SiSHA10DN
www.vishay.com
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES
PowerPAK® 1212-8SH
• TrenchFET® Gen IV power MOSFET
D
D
8
D
7
D
6
5
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
0.9 mm
3.3
mm
1
1
2
S
3
S
4
S
G
mm
3.3
Top View
Bottom View
D
• High power density DC/DC
• Synchronous rectification
PRODUCT SUMMARY
VDS (V)
RDS(on) max. (Ω) at VGS = 10 V
RDS(on) max. (Ω) at VGS = 4.5 V
Qg typ. (nC)
ID (A)
Configuration
APPLICATIONS
• VRMs and embedded DC/DC
G
30
0.0037
0.0050
15.4
30 a, g
Single
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK 1212-8SH
SiSHA10DN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C)
SYMBOL
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed drain current (t = 300 μs)
ID
IDM
Continuous source-drain diode current
TC = 25 °C
TA = 25 °C
IS
Single pulse avalanche current
Single pulse avalanche energy
L = 0.1 mH
IAS
EAS
Maximum power dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d, e
TJ, Tstg
LIMIT
30
+20, -16
30 g
30 g
25 b, c
20 b, c
80
30 g
3 b, c
20
20
39
25
3.6 b, c
2.4 b, c
-55 to +150
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
t ≤ 10 s
RthJA
26
34
Maximum junction-to-ambient b, f
°C/W
Maximum junction-to-case (drain)
Steady state
RthJC
2.4
3.2
Notes
a. Based on TC = 25 °C
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 81 °C/W
g. Package limited
S21-0899-Rev. B, 30-Aug-2021
Document Number: 76822
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSHA10DN
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 μA
30
-
-
V
-
17
-
-
-5
-
Static
Drain-source breakdown voltage
ΔVDS/TJ
VDS temperature coefficient
VGS(th) temperature coefficient
ΔVGS(th)/TJ
Gate-source threshold voltage
ID = 250 μA
mV/°C
VGS(th)
VDS = VGS, ID = 250 μA
1.1
-
2.2
V
Gate-source leakage
IGSS
VDS = 0 V, VGS = +20, -16 V
-
-
± 100
nA
Zero gate voltage drain current
IDSS
On-state drain current a
ID(on)
Drain-source on-state resistance a
Forward transconductance a
RDS(on)
gfs
VDS = 30 V, VGS = 0 V
-
-
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
-
-
10
VDS ≥ 5 V, VGS = 10 V
25
-
-
VGS = 10 V, ID = 10 A
-
0.0028
0.0037
VGS = 4.5 V, ID = 7 A
-
0.0041
0.0050
VDS = 10 V, ID = 10 A
-
52
-
μA
A
Ω
S
Dynamic b
Input capacitance
Ciss
-
2425
-
Output capacitance
Coss
-
730
-
Reverse transfer capacitance
Crss
-
65
-
-
0.027
0.054
VDS = 15 V, VGS = 0 V, f = 1 MHz
Crss/Ciss ratio
Total gate charge
Qg
VDS = 15 V, VGS = 10 V, ID = 10 A
VDS = 15 V, VGS = 4.5 V, ID = 10 A
-
34
51
-
15.4
23.1
-
5.8
-
-
2.6
-
Gate-source charge
Qgs
Gate-drain charge
Qgd
Output charge
Qoss
VDS = 15 V, VGS = 0 V
-
20
-
Gate resistance
Rg
f = 1 MHz
0.3
1.7
3.4
-
10
20
-
10
20
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
Turn-on delay time
Rise time
nC
Ω
-
27
50
-
10
20
td(on)
-
20
40
-
15
30
-
25
50
-
10
20
-
-
30
-
-
80
-
0.8
1.2
V
-
31
62
ns
-
19
40
nC
-
14
-
-
17
-
td(off)
Fall time
-
tf
tr
Turn-off delay time
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
pF
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
tf
ns
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
a
Body diode voltage
IS
TC = 25 °C
ISM
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
IS = 10 A
IF = 10 A, di/dt = 100 A/μs,
TJ = 25 °C
A
ns
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S21-0899-Rev. B, 30-Aug-2021
Document Number: 76822
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSHA10DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
80
10000
20
VGS = 10 V thru 4 V
70
30
100
VGS = 3 V
20
1000
12
1st line
2nd line
40
2nd line
ID - Drain Current (A)
1000
50
1st line
2nd line
2nd line
ID - Drain Current (A)
16
60
8
100
TC = 25 °C
4
TC = 125 °C
10
TC = -55 °C
10
0
0
0.5
1.0
1.5
10
0
2.0
0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
3.5
Axis Title
Axis Title
10000
0.0050
10000
3000
Ciss
2400
1000
1st line
2nd line
0.0040
0.0035
VGS = 10 V
0.0030
100
2nd line
C - Capacitance (pF)
VGS = 4.5 V
1000
1800
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
0.0045
Coss
1200
100
600
0.0025
Crss
10
20
30
40
50
60
70
0
80
5
10
25
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
Axis Title
1st line
2nd line
VDS = 15 V
VDS = 24 V
4
100
2
10
0
7
14
21
28
35
2nd line
RDS(on) - On-Resistance (Normalized)
1000
VDS = 7.5 V
10000
1.6
8
6
30
Axis Title
10000
ID = 10 A
2nd line
VGS - Gate-to-Source Voltage (V)
20
ID - Drain Current (A)
10
0
15
ID = 10 A
1.4
VGS = 10 V
1000
VGS = 4.5 V
1.2
1.0
100
0.8
10
0.6
-50
-25
0
25
50
75
100 125 150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S21-0899-Rev. B, 30-Aug-2021
1st line
2nd line
0
10
0
10
0.0020
Document Number: 76822
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSHA10DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
100
10000
0.010
1000
10
TJ = 25 °C
100
1
0.008
1000
0.006
TJ = 125 °C
0.004
TJ = 25 °C
0
0.2
0.4
0.6
0.8
1.0
100
0.002
10
0.1
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
TJ = 150 °C
1st line
2nd line
2nd line
IS - Source Current (A)
ID = 10 A
10
0
1.2
0
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
Axis Title
10000
2.1
80
10000
1.9
60
1.3
100
ID = 250 μA
1st line
2nd line
1st line
2nd line
2nd line
VGS(th) (V)
1.5
1000
2nd line
P - Power (W)
1000
1.7
40
100
20
1.1
10
0.9
-50
-25
0
25
50
75
0
0.001
100 125 150
0.01
0.1
1
10
100
10
1000
TJ - Junction Temperature (°C)
t - Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
10000
1000
Limited by RDS(on)
a
1000
10
100 μs
1
1 ms
10 ms
100 ms
1s
10 s
DC
0.1
TA = 25 °C
0.01
0.01
1st line
2nd line
2nd line
ID - Drain Current (A)
100
100
BVDSS limited
10
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
Safe Operating Area
Note
a. VGS > minimum VGS at which RDS(on) is specified
S21-0899-Rev. B, 30-Aug-2021
Document Number: 76822
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSHA10DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
40
10000
100
10000
40
Package limited
100
1000
1st line
2nd line
60
2nd line
P - Power (W)
30
1000
1st line
2nd line
2nd line
ID - Drain Current (A)
80
20
100
10
20
10
0
0
25
50
75
100
125
150
10
0
25
50
75
100
125
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating a
Power, Junction-to-Case
150
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S21-0899-Rev. B, 30-Aug-2021
Document Number: 76822
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSHA10DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
1
Duty cycle = 0.5
Notes
0.2
PDM
0.1
0.1
1000
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
10000
t1
0.05
t2
t1
1. Duty cycle, D = t
2
2. Per unit base = RthJA = 81 °C/W
0.02
3. TJM - TA = PDMZthJA
Single pulse
100
(t)
4. Surface mounted
0.01
0.0001
0.001
0.01
0.1
1
10
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
1
10000
0.2
1000
0.1
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Duty cycle = 0.5
0.05
0.1
0.02
Single pulse
0.01
0.0001
100
10
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?76822.
S21-0899-Rev. B, 30-Aug-2021
Document Number: 76822
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
Case Outline for PowerPAK® 1212-SWLH
and PowerPAK® 1212-8SH
A
0.10 C
Z
D
8
7
6
5
1
2
3
4
D1
5
6
b
4
3
7
8
2
1
K
E
E1
K1
2x
L
B
0.10 C
2x
e
0.10 M C A B
0.05 M C
Pin 1 dot
0.10 C
A
C
0.08 C
A1 A3
DIM.
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.82
0.90
0.98
0.032
0.035
0.038
A1
0.00
-
0.05
0.000
-
0.002
A3
0.20 ref.
0.008 ref.
b
0.25
0.30
0.35
0.010
0.012
0.014
D
3.20
3.30
3.40
0.126
0.130
0.134
D1
2.15
2.25
2.35
0.085
0.089
0.093
E
3.20
3.30
3.40
0.126
0.130
0.134
E1
1.60
1.70
1.80
0.063
0.067
0.071
e
0.65 bsc.
K
0.76 ref.
0.030 ref.
K1
0.41 ref.
0.016 ref.
L
0.33
Z
0.43
0.525 ref.
0.026 bsc.
0.53
0.013
0.017
0.021
0.021 ref.
ECN: S20-0930-Rev. C, 07-Dec-2020
DWG: 6062
Revision: 07-Dec-2020
Document Number: 76384
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single
0.152
(3.860)
0.039
0.068
(0.990)
(1.725)
0.010
(0.255)
(2.390)
0.094
0.088
(2.235)
0.016
(0.405)
0.026
(0.660)
0.025
0.030
(0.635)
(0.760)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72597
Revision: 21-Jan-08
www.vishay.com
7
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 09-Jul-2021
1
Document Number: 91000
