SISS46DN-T1-GE3

SiSS46DN www.vishay.com Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PowerPAK® 1212-8S D D D 7 8 D 6 5 • TrenchFET® Gen IV power MOSFET • Very low RDS - Qg figure-of-merit (FOM) • Tuned for the lowest RDS - Qoss FOM • 100 % Rg and UIS tested 3. 3 m m 1 3.3 mm Top View 3 4 S G Bottom View 2 S • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 S APPLICATIONS • Synchronous rectification PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 7.5 V Qg typ. (nC) ID (A) Configuration D • Primary side switch 100 0.0128 0.0146 21.5 45.3 Single • DC/DC converter G • Solar micro inverter • Motor drive switch S N-Channel MOSFET • Battery and load switch • Industrial ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK 1212-8S SiSS46DN-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) SYMBOL LIMIT VDS VGS 100 ± 20 45.3 36.2 12.5 b, c 10 b, c 100 59.7 4.5 b, c 20 20 65.7 42 5 b, c 3.2 b, c -55 to +150 260 ID IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) c PD TJ, Tstg UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT t  10 s RthJA 20 25 Maximum junction-to-ambient b °C/W Maximum junction-to-case (drain) Steady state RthJC 1.5 1.9 Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 63 °C/W g. TC = 25 °C S18-0728-Rev. A, 23-Jul-2018 Document Number: 77881 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS46DN www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT V Static Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 100 - - VDS/TJ ID = 10 mA - 57 - VGS(th) temperature coefficient VGS(th)/TJ ID = 250 μA - -7.1 - Gate-source threshold voltage VDS temperature coefficient mV/°C VGS(th) VDS = VGS, ID = 250 μA 2 - 3.4 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = 100 V, VGS = 0 V - - 1 VDS = 100 V, VGS = 0 V, TJ = 70 °C - - 15 VDS  10 V, VGS = 10 V 30 - - A  VGS = 10 V, ID = 10 A - 0.0106 0.0128 VGS = 7.5 V, ID = 10 A - 0.0112 0.0146 VDS = 15 V, ID = 10 A - 50 - - 2140 - - 161 - - 14 - - 28 42 - 21.5 33 - 8.8 - - 4.2 - μA S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Output charge Qoss VDS = 50 V, VGS = 0 V - 28.9 - Gate resistance Rg f = 1 MHz 0.3 0.85 1.5 - 12 26 - 6 12 - 21 42 Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = 50 V, VGS = 0 V, f = 1 MHz VDS = 50 V, VGS = 10 V, ID = 10 A VDS = 50 V, VGS = 6 V, ID =10 A td(on) tr td(off) VDD = 50 V, RL = 5 , ID  10 A, VGEN = 10 V, Rg = 1  tf - 6 12 td(on) - 15 30 - 7 14 - 19 38 - 7 14 tr td(off) VDD = 50 V, RL = 5 , ID  10 A, VGEN = 7.5 V, Rg = 1  tf pF nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = 5 A, VGS = 0 V IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C - - 59.7 - - 100 - 0.77 1.1 V - 40 80 ns - 61 122 nC - 33 - - 7 - A ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing  Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S18-0728-Rev. A, 23-Jul-2018 Document Number: 77881 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS46DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 150 100 VGS = 10 V thru 6 V 120 2nd line ID - Drain Current (A) 2nd line ID - Drain Current (A) 80 VGS = 5 V 60 40 90 60 TC = 25 °C 30 20 TC = 125 °C VGS = 4 V TC = -55 °C 0 0 0 1 2 3 4 0 5 2 4 VDS - Drain-to-Source Voltage (V) 2nd line 10 Axis Title Axis Title 0.016 10 000 10000 10000 1000 0.012 VGS = 10 V 0.010 100 Ciss 1000 1000 Coss 1st line 2nd line VGS = 7.5 V 2nd line C - Capacitance (pF) 0.014 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 8 Transfer Characteristics Output Characteristics Crss 100 100 0.008 0.006 10 10 0 20 40 60 80 10 0 100 20 40 60 80 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current and Gate Voltage Capacitance Axis Title 100 2 0 10 0 6 12 18 24 30 2.1 VGS = 10 V, ID = 10 A 1.3 VGS = 7.5 V, ID = 10 A 100 0.9 0.5 10 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature S18-0728-Rev. A, 23-Jul-2018 1000 1.7 1st line 2nd line 1st line 2nd line VDS = 25 V, 50 V, 75 V 4 2nd line RDS(on) - On-Resistance (Normalized) 1000 6 10000 2.5 ID = 10 A 8 100 Axis Title 10000 10 2nd line VGS - Gate-to-Source Voltage (V) 6 VGS - Gate-to-Source Voltage (V) 2nd line Document Number: 77881 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS46DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 0.6 10000 10000 2nd line VGS(th) - Variance (V) TJ = 25 °C 1 100 0 1000 1st line 2nd line 1000 TJ = 150 °C 1st line 2nd line 2nd line IS - Source Current (A) 0.3 10 ID = 5 mA -0.3 -0.6 100 0.1 ID = 250 μA -0.9 0.01 -1.2 10 0 0.2 0.4 0.6 0.8 1.0 10 -50 -25 0 25 50 75 100 125 150 VSD - Source-to-Drain Voltage (V) 2nd line TJ - Temperature (°C) 2nd line Source-Drain Diode Forward Voltage Threshold Voltage Axis Title Axis Title 0.05 10000 100 10000 80 1000 2nd line Power (W) 1000 TJ = 150 °C 0.02 60 1st line 2nd line 0.03 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) ID = 10 A 0.04 40 100 100 TJ = 25 °C 0.01 20 0 10 0 2 4 6 8 0 0.001 10 10 0.01 0.1 1 10 VGS - Gate-to-Source Voltage (V) 2nd line Time (s) 2nd line On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient Axis Title 1000 10000 IDM limited ID limited 1000 10 100 μs 1 Limited by RDS(on) (1) 0.1 TA = 25 °C Single pulse 0.01 0.01 0.1 BVDSS limited 1 10 1 ms 10 ms 100 100 ms 1s 10 s DC 10 100 1st line 2nd line 2nd line ID - Drain Current (A) 100 VDS - Drain-to-Source Voltage (V) (1) V GS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S18-0728-Rev. A, 23-Jul-2018 Document Number: 77881 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS46DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 50 10000 1000 30 1st line 2nd line 2nd line ID - Drain Current (A) 40 20 100 10 0 10 0 25 50 75 100 125 150 TC - Case Temperature (°C) 2nd line Current Derating a Axis Title Axis Title 80 2.5 10000 2 64 32 100 16 1.5 1st line 2nd line 1st line 2nd line 48 2nd line Power (W) 1000 1000 2nd line Power (W) 10000 1 100 0.5 0 10 0 25 50 75 100 125 150 0 10 0 25 50 75 100 125 TC - Case Temperature (°C) 2nd line TA - Ambient Temperature (°C) 2nd line Power, Junction-to-Case Power, Junction-to-Ambient 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S18-0728-Rev. A, 23-Jul-2018 Document Number: 77881 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS46DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 1 0.1 0.2 Notes: 0.1 PDM 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 t1 t2 t 1. Duty cycle, D = 1 t2 2. Per unit base = RthJA = 63 °C/W 0.05 0.02 3. TJM - TA = PDMZthJA 0.001 (t) 4. Surface mounted Single pulse 0.01 0.0001 100 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 10000 1000 1st line 2nd line Thermal Impedance Duty cycle = 0.5 0.2 0.1 100 0.05 0.02 Single pulse 0.1 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case                     Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77881. S18-0728-Rev. A, 23-Jul-2018 Document Number: 77881 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix Case Outline for PowerPAK® 1212-8S A 0.10 C 2x D 8 7 Z 6 5 D1 5 6 b 4 3 7 8 2 1 K1 E1 E K B L 0.10 C 1 2x 2 3 4 Pin 1 dot e 0.10 M C A B 0.05 M C 0.10 C C A A3 0.08 C A1 A MIN. 0.67 MILLIMETERS NOM. 0.75 MAX. 0.83 MIN. 0.026 INCHES NOM. 0.030 MAX. 0.033 A1 0.00 - 0.05 0.000 - 0.002 DIM. A3 0.20 ref. 0.008 ref b 0.25 0.30 0.35 0.010 0.012 D 3.20 3.30 3.40 0.126 0.130 0.134 D1 2.15 2.25 2.35 0.085 0.089 0.093 E 3.20 3.30 3.40 0.126 0.130 0.134 E1 1.60 1.70 1.80 0.063 0.067 0.071 e 0.65 bsc. 0.026 bsc. K 0.76 ref. 0.030 ref. K1 L 0.41 ref. 0.33 Z 0.43 0.525 ref. 0.014 0.016 ref. 0.53 0.013 0.017 0.021 0.021 ref. ECN: C20-0862-Rev. B, 20-Jul-2020 DWG: 6008 Revision: 20-Jul-2020 Document Number: 63919 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single 0.152 (3.860) 0.039 0.068 (0.990) (1.725) 0.010 (0.255) (2.390) 0.094 0.088 (2.235) 0.016 (0.405) 0.026 (0.660) 0.025 0.030 (0.635) (0.760) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72597 Revision: 21-Jan-08 www.vishay.com 7 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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