dual) W H E2 E4 L K M θ e 1 Z D5 D D2 2 2 D1 8 1 5 4 θ 4 b 3 L1 E3 A1 Backside view of single pad H 2 E1 E Detail Z L K E2 E4 D2 D3(2x) D4 c A H 1 D1 2 K1 Notes 1. Inch will govern 2 Dimensions exclusive of mold gate burrs 3. Dimensions exclusive of mold flash and cutting burrs D2 3 4 b θ D5 θ E3 Backside view of dual pad DIM. MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.97 1.04 1.12 0.038 0.041 0.044 A1 0.00 - 0.05 0.000 - 0.002 b 0.23 0.30 0.41 0.009 0.012 0.016 c 0.23 0.28 0.33 0.009 0.011 0.013 D 3.20 3.30 3.40 0.126 0.130 0.134 D1 2.95 3.05 3.15 0.116 0.120 0.124 D2 1.98 2.11 2.24 0.078 0.083 0.088 D3 0.48 - 0.89 0.019 - 0.035 D4 0.47 typ. D5 2.3 typ. 0.0185 typ 0.090 typ E 3.20 3.30 3.40 0.126 0.130 0.134 E1 2.95 3.05 3.15 0.116 0.120 0.124 E2 1.47 1.60 1.73 0.058 0.063 0.068 E3 1.75 1.85 1.98 0.069 0.073 0.078 E4 0.034 typ. 0.013 typ. e 0.65 BSC 0.026 BSC K 0.86 typ. K1 0.35 - 0.034 typ. - 0.014 - - H 0.30 0.41 0.51 0.012 0.016 0.020 L 0.30 0.43 0.56 0.012 0.017 0.022 L1 0.06 0.13 0.20 0.002 0.005 0.008  0° - 12° 0° - 12° W 0.15 0.25 0.36 0.006 0.010 0.014 M 0.125 typ. 0.005 typ. ECN: S16-2667-Rev. M, 09-Jan-17 DWG: 5882 Revison: 09-Jan-17 Document Number: 71656 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single 0.152 (3.860) 0.039 0.068 (0.990) (1.725) 0.010 (0.255) (2.390) 0.094 0.088 (2.235) 0.016 (0.405) 0.026 (0.660) 0.025 0.030 (0.635) (0.760) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72597 Revision: 21-Jan-08 www.vishay.com 7 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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