SIS888DN-T1-GE3

SiS888DN www.vishay.com Vishay Siliconix N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (MAX.) ID (A)f 0.058 at VGS = 10 V 20.2 0.085 at VGS = 7.5 V 16.6 VDS (V) 150 • ThunderFET® technology optimizes balance of RDS(on), Qg, Qsw and Qoss Qg (TYP.) • 100 % Rg and UIS tested 7.6 nC • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PowerPAK 1212-8S 3.3 mm S 1 3.3 mm S 2 APPLICATIONS D • Primary side switch S 3 0.75 mm G • Synchronous rectification 4 • DC/DC conversion 8 G • Load switching D D 7 D 6 • Boost converters D Bottom View 5 • DC/AC inverters Ordering Information: SiS888DN-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) SYMBOL LIMIT Drain-Source Voltage PARAMETER VDS 150 Gate-Source Voltage VGS ± 20 TC = 25 °C 16 ID TA = 25 °C 5.3 a,b 4.3 a,b TA = 70 °C Pulsed Drain Current (t = 300 μs) IDM TC = 25 °C Continuous Source-Drain Diode Current L = 0.1 mH Single Pulse Avalanche Energy Maximum Power Dissipation 40 g 3.1 a,b IAS 10 EAS 5 TC = 25 °C 52 TC = 70 °C 33 PD TA = 25 °C mJ W 3.7 a,b 2.4 a,b TA = 70 °C Operating Junction and Storage Temperature Range A 50 IS TA = 25 °C Single Pulse Avalanche Current V 20.2 TC = 70 °C Continuous Drain Current (TJ = 150 °C) UNIT TJ, Tstg -55 to 150 Soldering Recommendations (Peak Temperature) c,d °C 260 THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient SYMBOL a,e Maximum Junction-to-Case (Drain) TYPICAL MAXIMUM t  10 s RthJA 26 33 Steady State RthJC 1.9 2.4 UNIT °C/W Notes a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components. e. Maximum under steady state conditions is 81 °C/W. f. Based on TC = 25 °C. g. Package limited. S13-2288-Rev. A, 04-Nov-13 Document Number: 63548 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS888DN www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. VDS VGS = 0 V, ID = 250 μA 150 TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage ID = 250 μA VGS(th) VDS = VGS, ID = 250 μA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V 97 mV/°C -6.9 3 4.2 V ± 100 nA VDS = 150 V, VGS = 0 V 1 VDS = 150 V, VGS = 0 V, TJ = 55 °C 10 VDS  5 V, VGS = 10 V 20 μA A VGS = 10 V, ID = 10 A 0.048 0.058 VGS = 7.5 V, ID = 7 A 0.066 0.085 VDS = 15 V, ID = 10 A 11  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Output Charge Qoss VDS = 75 V, VGS = 0 V Rg f = 1 MHz Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 420 VDS = 75 V, VGS = 0 V, f = 1 MHz td(off) pF 16 VDS = 75 V, VGS = 10 V, ID = 10 A VDS = 75 V, VGS = 7.5 V, ID = 10 A 9.5 14.5 7.6 11.5 nC 2.5 3.6 td(on) tr 130 VDD = 75 V, RL = 7.5  ID  10 A, VGEN = 7.5 V, Rg = 1  0.4 23.6 36 1.3 2 13 26 11 22 14 28 tf 9 18 td(on) 12 24 8 16 tr td(off) VDD = 75 V, RL = 7.5  ID  10 A, VGEN = 10 V, Rg = 1  tf 13 26 8 16  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 40 50 IS = 4 A, VGS = 0 V IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C A 0.85 1.2 V 94 180 ns 190 380 nC 35 59 ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-2288-Rev. A, 04-Nov-13 Document Number: 63548 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS888DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 60 50 VGS = 10 V thru 9 V ID - Drain Current (A) 48 40 ID - Drain Current (A) VGS = 8 V 36 VGS = 7 V 24 VGS = 6 V 12 TC = 125 °C VGS = 4 V 0 4.0 6.0 8.0 TC = - 55 °C 0 0.0 10.0 2.0 4.0 6.0 8.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.15 1000 0.12 800 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 2.0 TC = 25 °C 20 10 VGS = 5 V 0.0 30 0.09 VGS = 7.5 V VGS = 10 V 0.06 10.0 Coss 600 Ciss 400 0.03 200 0.00 0 Crss 0 10 20 30 40 0 50 16 32 64 80 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage Capacitance 2.0 10 RDS(on) - On-Resistance (Normalized) VDS = 75 V ID = 10 A VGS - Gate-to-Source Voltage (V) 48 VDS = 50 V 8 6 VDS = 100 V 4 2 VGS = 10 V ID = 10 A 1.7 1.4 VGS = 7.5 V 1.1 0.8 0.5 0 0.0 2.0 4.0 6.0 Qg - Total Gate Charge (nC) Gate Charge S13-2288-Rev. A, 04-Nov-13 8.0 10.0 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 63548 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS888DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.30 100 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 10 A 0.24 10 TJ = 150 °C TJ = 25 °C 1 0.1 0.01 0.18 TJ = 125 °C 0.12 TJ = 25 °C 0.06 0.001 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 5 6 VSD - Source-to-Drain Voltage (V) 0.2 80 - 0.1 60 Power (W) VGS(th) - Variance (V) 100 ID = 5 mA - 0.4 - 1.0 0 25 50 75 10 40 20 ID = 250 μA - 25 9 On-Resistance vs. Gate-to-Source Voltage 0.5 - 50 8 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage - 0.7 7 100 125 150 0 0.001 0.01 TJ - Temperature (°C) 0.1 1 10 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 IDM Limited ID - Drain Current (A) 10 100 μs ID Limited 1 1 ms Limited by RDS(on)* 10 ms 0.1 100 ms TA = 25 °C Single Pulse 0.01 0.01 1s BVDSS Limited 10 s DC 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S13-2288-Rev. A, 04-Nov-13 Document Number: 63548 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS888DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 25 ID - Drain Current (A) 20 15 10 5 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 65 2.0 52 1.6 39 1.2 Power (W) Power (W) Current Derating* 26 13 0.8 0.4 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S13-2288-Rev. A, 04-Nov-13 Document Number: 63548 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS888DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 81 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 0.0001 0.001 4. Surface Mounted 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63548. S13-2288-Rev. A, 04-Nov-13 Document Number: 63548 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix Case Outline for PowerPAK® 1212-8S A 0.10 C 2x D 8 7 Z 6 5 D1 5 6 b 4 3 7 8 2 1 K1 E1 E K B L 0.10 C 1 2x 2 3 4 Pin 1 dot e 0.10 M C A B 0.05 M C 0.10 C C A A3 0.08 C A1 A MIN. 0.67 MILLIMETERS NOM. 0.75 MAX. 0.83 MIN. 0.026 INCHES NOM. 0.030 MAX. 0.033 A1 0.00 - 0.05 0.000 - 0.002 DIM. A3 0.20 ref. 0.008 ref b 0.25 0.30 0.35 0.010 0.012 D 3.20 3.30 3.40 0.126 0.130 0.134 D1 2.15 2.25 2.35 0.085 0.089 0.093 E 3.20 3.30 3.40 0.126 0.130 0.134 E1 1.60 1.70 1.80 0.063 0.067 0.071 e 0.65 bsc. 0.026 bsc. K 0.76 ref. 0.030 ref. K1 L 0.41 ref. 0.33 Z 0.43 0.525 ref. 0.014 0.016 ref. 0.53 0.013 0.017 0.021 0.021 ref. ECN: C20-0862-Rev. B, 20-Jul-2020 DWG: 6008 Revision: 20-Jul-2020 Document Number: 63919 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single 0.152 (3.860) 0.039 0.068 (0.990) (1.725) 0.010 (0.255) (2.390) 0.094 0.088 (2.235) 0.016 (0.405) 0.026 (0.660) 0.025 0.030 (0.635) (0.760) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72597 Revision: 21-Jan-08 www.vishay.com 7 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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