SiSA72ADN
www.vishay.com
Vishay Siliconix
N-Channel 40 V (D-S) MOSFET
FEATURES
PowerPAK® 1212-8 Single
• TrenchFET® Gen IV power MOSFET
D
D 8
D 7
D 6
5
• Tuned for the lowest RDS-Qoss FOM
• 100 % Rg and UIS tested
• Qgd/Qgs ratio < 1 optimizes switching
characteristics
3.
3
m
m
1
3.3
mm
Top View
1
2 S
3 S
4 S
G
Bottom View
APPLICATIONS
D
• Synchronous rectification
PRODUCT SUMMARY
VDS (V)
RDS(on) max. () at VGS = 10 V
RDS(on) max. () at VGS = 4.5 V
Qg typ. (nC)
ID (A)
Configuration
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
• High power density DC/DC
40
0.00342
0.00466
14.8
92
Single
• DC/AC inverters
G
• Battery and load switch
N-Channel MOSFET
S
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK 1212-8
SiSA72ADN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C)
SYMBOL
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed drain current (t = 100 μs)
ID
IDM
Continuous source-drain diode current
TC = 25 °C
TA = 25 °C
IS
Single pulse avalanche current
Single pulse avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum power dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d, e
TJ, Tstg
LIMIT
40
+20, -16
92
74
24.8 b, c
19.8 b, c
150
47.2
3.3 a, b
15
11.25
52
33.3
3.7 a, b
2.4 a, b
-55 to +150
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
Maximum junction-to-ambient b, f
t 10 s
RthJA
24
33
°C/W
1.9
2.4
Maximum junction-to-case (drain)
Steady state
RthJC
Notes
a. TC = 25 °C
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 81 °C/W
S20-0582-Rev. B, 03-Aug-2020
Document Number: 79409
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSA72ADN
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 μA
40
-
-
V
-
22
-
-
-5.4
-
Static
Drain-source breakdown voltage
VDS temperature coefficient
VDS/TJ
VGS(th) temperature coefficient
VGS(th)/TJ
Gate-source threshold voltage
ID = 250 μA
mV/°C
VGS(th)
VDS = VGS, ID = 250 μA
1
-
2.4
V
Gate-source leakage
IGSS
VDS = 0 V, VGS = +20, -16 V
-
-
± 100
nA
Zero gate voltage drain current
IDSS
On-state drain current a
ID(on)
Drain-source on-state resistance a
Forward transconductance a
RDS(on)
gfs
VDS = 40 V, VGS = 0 V
-
-
1
VDS = 40 V, VGS = 0 V, TJ = 55 °C
-
-
10
VDS 5 V, VGS = 10 V
30
-
-
VGS = 10 V, ID = 10 A
-
0.00271 0.00342
VGS = 4.5 V, ID = 10 A
-
0.00388 0.00466
VDS = 10 V, ID = 10 A
-
76
-
μA
A
S
Dynamic b
Input capacitance
Ciss
-
2530
-
Output capacitance
Coss
-
465
-
Reverse transfer capacitance
Crss
-
19
-
-
0.0075
0.0150
VDS = 20 V, VGS = 0 V, f = 1 MHz
Crss/Ciss ratio
Total gate charge
Qg
VDS = 20 V, VGS = 10 V, ID = 26 A
VDS = 20 V, VGS = 4.5 V, ID = 26 A
-
33
50
-
14.8
23
-
8.2
-
-
2.3
-
Gate-source charge
Qgs
Gate-drain charge
Qgd
Output charge
Qoss
VDS = 20 V, VGS = 0 V
-
17.6
27
Gate resistance
Rg
f = 1 MHz
0.26
1.3
2.6
-
15
30
-
7
14
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
VDD = 20 V, RL = 1
ID 20.8 A, VGEN = 10 V, Rg = 1
pF
nC
-
35
70
tf
-
5
10
td(on)
-
30
60
-
150
300
-
35
70
-
14
28
-
-
47.2
-
-
150
-
0.74
1.1
V
-
22
44
ns
-
10
20
nC
-
12
-
-
10
-
tr
td(off)
VDD = 20 V, RL = 1
ID 20.8 A, VGEN = 4.5 V, Rg = 1
tf
ns
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulse diode forward current (tp = 100 μs)
ISM
Body diode voltage
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery Fall time
ta
Reverse recovery rise time
tb
TC = 25 °C
IS = 10 A
IF = 20.8 A, di/dt = 100 A/μs,
TJ = 25 °C
A
ns
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S20-0582-Rev. B, 03-Aug-2020
Document Number: 79409
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSA72ADN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
150
150
VGS = 10 V thru 7 V
120
2nd line
ID - Drain Current (A)
ID - Drain Current (A)
120
90
VGS = 3 V
60
30
90
TC = 125 °C
60
TC = 25 °C
30
TC = -55 °C
0
0
1
2
3
4
5
0
1
VDS - Drain-to-Source Voltage (V)
2nd line
2
Axis Title
Axis Title
10000
1000
VGS = 4.5 V
100
VGS = 10 V
0.003
2100
1000
1400
100
700
Coss
Crss
0
0
10
0
30
60
90
120
10
0
150
10
20
VDS - Drain-to-Source Voltage (V)
2nd line
On-Resistance vs. Drain Current
Capacitance
Axis Title
VDS = 20 V
1000
1st line
2nd line
6
VDS = 32 V
100
2
0
10
0
9
18
27
36
2nd line
RDS(on) - On-Resistance (Normalized)
VDS = 10 V
4
40
10000
1.8
10000
ID = 26 A
8
30
ID - Drain Current (A)
2nd line
Axis Title
10
10000
Ciss
1st line
2nd line
0.009
2nd line
C - Capacitance (pF)
2800
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
0.012
2nd line
VGS - Gate-to-Source Voltage (V)
4
Transfer Characteristics
Output Characteristics
0.006
3
VGS - Gate-to-Source Voltage (V)
2nd line
VGS = 10 V, ID = 10 A
1.5
1000
VGS = 4.5 V, ID = 10 A
1.2
100
0.9
0.6
10
-50
-25
0
25
50
75
100 125 150
Qg - Total Gate Charge (nC)
2nd line
TJ - Junction Temperature (°C)
2nd line
Gate Charge
On-Resistance vs. Junction Temperature
S20-0582-Rev. B, 03-Aug-2020
1st line
2nd line
0
Document Number: 79409
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSA72ADN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
1000
TJ = 150 °C
TJ = 25 °C
1
100
0.1
0.01
0.015
10000
0.010
1000
1st line
2nd line
10
1st line
2nd line
2nd line
IS - Source Current (A)
2nd line
RDS(on) - On-Resistance (Ω)
10000
100
0.3
0.6
0.9
0
10
0
1.2
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
Axis Title
100
10000
2.0
ID = 250 μA
10000
80
1.7
1000
2nd line
Power (W)
1000
1.4
60
1st line
2nd line
1st line
2nd line
2nd line
VGS(th) (V)
100
TJ = 25 °C
10
0
TJ = 150 °C
0.005
40
100
100
1.1
20
0.8
10
-50
-25
0
25
50
75
0
0.001
100 125 150
10
0.01
0.1
1
10
TJ - Temperature (°C)
2nd line
Time (s)
2nd line
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
10000
1000
IDM limited
(1)
DS(on)
100 μs
1000
10
1 ms
10 ms
100 ms
1
1st line
2nd line
2nd line
ID - Drain Current (A)
100Limited by R
10 s, 1 s
0.1
100
DC
0.01
TA = 25 °C
Single pulse
0.001
0.01
(1)
0.1
BVDSS limited
1
10
100
10
1000
VDS - Drain-to-Source Voltage (V)
VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
S20-0582-Rev. B, 03-Aug-2020
Document Number: 79409
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSA72ADN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
105
10000
1000
63
1st line
2nd line
2nd line
ID - Drain Current (A)
84
42
100
21
0
10
0
25
50
75
100
125
150
TC - Case Temperature (°C)
2nd line
Current Derating a
Axis Title
Axis Title
65
10000
2.0
52
10000
1.6
1.2
1st line
2nd line
26
2nd line
Power (W)
1000
1st line
2nd line
2nd line
Power (W)
1000
39
0.8
100
13
100
0.4
0
10
0
25
50
75
100
125
150
0
10
0
25
50
75
100
125
TC - Case Temperature (°C)
2nd line
TA - Ambient Temperature (°C)
2nd line
Power, Junction-to-Case
Power, Junction-to-Ambient
150
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S20-0582-Rev. B, 03-Aug-2020
Document Number: 79409
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSA72ADN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
10000
Duty cycle = 0.5
Notes:
0.2
PDM
0.1
0.1
t1
0.05
t2
t
1. Duty cycle, D = t1
2
2. Per unit base = RthJA = 81 °C/W
0.02
3. TJM - TA = PDMZthJA
Single pulse
0.01
0.0001
1000
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
1
0.001
0.01
100
(t)
4. Surface mounted
0.1
1
10
100
10
1000
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
10000
Duty cycle = 0.5
0.2
1000
0.1
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
1
0.05
0.1
0.02
100
Single pulse
0.01
0.0001
10
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?79409.
S20-0582-Rev. B, 03-Aug-2020
Document Number: 79409
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
D4
PowerPAK® 1212-8, (Single / Dual)
W
H
E2
E4
L
K
M
θ
e
1
Z
D5
D
D2
2
2
D1
8
1
5
4
θ
4
b
3
L1
E3
A1
Backside view of single pad
H
2
E1
E
Detail Z
L
K
E2
E4
D2 D3(2x) D4
c
A
H
1
D1
2
K1
Notes
1. Inch will govern
2 Dimensions exclusive of mold gate burrs
3. Dimensions exclusive of mold flash and cutting burrs
D2
3
4
b
θ
D5
θ
E3
Backside view of dual pad
DIM.
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.97
1.04
1.12
0.038
0.041
0.044
A1
0.00
-
0.05
0.000
-
0.002
b
0.23
0.30
0.41
0.009
0.012
0.016
c
0.23
0.28
0.33
0.009
0.011
0.013
D
3.20
3.30
3.40
0.126
0.130
0.134
D1
2.95
3.05
3.15
0.116
0.120
0.124
D2
1.98
2.11
2.24
0.078
0.083
0.088
D3
0.48
-
0.89
0.019
-
0.035
D4
0.47 typ.
D5
2.3 typ.
0.0185 typ
0.090 typ
E
3.20
3.30
3.40
0.126
0.130
0.134
E1
2.95
3.05
3.15
0.116
0.120
0.124
E2
1.47
1.60
1.73
0.058
0.063
0.068
E3
1.75
1.85
1.98
0.069
0.073
0.078
E4
0.034 typ.
0.013 typ.
e
0.65 BSC
0.026 BSC
K
0.86 typ.
K1
0.35
-
0.034 typ.
-
0.014
-
-
H
0.30
0.41
0.51
0.012
0.016
0.020
L
0.30
0.43
0.56
0.012
0.017
0.022
L1
0.06
0.13
0.20
0.002
0.005
0.008
0°
-
12°
0°
-
12°
W
0.15
0.25
0.36
0.006
0.010
0.014
M
0.125 typ.
0.005 typ.
ECN: S16-2667-Rev. M, 09-Jan-17
DWG: 5882
Revison: 09-Jan-17
Document Number: 71656
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single
0.152
(3.860)
0.039
0.068
(0.990)
(1.725)
0.010
(0.255)
(2.390)
0.094
0.088
(2.235)
0.016
(0.405)
0.026
(0.660)
0.025
0.030
(0.635)
(0.760)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72597
Revision: 21-Jan-08
www.vishay.com
7
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 09-Jul-2021
1
Document Number: 91000
