SiS407ADN
www.vishay.com
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω) MAX.
ID (A) f, g
0.009 at VGS = -4.5 V
-18
0.0122 at VGS = -2.5 V
-18
0.0190 at VGS = -1.8 V
-18
VDS (V)
-20
• TrenchFET® power MOSFET
Qg (TYP.)
• Low thermal resistance PowerPAK® package
• 100 % Rg and UIS tested
63 nC
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
PowerPAK® 1212-8 Single
D
D 8
D 7
D 6
5
APPLICATIONS
S
• Load switch
• Battery switch
G
• Power management
3.
3
m
m
1
3.3
mm
Top View
1
2 S
3 S
4 S
G
Bottom View
D
Ordering Information:
SiS407ADN-T1-GE3 (lead (Pb)-free and halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
-20
Gate-Source Voltage
VGS
±8
TC = 70 °C
-18 f
ID
TA = 25 °C
-16.7 a, b
-13.4 a, b
TA = 70 °C
Pulsed Drain Current (t = 300 μs)
Continuous Source-Drain Diode Current
Avalanche Current
IDM
TC = 25 °C
-70
L = 0.1 mH
A
-18 f
IS
TA = 25 °C
-3.1 a, b
IAS
Single Pulse Avalanche Energy
-20
EAS
20
TC = 25 °C
Maximum Power Dissipation
V
-18 f
TC = 25 °C
Continuous Drain Current (TJ = 150 °C) a
UNIT
mJ
39.1
TC = 70 °C
25
PD
TA = 25 °C
3.7 a, b
W
2.4 a, b
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
Soldering Recommendations (Peak Temperature) c, d
260
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
Maximum Junction-to-Ambient a, e
t ≤ 10 s
RthJA
26
34
Maximum Junction-to-Case (Drain)
Steady State
RthJC
2.4
3.2
UNIT
°C/W
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under steady state conditions is 81 °C/W.
f. Package limited.
g. TC = 25 °C.
S14-0911-Rev. A, 28-Apr-14
Document Number: 63239
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiS407ADN
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = -250 μA
-20
-
-
-
V
-11
-
-
2.9
-
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = -250 μA
mV/°C
VGS(th)
VDS = VGS, ID = -250 μA
-0.4
-
-1
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current a
ID(on)
Drain-Source On-State Resistance a
Forward Transconductance a
VDS = -20 V, VGS = 0 V
-
-
-1
VDS = -20 V, VGS = 0 V, TJ = 55 °C
-
-
-10
VDS ≤ -5 V, VGS = -10 V
-40
-
-
VGS = -4.5 V, ID = -15 A
-
0.0073
0.009
VGS = -2.5 V, ID = -13 A
-
0.0100
0.0122
VGS = -1.8 V, ID= -5 A
-
0.0145
0.0190
VDS = -10 V, ID = -15 A
-
70
-
-
5875
-
VDS = -10 V, VGS= 0 V, f = 1 MHz
-
540
-
-
555
-
-
112
168
-
63
95
VDS = -10 V, VGS = -4.5 V, ID = -16.7 A
-
8.7
-
-
25.3
-
f = 1 MHz
0.8
3.6
7.2
-
12
24
RDS(on)
gfs
μA
A
Ω
S
Dynamic b
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VDS = -10 V, VGS = -8 V, ID = -16.7 A
td(on)
VDD = -10 V, RL = 1 Ω
ID ≅ -10 A, VGEN = -8 V, Rg = 1 Ω
tr
td(off)
tf
-
4
8
-
120
180
-
36
54
pF
nC
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current a
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
IS = -10 A
IF = -10 A, dI/dt = 100 A/μs, TJ = 25 °C
-
-
-18
-
-
-70
-
-0.75
-1.2
V
-
45
68
ns
-
38
57
nC
-
18
-
-
27
-
A
ns
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S14-0911-Rev. A, 28-Apr-14
Document Number: 63239
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiS407ADN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted)
70
5
VGS = 5 V thru 2.5 V
TC = 25 °C
VGS = 2 V
4
ID - Drain Current (A)
ID - Drain Current (A)
56
VGS = 1.8 V
42
28
VGS = 1.5 V
14
TC = 125 °C
3
2
1
TC = -55 °C
0
0
0
0.5
1
1.5
0
2
0.5
1.5
2
Transfer Characteristics
Output Characteristics
8800
0.023
C - Capacitance (pF)
VGS = 1.8 V
0.019
RDS(on) - On-Resistance (Ω)
1
VGS - Gate-to-Source Voltage (V)
VDS - Drain- to- Source Voltage (V)
0.015
VGS = 2.5 V
0.011
VGS = 4.5 V
6600
Ciss
4400
2200
0.007
Coss
Crss
0.003
0
0
14
28
42
56
70
0
5
ID - Drain Current (A)
15
20
Capacitance
On-Resistance vs. Drain Current
10
1.5
ID = 16.7 A
VGS = 10 V, 15 A, 2.5 V, 13 A
VDS = 8 V
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
10
VDS - Drain-to-Source Voltage (V)
8
VDS = 15 V
6
4
VDS = 16 V
2
0
1.3
VGS = 1.8 V, 5 A
1.1
0.9
0.7
0
30
60
90
Qg - Total Gate Charge (nC)
Gate Charge
S14-0911-Rev. A, 28-Apr-14
120
-50
-25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Normalized On-Resistance vs. Junction Temperature
Document Number: 63239
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiS407ADN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted)
100
0.015
R DS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 15 A
TJ = 150 °C
10
TJ = 25 °C
1
0.1
0.0
0.013
TJ = 125 °C
0.010
TJ = 25 °C
0.008
0.005
0.3
0.6
0.9
0
1.2
2
4
6
8
10
V GS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
50
0.80
ID = 250 μA
40
Power (W)
VGS(th) (V)
0.65
0.50
30
20
0.35
10
0.2
-50
-25
0
25
50
75
100
125
0
0.01
150
TJ - Temperature ( °C)
0.1
1
10
100
600
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by IDM
I D - Drain Current (A)
Limited by R DS(on)*
10
100 μs
1 ms
1
10 ms
100 ms
10s, 1 s
0.1
DC,
TA = 25 °C
BVDSS Limited
0.01
0.1
1
10
100
V DS - Drain-to-Source Voltage (V)
* V GS > minimum VGS at which R DS(on) is specified
Safe Operating Area, Junction-to-Ambient
S14-0911-Rev. A, 28-Apr-14
Document Number: 63239
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiS407ADN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted)
65
ID - Drain Current (A)
52
39
26
13
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
48
2.0
36
1.5
Power (W)
Power (W)
Current Derating*
24
1.0
0.5
12
0.0
0
0
25
50
75
100
T C - Case Temperature (°C)
Power, Junction-to-Case
125
150
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S14-0911-Rev. A, 28-Apr-14
Document Number: 63239
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiS407ADN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
Notes:
0.02
PDM
0.01
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 81 °C/W
Single Pulse
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
0.001
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
100
10
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63239.
S14-0911-Rev. A, 28-Apr-14
Document Number: 63239
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
D4
PowerPAK® 1212-8, (Single / Dual)
W
H
E2
E4
L
K
M
θ
e
1
Z
D5
D
D2
2
2
D1
8
1
5
4
θ
4
b
3
L1
E3
A1
Backside view of single pad
H
2
E1
E
Detail Z
L
K
E2
E4
D2 D3(2x) D4
c
A
H
1
D1
2
K1
Notes
1. Inch will govern
2 Dimensions exclusive of mold gate burrs
3. Dimensions exclusive of mold flash and cutting burrs
D2
3
4
b
θ
D5
θ
E3
Backside view of dual pad
DIM.
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.97
1.04
1.12
0.038
0.041
0.044
A1
0.00
-
0.05
0.000
-
0.002
b
0.23
0.30
0.41
0.009
0.012
0.016
c
0.23
0.28
0.33
0.009
0.011
0.013
D
3.20
3.30
3.40
0.126
0.130
0.134
D1
2.95
3.05
3.15
0.116
0.120
0.124
D2
1.98
2.11
2.24
0.078
0.083
0.088
D3
0.48
-
0.89
0.019
-
0.035
D4
0.47 typ.
D5
2.3 typ.
0.0185 typ
0.090 typ
E
3.20
3.30
3.40
0.126
0.130
0.134
E1
2.95
3.05
3.15
0.116
0.120
0.124
E2
1.47
1.60
1.73
0.058
0.063
0.068
E3
1.75
1.85
1.98
0.069
0.073
0.078
E4
0.034 typ.
0.013 typ.
e
0.65 BSC
0.026 BSC
K
0.86 typ.
K1
0.35
-
0.034 typ.
-
0.014
-
-
H
0.30
0.41
0.51
0.012
0.016
0.020
L
0.30
0.43
0.56
0.012
0.017
0.022
L1
0.06
0.13
0.20
0.002
0.005
0.008
0°
-
12°
0°
-
12°
W
0.15
0.25
0.36
0.006
0.010
0.014
M
0.125 typ.
0.005 typ.
ECN: S16-2667-Rev. M, 09-Jan-17
DWG: 5882
Revison: 09-Jan-17
Document Number: 71656
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AN822
Vishay Siliconix
PowerPAK® 1212 Mounting and Thermal Considerations
Johnson Zhao
MOSFETs for switching applications are now available
with die on resistances around 1 mΩ and with the
capability to handle 85 A. While these die capabilities
represent a major advance over what was available
just a few years ago, it is important for power MOSFET
packaging technology to keep pace. It should be obvious that degradation of a high performance die by the
package is undesirable. PowerPAK is a new package
technology that addresses these issues. The PowerPAK
1212-8 provides ultra-low thermal impedance in a
small package that is ideal for space-constrained
applications. In this application note, the PowerPAK
1212-8’s construction is described. Following this,
mounting information is presented. Finally, thermal
and electrical performance is discussed.
THE PowerPAK PACKAGE
The PowerPAK 1212-8 package (Figure 1) is a derivative of PowerPAK SO-8. It utilizes the same packaging
technology, maximizing the die area. The bottom of the
die attach pad is exposed to provide a direct, low resistance thermal path to the substrate the device is
mounted on. The PowerPAK 1212-8 thus translates
the benefits of the PowerPAK SO-8 into a smaller
package, with the same level of thermal performance.
(Please refer to application note “PowerPAK SO-8
Mounting and Thermal Considerations.”)
The PowerPAK 1212-8 has a footprint area comparable to TSOP-6. It is over 40 % smaller than standard
TSSOP-8. Its die capacity is more than twice the size
of the standard TSOP-6’s. It has thermal performance
an order of magnitude better than the SO-8, and 20
times better than TSSOP-8. Its thermal performance is
better than all current SMT packages in the market. It
will take the advantage of any PC board heat sink
capability. Bringing the junction temperature down also
increases the die efficiency by around 20 % compared
with TSSOP-8. For applications where bigger packages are typically required solely for thermal consideration, the PowerPAK 1212-8 is a good option.
Both the single and dual PowerPAK 1212-8 utilize the
same pin-outs as the single and dual PowerPAK SO-8.
The low 1.05 mm PowerPAK height profile makes both
versions an excellent choice for applications with
space constraints.
PowerPAK 1212 SINGLE MOUNTING
To take the advantage of the single PowerPAK 1212-8’s
thermal performance see Application Note 826,
Recommended Minimum Pad Patterns With Outline
Drawing Access for Vishay Siliconix MOSFETs. Click
on the PowerPAK 1212-8 single in the index of this
document.
In this figure, the drain land pattern is given to make full
contact to the drain pad on the PowerPAK package.
This land pattern can be extended to the left, right, and
top of the drawn pattern. This extension will serve to
increase the heat dissipation by decreasing the thermal resistance from the foot of the PowerPAK to the
PC board and therefore to the ambient. Note that
increasing the drain land area beyond a certain point
will yield little decrease in foot-to-board and foot-toambient thermal resistance. Under specific conditions
of board configuration, copper weight, and layer stack,
experiments have found that adding copper beyond an
area of about 0.3 to 0.5 in2 of will yield little improvement in thermal performance.
Figure 1. PowerPAK 1212 Devices
Document Number 71681
03-Mar-06
www.vishay.com
1
AN822
Vishay Siliconix
PowerPAK 1212 DUAL
To take the advantage of the dual PowerPAK 1212-8’s
thermal performance, the minimum recommended
land pattern can be found in Application Note 826,
Recommended Minimum Pad Patterns With Outline
Drawing Access for Vishay Siliconix MOSFETs. Click
on the PowerPAK 1212-8 dual in the index of this document.
The gap between the two drain pads is 10 mils. This
matches the spacing of the two drain pads on the PowerPAK 1212-8 dual package.
This land pattern can be extended to the left, right, and
top of the drawn pattern. This extension will serve to
increase the heat dissipation by decreasing the thermal resistance from the foot of the PowerPAK to the
PC board and therefore to the ambient. Note that
increasing the drain land area beyond a certain point
will yield little decrease in foot-to-board and foot-toambient thermal resistance. Under specific conditions
of board configuration, copper weight, and layer stack,
experiments have found that adding copper beyond an
area of about 0.3 to 0.5 in2 of will yield little improvement in thermal performance.
ture profile used, and the temperatures and time
duration, are shown in Figures 2 and 3. For the lead
(Pb)-free solder profile, see http://www.vishay.com/
doc?73257.
REFLOW SOLDERING
Vishay Siliconix surface-mount packages meet solder
reflow reliability requirements. Devices are subjected
to solder reflow as a preconditioning test and are then
reliability-tested using temperature cycle, bias humidity, HAST, or pressure pot. The solder reflow tempera-
Ramp-Up Rate
+ 6 °C /Second Maximum
Temperature at 155 ± 15 °C
120 Seconds Maximum
Temperature Above 180 °C
70 - 180 Seconds
Maximum Temperature
240 + 5/- 0 °C
Time at Maximum Temperature
20 - 40 Seconds
Ramp-Down Rate
+ 6 °C/Second Maximum
Figure 2. Solder Reflow Temperature Profile
10 s (max)
210 - 220 °C
3 ° C/s (max)
4 ° C/s (max)
183 °C
140 - 170 °C
50 s (max)
3° C/s (max)
60 s (min)
Pre-Heating Zone
Reflow Zone
Maximum peak temperature at 240 °C is allowed.
Figure 3. Solder Reflow Temperatures and Time Durations
www.vishay.com
2
Document Number 71681
03-Mar-06
AN822
Vishay Siliconix
TABLE 1: EQIVALENT STEADY STATE PERFORMANCE
Package
SO-8
TSSOP-8
TSOP-8
PPAK 1212
PPAK SO-8
Configuration
Single
Dual
Single
Dual
Single
Dual
Single
Dual
Single
Dual
Thermal Resiatance RthJC(C/W)
20
40
52
83
40
90
2.4
5.5
1.8
5.5
PowerPAK 1212
Standard SO-8
49.8 °C
2.4 °C/W
Standard TSSOP-8
85 °C
20 °C/W
TSOP-6
149 °C
52 °C/W
125 °C
40 °C/W
PC Board at 45 °C
Figure 4. Temperature of Devices on a PC Board
THERMAL PERFORMANCE
Introduction
Spreading Copper
A basic measure of a device’s thermal performance is
the junction-to-case thermal resistance, Rθjc, or the
junction to- foot thermal resistance, Rθjf. This parameter
is measured for the device mounted to an infinite heat
sink and is therefore a characterization of the device
only, in other words, independent of the properties of the
object to which the device is mounted. Table 1 shows a
comparison of the PowerPAK 1212-8, PowerPAK SO-8,
standard TSSOP-8 and SO-8 equivalent steady state
performance.
By minimizing the junction-to-foot thermal resistance, the
MOSFET die temperature is very close to the temperature of the PC board. Consider four devices mounted on
a PC board with a board temperature of 45 °C (Figure 4).
Suppose each device is dissipating 2 W. Using the junction-to-foot thermal resistance characteristics of the
PowerPAK 1212-8 and the other SMT packages, die
temperatures are determined to be 49.8 °C for the PowerPAK 1212-8, 85 °C for the standard SO-8, 149 °C for
standard TSSOP-8, and 125 °C for TSOP-6. This is a
4.8 °C rise above the board temperature for the PowerPAK 1212-8, and over 40 °C for other SMT packages. A
4.8 °C rise has minimal effect on rDS(ON) whereas a rise
of over 40 °C will cause an increase in rDS(ON) as high
as 20 %.
Designers add additional copper, spreading copper, to
the drain pad to aid in conducting heat from a device. It
is helpful to have some information about the thermal
performance for a given area of spreading copper.
Figure 5 and Figure 6 show the thermal resistance of a
PowerPAK 1212-8 single and dual devices mounted on
a 2-in. x 2-in., four-layer FR-4 PC boards. The two internal layers and the backside layer are solid copper. The
internal layers were chosen as solid copper to model the
large power and ground planes common in many applications. The top layer was cut back to a smaller area and
at each step junction-to-ambient thermal resistance
measurements were taken. The results indicate that an
area above 0.2 to 0.3 square inches of spreading copper
gives no additional thermal performance improvement.
A subsequent experiment was run where the copper on
the back-side was reduced, first to 50 % in stripes to
mimic circuit traces, and then totally removed. No significant effect was observed.
Document Number 71681
03-Mar-06
www.vishay.com
3
AN822
Vishay Siliconix
130
105
Spreading Copper (sq. in.)
Spreading Copper (sq. in.)
120
95
110
100
RthJ A (°C/W)
RthJA (°C/W)
85
75
65
90
80
50 %
100 %
70
100 %
55
0%
60
50 %
0%
50
45
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
Figure 5. Spreading Copper - Si7401DN
Figure 6. Spreading Copper - Junction-to-Ambient Performance
CONCLUSIONS
As a derivative of the PowerPAK SO-8, the PowerPAK
1212-8 uses the same packaging technology and has
been shown to have the same level of thermal performance while having a footprint that is more than 40 %
smaller than the standard TSSOP-8.
Recommended PowerPAK 1212-8 land patterns are
provided to aid in PC board layout for designs using this
new package.
The PowerPAK 1212-8 combines small size with attractive thermal characteristics. By minimizing the thermal
rise above the board temperature, PowerPAK simplifies
thermal design considerations, allows the device to run
cooler, keeps rDS(ON) low, and permits the device to
handle more current than a same- or larger-size MOSFET die in the standard TSSOP-8 or SO-8 packages.
www.vishay.com
4
Document Number 71681
03-Mar-06
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single
0.152
(3.860)
0.039
0.068
(0.990)
(1.725)
0.010
(0.255)
(2.390)
0.094
0.088
(2.235)
0.016
(0.405)
0.026
(0.660)
0.025
0.030
(0.635)
(0.760)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72597
Revision: 21-Jan-08
www.vishay.com
7
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2022
1
Document Number: 91000
工商网监
湘ICP备2023018690号
