SiSHA14DN
www.vishay.com
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES
PowerPAK® 1212-8SH
• TrenchFET® Gen IV power MOSFET
D
D
8
D
7
D
6
5
0.9 mm
3.3
mm
1
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
1
2
S
3
S
4
S
G
mm
3.3
Top View
• 100 % Rg and UIS tested
APPLICATIONS
• DC/DC conversion
Bottom View
• Synchronous rectification
• Synchronous buck converter
PRODUCT SUMMARY
VDS (V)
RDS(on) max. (Ω) at VGS = 10 V
RDS(on) max. (Ω) at VGS = 4.5 V
Qg typ. (nC)
ID (A)
Configuration
D
G
• DC/AC inverter
30
0.00510
0.00850
9.4
20 f, g
Single
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK 1212-8SH
SiSHA14DN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C)
SYMBOL
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed drain current (t = 300 μs)
ID
IDM
Continuous source-drain diode current
TC = 25 °C
TA = 25 °C
IS
Single pulse avalanche current
Single pulse avalanche energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
TC = 70 °C
Maximum power dissipation
TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature) c, d
PD
TJ, Tstg
LIMIT
30
+20 / -16
20 g
20 g
19.7 a, b
10.4 a, b
80
20 g
3.2 a, b
15
11.25
26.5
17
3.57 a, b
2.3 a, b
-55 to +150
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
t ≤ 10 s
RthJA
28
35
Maximum junction-to-ambient a, e
°C/W
Maximum junction-to-case (drain)
Steady state
RthJC
3.8
4.7
Notes
a. Surface mounted on 1" x 1" FR4 board
b. t = 10 s
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
e. Maximum under steady state conditions is 81 °C/W
f. Based on TC = 25 °C
g. Package limited
S21-0899-Rev. B, 30-Aug-2021
Document Number: 75708
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSHA14DN
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 μA
30
-
-
-
V
20
-
-
-4.5
-
Static
Drain-source breakdown voltage
VDS temperature coefficient
ΔVDS/TJ
VGS(th) temperature coefficient
ΔVGS(th)/TJ
Gate-source threshold voltage
ID = 250 μA
mV/°C
VGS(th)
VDS = VGS, ID = 250 μA
1.1
-
2.2
V
Gate-source leakage
IGSS
VDS = 0 V, VGS = +20 V / -16 V
-
-
± 100
nA
Zero gate voltage drain current
IDSS
On-state drain current a
ID(on)
Drain-source on-state resistance a
Forward transconductance a
RDS(on)
gfs
VDS = 30 V, VGS = 0 V
-
-
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
-
-
10
VDS ≥ 5 V, VGS = 10 V
30
-
-
VGS = 10 V, ID = 10 A
-
0.00425
0.00510
VGS = 4.5 V, ID = 8 A
-
0.00680
0.00850
VDS = 10 V, VGS = 10 V
-
65
-
-
1450
-
-
445
-
μA
A
Ω
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 15 A
-
38
-
-
19.4
29
-
9.4
14
-
4
-
-
1.8
-
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Output charge
Qoss
VDS = 15 V, VGS = 0 V
-
12.5
-
Gate resistance
Rg
f = 1 MHz
0.4
1.65
3.3
-
9
18
-
8
16
-
18
36
tf
-
8
16
td(on)
-
15
30
-
12
24
-
18
36
-
9
18
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDS = 15 V, VGS = 0 V to 4.5 V, ID = 15 A
td(on)
tr
td(off)
tr
td(off)
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
tf
pF
nC
Ω
ns
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulse diode forward current
ISM
Body diode voltage
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
TC = 25 °C
IS = 5 A
IF = 10 A, di/dt = 100 A/μs,
TJ = 25 °C
-
-
14.1
-
-
80
-
0.76
1.1
V
-
24
48
ns
-
14
28
nC
-
12
-
-
12
-
A
ns
Notes
a. Guaranteed by design
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S21-0899-Rev. B, 30-Aug-2021
Document Number: 75708
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSHA14DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
80
10000
10
VGS = 10 V thru 4 V
8
100
VGS = 3 V
1000
6
1st line
2nd line
32
2nd line
ID - Drain Current (A)
1000
48
1st line
2nd line
2nd line
ID - Drain Current (A)
64
4
TC = 25 °C
100
2
16
TC = -55 °C
TC = 125 °C
VGS = 2 V
0
0.5
1.0
1.5
2.0
10
0
10
0
0
2.5
0.8
1.6
2.4
3.2
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
Axis Title
Axis Title
10000
0.0090
10000
1800
Ciss
1440
1000
1st line
2nd line
0.0066
0.0054
100
VGS = 10 V
2nd line
C - Capacitance (pF)
VGS = 4.5 V
0.0042
1000
1080
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
0.0078
4.0
Coss
720
100
360
Crss
10
0.0030
16
32
48
64
10
0
80
0
5
10
20
25
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
Axis Title
1000
1st line
2nd line
VDS = 10 V
VDS = 20 V
4
100
2
10
0
0
4
8
12
16
20
2nd line
RDS(on) - On-Resistance (Normalized)
8
VDS = 15 V
10000
1.7
ID = 10 A
6
30
Axis Title
10000
10
2nd line
VGS - Gate-to-Source Voltage (V)
15
ID = 10 A
1.5
VGS = 10 V
VGS = 4.5 V
1.1
100
0.9
10
0.7
-50
-25
0
25
50
75
100 125 150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S21-0899-Rev. B, 30-Aug-2021
1000
1.3
1st line
2nd line
0
Document Number: 75708
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSHA14DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
100
10000
0.025
ID = 10 A
1000
TJ = 25 °C
0.1
100
0.01
0.020
1000
0.015
0.010
0
0.2
0.4
0.6
0.8
1.0
TJ = 125 °C
0.005
10
0.001
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
TJ = 150 °C
1
1st line
2nd line
2nd line
IS - Source Current (A)
10
TJ = 25 °C
10
0
1.2
0
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
Axis Title
10000
0.5
10000
200
0.2
160
ID = 250 μA
-0.4
100
120
1st line
2nd line
ID = 5 mA
1000
2nd line
P - Power (W)
1000
-0.1
1st line
2nd line
2nd line
VGS(th) - Variance (V)
100
80
100
-0.7
40
10
-1.0
-50
-25
0
25
50
75
10
0
0.001
100 125 150
0.01
0.1
1
10
TJ - Junction Temperature (°C)
t - Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
100
10000
IDM limited
100 μs
10
1 ms
1
1000
1st line
2nd line
2nd line
ID - Drain Current (A)
ID limited
10 ms
Limited by RDS(on) a
100 ms
1s
100
10 s
0.1
DC
TC = 25 °C,
single pulse
0.01
0.01
BVDSS limited
10
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
Safe Operating Area, Junction-to-Ambient
Note
a. VGS > minimum VGS at which RDS(on) is specified
S21-0899-Rev. B, 30-Aug-2021
Document Number: 75708
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSHA14DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
10000
60
1000
40
1st line
2nd line
2nd line
ID - Drain Current (A)
50
30
Package limited
100
20
10
10
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating a
Axis Title
Axis Title
10000
35
1.6
1st line
2nd line
14
100
1000
1.2
1st line
2nd line
1000
21
2nd line
P - Power (W)
28
2nd line
P - Power (W)
10000
2.0
0.8
100
0.4
7
10
0
0
25
50
75
100
125
150
10
0
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
150
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S21-0899-Rev. B, 30-Aug-2021
Document Number: 75708
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSHA14DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
1
10000
0.2
Notes
0.1
PDM
0.1
1000
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Duty cycle = 0.5
t1
0.05
t2
t1
1. Duty cycle, D = t
2
2. Per unit base = RthJA = 81 °C/W
0.02
Single pulse
3. TJM - TA = PDMZthJA
100
(t)
4. Surface mounted
0.01
0.0001
0.001
0.01
0.1
1
10
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
1
10000
0.2
1000
0.1
0.1
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Duty cycle = 0.5
0.05
0.02
100
Single pulse
0.01
0.00001
10
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?75708.
S21-0899-Rev. B, 30-Aug-2021
Document Number: 75708
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
Case Outline for PowerPAK® 1212-SWLH
and PowerPAK® 1212-8SH
A
0.10 C
Z
D
8
7
6
5
1
2
3
4
D1
5
6
b
4
3
7
8
2
1
K
E
E1
K1
2x
L
B
0.10 C
2x
e
0.10 M C A B
0.05 M C
Pin 1 dot
0.10 C
A
C
0.08 C
A1 A3
DIM.
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.82
0.90
0.98
0.032
0.035
0.038
A1
0.00
-
0.05
0.000
-
0.002
A3
0.20 ref.
0.008 ref.
b
0.25
0.30
0.35
0.010
0.012
0.014
D
3.20
3.30
3.40
0.126
0.130
0.134
D1
2.15
2.25
2.35
0.085
0.089
0.093
E
3.20
3.30
3.40
0.126
0.130
0.134
E1
1.60
1.70
1.80
0.063
0.067
0.071
e
0.65 bsc.
K
0.76 ref.
0.030 ref.
K1
0.41 ref.
0.016 ref.
L
0.33
Z
0.43
0.525 ref.
0.026 bsc.
0.53
0.013
0.017
0.021
0.021 ref.
ECN: S20-0930-Rev. C, 07-Dec-2020
DWG: 6062
Revision: 07-Dec-2020
Document Number: 76384
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single
0.152
(3.860)
0.039
0.068
(0.990)
(1.725)
0.010
(0.255)
(2.390)
0.094
0.088
(2.235)
0.016
(0.405)
0.026
(0.660)
0.025
0.030
(0.635)
(0.760)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72597
Revision: 21-Jan-08
www.vishay.com
7
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 09-Jul-2021
1
Document Number: 91000
