SiSH110DN
www.vishay.com
Vishay Siliconix
N-Channel 20 V (D-S) Fast Switching MOSFET
FEATURES
PowerPAK® 1212-8SH
• TrenchFET® Gen II power MOSFET
D
D
8
D
7
D
6
5
• PWM optimized
• 100 % Rg tested
0.9 mm
3.3
mm
1
3.3
1
2
S
3
S
4
S
G
mm
Top View
APPLICATIONS
D
• Synchronous rectification
Bottom View
• Synchronous buck
PRODUCT SUMMARY
VDS (V)
20
RDS(on) max. () at VGS = 10 V
0.0053
RDS(on) max. () at VGS = 4.5 V
0.0078
Qg typ. (nC)
G
14
ID (A)
Configuration
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
S
21.1
N-Channel MOSFET
Single
ORDERING INFORMATION
Package
PowerPAK 1212-8
Lead (Pb)-free and halogen-free
SiSH110DN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
STEADY
STATE
10 s
Drain-source voltage
VDS
20
20
Gate-source voltage
VGS
± 20
± 20
Continuous drain current (TJ = 150 °C) a
TA = 25 °C
TA = 70 °C
Pulsed drain current
Continuous source current (diode conduction) a
Single avalanche current
Single avalanche energy
Maximum power dissipation a
L = 0 1 mH
TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
ID
21.1
13.5
16.9
10.8
IDM
60
60
IS
3.2
1.3
IAS
35
35
EAS
61
61
3.8
1.5
2
0.8
PD
TJ, Tstg
-55 to +150
Soldering recommendations (peak temperature) b, c
UNIT
V
A
mJ
W
°C
260
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient a
Maximum junction-to-case (drain)
SYMBOL
t 10 s
Steady state
Steady state
RthJA
RthJC
TYPICAL
MAXIMUM
24
33
65
81
1.9
2.4
UNIT
°C/W
Notes
a. Surface mounted on 1" x 1" FR4 board
b. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8SH is a leadless package within the PowerPAK 1212-8 package
family. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at
the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
S18-0694-Rev. A, 09-Jul-2018
Document Number: 79230
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSH110DN
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Gate threshold voltage
VGS(th)
VDS = VGS, ID = 250 μA
1.5
-
2.5
V
Gate-body leakage
IGSS
VDS = 0 V, VGS = ±20 V
-
-
± 100
nA
Zero gate voltage drain current
IDSS
On-state drain current a
ID(on)
Drain-source on-state resistance a
Forward transconductance a
Diode forward
voltage a
VDS = 20 V, VGS = 0 V
-
-
1
VDS = 20 V, VGS = 0 V, TJ = 55 °C
-
-
5
μA
VDS 5 V, VGS = 10 V
40
-
-
A
VGS = 10 V, ID = 21.1 A
-
0.0044
0.0053
VGS = 4.5 V, ID = 17.4 A
-
0.0064
0.0078
gfs
VDS = 15 V, ID = 21.1 A
-
71
-
S
VSD
IS = 3.2 A, VGS = 0 V
-
0.8
1.2
V
-
14
21
VDS = 10 V, VGS = 4.5 V, ID = 21.1 A
-
7
-
-
4.5
-
0.7
1.4
2.1
-
12
20
-
10
15
RDS(on)
Dynamic b
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Rg
f = 1 MHz
td(on)
tr
td(off)
VDD = 10 V, RL = 10
ID 1 A, VGEN = 10 V, Rg = 6
-
36
55
tf
-
10
15
Body diode reverse recovery time
trr
-
30
60
Body diode reverse recovery charge
Qrr
-
25
50
Reverse recovery fall time
ta
-
14
-
Reverse recovery rise time
tb
-
16
-
IF = 3.2 A, di/dt = 100 A/μs
nC
ns
nC
ns
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S18-0694-Rev. A, 09-Jul-2018
Document Number: 79230
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSH110DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
60
60
VGS = 10 thru 4 V
48
I D - Drain Current (A)
I D - Drain Current (A)
48
36
24
12
36
24
TC = 125 °C
12
25 °C
3V
0
0.0
0.5
1.0
1.5
2.0
2.5
- 55 °C
0
0.0
3.0
0.5
VDS - Drain-to-Source Voltage (V)
1.0
1.5
2.0
2.5
3.0
VGS - Gate-to-Source Voltage (V)
3.5
4.0
Transfer Characteristics
Output Characteristics
0.010
2500
0.008
2000
C - Capacitance (pF)
Ciss
VGS = 4.5 V
0.006
VGS = 10 V
R DS(on)
0.004
0.002
1500
1000
Coss
500
0.000
Crss
0
0
10
20
30
40
ID - Drain Current (A)
50
4
0
60
8
16
20
Capacitance
On-Resistance vs. Drain Current
10
1.6
VDS = 10 V
ID = 21.1 A
8
R DS(on) - On-Resistance (Normalized)
V GS - Gate-to-Source Voltage (V)
12
VDS - Drain-to-Source Voltage (V)
6
4
2
0
0
5
10
15
20
25
30
VGS = 10 V
ID = 21.1 A
1.4
1.2
1.0
0.8
0.6
- 50
Qg - Total Gate Charge (nC)
0
25
50
75
100
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S18-0694-Rev. A, 09-Jul-2018
- 25
125
150
Document Number: 79230
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSH110DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.024
60
ID = 5 A
ID = 21.1 A
TJ = 150 °C
0.016
10
0.012
R DS(on)
I S - Source Current (A)
0.020
TJ = 25 °C
0.008
0.004
1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
0
1.2
Source-Drain Diode Forward Voltage
2
4
6
8
VGS - Gate-to-Source Voltage (V)
10
On-Resistance vs. Gate-to-Source Voltage
0.4
50
ID = 250 µA
0.2
0.0
Power (W)
V GS(th) Variance (V)
40
- 0.2
- 0.4
30
20
- 0.6
10
- 0.8
- 1.0
- 50
- 25
0
25
50
75
100
TJ - Temperature (°C)
125
0
0.01
150
10
1
100
600
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
IDM Limited
P(t) = 0.0001
Limited by
RDS(on)*
10
I D - Drain Current (A)
0.1
P(t) = 0.001
P(t) = 0.01
1
ID(on)
Limited
P(t) = 0.1
P(t) = 1
P(t) = 10
0.1
TA = 25 °C
Single Pulse
DC
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum V GS at which R DS(on) is specified
Safe Operating Area
S18-0694-Rev. A, 09-Jul-2018
Document Number: 79230
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSH110DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 65 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?79230.
S18-0694-Rev. A, 09-Jul-2018
Document Number: 79230
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
Case Outline for PowerPAK® 1212-SWLH
and PowerPAK® 1212-8SH
A
0.10 C
Z
D
8
7
6
5
1
2
3
4
D1
5
6
b
4
3
7
8
2
1
K
E
E1
K1
2x
L
B
0.10 C
2x
e
0.10 M C A B
0.05 M C
Pin 1 dot
0.10 C
A
C
0.08 C
A1 A3
DIM.
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.82
0.90
0.98
0.032
0.035
0.038
A1
0.00
-
0.05
0.000
-
0.002
A3
0.20 ref.
0.008 ref.
b
0.25
0.30
0.35
0.010
0.012
0.014
D
3.20
3.30
3.40
0.126
0.130
0.134
D1
2.15
2.25
2.35
0.085
0.089
0.093
E
3.20
3.30
3.40
0.126
0.130
0.134
E1
1.60
1.70
1.80
0.063
0.067
0.071
e
0.65 bsc.
K
0.76 ref.
0.030 ref.
K1
0.41 ref.
0.016 ref.
L
0.33
Z
0.43
0.525 ref.
0.026 bsc.
0.53
0.013
0.017
0.021
0.021 ref.
ECN: S20-0930-Rev. C, 07-Dec-2020
DWG: 6062
Revision: 07-Dec-2020
Document Number: 76384
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single
0.152
(3.860)
0.039
0.068
(0.990)
(1.725)
0.010
(0.255)
(2.390)
0.094
0.088
(2.235)
0.016
(0.405)
0.026
(0.660)
0.025
0.030
(0.635)
(0.760)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72597
Revision: 21-Jan-08
www.vishay.com
7
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
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liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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Revision: 09-Jul-2021
1
Document Number: 91000
