SiSA35DN
www.vishay.com
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET
FEATURES
PowerPAK® 1212-8 Single
• TrenchFET® Gen III p-channel power MOSFET
D
D 8
D 7
D 6
5
3.
3
m
m
1
3.3
mm
Top View
• 100 % Rg tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
1
2 S
3 S
4 S
G
Bottom View
APPLICATIONS
• Load switch
PRODUCT SUMMARY
VDS (V)
• DC/DC converters
-30
RDS(on) max. () at VGS = -10 V
0.019
RDS(on) max. () at VGS = -4.5 V
0.030
Qg typ. (nC)
13.5
ID (A) a
-16
Configuration
S
• Adapter switch
G
• High speed switching
• Power
management
in
battery-operated, mobile and
wearable devices
P-Channel MOSFET
D
Single
ORDERING INFORMATION
Package
PowerPAK 1212-8
Lead (Pb)-free and halogen-free
SiSA35DN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
-30
Gate-source voltage
VGS
± 20
TC = 70 °C
TA =25 °C
-16 a
ID
-10 b, c
-8 b, c
TA = 70 °C
Pulsed drain current (t = 100 μs)
Continuous source-drain diode current
Maximum power dissipation
IDM
TC = 25 °C
TA = 70 °C
-16 a
IS
-2.6 b, c
24
TC = 70 °C
15
PD
W
3.2 b, c
2.1 b, c
TA = 70 °C
Operating junction and storage temperature range
A
-50
TC = 25 °C
TA = 25 °C
V
-16 a
TC = 25 °C
Continuous drain current (TJ = 150 °C)
UNIT
TJ, Tstg
-55 to +150
Soldering recommendations (peak temperature) e, f
°C
260
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
Maximum junction-to-ambient b, d
t 10 s
RthJA
31
39
Maximum junction-to-case (drain)
Steady state
RthJC
4.2
5.2
UNIT
°C/W
Notes
a. Package limited, TC = 25 °
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. Maximum under steady state conditions is 81 °C/W
e. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
S19-0901-Rev. A, 28-Oct-2019
Document Number: 75831
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSA35DN
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = -250 μA
-30
-
-
-
V
-25
-
-
4.5
-
Static
Drain-source breakdown voltage
VDS temperature coefficient
VDS/TJ
VGS(th) temperature coefficient
VGS(th)/TJ
ID = -250 μA
Gate-source threshold voltage
mV/°C
VGS(th)
VDS = VGS, ID = -250 μA
-1
-
-2.2
V
Gate-source leakage
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 100
nA
Zero gate voltage drain current
IDSS
On-state drain current a
ID(on)
Drain-source on-state resistance a
Forward transconductance a
RDS(on)
gfs
VDS = -30 V, VGS = 0 V
-
-
-1
VDS = -30 V, VGS = 0 V, TJ = 55 °C
-
-
-10
VDS -5 V, VGS = 10 V
-10
-
-
A
VGS = -10 V, ID = -9 A
-
0.015
0.019
VGS = -4.5 V, ID = -7 A
-
0.023
0.030
VDS = -10 V, ID = -9 A
-
25
-
-
1500
-
VDS = -15 V, VGS = 0 V, f = 1 MHz
-
180
-
-
150
-
VDS = -15 V, VGS = -10 V, ID = -5 A
-
28
42
VDS = -15 V, VGS = -4.5 V, ID = -5 A
-
13.5
21
-
4.4
-
μA
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Gate resistance
Rg
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDS = -15 V, VGS = -4.5 V, ID = -5 A
-
4.3
-
0.6
3.3
6.6
-
26
50
-
30
60
-
21
40
tf
-
16
30
td(on)
-
9
20
-
18
35
-
23
45
-
15
30
f = 1 MHz
td(on)
tr
td(off)
tr
td(off)
VDD = -15 V, RL = 15 , ID -1 A,
VGEN = -4.5 V, Rg = 1
VDD = -15 V, RL = 15 , ID -1 A,
VGEN = -10 V, Rg = 1
tf
pF
nC
ns
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulse diode forward current
ISM
Body diode voltage
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
TC = 25 °C
IS = -5 A, VGS = 0 V
IF = -5 A, di/dt = 100 A/μs,
TJ = 25 °C
-
-
-16
-
-
-50
-
-0.82
-1.2
-
20
40
ns
-
10
20
nC
-
10
-
-
10
-
A
V
ns
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S19-0901-Rev. A, 28-Oct-2019
Document Number: 75831
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSA35DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
40.0
10000
VGS = 4 V
30.0
1000
25.0
20.0
15.0
100
10.0
VGS = 3 V
2nd line
ID - Drain Current (A)
35
1st line
2nd line
2nd line
ID - Drain Current (A)
35.0
10000
30
1000
25
1st line
2nd line
VGS = 10V thru 5 V
40
20
15
TC = 25 °C
5
5.0
0
0.5
1.0
1.5
2.0
2.5
10
0
3.0
1
2
3
4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
Axis Title
2000
1st line
2nd line
1000
0.020
100
VGS = 10 V
0.010
10000
Ciss
1500
1000
1st line
2nd line
VGS = 4.5 V
2nd line
C - Capacitance (pF)
10000
0.030
5
Axis Title
0.040
2nd line
RDS(on) - On-Resistance (Ω)
TC = -55 °C
TC = 125 °C
0
10
0
100
10
1000
100
500
Coss
10
0
10
20
30
0
40
0
10
5
10
20
25
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
Axis Title
VDS = 15 V
1000
1st line
2nd line
VDS = 7.5 V
VDS = 24 V
4
100
2
10
0
5
10
15
20
25
30
2nd line
RDS(on) - On-Resistance (Normalized)
8
6
10000
1.6
ID = 5 A
0
30
Axis Title
10000
10
2nd line
VGS - Gate-to-Source Voltage (V)
15
ID = 9 A
VGS = 10 V
1.4
1000
1.2
VGS = 4.5 V
1.0
100
0.8
10
0.6
-50
-25
0
25
50
75
100 125 150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S19-0901-Rev. A, 28-Oct-2019
1st line
2nd line
0
Crss
Document Number: 75831
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSA35DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
1000
TJ = 25 °C
100
1
0
0.2
0.4
0.6
0.8
1.0
1000
0.03
TJ = 125 °C
0.02
100
TJ = 25 °C
0.01
10
0
10
0.1
0.04
0
1.2
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
Axis Title
10000
2.2
10000
50
2.0
40
100
1.4
1000
30
1st line
2nd line
ID = 250 μA
1.6
2nd line
P - Power (W)
1000
1.8
1st line
2nd line
2nd line
VGS(th) - Threshold Voltage (V)
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
TJ = 150 °C
10
10000
0.05
1st line
2nd line
2nd line
IS - Source Current (A)
100
20
100
10
1.2
10
1.0
-50
-25
0
25
50
75
0
0.001
100 125 150
0.01
0.1
1
10
100
10
1000
TJ - Junction Temperature (°C)
t - Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
Limited by RDS(on) a
100
IDM limited
10000
100 μs
1000
1 ms
1st line
2nd line
2nd line
ID - Drain Current (A)
ID(ON) limited
10
10 ms
1
100 ms
100
1s
0.1
TA = 25 °C,
single pulse
10 s
DC
BVDSS limited
10
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
Safe Operating Area, Junction-to-Ambient
Note
a. VGS > minimum VGS at which RDS(on) is specified
S19-0901-Rev. A, 28-Oct-2019
Document Number: 75831
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSA35DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
35
30
1000
20
Package limited
15
100
10
1000
20
1st line
2nd line
25
2nd line
P - Power (W)
25
1st line
2nd line
2nd line
ID - Drain Current (A)
10000
30
15
100
10
5
5
10
0
0
25
50
75
100
125
150
10
0
0
25
50
75
100
125
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating a
Power, Junction-to-Foot
150
Note
a. The power dissipation PD is based on TJ max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S19-0901-Rev. A, 28-Oct-2019
Document Number: 75831
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSA35DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
1
10000
0.2
Notes
0.1
PDM
1000
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Duty cycle = 0.5
0.1
t1
0.05
t2
t1
1. Duty cycle, D = t
2
2. Per unit base = RthJA = 81 °C/W
0.02
3. TJM - TA = PDMZthJA
0.001
(t)
4. Surface mounted
Single pulse
0.01
0.0001
100
0.01
0.1
1
10
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
10000
1
0.2
1000
0.1
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Duty cycle = 0.5
0.1
0.05
0.02
100
Single pulse
0.01
0.0001
10
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?75831.
S19-0901-Rev. A, 28-Oct-2019
Document Number: 75831
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
D4
PowerPAK® 1212-8, (Single / Dual)
W
H
E2
E4
L
K
M
θ
e
1
Z
D5
D
D2
2
2
D1
8
1
5
4
θ
4
b
3
L1
E3
A1
Backside view of single pad
H
2
E1
E
Detail Z
L
K
E2
E4
D2 D3(2x) D4
c
A
H
1
D1
2
K1
Notes
1. Inch will govern
2 Dimensions exclusive of mold gate burrs
3. Dimensions exclusive of mold flash and cutting burrs
D2
3
4
b
θ
D5
θ
E3
Backside view of dual pad
DIM.
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.97
1.04
1.12
0.038
0.041
0.044
A1
0.00
-
0.05
0.000
-
0.002
b
0.23
0.30
0.41
0.009
0.012
0.016
c
0.23
0.28
0.33
0.009
0.011
0.013
D
3.20
3.30
3.40
0.126
0.130
0.134
D1
2.95
3.05
3.15
0.116
0.120
0.124
D2
1.98
2.11
2.24
0.078
0.083
0.088
D3
0.48
-
0.89
0.019
-
0.035
D4
0.47 typ.
D5
2.3 typ.
0.0185 typ
0.090 typ
E
3.20
3.30
3.40
0.126
0.130
0.134
E1
2.95
3.05
3.15
0.116
0.120
0.124
E2
1.47
1.60
1.73
0.058
0.063
0.068
E3
1.75
1.85
1.98
0.069
0.073
0.078
E4
0.034 typ.
0.013 typ.
e
0.65 BSC
0.026 BSC
K
0.86 typ.
K1
0.35
-
0.034 typ.
-
0.014
-
-
H
0.30
0.41
0.51
0.012
0.016
0.020
L
0.30
0.43
0.56
0.012
0.017
0.022
L1
0.06
0.13
0.20
0.002
0.005
0.008
0°
-
12°
0°
-
12°
W
0.15
0.25
0.36
0.006
0.010
0.014
M
0.125 typ.
0.005 typ.
ECN: S16-2667-Rev. M, 09-Jan-17
DWG: 5882
Revison: 09-Jan-17
Document Number: 71656
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single
0.152
(3.860)
0.039
0.068
(0.990)
(1.725)
0.010
(0.255)
(2.390)
0.094
0.088
(2.235)
0.016
(0.405)
0.026
(0.660)
0.025
0.030
(0.635)
(0.760)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72597
Revision: 21-Jan-08
www.vishay.com
7
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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Revision: 09-Jul-2021
1
Document Number: 91000
