SiSH116DN
www.vishay.com
Vishay Siliconix
N-Channel 40 V (D-S) Fast Switching MOSFET
FEATURES
PowerPAK® 1212-8SH
• TrenchFET® power MOSFET
D
D
8
D
7
D
6
5
• PWM optimized
• 100 % Rg tested
0.9 mm
3.3
mm
1
3.3
1
2
S
3
S
4
S
G
mm
Top View
APPLICATIONS
D
• Synchronous rectification
Bottom View
• Intermediate switch
PRODUCT SUMMARY
VDS (V)
• Synchronous buck
40
RDS(on) max. () at VGS = 10 V
0.0078
RDS(on) max. () at VGS = 4.5 V
0.0100
Qg typ. (nC)
ID (A)
Configuration
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
G
15
S
16.4
N-Channel MOSFET
Single
ORDERING INFORMATION
Package
PowerPAK 1212-8
Lead (Pb)-free and halogen-free
SiSH116DN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
STEADY
STATE
10 s
Drain-source voltage
VDS
40
40
Gate-source voltage
VGS
± 20
± 20
16.4
10.5
13.1
8.4
Continuous drain current (TJ = 150 °C) a
TA = 25 °C
TA = 70 °C
Pulsed drain current
Continuous source current (diode conduction) a
Avalanche current
Avalanche energy
Maximum power dissipation a
L = 0 1 mH
TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
ID
IDM
60
60
IS
3.2
1.3
IAS
15
15
EAS
11
11
3.8
1.5
2
0.8
PD
TJ, Tstg
-55 to +150
Soldering recommendations (peak temperature) b, c
UNIT
V
A
mJ
W
°C
260
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient a
Maximum junction-to-case (drain)
SYMBOL
t 10 s
Steady state
Steady state
RthJA
RthJC
TYPICAL
MAXIMUM
24
33
65
81
1.9
2.4
UNIT
°C/W
Notes
a. Surface mounted on 1" x 1" FR4 board
b. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8SH is a leadless package within the PowerPAK 1212-8 package
family. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at
the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
S18-0695-Rev. A, 16-Jul-2018
Document Number: 79240
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSH116DN
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Gate threshold voltage
VGS(th)
VDS = VGS, ID = 250 μA
1.5
-
2.5
V
Gate-body leakage
IGSS
VDS = 0 V, VGS = ±20 V
-
-
± 100
nA
Zero gate voltage drain current
IDSS
On-state drain current a
ID(on)
Drain-source on-state resistance a
Forward transconductance a
Diode forward
voltage a
VDS = 40 V, VGS = 0 V
-
-
1
VDS = 40 V, VGS = 0 V, TJ = 55 °C
-
-
5
μA
VDS 5 V, VGS = 10 V
40
-
-
A
VGS = 10 V, ID = 16.4 A
-
0.0065
0.0078
VGS = 4.5 V, ID = 14.5 A
-
0.0083
0.0100
gfs
VDS = 15 V, ID = 16.4 A
-
68
-
S
VSD
IS = 3.2 A, VGS = 0 V
-
0.8
1.2
V
-
15
23
VDS = 20 V, VGS = 4.5 V, ID = 16.4 A
-
6.7
-
-
5.1
-
0.7
1.4
2.1
-
10
15
-
10
15
-
36
55
-
10
15
-
30
60
-
26
52
RDS(on)
Dynamic b
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Rg
f = 1 MHz
td(on)
tr
td(off)
VDD = 20 V, RL = 20
ID 1 A, VGEN = 10 V, Rg = 6
tf
Source-drain reverse recovery time
trr
Body diode reverse recovery charge
Qrr
IF = 3.2 A, di/dt = 100 A/μs
nC
ns
nc
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S18-0695-Rev. A, 16-Jul-2018
Document Number: 79240
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSH116DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
60
60
VGS = 10 thru 4 V
50
I D - Drain Current (A)
I D - Drain Current (A)
50
40
30
20
40
30
20
TC = 125 °C
10
10
25 °C
3V
- 55 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
0
0.0
3.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
35
40
125
150
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Output Characteristics
0.012
2400
0.010
2000
Ciss
C - Capacitance (pF)
VGS = 4.5 V
0.008
VGS = 10 V
R DS(on)
0.006
0.004
1600
1200
800
Coss
0.002
400
0.000
Crss
0
0
10
20
30
40
ID - Drain Current (A)
50
60
0
5
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
Capacitance
On-Resistance vs. Drain Current
1.8
R DS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
10
VDS = 20 V
ID = 16.4 A
8
6
4
2
0
0
5
10
15
20
25
Qg - Total Gate Charge (nC)
Gate Charge
S18-0695-Rev. A, 16-Jul-2018
30
35
VGS = 10 V
ID = 16.4 A
1.6
1.4
1.2
1.0
0.8
0.6
- 50
- 25
0
25
50
75
100
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 79240
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSH116DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.020
60
ID = 16.4 A
TJ = 150 °C
0.012
10
0.008
RDS(on)
I S - Source Current (A)
0.016
TJ = 25 °C
1
0.0
0.004
0.000
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
0
1.2
Source-Drain Diode Forward Voltage
2
4
6
8
VGS - Gate-to-Source Voltage (V)
10
On-Resistance vs. Gate-to-Source Voltage
0.4
50
ID = 250 µA
0.2
Power (W)
V GS(th) Variance (V)
40
0.0
- 0.2
- 0.4
30
20
- 0.6
10
- 0.8
- 1.0
- 50
- 25
0
25
50
75
100
TJ - Temperature (°C)
125
0
0.01
150
0.1
10
1
100
600
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
IDM Limited
Limited by
RDS(on)*
P(t) = 0.0001
I D - Drain Current (A)
10
P(t) = 0.001
ID(on)
Limited
P(t) = 0.01
1
P(t) = 0.1
0.1
P(t) = 1
TA = 25 °C
Single Pulse
P(t) = 10
DC
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum V GS at which R DS(on) is specified
Safe Operating Area
S18-0695-Rev. A, 16-Jul-2018
Document Number: 79240
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSH116DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 65 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?79240.
S18-0695-Rev. A, 16-Jul-2018
Document Number: 79240
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
Case Outline for PowerPAK® 1212-SWLH
and PowerPAK® 1212-8SH
A
0.10 C
Z
D
8
7
6
5
1
2
3
4
D1
5
6
b
4
3
7
8
2
1
K
E
E1
K1
2x
L
B
0.10 C
2x
e
0.10 M C A B
0.05 M C
Pin 1 dot
0.10 C
A
C
0.08 C
A1 A3
DIM.
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.82
0.90
0.98
0.032
0.035
0.038
A1
0.00
-
0.05
0.000
-
0.002
A3
0.20 ref.
0.008 ref.
b
0.25
0.30
0.35
0.010
0.012
0.014
D
3.20
3.30
3.40
0.126
0.130
0.134
D1
2.15
2.25
2.35
0.085
0.089
0.093
E
3.20
3.30
3.40
0.126
0.130
0.134
E1
1.60
1.70
1.80
0.063
0.067
0.071
e
0.65 bsc.
K
0.76 ref.
0.030 ref.
K1
0.41 ref.
0.016 ref.
L
0.33
Z
0.43
0.525 ref.
0.026 bsc.
0.53
0.013
0.017
0.021
0.021 ref.
ECN: S20-0930-Rev. C, 07-Dec-2020
DWG: 6062
Revision: 07-Dec-2020
Document Number: 76384
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single
0.152
(3.860)
0.039
0.068
(0.990)
(1.725)
0.010
(0.255)
(2.390)
0.094
0.088
(2.235)
0.016
(0.405)
0.026
(0.660)
0.025
0.030
(0.635)
(0.760)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72597
Revision: 21-Jan-08
www.vishay.com
7
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 01-Jan-2023
1
Document Number: 91000