SIS496EDNT-T1-GE3

SiS496EDNT www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PowerPAK® 1212-8S • TrenchFET® power MOSFET D D D 7 8 D 6 5 • 100 % Rg and UIS tested • Thin 0.75 mm height • Typical ESD performance 2500 V 3. 3 m m 1 3.3 mm Top View 3 4 S G Bottom View 2 S 1 S APPLICATIONS D • DC/DC converter • Battery switch PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 30 0.0048 0.0062 14 50 a Single • Power management G • For mobile computing S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK 1212-8S SiS496EDNT-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current (t = 100 μs) Avalanche current Avalanche energy SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C L = 0.1 mH TC = 25 °C Continuous source-drain diode current TA = 25 °C TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e ID IDM IAS EAS IS PD TJ, Tstg LIMIT 30 ± 20 50 a 50 a 20.4 b, c 16.3 b, c 200 25 31 43.3 3.2 b, c 52 33 3.8 b, c 2 b, c -55 to +150 260 UNIT V A mJ A W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient b, f Maximum junction-to-case (drain) t  10 s Steady state SYMBOL RthJA RthJC TYPICAL 24 1.9 MAXIMUM 33 2.4 UNIT °C/W Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The Thin PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposedcopper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 81 °C/W S17-1452-Rev. C, 18-Sep-17 Document Number: 62867 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS496EDNT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 30 - - - V 30 - - -5.2 - Static Drain-source breakdown voltage VDS temperature coefficient VDS/TJ VGS(th) temperature coefficient VGS(th)/TJ Gate-source threshold voltage VGS(th) Gate-source leakage IGSS Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance a ID = 250 μA VDS = VGS, ID = 250 μA 1 - 2.5 VDS = 0 V, VGS = ± 20 V - - ± 20 mV/°C V VDS = 0 V, VGS = ± 10 V - - ±1 VDS = 30 V, VGS = 0 V - - 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C - - 5 VDS  5 V, VGS = 10 V 20 - - A VGS = 10 V, ID = 20 A - 0.0040 0.0048 VGS = 4.5 V, ID = 18 A - 0.0051 0.0062  VDS = 15 V, ID = 20 A - 80 - - 1515 - - 322 - - 175 - - 29 45 - 14 21 VDS = 10 V, VGS = 4.5 V, ID = 20 A - 4.5 - - 4.2 - f = 1 MHz 0.2 1.2 2.4 - 20 30 - 125 190 - 24 40 tf - 10 20 td(on) - 10 20 IDSS ID(on) RDS(on) gfs μA S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 20 A td(on) tr td(off) tr td(off) VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 4.5 V, Rg = 1  VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 10 V, Rg = 1  tf - 16 24 - 25 40 - 3 8 pF nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current (t = 100 μs) ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = 10 A, VGS = 0 V IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C - - 50 - - 200 - 0.8 1.2 V - 20 40 ns - 10 20 nC - 8 - - 12 - A ns Notes a. Pulse test: pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing    Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-1452-Rev. C, 18-Sep-17 Document Number: 62867 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS496EDNT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.050 10-1 TJ = 25 °C 10-2 10-3 IGSS - Gate Current (A) IGSS - Gate Current (mA) 0.040 0.030 0.020 10-4 TJ = 150 °C 10-5 10-6 TJ = 25 °C 10-7 0.010 10-8 10-9 0.000 0 6 12 18 24 30 0 11 VGS - Gate-Source Voltage (V) 22 33 44 VGS - Gate-to-Source Voltage (V) Gate Source Voltage vs. Gate Current Gate Source Voltage vs. Gate Current 2 50 VGS = 10 V thru 4 V VGS = 3 V 1.5 ID - Drain Current (A) ID - Drain Current (A) 40 30 20 TC = 25 °C 1 0.5 10 TC = 125 °C 0 0 0.5 1 1.5 TC = -55 °C 0 2 0 0.6 VDS - Drain-to-Source Voltage (V) 1.8 2.4 3 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Output Characteristics 0.0075 2100 1680 0.006 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 1.2 VGS = 4.5 V 0.0045 VGS = 10 V Ciss 1260 840 0.003 420 Coss Crss 0 0.0015 0 10 20 30 40 ID - Drain Current (A) On-Resistance vs. Drain Current S17-1452-Rev. C, 18-Sep-17 50 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 62867 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS496EDNT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 10 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 20 A VDS = 8 V ID = 20 A 8 VDS = 15 V 6 4 VDS = 24 V 2 VGS = 10 V 1.65 VGS = 4.5 V 1.3 0.95 0.6 0 0 5 10 15 20 25 -50 -25 Qg - Total Gate Charge (nC) 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Gate Charge 100 50 10 Power (W) IS - Source Current (A) 40 TJ = 150 °C TJ = 25 °C 30 20 1 10 0.1 0.0 0.3 0.6 0.9 0.1 1 10 100 600 VSD - Source-to-Drain Voltage (V) Time (s) Source-Drain Diode Forward Voltage Single Pulse Power (Junction-to-Ambient) 2 0.012 ID = 250 μA ID = 20 A RDS(on) - On-Resistance (Ω) 1.75 VGS(th) (V) 0 0.01 1.2 1.5 1.25 1 0.009 TJ = 125 °C 0.006 TJ = 25 °C 0.003 0.000 -50 -25 0 25 50 75 100 125 150 0 2 4 6 8 10 TJ - Temperature (°C) VGS - Gate-to-Source Voltage (V) Threshold Voltage On-Resistance vs. Gate-to-Source Voltage S17-1452-Rev. C, 18-Sep-17 Document Number: 62867 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS496EDNT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1000 100 Limited by RDS(on) (1) ID - Drain Current (A) 100 μs 10 1 ms 10 ms 1 100 ms 10 s, 1 s 0.1 DC, 0.01 TA = 25 °C Single pulse BVDSS limited 0.001 0.1 (1) 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 64 90 72 ID - Drain Current (A) Power (W) 48 32 16 54 36 18 0 0 0 25 50 75 100 125 150 0 25 50 75 100 TC - Case Temperature (°C) TC - Case Temperature (°C) Power Junction-to-Case Current Derating a 125 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S17-1452-Rev. C, 18-Sep-17 Document Number: 62867 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS496EDNT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty cycle, D = 0.02 t1 t2 2. Per unit base = RthJA = 81 °C/W 3. T JM - TA = PDMZthJA(t) Single pulse 0.01 10-4 4. Surface mounted 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty cycle = 0.5 0.2 0.1 0.1 Single pulse 0.05 0.02 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case                      Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62867. S17-1452-Rev. C, 18-Sep-17 Document Number: 62867 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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