SISS50DN-T1-GE3

SiSS50DN www.vishay.com Vishay Siliconix N-Channel 45 V (D-S) MOSFET FEATURES PowerPAK® 1212-8S D D D 7 8 D 6 5 • TrenchFET® Gen IV power MOSFET • Very low RDS(on) in a compact and thermally enhanced package • Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss 3. 3 m m 1 m 3m 3. Top View 4 G Bottom View 3 S 2 S • 100 % Rg and UIS tested 1 S • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration D • Synchronous rectification 45 0.00283 0.0041 21.4 108 Single • Synchronous buck converter • High power density DC/DC • Battery switching and protection • Load switching G N-Channel MOSFET S ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK 1212-8S SISS50DN-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) ID IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) c PD TJ, Tstg LIMIT 45 +20 / -16 108 86 29.7 b, c 23.7 b, c 300 59.7 4.5 b, c 30 45 65.7 42 5 b, c 3.2 b, c -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT t  10 s RthJA 20 25 Maximum junction-to-ambient b °C/W Maximum junction-to-case (drain) Steady state RthJC 1.5 1.9 Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 65 °C/W g. TC = 25 °C S19-0700-Rev. A, 19-Aug-2019 Document Number: 77149 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS50DN www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 1 mA VDS/TJ VDS temperature coefficient ID = 1 mA, VGS(th) temperature coefficient ID = 250 μA 45 - - V - 28 - - -5.4 - Static Drain-source breakdown voltage VDS temperature coefficient VGS(th) temperature coefficient VGS(th)/TJ Gate-source threshold voltage mV/°C VGS(th) VDS = VGS, ID = 250 μA 1.1 - 2.3 V Gate-source leakage IGSS VDS = 0 V, VGS = +20, -16 V - - ± 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = 45 V, VGS = 0 V - - 1 VDS = 45 V, VGS = 0 V, TJ = 75 °C - - 20 VDS  5 V, VGS = 10 V 30 - - A  VGS = 10 V, ID = 15 A - 0.00225 0.00283 VGS = 4.5 V, ID = 10 A - 0.0031 0.0041 VDS = 10 V, ID = 15 A - 72 - μA S Dynamic b Input capacitance Ciss - 4000 - Output capacitance Coss - 630 - Reverse transfer capacitance Crss - 56 - - 0.014 0.028 - 46.7 70 - 21.4 32 - 11.1 - - 3.6 - VDS = 20 V, VGS = 0 V, f = 1 MHz Crss/Ciss ratio Total gate charge Qg VDS = 20 V, VGS = 10 V, ID = 15 A VDS = 20 V, VGS = 4.5 V, ID = 15 A Gate-source charge Qgs Gate-drain charge Qgd Output charge Qoss VDS = 20 V, VGS = 0 V - 28 - Gate resistance Rg f = 1 MHz 0.5 1.15 2 - 15 30 - 6 12 60 Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) VDD = 20 V, RL = 2  ID  10 A, VGEN = 10 V, Rg = 1  pF nC  - 30 tf - 6 12 td(on) - 30 60 - 67 134 - 28 56 - 10 20 - - 50.9 - - 300 - 0.72 1.1 V - 32 64 ns - 24 48 nC - 17 - - 15 - tr td(off) VDD = 20 V, RL = 2  ID  10 A, VGEN = 4.5 V, Rg = 1  tf ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current (tp = 100 μs) ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = 5 A IF = 15 A, di/dt = 100 A/μs, TJ = 25 °C A ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing    Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S19-0700-Rev. A, 19-Aug-2019 Document Number: 77149 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS50DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 200 10000 250 VGS = 10 V thru 4 V 80 100 VGS = 3 V 40 1000 150 1st line 2nd line 1000 120 2nd line ID - Drain Current (A) 200 1st line 2nd line 100 TC = 25 °C 50 10 0 0 1 2 3 4 TC = -55 °C TC = 125 °C VGS = 2 V 10 0 5 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title 6 Axis Title 10000 0.0058 10000 10 000 1st line 2nd line VGS = 4.5 V 0.0038 0.0028 100 0.0018 2nd line C - Capacitance (pF) 1000 Coss 1000 1000 1st line 2nd line 2nd line RDS(on) - On-Resistance ( ) Ciss 0.0048 Crss 100 100 VGS = 10 V 10 0.0008 0 40 80 120 160 10 10 200 0 9 18 36 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance Axis Title 1000 1st line 2nd line VDS = 10 V, 20 V, 30 V 100 2 10 0 10 20 30 40 50 2nd line RDS(on) - On-Resistance (Normalized) ID = 15 A 6 10000 1.9 8 4 45 Axis Title 10000 0 27 ID - Drain Current (A) 10 2nd line VGS - Gate-to-Source Voltage (V) 100 VGS = 10 V, 15 A 1.6 1000 1.3 1.0 VGS = 4.5 V, 15 A 100 0.7 10 0.4 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S19-0700-Rev. A, 19-Aug-2019 1st line 2nd line 2nd line ID - Drain Current (A) 160 Document Number: 77149 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS50DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 0.015 10000 100 1000 TJ = 150 °C 1 TJ = 25 °C 100 0.1 0.012 1000 0.009 1st line 2nd line 2nd line RDS(on) - On-Resistance ( ) 10 1st line 2nd line 2nd line IS - Source Current (A) ID = 15 A TJ = 125 °C 0.006 100 0.003 TJ = 25 °C 0.01 0 0.2 0.4 0.6 0.8 1.0 10 0 10 1.2 0 2 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 10000 0.5 10000 500 0.2 400 100 ID = 250 µA 300 1st line 2nd line ID = 5 mA -0.4 1000 2nd line P - Power (W) 1000 -0.1 1st line 2nd line 2nd line VGS(th) - Variance (V) 4 200 100 -0.7 100 10 -1.0 -50 -25 0 25 50 75 0 0.0001 100 125 150 10 0.001 TJ - Junction Temperature (°C) 0.01 0.1 1 10 t - Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient Axis Title 10000 1000 IDM limited ID limited 1000 10 100 µs Limited by RDS(on) 1 ms a 1 10 ms 1st line 2nd line 2nd line ID - Drain Current (A) 100 100 100 ms 0.1 TA = 25 °C, single pulse 0.01 0.01 BVDSS limited 1s 10s DC 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area Note a. VGS > minimum VGS at which RDS(on) is specified S19-0700-Rev. A, 19-Aug-2019 Document Number: 77149 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS50DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 120 1000 72 1st line 2nd line 2nd line ID - Drain Current (A) 96 48 100 24 10 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating a Axis Title Axis Title 10000 80 64 32 100 16 1000 1.5 1st line 2nd line 1000 48 2nd line P - Power (W) 2.0 1st line 2nd line 2nd line P - Power (W) 10000 2.5 1.0 100 0.5 10 0 0 25 50 75 100 125 150 10 0 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S19-0700-Rev. A, 19-Aug-2019 Document Number: 77149 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS50DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Normalized Effective Transient Thermal Impedance 1 10000 Duty cycle = 0.5 Notes 0.2 PDM 0.1 0.1 1000 t1 0.05 t2 t1 1. Duty cycle, D = t 2 2. Per unit base = RthJA = 65 °C/W 0.02 Single pulse 3. TJM - TA = PDMZthJA 100 (t) 4. Surface mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 10000 Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 1st line 2nd line 1000 0.2 0.1 100 0.05 0.02 Single pulse 0.1 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case                     Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77149. S19-0700-Rev. A, 19-Aug-2019 Document Number: 77149 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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