SISA18BDN-T1-GE3

SiSA18BDN www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PowerPAK® 1212-8PT D 5 D 6 D 7 D 8 • TrenchFET® Gen IV power MOSFET • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3. 3 0.75 mm 0 m m 1 3.3 4 G mm Top View 2 S 3 S 1 S D • High power density DC/DC • Synchronous rectification Bottom View • Power conversion PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration APPLICATIONS G • Load switch 30 0.00683 0.01050 6.2 60 Single S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK 1212-8PT SISA18BDN-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) ID IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS Maximum power dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e TJ, Tstg LIMIT 30 +20, -16 60 48 18 b, c 14 b, c 90 33.4 2.9 b, c 11 6 36.8 23.5 3.2 b, c 2.1 b, c -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SMYBOL TYPICAL MAXIMUM UNIT Maximum junction-to-ambient b, f t  10 s RthJA 31 39 °C/W 2.7 3.4 Maximum junction-to-case (drain) Steady state RthJC Notes a. Based on TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8PT is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 68 °C/W S23-0366-Rev. B, 29-May-2023 Document Number: 62003 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSA18BDN www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0 V, ID = 250 μA 30 - - VDSt VGS = 0 V, ID(aval) = 20 A, ttranscient  50 ns 36 - - UNIT Static Drain-source breakdown voltage Drain-source breakdown voltage (c) (transient) VDS temperature coefficient VDS/TJ VGS(th) temperature coefficient VGS(th)/TJ Gate-source threshold voltage ID = 250 μA - 17 - - -4.4 - V mV/°C VGS(th) VDS = VGS, ID = 250 μA 1.2 - 2.4 V Gate-source leakage IGSS VDS = 0 V, VGS = +20, -16 V - - ± 100 nA Zero gate voltage drain current IDSS Drain-source on-state resistance a Forward transconductance a VDS = 30 V, VGS = 0 V - - 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C - - 10 VGS = 10 V, ID = 10 A - 0.00550 0.00683 VGS = 4.5 V, ID = 8 A - 0.00830 0.01050 VDS = 10 V, ID = 20 A - RDS(on) gfs 42 - μA  S Dynamic b Input capacitance Ciss - 680 - Output capacitance Coss - 266 - Reverse transfer capacitance Crss VDS = 15 V, VGS = 0 V, f = 1 MHz Crss/Ciss ratio Total gate charge Qg VDS = 15 V, VGS = 10 V, ID = 10 A VDS = 15 V, VGS = 4.5 V, ID = 10 A - 54 - - 0.08 0.16 - 12.2 19 - 6.2 9.5 Gate-source charge Qgs Gate-drain charge Qgd Output charge Qoss VDS = 15 V, VGS = 0 V - 7 - Gate resistance Rg f = 1 MHz 0.3 1.5 3 - 8 15 - 5 10 - 15 30 tf - 5 10 td(on) - 12 25 - 55 110 - 15 30 - 12 25 Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time td(on) VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 10 V, Rg = 1  tr td(off) tr td(off) VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 4.5 V, Rg = 1  tf - 2.3 - - 2.3 - pF nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current a ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = 5 A IF = 5 A, di/dt = 100 A/μs, TJ = 25 °C - - 33.4 - - 90 - 0.8 1.1 V - 15 30 ns - 5 10 nC - 7 - - 8 - A ns Notes a. Pulse test: pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing c. Based on characterization, not subject to production testing Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S23-0366-Rev. B, 29-May-2023 Document Number: 62003 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSA18BDN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 10000 100 VGS = 10 V thru 5 V 40 100 1000 60 1st line 2nd line 1000 VGS = 4 V 60 2nd line ID - Drain Current (A) 80 1st line 2nd line 40 TC = 25 °C 20 20 VGS = 3 V 0.5 1.0 1.5 2.0 2.5 10 0 10 0 TC = -55 °C TC = 125 °C 0 0 3.0 1 2 4 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title 5 Axis Title 10000 10000 1000 800 0.015 VGS = 4.5 V 0.010 100 0.005 10 0 20 40 60 80 1000 600 400 Coss 200 VGS = 10 V 0 Ciss 1st line 2nd line 1000 2nd line C - Capacitance (pF) 0.020 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 3 VDS - Drain-to-Source Voltage (V) 0.025 Crss 10 0 5 10 15 20 25 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance Axis Title 1000 1st line 2nd line VDS = 10 V VDS = 20 V 4 100 2 10 0 3 6 9 12 15 2nd line RDS(on) - On-Resistance (Normalized) VDS = 15 V 6 10000 1.6 ID = 10 A 8 30 Axis Title 10000 0 100 0 100 10 2nd line VGS - Gate-to-Source Voltage (V) 100 ID = 10 A VGS = 10 V 1.4 1000 1.2 VGS = 4.5 V 1.0 100 0.8 10 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S23-0366-Rev. B, 29-May-2023 1st line 2nd line 2nd line ID - Drain Current (A) 80 Document Number: 62003 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSA18BDN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 0.03 10000 1 TJ = 25 °C 100 0.1 1000 0.02 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 1000 1st line 2nd line 2nd line IS - Source Current (A) 0.025 TJ = 150 °C 10 0.015 TJ = 125 °C 0.01 100 0.005 TJ = 25 °C 0 0.2 0.4 0.6 0.8 1.0 10 0 10 0.01 1.2 0 2 4 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 10000 2.0 10000 200 1.8 160 1.4 100 1.2 120 1st line 2nd line 1st line 2nd line ID = 250 μA 1000 2nd line P - Power (W) 1000 1.6 2nd line VGS(th) (V) 6 80 100 40 1.0 10 0.8 -50 -25 0 25 50 75 0 0.0001 0.001 0.01 100 125 150 0.1 1 10 100 10 1000 TJ - Junction Temperature (°C) t - Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient Axis Title 100 10000 10 Limited by RDS(on) 100 μs a 1000 1 ms 1 1st line 2nd line 2nd line ID - Drain Current (A) IDM limited 10 ms 100 ms 100 10s, 1s 0.1 TA = 25 °C, single pulse 0.01 0.01 DC BVDSS limited 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area Note a. VGS > minimum VGS at which RDS(on) is specified S23-0366-Rev. B, 29-May-2023 Document Number: 62003 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSA18BDN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 72 60 36 100 24 1000 27 1st line 2nd line 1000 48 2nd line P - Power (W) 36 1st line 2nd line 2nd line ID - Drain Current (A) 10000 45 18 100 9 12 10 0 0 25 50 75 100 125 150 10 0 0 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating a Power, Junction-to-Case 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S23-0366-Rev. B, 29-May-2023 Document Number: 62003 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSA18BDN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 Duty cycle = 0.5 Notes 0.2 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 PDM 0.1 0.1 t1 t2 t1 1. Duty cycle, D = t 2 2. Per unit base = RthJA =68°C/W 0.05 0.02 3. TJM - TA = PDMZthJA Single pulse 100 (t) 4. Surface mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 10000 1000 0.2 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.1 0.05 100 0.02 Single pulse 0.1 0.0001 10 0.001 0.01 0.1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62003. S23-0366-Rev. B, 29-May-2023 Document Number: 62003 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single 0.152 (3.860) 0.039 0.068 (0.990) (1.725) 0.010 (0.255) (2.390) 0.094 0.088 (2.235) 0.016 (0.405) 0.026 (0.660) 0.025 0.030 (0.635) (0.760) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72597 Revision: 21-Jan-08 www.vishay.com 7 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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