SiSHA18ADN
www.vishay.com
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES
PowerPAK® 1212-8SH
• TrenchFET® Gen IV power MOSFET
D
D
8
D
7
D
6
5
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
0.9 mm
3.3
mm
1
1
2
S
3
S
4
S
G
mm
3.3
Top View
Bottom View
D
• High power density DC/DC
• Synchronous rectification
• VRMs and embedded DC/DC
PRODUCT SUMMARY
VDS (V)
RDS(on) max. () at VGS = 10 V
RDS(on) max. () at VGS = 4.5 V
Qg typ. (nC)
ID (A)
Configuration
APPLICATIONS
G
30
0.0046
0.007
9.8
60 a
Single
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK 1212-8SH
SiSHA18ADN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C)
SYMBOL
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed drain current (t = 300 μs)
ID
IDM
Continuous source-drain diode current
TC = 25 °C
TA = 25 °C
IS
Single pulse avalanche current
Single pulse avalanche energy
L = 0.1 mH
IAS
EAS
Maximum power dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d, e
TJ, Tstg
LIMIT
30
+20, -16
60
48
22 b, c
17.6 b, c
200
22
3 b, c
15
11.25
26.5
17
3.5 b, c
2.3 b, c
-55 to +150
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
t 10 s
RthJA
28
35
Maximum junction-to-ambient b, f
°C/W
Maximum junction-to-case (drain)
Steady state
RthJC
3.8
4.7
Notes
a. Based on TC = 25 °C
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 81 °C/W
S22-0345-Rev. A. 18-Apr-2022
Document Number: 62084
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSHA18ADN
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
Static
Drain-source breakdown voltage
VDS
VGS = 0 V, ID = 250 μA
30
-
-
VDS/TJ
ID = 10 mA
-
21
-
VGS(th) temperature coefficient
VGS(th)/TJ
ID = 250 μA
-
-4.6
-
Gate-source threshold voltage
VDS temperature coefficient
mV/°C
VGS(th)
VDS = VGS, ID = 250 μA
1
-
2.5
V
Gate-source leakage
IGSS
VDS = 0 V, VGS = +20, -16 V
-
-
± 100
nA
Zero gate voltage drain current
IDSS
Drain-source on-state resistance a
Forward transconductance a
RDS(on)
gfs
VDS = 30 V, VGS = 0 V
-
-
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
-
-
10
VGS = 10 V, ID = 10 A
-
0.0036
0.0046
VGS = 4.5 V, ID = 10 A
-
0.0049
0.007
VDS = 10 V, ID = 10 A
-
48
-
-
1650
-
VDS = 15 V, VGS = 0 V, f = 1 MHz
-
450
-
-
15.5
-
-
21.8
33
-
9.8
15
-
4.8
-
-
1.55
-
μA
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
VDS = 15 V, VGS = 10 V, ID = 10 A
VDS = 15 V, VGS = 4.5 V, ID = 10 A
Gate-source charge
Qgs
Gate-drain charge
Qgd
Output charge
Qoss
VDS = 15 V, VGS = 0 V
-
13.4
-
Gate resistance
Rg
f = 1 MHz
0.8
1.6
3
-
8
16
-
5
10
-
20
40
tf
-
5
10
td(on)
-
15
30
-
52
100
-
18
36
-
9
18
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
tr
td(off)
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 10 V, Rg = 1
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 4.5 V, Rg = 1
tf
pF
nC
ns
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulse diode forward current a
ISM
Body diode voltage
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
TC = 25 °C
-
-
22
-
-
200
IS = 10 A
-
0.74
1.2
-
21
42
ns
IF = 10 A, di/dt = 100 A/μs,
TJ = 25 °C
-
21
42
nC
-
10
-
-
11
-
A
V
ns
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S22-0345-Rev. A. 18-Apr-2022
Document Number: 62084
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSHA18ADN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
100
10000
120
VGS = 10 V thru 4 V
100
100
20
1000
80
1st line
2nd line
40
2nd line
ID - Drain Current (A)
1000
VGS = 3 V
60
1st line
2nd line
60
TC = 25 °C
40
20
100
TC = 125 °C
TC = -55 °C
VGS = 2 V
10
0
0
0.5
1.0
1.5
2.0
10
0
0
2.5
1
2
4
5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
Axis Title
Axis Title
10000
0.0060
0.0054
10000
10 000
Ciss
1000
0.0048
0.0042
100
VGS = 10 V
2nd line
C - Capacitance (pF)
VGS = 4.5 V
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
3
1000
1000
Coss
1st line
2nd line
2nd line
ID - Drain Current (A)
80
100
100
0.0036
Crss
0
20
40
60
80
10
10
10
0.0030
0
100
6
12
30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
Axis Title
Axis Title
10000
VDS = 10 V, 15 V, 20 V
4
100
2
10
0
5
10
15
20
25
1.4
VGS = 10 V, 10 A
1000
1.2
1st line
2nd line
1000
2nd line
RDS(on) - On-Resistance (Normalized)
ID = 10 A
8
6
10000
1.6
1st line
2nd line
2nd line
VGS - Gate-to-Source Voltage (V)
24
ID - Drain Current (A)
10
0
18
1.0
100
VGS = 4.5 V, 10 A
0.8
10
0.6
-50
-25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S22-0345-Rev. A. 18-Apr-2022
Document Number: 62084
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSHA18ADN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
0.02
10000
100
1000
TJ = 150 °C
1
TJ = 25 °C
100
0.1
1000
0.012
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
10
1st line
2nd line
2nd line
IS - Source Current (A)
ID = 10 A
0.016
TJ = 125 °C
0.008
100
0.004
TJ = 25 °C
0.01
10
0
0.2
0.4
0.6
0.8
1.0
10
0
1.2
0
2
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
Axis Title
10000
0.4
10000
500
0.2
400
ID = 5 mA
100
-0.4
300
200
100
ID = 250 μA
-0.6
100
10
-0.8
-50
-25
0
25
50
75
1st line
2nd line
-0.2
1000
2nd line
P - Power (W)
1000
0
1st line
2nd line
2nd line
VGS(th) - Variance (V)
4
100
125
0
0.0001
150
10
0.001
0.01
0.1
1
10
TJ - Junction Temperature (°C)
t - Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
10000
1000
IDM limited
ID limited
100 μs1000
10
1st line
2nd line
2nd line
ID - Drain Current (A)
100
1 ms
Limited by RDS(on)
a
10 ms
1
100 ms100
1s
0.1
10s
TA = 25 °C,
single pulse
0.01
0.01
BVDSS limited
DC
10
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
Safe Operating Area
Note
a. VGS > minimum VGS at which RDS(on) is specified
S22-0345-Rev. A. 18-Apr-2022
Document Number: 62084
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSHA18ADN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
70
28
1st line
2nd line
28
100
14
1000
21
1st line
2nd line
1000
42
2nd line
P - Power (W)
56
2nd line
ID - Drain Current (A)
10000
35
14
100
7
10
0
0
25
50
75
100
125
150
10
0
0
25
50
75
100
125
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating a
Power, Junction-to-Case
150
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S22-0345-Rev. A. 18-Apr-2022
Document Number: 62084
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSHA18ADN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
1
10000
Notes
0.2
0.1
0.1
1000
PDM
1st line
2nd line
Thermal Impedance
Duty cycle = 0.5
t1
t2
0.05
t1
t2
2. Per unit base = RthJA = 81 °C/W
1. Duty cycle, D =
0.02
3. TJM - TA = PDMZthJA
100
(t)
4. Surface mounted
Single pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
1
10000
Thermal Impedance
Duty cycle = 0.5
1st line
2nd line
1000
0.2
0.1
100
0.05
0.02
Single pulse
0.1
0.0001
10
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?76822.
S22-0345-Rev. A. 18-Apr-2022
Document Number: 62084
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
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Revision: 01-Jan-2023
1
Document Number: 91000
