SISH101DN-T1-GE3

SiSH101DN www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PowerPAK® 1212-8SH • TrenchFET® power MOSFET D D 8 D 7 D 6 5 • 100 % Rg and UIS tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 0.9 mm 3.3 mm 1 3.3 1 2 S 3 S 4 S G mm Top View Bottom View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -10 V RDS(on) max. () at VGS = -4.5 V Qg typ. (nC) ID (A) Configuration S APPLICATIONS • Notebook adapter switch • Notebook battery management G • Load switch -30 0.0072 0.0130 32 -35 d Single D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK 1212-8 SiSH101DN-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 300 μs) SYMBOL LIMIT VDS VGS -30 ± 25 -35 d -35 d -16.9 a, b -13.6 a, b -80 -35 d -3a, b -20 20 52 33 3.7 a, b 2.4 a, b -55 to +150 260 ID IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS Avalanche current Single-pulse avalanche energy L = 0.1 mH IAS EAS Maximum power dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Operating junction and storage temperature range Soldering recommendations (peak temperature) e, f TJ, Tstg UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT t  10 s RthJA 26 33 Maximum junction-to-ambient a, c °C/W Maximum junction-to-case Steady state RthJC 1.9 2.4 Notes a. Surface mounted on 1" x 1" FR4 board b. t = 10 s c. Maximum under steady state conditions is 81 °C/W d. Package limited e. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S18-1175-Rev. A, 26-Nov-2018 Document Number: 77305 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSH101DN www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = -250 μA -30 - - V - -22 - - 5.1 - Static Drain-source breakdown voltage VDS/TJ VDS temperature coefficient ID = -250 μA mV/°C VGS(th) temperature coefficient VGS(th)/TJ Gate-source threshold voltage VGS(th) VDS = VGS, ID = -250 μA -1.2 - -2.5 V IGSS VDS = 0 V, VGS = ± 25 V - - ± 100 nA VDS = -30 V, VGS = 0 V - - -1 VDS = -30 V, VGS = 0 V, TJ = 55 °C - - -5 VDS  -10 V, VGS = -10 V -30 - - A VGS = -10 V, ID = -15 A - 0.0058 0.0072 VGS = -4.5 V, ID = -10 A - 0.0100 0.0130  VDS = -0 V, ID = -15 A - 44 - - 3595 - VDS = -15 V, VGS = 0 V, f = 1 MHz - 442 - - 408 - - 68 102 - 32 48 VDS = -15 V, VGS = -4.5 V, ID = -10 A - 9 - - 12.2 - f = 1 MHz 0.4 1.8 3.6 - 12 24 - 10 20 - 38 75 tf - 8 16 td(on) - 52 100 - 82 150 - 38 75 - 15 30 Gate-source leakage Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs μA S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = -15 V, VGS = -10 V, ID = -10 A td(on) tr td(off) tr td(off) VDD = -15 V, RL = 1.5  ID  -10 A, VGEN = -10 V, Rg = 1  VDD = -15 V, RL = 1.5  ID  -10 A, VGEN = -4.5 V, Rg = 1  tf pF nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C - - -35 - - -80 IS = -3 A, VGS = 0 V - -0.76 -1.2 - 21 40 ns IF = -10 A, di/dt = 100 A/μs, TJ = 25 °C - 10 20 nC - 9 - - 12 - A V ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing   Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S18-1175-Rev. A, 26-Nov-2018 Document Number: 77305 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSH101DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 80 80 VGS = 10 V thru 5 V 64 ID - Drain Current (A) ID - Drain Current (A) 64 VGS = 4 V 48 32 16 48 TC = 25 °C 32 16 VGS = 3 V TC = 125 °C VGS = 2 V 0 T = - 55 °C 0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 1.0 2.0 3.0 4.0 5.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.0200 5000 0.0160 4000 6.0 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Ciss VGS = 4.5 V 0.0120 0.0080 3000 2000 Coss 0.0040 1000 VGS = 10 V Crss 0.0000 0 0 16 32 48 64 80 0 4 8 16 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Drain Current 1.6 10 RDS(on) - On-Resistance (Normalized) ID = 10 A VGS - Gate-to-Source Voltage (V) 12 8 VDS = 15 V 6 VDS = 10 V 4 VDS = 20 V 2 VGS = 10 V ID = 15 A 1.4 1.2 VGS = 4.5 V 1.0 0.8 0.6 0 0 14 28 42 Qg - Total Gate Charge (nC) Gate Charge S18-1175-Rev. A, 26-Nov-2018 56 70 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 77305 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSH101DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.050 ID = 15 A 0.040 TJ = 150 °C RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 TJ = 25 °C 1 0.1 0.01 0.030 0.020 TJ = 125 °C 0.010 TJ = 25 °C 0.001 0.000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.8 100 0.6 80 ID = 250 μA 0.4 0.2 Power (W) VGS(th) - Variance (V) 2 ID = 1 mA 60 40 0 20 - 0.2 - 0.4 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) 0.1 1 10 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 IDM Limited 100 μs ID - Drain Current (A) 10 ID Limited 1 ms 10 ms 1 Limited by RDS(on)* 100 ms 1s 10 s 0.1 TA = 25 °C Single Pulse 0.01 0.01 DC BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area S18-1175-Rev. A, 26-Nov-2018 Document Number: 77305 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSH101DN www.vishay.com Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 70 ID - Drain Current (A) 56 42 28 Limited by Package 14 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 65 2.0 52 1.6 39 1.2 Power (W) Power (W) Current Derating a 26 13 0.8 0.4 0 0.0 0 25 50 75 100 125 TC - Case Temperature (°C) Power, Junction-to-Case 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power, Junction-to-Ambient Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S18-1175-Rev. A, 26-Nov-2018 Document Number: 77305 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSH101DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 81 °C/W 3. T JM - T A = PDMZthJA(t) Single Pulse 0.01 0.0001 0.001 4. Surface Mounted 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case                     Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77305. S18-1175-Rev. A, 26-Nov-2018 Document Number: 77305 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix Case Outline for PowerPAK® 1212-SWLH and PowerPAK® 1212-8SH A 0.10 C Z D 8 7 6 5 1 2 3 4 D1 5 6 b 4 3 7 8 2 1 K E E1 K1 2x L B 0.10 C 2x e 0.10 M C A B 0.05 M C Pin 1 dot 0.10 C A C 0.08 C A1 A3 DIM. MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.82 0.90 0.98 0.032 0.035 0.038 A1 0.00 - 0.05 0.000 - 0.002 A3 0.20 ref. 0.008 ref. b 0.25 0.30 0.35 0.010 0.012 0.014 D 3.20 3.30 3.40 0.126 0.130 0.134 D1 2.15 2.25 2.35 0.085 0.089 0.093 E 3.20 3.30 3.40 0.126 0.130 0.134 E1 1.60 1.70 1.80 0.063 0.067 0.071 e 0.65 bsc. K 0.76 ref. 0.030 ref. K1 0.41 ref. 0.016 ref. L 0.33 Z 0.43 0.525 ref. 0.026 bsc. 0.53 0.013 0.017 0.021 0.021 ref. ECN: S20-0930-Rev. C, 07-Dec-2020 DWG: 6062 Revision: 07-Dec-2020 Document Number: 76384 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single 0.152 (3.860) 0.039 0.068 (0.990) (1.725) 0.010 (0.255) (2.390) 0.094 0.088 (2.235) 0.016 (0.405) 0.026 (0.660) 0.025 0.030 (0.635) (0.760) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72597 Revision: 21-Jan-08 www.vishay.com 7 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000