SISF04DN-T1-GE3

SiSF04DN www.vishay.com Vishay Siliconix Common Drain Dual N-Channel 30 V (S1-S2) MOSFET FEATURES PowerPAK® 1212-8SCD S2 S2 6 5 • TrenchFET® Gen IV power MOSFET • Very low source-to-source on resistance • Integrated common-drain n-channel MOSFETs in a compact and thermally enhanced package • 100 % Rg and UIS tested S1 S1 8 7 S1 S2 • Optimizes circuit layout for bi-directional current flow 3. 3 1 2 G 3 D 1 4 D 1 2 G2 m m m 1 .3 m 3 Top View Bottom View PRODUCT SUMMARY VS1S2 (V) RS1S2(on) max. () at VGS = 10 V RS1S2(on) max. () at VGS = 4.5 V Qg typ. (nC) g IS1S2 (A) a Configuration • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS S1 • Battery protection switch G1 • Bi-directional switch 30 0.0040 0.0060 19 • Load switch N-Channel 1 MOSFET N-Channel 2 MOSFET G2 108 Common drain S2 ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK 1212-8SCD SiSF04DN-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VS1S2 VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) LIMIT 30 +16 / -12 108 86 30 b, c 24 b, c 190 69.4 44.4 5.2 b, c 3.3 b, c -55 to +150 260 IS1S2 IS1S2M TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) c PD TJ, Tstg UNIT V A W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient b Maximum junction-to-case (drain) t  10 s Steady state SYMBOL RthJA RthJC TYPICAL 19 1.4 MAXIMUM 24 1.8 UNIT °C/W Notes a. TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8SCD is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 63 °C/W g. Single MOSFET S19-0764-Rev. A, 02-Sep-2019 Document Number: 77230 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSF04DN www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a VDS VGS = 0 V, ID = 250 μA 30 - - VGS(th) VS1S2 = VGS, ID = 250 μA 1 - 2.3 IGSS VS1S2 = 0 V, VGS = +16 V / -12 V - - ± 100 VS1S2 = 30 V, VGS = 0 V - - 1 VS1S2 = 30 V, VGS = 0 V, TJ = 70 °C - - 15 VS1S2  10 V, VGS = 10 V 20 - - A VGS = 10 V, IS1S2 = 7 A - 0.0030 0.0040 VGS = 4.5 V, IS1S2 = 5 A - 0.0043 0.0060  VS1S2 = 10 V, IS1S2 = 35 A - 115 - - 2600 - - 1100 - - 65 - - 40 60 - 19 29 VDS = 10 V, VGS = 4.5 V, ID = 5 A - 7.2 - - 4.7 - f = 1 MHz 0.2 1.1 2.2 - 12 25 - 21 40 - 30 60 tf - 6 15 td(on) - 25 50 - 50 100 - 32 60 - 17 35 IDSS IS1S2(on) RS1S2(on) Forward transconductance a gfs V nA μA S Dynamic b, c Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID =5 A td(on) tr td(off) tr td(off) VDD = 15 V, RL = 3 , IS1S2  5 A, VGEN = 10 V, Rg = 1  VDD = 15 V, RL = 3 , ID  5 A, VGEN = 4.5 V, Rg = 1  tf pF nC  ns Drain-Source Body Diode Characteristics c TC = 25 °C - - 60 IS1S2M - - 190 Body diode reverse recovery time trr - 37 75 ns Body diode reverse recovery charge Qrr - 28 60 nC Reverse recovery fall time ta - 20 - Reverse recovery rise time tb - 17 - Continuous source-drain diode current Pulse diode forward current IS1S2 IF = 5 A, di/dt = 100 A/μs, TJ = 25 °C A ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing c. On single MOSFET Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S19-0764-Rev. A, 02-Sep-2019 Document Number: 77230 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSF04DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100.0 10000 10000 100 VGS = 10V thru 4 V VGS = 3 V 40.0 100 20.0 1000 60 1st line 2nd line 1000 60.0 2nd line ID - Source Current (A) 80 1st line 2nd line 2nd line IS1S2 - Source Current (A) 80.0 40 TC = 25 °C 100 20 TC = 125 °C 0 10 0 0.5 1.0 1.5 2.0 2.5 TC = -55 °C 0 3.0 10 0 1 2 3 4 VS1S2 - Source-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title Note: for one channel only 10000 3000 10000 0.006 Ciss 2500 0.003 VGS = 10 V 100 0.002 1000 2000 Coss 1500 100 1000 500 0.001 20 40 60 80 10 0 100 5 10 20 IS1S2 - Source Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Source Current and Gate Voltage Capacitance 10000 VDS = 15 V 1000 1st line 2nd line VDS = 7.5 V VDS = 24 V 100 2 10 0 0 10 20 30 40 2nd line RS1S2(on) - On-Resistance (Normalized) 8 6 10000 1.6 ID = 5 A 4 25 Axis Title Note: for one channel only 10 2nd line VGS - Gate-to-Source Voltage (V) 15 ID = 7 A VGS = 10 V 1.4 1000 1.2 VGS = 4.5 V 1.0 100 0.8 10 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S19-0764-Rev. A, 02-Sep-2019 1st line 2nd line 0 Crss 0 10 0 1st line 2nd line 1000 0.004 2nd line C - Capacitance (pF) VGS = 4.5 V 1st line 2nd line 2nd line RS1S2(on) - On-Resistance (Ω) 0.005 Document Number: 77230 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSF04DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 10000 2.0 TJ = 25 °C 1 100 0.1 0.2 0.4 0.6 0.8 1.0 ID = 250 μA 1.4 100 1.2 1.0 10 0.8 10 0 1000 1.6 -50 1.2 -25 0 25 50 75 100 125 150 VFS1S2 - Source-to-Source Voltage (V) TJ - Junction Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage Axis Title Axis Title 10000 0.015 80 10000 0.012 0.006 TJ = 125 °C 100 1000 1st line 2nd line 0.009 2nd line P - Power (W) 60 1000 1st line 2nd line 2nd line RS1S2(on) - On-Resistance (Ω) 1st line 2nd line 1000 2nd line VGS(th) - Treshold Voltage (V) 10 1st line 2nd line 2nd line IFS1S2 - Source Current (A) 1.8 TJ = 150 °C 40 100 20 0.003 TJ = 25 °C 10 0 0 2 4 6 8 10 0 0.001 0.01 0.1 1 10 100 10 1000 VGS - Gate-to-Source Voltage (V) t - Time (s) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient S19-0764-Rev. A, 02-Sep-2019 Document Number: 77230 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSF04DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 1000 10000 Limited by RS1S2(on) 2nd line IS1S2 - Source Current (A) 100 IS1S2M limited a IS1S2(ON) limited 1st line 2nd line 100 μs 1000 10 1 ms 10 ms 1 100 ms 1s 10 s TA = 25 °C, single pulse 0.1 100 DC BVS1S2 limited 0.01 0.01 0.1 1 10 10 100 VS1S2 - Source-to-Source Voltage (V) Safe Operating Area, Junction-to-Ambient Axis Title Axis Title 10000 120 100 60 100 40 1000 60 1st line 2nd line 1000 80 2nd line P - Power (W) 80 1st line 2nd line 2nd line IS1S2 - Source Current (A) 10000 100 40 100 20 20 10 0 0 25 50 75 100 125 TC - Case Temperature (°C) Current Derating b 150 10 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power, Junction-to-Case Notes a. VGS > minimum VGS at which RDS(on) is specified b. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S19-0764-Rev. A, 02-Sep-2019 Document Number: 77230 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSF04DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 1 10000 0.2 Notes 0.1 PDM 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.1 t1 0.05 t2 t1 1. Duty cycle, D = t 2 2. Per unit base = RthJA = 63 °C/W 0.02 3. TJM - TA = PDMZthJA (t) 4. Surface mounted Single pulse 0.01 0.0001 100 0.001 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 10000 Duty cycle = 0.5 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.2 0.1 100 0.05 0.02 Single pulse 0.1 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77230. S19-0764-Rev. A, 02-Sep-2019 Document Number: 77230 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® 1212-8S CD with Flip Chip C D A H A Pin 1 dot B 7 2 6 3 5 4 e 2x b 1 (8) 0.1 M C A B 0.05 M C 8 K1 E1 E E c Nxb E1 A1 0.1 C 0.05 C 0.1 C 2x H 0.1 C H D1 K L D Backside view DIM. MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.70 0.75 0.80 0.027 0.029 0.031 A1 0 0.02 0.05 0 0.001 0.002 b 0.27 0.32 0.37 0.011 0.013 0.015 c - 0.20 ref. - - 0.008 ref. - D 3.20 3.30 3.40 0.126 0.130 0.134 D1 1.76 1.86 1.96 0.069 0.073 0.077 E 3.20 3.30 3.40 0.126 0.130 0.134 E1 1.18 1.28 1.38 0.046 0.050 0.054 e 0.60 0.65 0.70 0.024 0.026 0.028 K 0.50 typ. 0.020 typ. K1 0.35 typ. 0.014 typ. H 0.10 0.20 0.30 0.006 0.008 0.010 L 0.84 0.94 1.04 0.033 0.037 0.041 ECN: C17-1732-Rev. A, 18-Dec-17 DWG: 6061 Revision: 18-Dec-17 Document Number: 76263 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix Recommended Land Pattern PowerPAK® 1212-8S CD 1 8 2 7 3 6 4 5 3.90 3.30 0.40 0.30 1.29 1.46 0.45 8 2 7 3 6 4 5 3.30 0.20 0.32 2.37 2.35 0.65 0.42 1 0.65 0.40 0.48 0.47 0.30 Revision: 05-Jan-2021 Document Number: 63021 1 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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