SISF06DN-T1-GE3

SiSF06DN www.vishay.com Vishay Siliconix Common Drain Dual N-Channel 30 V (S1-S2) MOSFET FEATURES PowerPAK® 1212-8SCD S2 S2 6 5 • TrenchFET® Gen IV power MOSFET • Very low source-to-source on resistance • Integrated common-drain n-channel MOSFETs in a compact and thermally enhanced package • 100 % Rg and UIS tested S1 S1 8 7 S1 S2 • Optimizes circuit layout for bi-directional current flow 3. 3 1 2 G 3 D 1 4 D 1 2 G2 m m m 1 .3 m 3 Top View Bottom View PRODUCT SUMMARY VS1S2 (V) RS1S2(on) max. (Ω) at VGS = 10 V RS1S2(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) g IS1S2 (A) a Configuration • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS S1 • Battery protection switch G1 • Bi-directional switch 30 0.00450 0.00695 14 • Load switch N-Channel 1 MOSFET N-Channel 2 MOSFET G2 101 Common drain S2 ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK 1212-8SCD SiSF06DN-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VS1S2 VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) LIMIT 30 +20 / -16 101 81 28 b, c 22 b, c 190 69.4 44.4 5.2 b, c 3.3 b, c -55 to +150 260 IS1S2 IS1S2M TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) c PD TJ, Tstg UNIT V A W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient b Maximum junction-to-case (drain) t ≤ 10 s Steady state SYMBOL RthJA RthJC TYPICAL 19 1.4 MAXIMUM 24 1.8 UNIT °C/W Notes a. TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8SCD is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 63 °C/W g. Single MOSFET S19-1142-Rev. A, 13-Jan-2020 Document Number: 77407 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSF06DN www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a VDS VGS = 0 V, ID = 250 μA 30 - - VGS(th) VS1S2 = VGS, ID = 250 μA 1 - 2.3 IGSS VS1S2 = 0 V, VGS = +20 V / -16 V - - ± 100 VS1S2 = 30 V, VGS = 0 V - - 1 VS1S2 = 30 V, VGS = 0 V, TJ = 70 °C - - 15 VS1S2 ≥ 10 V, VGS = 10 V 20 - - VGS = 10 V, IS1S2 = 7 A - 0.00344 0.00450 VGS = 4.5 V, IS1S2 = 5 A - 0.00536 0.00695 VS1S2 = 10 V, IS1S2 = 35 A - 115 - - 2050 - - 855 - - 40 - - 30 45 - 14 21 VDS = 10 V, VGS = 4.5 V, ID = 5 A - 6.1 - - 2.8 - f = 1 MHz 0.2 1.1 2.2 - 18 36 - 10 20 - 35 70 tf - 10 20 td(on) - 30 60 - 60 120 - 35 70 - 20 40 IDSS IS1S2(on) RS1S2(on) Forward transconductance a gfs V nA μA A Ω S Dynamic b, c Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID =5 A td(on) tr td(off) tr td(off) VDD = 15 V, RL = 3 Ω, IS1S2 ≅ 5 A, VGEN = 10 V, Rg = 1 Ω VDD = 15 V, RL = 3 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω tf pF nC Ω ns Drain-Source Body Diode Characteristics c TC = 25 °C - - 60 IS1S2M - - 190 Body diode reverse recovery time trr - 34 51 ns Body diode reverse recovery charge Qrr - 25 50 nC Reverse recovery fall time ta - 17 - Reverse recovery rise time tb - 17 - Continuous source-drain diode current Pulse diode forward current IS1S2 IF = 5 A, di/dt = 100 A/μs, TJ = 25 °C A ns Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing c. On single MOSFET Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S19-1142-Rev. A, 13-Jan-2020 Document Number: 77407 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSF06DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title VGS = 10 V thru 5VAxis Title 100 10000 100.0 10000 TC = -55 °C VGS = 4 V VGS = 3 V 40.0 100 75 1000 50 TC = 125 °C 100 25 TC = 25 °C 20.0 0 0.5 1.0 1.5 2.0 2.5 10 0 10 0 1st line 2nd line 60.0 2nd line ID - Drain Current (A) 1000 1st line 2nd line 2nd line ID - Drain Current (A) 80.0 0 3.0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title Axis Title 10000 0.010 10000 10 000 VGS = 10 V 0.004 100 Coss 1000 100 100 Crss 0.002 20 40 60 80 0 100 5 10 15 20 25 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Source Current and Gate Voltage Capacitance Axis Title Axis Title 10000 1.5 ID = 5 A 8 1000 1st line 2nd line 6 VDS = 8, 15, 24 V 4 100 2 10 0 6 12 18 24 30 2nd line RDS(on) - On-Resistance (Normalized) 10 0 30 10000 VGS = 10 V, 7 A 1.3 1000 1.1 VGS = 4.5 V, 5 A 100 0.9 10 0.7 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S19-1142-Rev. A, 13-Jan-2020 1st line 2nd line 0 10 10 10 0 2nd line VGS - Gate-to-Source Voltage (V) 1000 1st line 2nd line 1000 VGS = 4.5 V 0.006 2nd line C - Capacitance (pF) 0.008 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) Ciss Document Number: 77407 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSF06DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 2.0 10000 100 10000 1000 TJ = 25 °C TJ = 150 °C 1 1.7 1000 1st line 2nd line 2nd line VGS(th) (V) 10 1st line 2nd line 2nd line IS - Source Current (A) ID = 250 μA 1.4 100 100 0.1 1.1 0.01 10 0 0.2 0.4 0.6 0.8 1.0 10 0.8 1.2 -50 -25 0 25 50 75 100 125 150 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage Axis Title Axis Title 10000 0.015 80 10000 0.012 60 TJ = 125 °C 0.006 100 1000 1st line 2nd line 0.009 2nd line P - Power (W) 1000 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) ID = 7 A 40 100 20 0.003 TJ = 25 °C 10 0 0 2 4 6 8 0 0.001 10 0.01 0.1 1 10 100 10 1000 VGS - Gate-to-Source Voltage (V) t - Time (s) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient Axis Title 10000 1000 IDM limited 100 μs 1 ms Limited by RDS(on) 1000 a 10 1st line 2nd line 2nd line ID - Drain Current (A) 100 10 ms 100 ms 1 10 s, 1 s 100 DC 0.1 TA = 25 °C, single pulse BVDSS limited 10 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area, Junction-to-Ambient Notes a. VGS > minimum VGS at which RDS(on) is specified S19-1142-Rev. A, 13-Jan-2020 Document Number: 77407 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSF06DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 120 10000 100 10000 100 1000 60 1st line 2nd line 60 2nd line P - Power (W) 1000 1st line 2nd line 2nd line ID - Drain Current (A) 80 90 40 100 30 20 10 0 0 25 50 75 100 125 150 10 0 0 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating a Power, Junction-to-Case 150 Notes a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S19-1142-Rev. A, 13-Jan-2020 Document Number: 77407 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSF06DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 1 10000 0.2 Notes 0.1 PDM 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.1 t1 0.05 t2 t1 1. Duty cycle, D = t 2 2. Per unit base = RthJA = 63 °C/W 0.02 3. TJM - TA = PDMZthJA (t) 4. Surface mounted Single pulse 0.01 0.0001 100 0.001 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 10000 Duty cycle = 0.5 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.2 0.1 100 0.05 0.02 Single pulse 0.1 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77407. S19-1142-Rev. A, 13-Jan-2020 Document Number: 77407 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® 1212-8S CD with Flip Chip C D A H A Pin 1 dot B 7 2 6 3 5 4 e 2x b 1 (8) 0.1 M C A B 0.05 M C 8 K1 E1 E E c Nxb E1 A1 0.1 C 0.05 C 0.1 C 2x H 0.1 C H D1 K L D Backside view DIM. MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.70 0.75 0.80 0.027 0.029 0.031 A1 0 0.02 0.05 0 0.001 0.002 b 0.27 0.32 0.37 0.011 0.013 0.015 c - 0.20 ref. - - 0.008 ref. - D 3.20 3.30 3.40 0.126 0.130 0.134 D1 1.76 1.86 1.96 0.069 0.073 0.077 E 3.20 3.30 3.40 0.126 0.130 0.134 E1 1.18 1.28 1.38 0.046 0.050 0.054 e 0.60 0.65 0.70 0.024 0.026 0.028 K 0.50 typ. 0.020 typ. K1 0.35 typ. 0.014 typ. H 0.10 0.20 0.30 0.006 0.008 0.010 L 0.84 0.94 1.04 0.033 0.037 0.041 ECN: C17-1732-Rev. A, 18-Dec-17 DWG: 6061 Revision: 18-Dec-17 Document Number: 76263 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix Recommended Land Pattern PowerPAK® 1212-8S CD 1 8 2 7 3 6 4 5 3.90 3.30 0.40 0.30 1.29 1.46 0.45 8 2 7 3 6 4 5 3.30 0.20 0.32 2.37 2.35 0.65 0.42 1 0.65 0.40 0.48 0.47 0.30 Revision: 05-Jan-2021 Document Number: 63021 1 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000