SiSH536DN
www.vishay.com
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES
PowerPAK® 1212-8SH
• TrenchFET® Gen V power MOSFET
• Very low RDS x Qg figure-of-merit (FOM)
• Enables higher power density with very low
RDS(on) and thermally enhanced compact
package
D
D
8
D
7
D
6
5
0.9 mm
3.3
mm
1
3.3
mm
Top View
• 100 % Rg and UIS tested
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
1
2
S
3
S
4
S
G
Bottom View
APPLICATIONS
PRODUCT SUMMARY
VDS (V)
RDS(on) max. (Ω) at VGS = 10 V
RDS(on) max. (Ω) at VGS = 4.5 V
Qg typ. (nC)
ID (A)
Configuration
•
•
•
•
•
30
0.00325
0.0046
7.6
67.4
Single
D
DC/DC converter
POL
Synchronous rectification
Battery management
Power and load switch
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK 1212-8SH
SiSH536DN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C)
SYMBOL
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed drain current (t = 100 μs)
ID
IDM
Continuous source-drain diode current
TC = 25 °C
TA = 25 °C
IS
Single pulse avalanche current
Single pulse avalanche energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
TC = 70 °C
Maximum power dissipation
TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature) c
PD
TJ, Tstg
LIMIT
30
+16 / -12
67.4
54
24.7 b, c
19.7 b, c
200
24.1
3.2 b, c
20
20
26.5
17
3.57 b, c
2.3 b, c
-55 to +150
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
Maximum junction-to-ambient b
t ≤ 10 s
RthJA
28
35
°C/W
Maximum junction-to-case (drain)
Steady state
RthJC
3.8
4.7
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 81 °C/W
g. TC = 25 °C
S20-0969-Rev. A, 21-Dec-2020
Document Number: 66834
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSH536DN
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
Static
Drain-source breakdown voltage
VDS
VGS = 0 V, ID = 1 mA
30
-
-
ΔVDS/TJ
ID = 10 mA
-
23
-
VGS(th) temperature coefficient
ΔVGS(th)/TJ
ID = 250 μA
-
-4.2
-
Gate-source threshold voltage
VGS(th)
VDS = VGS, ID = 250 μA
1
-
2.2
V
IGSS
VDS = 0 V, VGS = +16 / -12 V
-
-
100
nA
VDS = 24 V, VGS = 0 V
-
-
1
VDS = 24 V, VGS = 0 V, TJ = 70 °C
-
-
15
VDS ≥ 10 V, VGS = 10 V
40
-
-
VDS temperature coefficient
Gate-source leakage
Zero gate voltage drain current
IDSS
On-state drain current a
ID(on)
Drain-source on-state resistance a
Forward transconductance a
Dynamic
RDS(on)
gfs
VGS = 10 V, ID = 10 A
-
0.0027
0.00325
VGS = 4.5 V, ID = 10 A
-
0.0038
0.0046
VDS = 15 V, ID = 10 A
-
53
-
-
1150
-
-
392
-
-
27
-
mV/°C
μA
A
Ω
S
b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
Gate-source charge
Qgs
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 10 A
VDS = 15 V, VGS = 4.5 V, ID =10 A
-
16.6
25
-
7.6
11.5
-
3.7
-
Gate-drain charge
Qgd
-
1.4
-
Output charge
Qoss
VDS = 15 V, VGS = 0 V
-
10.7
-
Rg
f = 1 MHz
0.3
0.9
1.6
-
9
18
-
5
10
-
18
36
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
VDD = 15 V, RL = 1.5 Ω, ID ≅ 10 A,
VGEN = 10 V, Rg = 1 Ω
pF
nC
Ω
tf
-
5
10
td(on)
-
12
24
-
9
18
-
18
36
-
8
16
-
-
24.1
-
-
200
-
0.76
1.1
V
-
21
42
ns
-
10
20
nC
-
10
-
-
11
-
tr
td(off)
VDD = 15 V, RL = 1.5 Ω, ID ≅ 10 A,
VGEN = 4.5 V, Rg = 1 Ω
tf
ns
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulse diode forward current
ISM
Body diode voltage
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
TC = 25 °C
IS = 5 A, VGS = 0 V
IF = 10 A, di/dt = 100 A/μs,
TJ = 25 °C
A
ns
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S20-0969-Rev. A, 21-Dec-2020
Document Number: 66834
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSH536DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
100
10000
120
VGS = 10 V thru 4 V
VGS = 3 V
40
100
1000
72
1st line
2nd line
1000
60
2nd line
ID - Drain Current (A)
96
1st line
2nd line
48
100
TC = 25 °C
24
20
TC = 125 °C
TC = -55 °C
VGS = 3 V
10
0
0
1
2
3
4
10
0
0
5
1
2
4
5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
Axis Title
Axis Title
10000
0.006
10000
10 000
Ciss
1000
VGS = 4.5 V
0.004
VGS = 10 V
0.003
100
2nd line
C - Capacitance (pF)
0.005
1st line
2nd line
2nd line
RDS(on) - On-Resistance
(Ω)
3
1000
1000
1st line
2nd line
2nd line
ID - Drain Current (A)
80
Coss
100
100
0.002
Crss
0
16
32
48
64
10
10
10
0.001
0
80
6
12
Axis Title
Axis Title
10000
VDS =10 V, 15 V, 20 V
100
2
10
0
6.8
10.2
13.6
17
1.4
VGS = 10 V, 10 A
1000
1.2
1st line
2nd line
1000
2nd line
RDS(on) - On-Resistance (Normalized)
ID = 10 A
8
6
10000
1.6
1st line
2nd line
2nd line
VGS - Gate-to-Source Voltage (V)
10
3.4
30
Capacitance
On-Resistance vs. Drain Current and Gate Voltage
0
24
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
4
18
1.0
100
VGS = 4.5 V, 10 A
0.8
10
0.6
-50
-25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S20-0969-Rev. A, 21-Dec-2020
Document Number: 66834
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSH536DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
0.3
10000
100
TJ = 150 °C
1
TJ = 25 °C
100
0.1
1000
-0.1
ID = 5 mA
-0.3
100
ID = 250 μA
-0.5
0.01
10
0
0.2
0.4
0.6
0.8
1.0
1st line
2nd line
2nd line
VGS(th) - Variance (V)
1000
1st line
2nd line
2nd line
IS - Source Current (A)
0.1
10
10
-0.7
1.2
-50
-25
0
25
50
75
100
VSD - Source-to-Drain Voltage (V)
TJ - Junction Temperature (°C)
Source-Drain Diode Forward Voltage
Threshold Voltage
Axis Title
125
150
Axis Title
10000
0.015
10000
500
400
100
0.003
1000
300
1st line
2nd line
TJ = 125 °C
0.006
2nd line
P - Power (W)
1000
0.009
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
ID = 15 A
0.012
200
100
100
TJ = 25 °C
10
0
0
2
4
6
8
0
0.0001
10
10
0.001
0.01
0.1
1
10
VGS - Gate-to-Source Voltage (V)
t - Time (s)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
10000
1000
IDM limited
ID limited
100 μs1000
10
Limited by RDS(on)
1st line
2nd line
2nd line
ID - Drain Current (A)
100
1 ms
a
10 ms
1
100 ms100
1s
0.1
10s
TA = 25 °C,
single pulse
0.01
0.01
BVDSS limited
DC
10
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
Safe Operating Area, Junction-to-Ambient
Note
a. VGS > minimum VGS at which RDS(on) is specified
S20-0969-Rev. A, 21-Dec-2020
Document Number: 66834
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSH536DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
10000
75
1000
45
1st line
2nd line
2nd line
ID - Drain Current (A)
60
30
100
15
10
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating a
Axis Title
Axis Title
10000
80
1.6
1st line
2nd line
32
100
16
1000
1.2
1st line
2nd line
1000
48
2nd line
P - Power (W)
64
2nd line
P - Power (W)
10000
2.0
0.8
100
0.4
10
0
0
25
50
75
100
125
150
10
0
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
150
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S20-0969-Rev. A, 21-Dec-2020
Document Number: 66834
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSH536DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
10000
Duty cycle = 0.5
Notes
0.2
0.1
0.1
1000
PDM
t1
t2
0.05
t1
t2
2. Per unit base = RthJA = 81 °C/W
1. Duty cycle, D =
0.02
3. TJM - TA = PDMZthJA
0.001
100
(t)
4. Surface mounted
Single pulse
0.01
0.0001
1st line
Normalized Effective Transient
Thermal Impedance
1
0.01
0.1
1
10
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
1
10000
0.2
1000
0.1
1st line
Normalized Effective Transient
Thermal Impedance
Duty cycle = 0.5
0.05
0.1
0.02
100
Single pulse
0.01
0.00001
10
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?66834.
S20-0969-Rev. A, 21-Dec-2020
Document Number: 66834
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
Case Outline for PowerPAK® 1212-SWLH
and PowerPAK® 1212-8SH
A
0.10 C
Z
D
8
7
6
5
1
2
3
4
D1
5
6
b
4
3
7
8
2
1
K
E
E1
K1
2x
L
B
0.10 C
2x
e
0.10 M C A B
0.05 M C
Pin 1 dot
0.10 C
A
C
0.08 C
A1 A3
DIM.
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.82
0.90
0.98
0.032
0.035
0.038
A1
0.00
-
0.05
0.000
-
0.002
A3
0.20 ref.
0.008 ref.
b
0.25
0.30
0.35
0.010
0.012
0.014
D
3.20
3.30
3.40
0.126
0.130
0.134
D1
2.15
2.25
2.35
0.085
0.089
0.093
E
3.20
3.30
3.40
0.126
0.130
0.134
E1
1.60
1.70
1.80
0.063
0.067
0.071
e
0.65 bsc.
K
0.76 ref.
0.030 ref.
K1
0.41 ref.
0.016 ref.
L
0.33
Z
0.43
0.525 ref.
0.026 bsc.
0.53
0.013
0.017
0.021
0.021 ref.
ECN: S20-0930-Rev. C, 07-Dec-2020
DWG: 6062
Revision: 07-Dec-2020
Document Number: 76384
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single
0.152
(3.860)
0.039
0.068
(0.990)
(1.725)
0.010
(0.255)
(2.390)
0.094
0.088
(2.235)
0.016
(0.405)
0.026
(0.660)
0.025
0.030
(0.635)
(0.760)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72597
Revision: 21-Jan-08
www.vishay.com
7
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Vishay
Disclaimer
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Revision: 09-Jul-2021
1
Document Number: 91000