SISS10DN-T1-GE3

SiSS10DN www.vishay.com Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () (MAX.) ID (A) a, g 0.00265 at VGS = 10 V 60 0.00360 at VGS = 4.5 V 60 Qg (TYP.) 23 nC • TrenchFET® Gen IV power MOSFET • Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss • 100 % Rg and UIS tested PowerPAK® 1212-8S D D D 6 7 5 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D 8 APPLICATIONS D • Synchronous rectification • High power density DC/DC 3. 3 m m 1 m 3m 3. Top View 4 G Bottom View 2 S 3 S 1 S • VRMs and embedded DC/DC G • Synchronous buck converter • Load switching • Battery management S Ordering Information: SiSS10DN-T1-GE3 (lead (Pb)-free and halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 40 Gate-Source Voltage VGS +20, -16 TC = 70 °C TA = 25 °C 60 g ID 31.7 b, c 25 b, c TA = 70 °C Pulsed Drain Current (t = 100 μs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy IDM TC = 25 °C TA = 25 °C L = 0.1 mH TC = 70 °C TA = 25 °C 51.8 IS 4.3 b, c IAS 30 EAS 45 mJ 57 36 PD W 4.8 b, c 3 b, c TA = 70 °C Operating Junction and Storage Temperature Range A 150 TC = 25 °C Maximum Power Dissipation V 60 g TC = 25 °C Continuous Drain Current (TJ = 150 °C) UNIT TJ, Tstg -55 to +150 Soldering Recommendations (Peak Temperature) d, e °C 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM Maximum Junction-to-Ambient b, f t  10 s RthJA 21 26 Maximum Junction-to-Case (Drain) Steady State RthJC 1.7 2.2 UNIT °C/W Notes a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 70 °C/W. g. Package limited. S16-0219-Rev. A, 08-Feb-16 Document Number: 65439 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS10DN www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 40 - - V - 24 - - -5.5 - Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage ID = 250 μA mV/°C VGS(th) VDS = VGS, ID = 250 μA 1.1 - 2.4 V Gate-Source Leakage IGSS VDS = 0 V, VGS = +20 V, -16 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V - - 1 V= 40 V, VDS GS = 0 V, TJ = 55 °C - - 10 On-State Drain Current a ID(on) VDS  5 V, VGS = 10 V 30 - - VGS = 10 V, ID = 15 A - 0.00220 0.00265 VGS = 4.5 V, ID = 10 A - 0.00300 0.00360 VDS = 10 V, ID = 15 A - 70 Drain-Source On-State Resistance a Forward Transconductance a Dynamic RDS(on) gfs - μA A  S b Input Capacitance Ciss - 3750 - Output Capacitance Coss - 560 - Reverse Transfer Capacitance Crss - 72 - VDS = 20 V, VGS = 0 V, f = 1 MHz Crss/Ciss Ratio V = 20 V, VGS = 10 V, ID = 10 A - 0.019 0.038 - 50 75 - 23 35 - 10.3 - - 4.3 - Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Output Charge Qoss VDS = 20 V, VGS = 0 V - 37 - Rg f = 1 MHz 0.5 1.2 2.4 - 10 20 - 19 38 - 28 56 Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDS = 20 V, VGS = 4.5 V, ID = 10 A td(on) tr td(off) VDD = 20 V, RL = 2  ID  10 A, VGEN = 10 V, Rg = 1  tf - 7 14 td(on) - 22 44 - 52 100 tr td(off) VDD = 20 V, RL = 2  ID  10 A, VGEN = 4.5 V, Rg = 1  tf - 23 46 - 10 20 - - 51.8 - - 150 pF nC  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current (t = 100 μs) ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C IS = 5 A IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C A - 0.73 1.1 V - 38 76 ns - 33 66 nC - 20 - - 18 - ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-0219-Rev. A, 08-Feb-16 Document Number: 65439 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS10DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 150 150 10000 10000 VGS = 10 V thru 4 V 60 100 VGS = 3 V 30 1000 90 1st line 2nd line 1000 90 2nd line ID - Drain Current (A) 120 1st line 2nd line 2nd line ID - Drain Current (A) 120 TC = 25 °C 60 100 30 TC = -55 °C TC = 125 °C VGS = 2 V 0 0 10 0 0.5 1 1.5 2 2.5 10 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics Axis Title 5 Axis Title 0.005 4500 10000 10000 1000 0.003 0.002 100 VGS = 10 V 0.001 1000 2700 1st line 2nd line VGS = 4.5 V 2nd line C - Capacitance (pF) 3600 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) Ciss 0.004 1800 Coss 100 900 Crss 0 0 10 20 40 60 80 100 10 0 8 16 VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current Capacitance 2.0 ID = 10 A 8 VDS = 30V 1000 1st line 2nd line 6 VDS = 10V 4 100 2 0 10 11 22 33 44 55 2nd line RDS(on) - On-Resistance (Normalized) 10000 VDS = 20V 40 Axis Title Axis Title 2nd line VGS - Gate-to-Source Voltage (V) 32 ID - Drain Current (A) 2nd line 10 0 24 10000 ID = 15 A 1.7 VGS = 10 V 1000 1.4 VGS = 4.5 V 1.1 100 0.8 0.5 10 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature S16-0219-Rev. A, 08-Feb-16 1st line 2nd line 0 Document Number: 65439 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS10DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 0.01 10000 10000 1000 1 TJ = 25 °C 0.1 100 0.01 0.008 1000 0.006 1st line 2nd line TJ = 150 °C 1st line 2nd line 2nd line IS - Source Current (A) 2nd line RDS(on) - On-Resistance (Ω) ID = 15 A 10 TJ = 125 °C 0.004 100 0.002 TJ = 25 °C 0.001 0 10 0 0.2 0.4 0.6 0.8 1.0 1.2 10 0 2 4 8 10 VSD - Source-to-Drain Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 0.5 10000 10000 120 100 0.2 60 40 100 ID = 250 μA 1st line 2nd line 2nd line Power (W) ID = 5 mA -0.4 1000 80 1000 -0.1 1st line 2nd line 2nd line VGS(th) - Variance (V) 6 -0.7 100 20 -1.0 0 0.001 10 -50 -25 0 25 50 75 100 125 150 10 0.01 0.1 1 10 TJ - Temperature (°C) 2nd line Time (s) 2nd line Threshold Voltage Single Pulse Power, Junction-to-Ambient Axis Title 1000 10000 IDM limited ID limited 1000 100 μs 10 1 ms Limited by RDS(on) (1) 1 10 ms 1st line 2nd line 2nd line ID - Drain Current (A) 100 100 100 ms 1 Sec 10 Sec DC 0.1 Ta = 25 °C Single pulse 0.01 0.01 (1) 0.1 BVDSS limited 1 10 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area S16-0219-Rev. A, 08-Feb-16 Document Number: 65439 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS10DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 120 1000 80 1st line 2nd line 2nd line ID - Drain Current (A) 100 60 Package Limited 40 100 20 0 10 0 25 50 75 100 125 150 TC - Case Temperature (°C) 2nd line Current Derating a Axis Title Axis Title 70 10000 2.5 56 10000 2.0 1.5 1st line 2nd line 28 2nd line Power (W) 1000 1st line 2nd line 2nd line Power (W) 1000 42 1.0 100 14 100 0.5 0 10 0 25 50 75 100 125 150 0 10 0 25 50 75 100 125 TC - Case Temperature (°C) 2nd line TA - Ambient Temperature (°C) 2nd line Power, Junction-to-Case Power, Junction-to-Ambient 150 Note a. The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S16-0219-Rev. A, 08-Feb-16 Document Number: 65439 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS10DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 Duty Cycle = 0.5 Notes: 0.2 PDM 0.1 0.1 t1 0.05 t2 t 1. Duty cycle, D = t1 2 2. Per unit base = RthJA = 70 °C/W 0.02 3. TJM - TA = PDMZthJA Single pulse 0.01 0.0001 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.001 100 (t) 4. Surface mounted 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 10000 Duty Cycle = 0.5 1000 0.2 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.1 0.05 100 0.02 Single pulse 0.1 0.0001 10 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65439. S16-0219-Rev. A, 08-Feb-16 Document Number: 65439 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix Case Outline for PowerPAK® 1212-8S A 0.10 C 2x D 8 7 Z 6 5 D1 5 6 b 4 3 7 8 2 1 K1 E1 E K B L 0.10 C 1 2x 2 3 4 Pin 1 dot e 0.10 M C A B 0.05 M C 0.10 C C A A3 0.08 C A1 A MIN. 0.67 MILLIMETERS NOM. 0.75 MAX. 0.83 MIN. 0.026 INCHES NOM. 0.030 MAX. 0.033 A1 0.00 - 0.05 0.000 - 0.002 DIM. A3 0.20 ref. 0.008 ref b 0.25 0.30 0.35 0.010 0.012 D 3.20 3.30 3.40 0.126 0.130 0.134 D1 2.15 2.25 2.35 0.085 0.089 0.093 E 3.20 3.30 3.40 0.126 0.130 0.134 E1 1.60 1.70 1.80 0.063 0.067 0.071 e 0.65 bsc. 0.026 bsc. K 0.76 ref. 0.030 ref. K1 L 0.41 ref. 0.33 Z 0.43 0.525 ref. 0.014 0.016 ref. 0.53 0.013 0.017 0.021 0.021 ref. ECN: C20-0862-Rev. B, 20-Jul-2020 DWG: 6008 Revision: 20-Jul-2020 Document Number: 63919 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single 0.152 (3.860) 0.039 0.068 (0.990) (1.725) 0.010 (0.255) (2.390) 0.094 0.088 (2.235) 0.016 (0.405) 0.026 (0.660) 0.025 0.030 (0.635) (0.760) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72597 Revision: 21-Jan-08 www.vishay.com 7 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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