SiSHA04DN
www.vishay.com
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES
PowerPAK® 1212-8SH
• TrenchFET ® Gen IV power MOSFET
D
D
8
D
7
D
6
5
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
0.9 mm
3.3
mm
1
1
2
S
3
S
4
S
G
mm
3.3
Top View
APPLICATIONS
Bottom View
• Personal computers and servers
PRODUCT SUMMARY
VDS (V)
RDS(on) max. (Ω) at VGS = 10 V
RDS(on) max. (Ω) at VGS = 4.5 V
Qg typ. (nC)
ID (A)
Configuration
D
• Switch mode power supplies
• Telecom bricks
G
• VRM’s and POL
30
0.00215
0.00310
22.5
40 g
Single
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK 1212-8SH
SiSHA04DN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
SYMBOL
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous drain current (TJ = 150 °C)
LIMIT
30
+20, -16
40 g
40 g
30.9 a, b
28.3 a, b
80
40 g
3.3 a, b
20
20
52
43
3.7 a, b
3.1 a, b
-55 to +150
260
ID
Pulsed drain current (t = 300 μs)
IDM
Continuous source-drain diode current
TC = 25 °C
TA = 25 °C
IS
Single pulse avalanche current
Single pulse avalanche energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
TC = 70 °C
Maximum power dissipation
TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature) c, d
PD
TJ, Tstg
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
Maximum junction-to-ambient a, e
t ≤ 10 s
RthJA
24
33
Maximum junction-to-case (drain)
Steady state
RthJC
1.9
2.4
UNIT
°C/W
Notes
a. Surface mounted on 1" x 1" FR4 board
b. t = 10 s
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
e. Maximum under steady state conditions is 81 °C/W
f. Based on TC = 25 °C
g. Package limited
S21-0899-Rev. B, 30-Aug-2021
Document Number: 76879
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSHA04DN
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 μA
30
-
-
-
V
14
-
-
-5.5
-
Static
Drain-source breakdown voltage
VDS temperature coefficient
ΔVDS/TJ
ID = 250 μA
mV/°C
VGS(th) temperature coefficient
ΔVGS(th)/TJ
Gate-source threshold voltage
VGS(th)
VDS = VGS , ID = 250 μA
1.1
-
2.2
V
IGSS
VDS = 0 V, VGS = +20 V, -16 V
-
-
±100
nA
VDS = 30 V, VGS = 0 V
-
-
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
-
-
10
VDS ≥ 5 V, VGS = 10 V
40
-
-
VGS = 10 V, ID = 15 A
-
0.00180
0.00215
VGS = 4.5 V, ID = 10 A
-
0.00250
0.00310
VDS = 15 V, ID = 15 A
-
105
Gate-source leakage
Zero gate voltage drain current
IDSS
On-state drain current a
ID(on)
Drain-source on-state resistance a
Forward transconductance a
RDS(on)
gfs
μA
A
Ω
S
Dynamic b
Input capacitance
Ciss
-
3595
Output capacitance
Coss
-
1040
-
Reverse transfer capacitance
Crss
-
79
0.044
VDS = 15 V, VGS = 0 V, f = 1 MHz
Crss/Ciss ratio
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Output charge
Qoss
Gate resistance
Rg
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDS = 15 V, VGS = 10 V, ID = 10 A
VDS = 15 V, VGS = 4.5 V, ID = 10 A
td(off)
-
0.022
-
51
77
-
22.5
34
-
8.6
-
-
4
-
VDS = 15 V, VGS = 0 V
-
30.5
-
f = 1 MHz
0.3
1.25
2.5
-
24
48
-
17
34
td(on)
tr
-
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
pF
nC
Ω
-
25
50
tf
-
10
20
td(on)
-
12
24
-
10
20
-
30
60
-
8
16
-
-
40
-
-
80
-
0.73
1.1
V
-
36
70
ns
-
24
48
nC
-
16
-
-
20
-
tr
td(off)
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
tf
ns
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulse diode forward current
ISM
Body diode voltage
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
TC = 25 °C
IS = 5 A, VGS = 0 V
IF = 10 A, di/dt = 100 A/μs,
TJ = 25 °C
A
ns
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S21-0899-Rev. B, 30-Aug-2021
Document Number: 76879
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSHA04DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
80
10000
10
VGS = 10 V thru 4 V
VGS = 3 V
32
100
16
1000
6
1st line
2nd line
1000
48
2nd line
ID - Drain Current (A)
8
1st line
2nd line
2nd line
ID - Drain Current (A)
64
4
100
TC = 25 °C
2
TC = -55 °C
TC = 125 °C
VGS = 2 V
10
0
0
0.5
1.0
1.5
2.0
10
0
2.5
0
1
2
3
4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
Axis Title
5
Axis Title
10000
0.0040
10000
4000
Ciss
1st line
2nd line
VGS = 4.5 V
0.0022
100
VGS = 10 V
0.0016
1000
2400
1st line
2nd line
1000
0.0028
2nd line
C - Capacitance (pF)
3200
2nd line
RDS(on) - On-Resistance (Ω)
0.0034
Coss
1600
100
800
Crss
10
0.0010
10
20
30
40
10
0
50
0
5
10
20
25
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
Axis Title
1000
1st line
2nd line
VDS = 10 V
VDS = 20 V
4
100
2
10
0
0
11
22
33
44
55
2nd line
RDS(on) - On-Resistance (Normalized)
8
VDS = 15 V
10000
1.7
ID = 10 A
6
30
Axis Title
10000
10
2nd line
VGS - Gate-to-Source Voltage (V)
15
ID = 15 A
1.5
VGS = 10 V
VGS = 4.5 V
1.1
100
0.9
10
0.7
-50
-25
0
25
50
75
100 125 150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S21-0899-Rev. B, 30-Aug-2021
1000
1.3
1st line
2nd line
0
Document Number: 76879
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSHA04DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
100
10000
0.015
ID = 15 A
1000
TJ = 25 °C
0.1
100
0.01
0.012
1000
0.009
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
TJ = 150 °C
1
1st line
2nd line
2nd line
IS - Source Current (A)
10
0.006
100
TJ = 125 °C
0.003
TJ = 25 °C
10
0.001
0
0.2
0.4
0.6
0.8
1.0
10
0
1.2
0
2
4
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
Axis Title
10000
0.4
10000
100
0.2
80
ID = 5 mA
100
-0.4
60
1st line
2nd line
-0.2
1000
2nd line
P - Power (W)
1000
0
1st line
2nd line
2nd line
VGS(th) - Variance (V)
6
40
100
ID = 250 μA
20
-0.6
10
-0.8
-50
-25
0
25
50
75
10
0
0.001
100 125 150
0.01
0.1
1
10
TJ - Junction Temperature (°C)
t - Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
100
10000
IDM limited
ID limited
1 ms
1000
10 ms
Limited by RDS(on) a
1st line
2nd line
2nd line
ID - Drain Current (A)
100 μs
10
1
100 ms
1s
10 s
0.1
100
DC
TC = 25 °C,
single pulse
0.01
0.01
BVDSS limited
10
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
Safe Operating Area, Junction-to-Ambient
Note
a. VGS > minimum VGS at which RDS(on) is specified
S21-0899-Rev. B, 30-Aug-2021
Document Number: 76879
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSHA04DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
10000
130
1000
78
1st line
2nd line
2nd line
ID - Drain Current (A)
104
52
Package limited
100
26
10
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating a
Axis Title
Axis Title
10000
65
1.6
1st line
2nd line
26
100
1000
1.2
1st line
2nd line
1000
39
2nd line
P - Power (W)
52
2nd line
P - Power (W)
10000
2.0
0.8
100
0.4
13
10
0
0
25
50
75
100
125
150
10
0
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
150
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S21-0899-Rev. B, 30-Aug-2021
Document Number: 76879
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSHA04DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
10000
Duty cycle = 0.5
Notes
1000
0.2
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
1
PDM
0.1
0.1
t1
t2
t1
1. Duty cycle, D = t
2
2. Per unit base = RthJA = 81 °C/W
0.05
0.02
3. TJM - TA = PDMZthJA
Single pulse
0.01
0.0001
0.001
0.01
100
(t)
4. Surface mounted
0.1
1
10
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
1
10000
0.2
1000
0.1
0.1
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Duty cycle = 0.5
0.05
0.02
Single pulse
100
0.01
0.0001
10
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?76879.
S21-0899-Rev. B, 30-Aug-2021
Document Number: 76879
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
Case Outline for PowerPAK® 1212-SWLH
and PowerPAK® 1212-8SH
A
0.10 C
Z
D
8
7
6
5
1
2
3
4
D1
5
6
b
4
3
7
8
2
1
K
E
E1
K1
2x
L
B
0.10 C
2x
e
0.10 M C A B
0.05 M C
Pin 1 dot
0.10 C
A
C
0.08 C
A1 A3
DIM.
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.82
0.90
0.98
0.032
0.035
0.038
A1
0.00
-
0.05
0.000
-
0.002
A3
0.20 ref.
0.008 ref.
b
0.25
0.30
0.35
0.010
0.012
0.014
D
3.20
3.30
3.40
0.126
0.130
0.134
D1
2.15
2.25
2.35
0.085
0.089
0.093
E
3.20
3.30
3.40
0.126
0.130
0.134
E1
1.60
1.70
1.80
0.063
0.067
0.071
e
0.65 bsc.
K
0.76 ref.
0.030 ref.
K1
0.41 ref.
0.016 ref.
L
0.33
Z
0.43
0.525 ref.
0.026 bsc.
0.53
0.013
0.017
0.021
0.021 ref.
ECN: S20-0930-Rev. C, 07-Dec-2020
DWG: 6062
Revision: 07-Dec-2020
Document Number: 76384
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 09-Jul-2021
1
Document Number: 91000
