SiSF20DN
www.vishay.com
Vishay Siliconix
Common - Drain Dual N-Channel 60 V (S1-S2) MOSFET
FEATURES
PowerPAK® 1212-8SCD
S2
S2 6
5
• TrenchFET® Gen IV power MOSFET
• Very low source-to-source on resistance
• Integrated common-drain n-channel MOSFETs
in a compact and thermally enhanced package
• 100 % Rg and UIS tested
S1
S1 8
7
S1
S2
• Optimizes circuit layout for bi-directional current flow
3.
3
1
2 G
3 D 1
4 D 1
2
G2
m
m
m
1
3
3.
m
Top View
Bottom View
APPLICATIONS
S1
• Battery protection switch
G1
• Bi-directional switch
PRODUCT SUMMARY
VS1S2 (V)
RS1S2(on) max. () at VGS = 10 V
RS1S2(on) max. () at VGS = 4.5 V
Qg typ. (nC)
IS1S2 (A)
Configuration
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
60
0.0130
0.0185
10.2 g
52 a
Common - Drain
• Load switch
• 24 V systems
N-Channel 1 MOSFET
N-Channel 2 MOSFET
G2
S2
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK 1212-8SCD
SiSF20DN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C)
SYMBOL
VS1S2
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed drain current (t = 100 μs)
LIMIT
60
± 20
52
41
14 b, c
11 b, c
100
69.4
44.4
5.2 b, c
3.3 b, c
-55 to +150
260
IS1S2
IS1S2M
TC = 25 °C
TC = 70 °C
Maximum power dissipation
TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature) c
PS1S2
TJ, Tstg
UNIT
V
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient b
Maximum junction-to-case (drain)
t 10 s
Steady state
SYMBOL
RthJA
RthJC
TYPICAL
19
1.4
MAXIMUM
24
1.8
UNIT
°C/W
Notes
a. TC = 25 °C
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8SCD is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 63 °C/W
g. Single MOSFET
S18-1210-Rev. A, 10-Dec-2018
Document Number: 76915
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSF20DN
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
VDS
VGS = 0 V, ID = 250 μA
60
-
-
VGS(th)
VS1S2 = VGS, ID = 250 μA
1
-
3
IGSS
VS1S2 = 0 V, VGS = ± 20 V
-
-
± 100
VS1S2 = 60 V, VGS = 0 V
-
-
1
VS1S2 = 60 V, VGS = 0 V, TJ = 70 °C
-
-
15
VS1S2 10 V, VGS = 10 V
20
-
-
A
VGS = 10 V, IS1S2 = 7 A
-
0.0100
0.0130
VGS = 4.5 V, IS1S2 = 5 A
-
0.0140
0.0185
VS1S2 = 10 V, IS1S2 = 25 A
-
75
-
-
1290
-
-
340
-
-
8
-
VDS = 30 V, VGS = 10 V, ID =5 A
-
22
33
-
10.2
16
VDS = 30 V, VGS = 4.5 V, ID = 5 A
-
3.9
-
-
2.9
-
f = 1 MHz
0.14
0.7
1.4
-
10
20
-
5
10
-
19
40
tf
-
5
10
td(on)
-
15
30
-
50
100
-
24
50
-
7
15
-
-
52
-
-
100
-
30
60
ns
-
18
35
nC
-
15
-
-
15
-
IDSS
IS1S2(on)
RS1S2(on)
Forward transconductance a
gfs
V
nA
μA
S
Dynamic b, c
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Gate resistance
Rg
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDS = 30 V, VGS = 0 V, f = 1 MHz
td(on)
tr
td(off)
tr
td(off)
VDD = 30 V, RL = 6 , IS1S2 5 A,
VGEN = 10 V, Rg = 1
VDD = 30 V, RL = 6 , ID 5 A,
VGEN = 4.5 V, Rg = 1
tf
pF
nC
ns
Drain-Source Body Diode Characteristics c
Continuous source-drain diode current
Pulse diode forward current
IS1S2
TC = 25 °C
IS1S2M
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
IF = 5 A, di/dt = 100 A/μs,
TJ = 25 °C
A
ns
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. On single MOSFET
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S18-1210-Rev. A, 10-Dec-2018
Document Number: 76915
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSF20DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
100
10000
10000
100
VGS = 10 V thru 5 V
40
100
VGS = 3 V
20
80
1000
60
1st line
2nd line
1st line
2nd line
2nd line
IS1S2 - Source Current (A)
1000
60
2nd line
IS1S2 - Source Current (A)
VGS = 4 V
80
40
TC = 25 °C
100
20
TC = -55 °C
TC = 125 °C
0
10
0
0.5
1.0
1.5
2.0
2.5
0
3.0
10
0
1
2
3
4
VS1S2 - Source-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
Axis Title
5
Note: for one channel only
1600
10000
0.025
10000
0.015
0.010
100
VGS = 10 V
1200
1000
1st line
2nd line
1000
2nd line
C - Capacitance (pF)
VGS = 4.5 V
1st line
2nd line
800
100
Coss
400
0.005
Crss
0
20
40
60
80
10
0
10
0
0
100
10
20
40
50
IS1S2 - Source Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Source Current and Gate Voltage
Capacitance
Note: for one channel only
Axis Title
VDS = 30 V
1000
VDS = 24 V
VDS = 15 V
4
1st line
2nd line
6
100
2
10
0
0
5
10
15
20
25
2nd line
RS1S2(on) - On-Resistance (Normalized)
ID = 5 A
8
60
10000
2.0
10000
10
2nd line
VGS - Gate-to-Source Voltage (V)
30
ID = 7 A
1.8
VGS = 10 V
1.6
1000
1.4
VGS = 4.5 V
1.2
100
1.0
0.8
10
0.6
-50
-25
0
25
50
75
100 125 150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S18-1210-Rev. A, 10-Dec-2018
1st line
2nd line
2nd line
RS1S2(on) - On-Resistance (Ω)
Ciss
0.020
Document Number: 76915
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSF20DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
1.6
1
TJ = 25 °C
1000
1.4
ID = 250 μA
1.2
100
100
0.1
1.0
0.01
0.2
0.4
0.6
0.8
1.0
10
0.8
10
0
-50
1.2
-25
0
25
50
75
100 125 150
VFS1S2 - Source-to-Source Voltage (V)
TJ - Junction Temperature (°C)
Source-Drain Diode Forward Voltage
Threshold Voltage
Axis Title
Axis Title
0.08
10000
80
0.06
10000
100
TJ = 125 °C
0.02
1000
1st line
2nd line
0.04
2nd line
P - Power (W)
60
1000
1st line
2nd line
2nd line
RS1S2(on) - On-Resistance (Ω)
1st line
2nd line
1000
2nd line
VGS(th) - (V)
TJ = 150 °C
10
10000
1.8
1st line
2nd line
2nd line
IFS1S2 - Source Current (A)
100
40
100
20
TJ = 25 °C
10
0
0
2
4
6
8
10
0
0.001
0.01
0.1
1
10
100
10
1000
VGS - Gate-to-Source Voltage (V)
t - Time (s)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
S18-1210-Rev. A, 10-Dec-2018
Document Number: 76915
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSF20DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
1000
10000
Limited by RS1S2(on)
a
IS1S2M limited
100
2nd line
IS1S2 - Source Current (A)
IS1S2(ON) limited
1000
1st line
2nd line
100 μs
10
1 ms
1
10 ms
100
100 ms
0.1
TA = 25 °C,
single pulse
1s
10 s
DC
BVS1S2 limited
0.01
0.1
1
10
10
100
VS1S2 - Source-to-Source Voltage (V)
Safe Operating Area, Junction-to-Ambient
Axis Title
Axis Title
10000
60
50
30
100
20
1000
60
1st line
2nd line
1000
40
2nd line
P - Power (W)
80
1st line
2nd line
2nd line
R S1S2 - Source Current (A)
10000
100
40
100
20
10
10
0
0
25
50
75
100
125
TC - Case Temperature (°C)
Current Derating
b
150
10
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Power, Junction-to-Case
Notes
a. VGS > minimum VGS at which RDS(on) is specified
b. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S18-1210-Rev. A, 10-Dec-2018
Document Number: 76915
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSF20DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
1
10000
0.2
Notes
0.1
PDM
1000
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Duty cycle = 0.5
0.1
t1
0.05
t2
t1
1. Duty cycle, D = t
2
2. Per unit base = RthJA = 63 °C/W
0.02
3. TJM - TA = PDMZthJA
(t)
4. Surface mounted
Single pulse
0.01
0.0001
100
0.001
0.01
0.1
1
10
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
10000
Duty cycle = 0.5
1000
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
1
0.2
0.1
100
0.05
0.02
Single pulse
0.1
0.0001
10
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?76915.
S18-1210-Rev. A, 10-Dec-2018
Document Number: 76915
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® 1212-8S CD with Flip Chip
C
D
A
H
A
Pin 1 dot
B
7
2
6
3
5
4
e
2x
b
1
(8)
0.1 M C A B
0.05 M C
8
K1
E1
E
E
c
Nxb
E1
A1
0.1 C
0.05 C
0.1 C
2x
H
0.1 C
H
D1
K
L
D
Backside view
DIM.
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.70
0.75
0.80
0.027
0.029
0.031
A1
0
0.02
0.05
0
0.001
0.002
b
0.27
0.32
0.37
0.011
0.013
0.015
c
-
0.20 ref.
-
-
0.008 ref.
-
D
3.20
3.30
3.40
0.126
0.130
0.134
D1
1.76
1.86
1.96
0.069
0.073
0.077
E
3.20
3.30
3.40
0.126
0.130
0.134
E1
1.18
1.28
1.38
0.046
0.050
0.054
e
0.60
0.65
0.70
0.024
0.026
0.028
K
0.50 typ.
0.020 typ.
K1
0.35 typ.
0.014 typ.
H
0.10
0.20
0.30
0.006
0.008
0.010
L
0.84
0.94
1.04
0.033
0.037
0.041
ECN: C17-1732-Rev. A, 18-Dec-17
DWG: 6061
Revision: 18-Dec-17
Document Number: 76263
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
www.vishay.com
Vishay Siliconix
Recommended Land Pattern
PowerPAK® 1212-8S CD
1
8
2
7
3
6
4
5
3.90
3.30
0.40 0.30
1.29
1.46
0.45
8
2
7
3
6
4
5
3.30
0.20
0.32
2.37
2.35
0.65
0.42
1
0.65
0.40
0.48
0.47
0.30
Revision: 05-Jan-2021
Document Number: 63021
1
For technical questions, contact: powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
www.vishay.com
Vishay Siliconix
Recommended Minimum PADs for PowerPAIR® 6 x 5F
7
0.4
1.69
0.5
1.98
0.595
1.05
0.5
8
1.27
0.4
1
4
5
0.27
6
0.5
2.81
0.4
0.97
1.27 x 2 =2.54
0.6464
4.46
0.6464
1.27 x 3 =3 .81
7
3
0.595
5
2
0.595
0.5
0.4
0.27
0.595
0.98
Component for PowerPair 6 x 5F
Land Pattern for PowerPair 6 x 5F
Note
• Dimensions in millimeters
Revision: 12-Feb-18
Document Number: 76480
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 09-Jul-2021
1
Document Number: 91000
