SISS05DN-T1-GE3

SiSS05DN www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PowerPAK® 1212-8S D D D 7 8 D 6 5 • TrenchFET® Gen IV p-channel power MOSFET • Provides exceptionally low RDS(on) in a compact package that is thermally enhanced • Enables higher power density • 100 % Rg and UIS tested 3. 3 m m 1 m 3m 3. Top View 3 4 S G Bottom View 2 S 1 S • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Battery management in mobile devices PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) g Configuration S • Adapter and charger switch -30 0.0035 0.0058 37 -108 Single G • Circuit protection • Load switch D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK 1212-8S SiSS05DN-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) SYMBOL LIMIT VDS VGS -30 +16 / -20 -108 -86.6 -29.4 b, c -23.9 b, c -300 -59.7 -4.5 b, c -25 31.2 65.7 42 5 b, c 3.2 b, c -55 to +150 260 ID IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) c PD TJ, Tstg UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum junction-to-ambient b t  10 s RthJA 20 25 °C/W 1.5 1.9 Maximum junction-to-case (drain) Steady state RthJC Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 63 °C/W g. TC = 25 °C S19-0237-Rev. A, 18-Mar-2019 Document Number: 77029 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS05DN www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT V Static Drain-source breakdown voltage VDS VGS = 0 V, ID = -250 μA -30 - - VDS/TJ ID = -10 mA - -13 - VGS(th) temperature coefficient VGS(th)/TJ ID = -250 μA - 6.5 - Gate-source threshold voltage VDS temperature coefficient mV/°C VGS(th) VDS = VGS, ID = 250 μA -1 - -2.2 V Gate-source leakage IGSS VDS = 0 V, VGS = +16 / -20 V - - 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = -30 V, VGS = 0 V - - -1 VDS = -30 V, VGS = 0 V, TJ = 70 °C - - -15 VDS  -10 V, VGS = -10 V -40 - - A  VGS = -10 V, ID = -10 A - 0.00280 0.00350 VGS = -4.5 V, ID = -10 A - 0.00465 0.00580 VDS = -15 V, ID = -10 A - 53 - - 4930 - VDS = -15 V, VGS = 0 V, f = 1 MHz - 2100 - - 140 - μA S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = -15 V, VGS = -10 V, ID = -10 A - 76 115 - 37 56 VDS = -15 V, VGS = -4.5 V, ID =-10 A - 15.8 - - 12 - f = 1 MHz 1 3 5 - 16 32 - 15 30 td(on) tr td(off) VDD = -15 V, RL = 1.5 , ID  -10 A, VGEN = -10 V, Rg = 1  - 47 94 tf - 13 26 td(on) - 40 80 - 117 234 - 39 78 - 26 52 tr td(off) VDD = -15 V, RL = 1.5 , ID  -10 A, VGEN = -4.5 V, Rg = 1  tf pF nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = -5 A, VGS = 0 V IF = -10 A, di/dt = 100 A/μs, TJ = 25 °C - - -59.7 - - -300 A - -0.73 -1.1 V - 47 94 ns - 45 90 nC - 24 - - 23 - ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing  Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S19-0237-Rev. A, 18-Mar-2019 Document Number: 77029 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS05DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 100 80 40 100 20 0 0 0.5 1.0 1.5 2.0 TC = 25 °C 80 100 40 VGS = 3 V VGS = 2 V 1000 120 1st line 2nd line 1000 60 2nd line ID - Drain Current (A) 160 VGS = 10 V thru 4 V 1st line 2nd line 2nd line ID - Drain Current (A) 10000 200 TC = 125 °C TC = -55 °C 10 0 10 0 2.5 1.4 2.8 4.2 5.6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title 7 Axis Title 10000 0.010 10 000 10000 VGS = 4.5 V 0.004 100 0.002 1000 100 VGS = 10 V Crss 20 40 60 80 10 100 10 0.000 0 1000 Coss 1st line 2nd line 1000 0.006 2nd line C - Capacitance (pF) 0.008 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) Ciss 0 100 6 12 18 24 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 30 Axis Title 8 6 4 VDS = 10 V, 20 V, 30 V 2 1.4 VGS = 10 V, 10 A 1000 1.2 VGS = 4.5 V, 10 A 1.0 100 0.8 10 0.6 0 0 16 32 48 64 80 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S19-0237-Rev. A, 18-Mar-2019 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) ID = 10 A 2nd line VGS - Gate-to-Source Voltage (V) 10000 1.6 10 Document Number: 77029 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS05DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 1.0 10000 100 ID = 250 μA 2nd line VGS(th) - Variance (V) 1000 TJ = 25 °C TJ = 150 °C 1 100 0.1 1000 0.4 ID = 5 mA 0.1 100 -0.2 0.01 10 0 0.2 0.4 0.6 0.8 1.0 10 -0.5 1.2 -50 -25 0 25 50 75 100 125 150 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage Axis Title Axis Title 0.020 10000 500 10000 ID = 10 A 400 0.016 100 TJ = 125 °C 300 1st line 2nd line 0.008 1000 2nd line P - Power (W) 1000 0.012 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 1st line 2nd line 10 1st line 2nd line 2nd line IS - Source Current (A) 0.7 200 100 0.004 100 TJ = 25 °C 10 0 0 2 4 6 8 0 0.0001 10 10 0.001 0.01 0.1 1 10 VGS - Gate-to-Source Voltage (V) t - Time (s) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient Axis Title 10000 1000 IDM limited ID limited 1000 100 μs 10 1st line 2nd line 2nd line ID - Drain Current (A) 100 1 ms Limited by RDS(on) 1 10 ms a 100 ms100 1s 10s DC 0.1 TA = 25 °C, single pulse 0.01 0.01 BVDSS limited 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area, Junction-to-Ambient Note a. VGS > minimum VGS at which RDS(on) is specified S19-0237-Rev. A, 18-Mar-2019 Document Number: 77029 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS05DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 120 1000 72 1st line 2nd line 2nd line ID - Drain Current (A) 96 48 100 24 10 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating a Axis Title Axis Title 10000 80 2.0 1st line 2nd line 32 100 16 1000 1.5 1st line 2nd line 1000 48 2nd line P - Power (W) 64 2nd line P - Power (W) 10000 2.5 1.0 100 0.5 10 0 0 25 50 75 100 125 150 10 0 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S19-0237-Rev. A, 18-Mar-2019 Document Number: 77029 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS05DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 1 10000 0.2 Notes 0.1 0.1 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 PDM 0.05 t1 t2 t1 1. Duty cycle, D = t 2 2. Per unit base = RthJA = 63 °C/W 0.02 3. TJM - TA = PDMZthJA Single pulse 0.01 0.0001 0.001 100 (t) 4. Surface mounted 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 10000 Duty cycle = 0.5 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.2 0.1 100 0.05 0.02 Single pulse 0.1 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case                      Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77029. S19-0237-Rev. A, 18-Mar-2019 Document Number: 77029 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix Case Outline for PowerPAK® 1212-8S A 0.10 C 2x D 8 7 Z 6 5 D1 5 6 b 4 3 7 8 2 1 K1 E1 E K B L 0.10 C 1 2x 2 3 4 Pin 1 dot e 0.10 M C A B 0.05 M C 0.10 C C A A3 0.08 C A1 A MIN. 0.67 MILLIMETERS NOM. 0.75 MAX. 0.83 MIN. 0.026 INCHES NOM. 0.030 MAX. 0.033 A1 0.00 - 0.05 0.000 - 0.002 DIM. A3 0.20 ref. 0.008 ref b 0.25 0.30 0.35 0.010 0.012 D 3.20 3.30 3.40 0.126 0.130 0.134 D1 2.15 2.25 2.35 0.085 0.089 0.093 E 3.20 3.30 3.40 0.126 0.130 0.134 E1 1.60 1.70 1.80 0.063 0.067 0.071 e 0.65 bsc. 0.026 bsc. K 0.76 ref. 0.030 ref. K1 L 0.41 ref. 0.33 Z 0.43 0.525 ref. 0.014 0.016 ref. 0.53 0.013 0.017 0.021 0.021 ref. ECN: C20-0862-Rev. B, 20-Jul-2020 DWG: 6008 Revision: 20-Jul-2020 Document Number: 63919 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single 0.152 (3.860) 0.039 0.068 (0.990) (1.725) 0.010 (0.255) (2.390) 0.094 0.088 (2.235) 0.016 (0.405) 0.026 (0.660) 0.025 0.030 (0.635) (0.760) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72597 Revision: 21-Jan-08 www.vishay.com 7 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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