SIS429DNT-T1-GE3

SiS429DNT www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PowerPAK® 1212-8T Single D D 8 D 7 D 6 5 3. 3 m m 1 3.3 mm Top View • TrenchFET® power MOSFET • 100 % Rg and UIS tested • Thin 0.8 mm profile 1 2 S 3 S 4 S G Bottom View PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = -10 V RDS(on) max. (Ω) at VGS = -4.5 V Qg typ. (nC) ID (A) d, e Configuration -30 0.021 0.034 15 -20 Single • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS S • Notebook PC - Load switch - Battery switch - Adaptor switch G D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK 1212-8T SiS429DNT-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) ID IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS Avalanche current Single-pulse avalanche energy L = 0.1 mH IAS EAS Maximum power dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Operating junction and storage temperature range Soldering recommendations (peak temperature) f, g TJ, Tstg LIMIT -30 ± 20 -20 e -20 e -10.5 a, b -8.3 a, b -50 -20 e -2.9 a, b -20 20 27.8 17.8 3.5 a, b 2.2 a, b -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient a, c Maximum junction-to-case t ≤ 10 s Steady state SYMBOL RthJA RthJC TYPICAL 29 3.6 MAXIMUM 36 4.5 UNIT °C/W Notes a. Surface mounted on 1" x 1" FR4 board b. t = 10 s c. Maximum under steady state conditions is 81 °C/W d. Based on TC = 25 °C e. Package limited f. See solder profile (www.vishay.com/doc?73257). The Thin PowerPAK 1212-8T is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection g. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S19-0832-Rev. C, 30-Sep-2019 Document Number: 62964 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS429DNT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = -250 μA -30 - - V - -31 - - 4.5 - Static Drain-source breakdown voltage VDS temperature coefficient ΔVDS/TJ VGS(th) temperature coefficient ΔVGS(th)/TJ Gate-source threshold voltage ID = -250 μA mV/°C VGS(th) VDS = VGS, ID = -250 μA -1 - -3 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a VDS = -30 V, VGS = 0 V - - -1 VDS = -30 V, VGS = 0 V, TJ = 55 °C - - -5 VDS ≥ -10 V, VGS = -10 V -30 - - VGS = -10 V, ID = -10.5 A - 0.0175 0.0210 VGS = -4.5 V, ID = -8.3 A - 0.0283 0.0340 VDS = -10 V, ID = -10.5 A - 23 - - 1350 - - 215 - - 185 - VDS = -15 V, VGS = -10 V, ID = -10.5 A - 32 50 - 15 25 VDS = -15 V, VGS = -4.5 V, ID = -10.5 A - 4 - - 7.5 - f = 1 MHz 1.2 5.8 11.6 - 10 15 - 8 15 - 45 70 tf - 12 25 td(on) - 42 70 - 35 60 - 40 70 - 16 30 RDS(on) gfs μA A Ω S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = -15 V, VGS = 0 V, f = 1 MHz td(on) tr td(off) tr td(off) VDD = -15 V, RL = 1.8 Ω ID ≅ -8.4 A, VGEN = -10 V, Rg = 1 Ω VDD = -15 V, RL = 1.8 Ω ID ≅ -8.4 A, VGEN = -4.5 V, Rg = 1 Ω tf pF nC Ω ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current (t = 100 μs) ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = -8.4 A, VGS = 0 V IF = -8.4 A, di/dt = 100 A/μs, TJ = 25 °C - - -20 - - -50 - -0.85 -1.2 - 34 60 ns - 22 40 nC - 11 - - 23 - A V ns Notes a. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S19-0832-Rev. C, 30-Sep-2019 Document Number: 62964 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS429DNT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 50 6.0 VGS = 10 V thru 5 V I D - Drain Current (A) I D - Drain Current (A) 40 VGS = 4 V 30 20 4.5 3.0 TC = 25 °C 1.5 10 VGS = 3 V TC = 125 °C TC = -55 °C 0.0 0.5 1.0 1.5 2.0 0 VDS - Drain-to-Source Voltage (V) 2 3 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.060 2400 0.045 1800 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0 0.0 VGS = 4.5 V 0.030 VGS = 10 V 1 4 Ciss 1200 600 0.015 Coss Crss 0 0.000 0 10 20 30 40 0 50 12 18 24 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 30 1.8 10 R DS(on) - On-Resistance (Normalized) ID = 9.1 A VGS - Gate-to-Source Voltage (V) 6 ID - Drain Current (A) 8 VDS = 15 V 6 VDS = 7.5 V VDS = 22.5 V 4 2 ID = 9.1 A VGS = 10 V 1.5 1.2 0.9 VGS = 4.5 V 0.6 0 0 9 18 27 36 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S19-0832-Rev. C, 30-Sep-2019 Document Number: 62964 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS429DNT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.10 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 100 10 TJ = 150 °C TJ = 25 °C 1 0.08 0.06 0.04 TJ = 125 °C 0.02 TJ = 25 °C 0.00 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage -1.0 120 -1.2 96 -1.4 Power (W) VGS(th) (V) 0.1 0.0 -1.6 10 72 48 ID = 250 µA -1.8 24 -2.0 0 -50 -25 0 25 50 75 100 125 150 TJ - Temperature (°C) 0.1 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 0.001 100 0.01 1 10 Limited by IDM Limited by RDS(on) (1) 100 µs I D - Drain Current (A) 10 1 ms 10 ms 1 100 ms 0.1 1s 10 s TA = 25 °C Single pulse DC BVDSS limited 0.01 0.1 (1) 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area S19-0832-Rev. C, 30-Sep-2019 Document Number: 62964 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS429DNT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 35 ID - Drain Current (A) 30 25 Package limited 20 15 10 5 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating a 2.0 35 28 Power (W) Power (W) 1.5 21 14 1.0 0.5 7 0.0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) T A - Ambient Temperature (°C) Power, Junction-to-Case Power Derating, Junction-to-Ambient 150 Note c. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S19-0832-Rev. C, 30-Sep-2019 Document Number: 62964 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS429DNT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 0.02 t2 1. Duty cycle, D = Single pulse 3. TJM - TA = PDMZthJA(t) 4. Surface mounted t1 t2 2. Per unit base = R thJA = 81 °C/W 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62964. S19-0832-Rev. C, 30-Sep-2019 Document Number: 62964 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® 1212-8T MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. A 0.70 0.75 0.80 0.028 0.030 MAX. 0.031 A1 0.00 - 0.05 0.000 - 0.002 b 0.23 0.30 0.41 0.009 0.012 0.016 c 0.23 0.28 0.33 0.009 0.011 0.013 D 3.20 3.30 3.40 0.126 0.130 0.134 D1 2.95 3.05 3.15 0.116 0.120 0.124 D2 1.98 2.11 2.24 0.078 0.083 0.088 D3 0.48 - 0.89 0.019 - 0.035 D4 0.47 TYP. 0.0185 TYP. D5 2.3 TYP. 0.090 TYP. E 3.20 3.30 3.40 0.126 0.130 0.134 E1 2.95 3.05 3.15 0.116 0.120 0.124 E2 1.47 1.60 1.73 0.058 0.063 0.068 E3 1.75 1.85 1.98 0.069 0.073 0.078 0.34 TYP. E4 0.013 TYP. e 0.65 BSC 0.026 BSC K 0.86 TYP. 0.034 TYP. K1 0.35 - - 0.014 - - H 0.30 0.41 0.51 0.012 0.016 0.020 L 0.30 0.43 0.56 0.012 0.017 0.022 L1 0.06 0.13 0.20 0.002 0.005 0.008  0° - 12° 0° - 12° W 0.15 0.25 0.36 0.006 0.010 0.014 M 0.125 TYP. 0.005 TYP. ECN: T13-0056-Rev. A, 18-Feb-13 DWG: 6012 Revison: 18-Feb-13 1 Document Number: 62836 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix Recommended Minimum PADs for Thin PowerPAK® 1212-8T 1 2 3 4 0.039 (0.99) 0.068 (1.73) 0.026 (0.66) 0.088 (2.24) 0.094 (2.39) 0.010 (0.25) 0.016 (0.41) 0.152 (3.86) 0.025 (0.64) 0.056 (1.42) 0.030 (0.76) Revision: 07-Sep-2020 Document Number: 66832 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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