SISS5710DN-T1-GE3

SiSS5710DN www.vishay.com Vishay Siliconix N-Channel 150 V (D-S) MOSFET FEATURES PowerPAK® 1212-8S D D D 7 8 D 6 5 • TrenchFET® Gen V power MOSFET • Very low RDS x Qg figure of merit (FOM) • Tuned for the lowest RDS x Qoss FOM • 100 % Rg and UIS tested 3. 3 m m 1 3.3 mm Top View 3 4 S G Bottom View 2 S • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 S APPLICATIONS PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 7.5 V Qg typ. (nC) ID (A) a Configuration D • Synchronous rectification • Primary side switch 150 0.0315 0.037 7.7 26.2 Single • DC/DC converters G • OR-ing and hot swap switch • Power supplies N-Channel MOSFET • Motor drive control S • Battery management ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK 1212-8S SISS5710DN-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) LIMIT 150 ± 20 26.2 21.0 7.2 b, c 5.8 b, c 70 49.4 3.7 b, c 15 11.25 54.3 34.7 4.1 b, c 2.6 b, c -55 to +150 260 ID IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e PD TJ, Tstg UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient b Maximum junction-to-case (drain) t ≤ 10 s Steady state SYMBOL RthJA RthJC TYPICAL 23 1.9 MAXIMUM 30 2.3 UNIT °C/W Notes a. TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 75 °C/W S22-0143-Rev. A, 14-Feb-2022 Document Number: 62049 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS5710DN www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT V Static Drain-source breakdown voltage VDS VGS = 0 V, ID = 1 mA 150 - - ΔVDS/TJ ID = 10 mA - 106 - VGS(th) temperature coefficient ΔVGS(th)/TJ ID = 250 μA - -7.7 - Gate-source threshold voltage VDS temperature coefficient mV/°C VGS(th) VDS = VGS, ID = 250 μA 2 - 4 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA Zero gate voltage drain current IDSS Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = 120 V, VGS = 0 V - - 1 VDS = 120 V, VGS = 0 V, TJ = 70 °C - - 15 VGS = 10 V, ID = 10 A - 0.026 0.0315 VGS = 7.5 V, ID = 10 A - 0.0305 0.037 VDS = 10 V, ID = 10 A - 19 - - 770 - VDS = 75 V, VGS = 0 V, f = 1 MHz - 105 - - 6.8 - μA Ω S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg VDS = 75 V, VGS = 10 V, ID = 10 A VDS = 75 V, VGS = 7.5 V, ID = 10 A - 10 15 - 7.7 12 - 5.0 - - 1.15 - Gate-source charge Qgs Gate-drain charge Qgd Output charge Qoss VDS = 75 V, VGS = 0 V - 33 - Gate resistance Rg f = 1 MHz 0.5 1.4 2.4 - 11 22 - 7 14 - 12 24 tf - 13 26 td(on) - 12 24 - 8 16 - 11 22 - 13 26 Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) tr td(off) VDD = 75 V, RL = 7.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω VDD = 75 V, RL = 7.5 Ω ID ≅ 10 A, VGEN = 7.5 V, Rg = 1 Ω tf pF nC Ω ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current (tp = 100 μs) ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C - - 49.4 - - 70 IS = 5 A - 0.81 1.1 - 75 150 ns IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C - 113 225 nC - 55 - - 20 - A V ns Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S22-0143-Rev. A, 14-Feb-2022 Document Number: 62049 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS5710DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 50 10000 55 VGS = 10 V thru 7 V VGS = 6 V 20 100 1000 33 1st line 2nd line 1000 30 2nd line ID - Drain Current (A) 44 1st line 2nd line 22 100 TC = 25 °C 11 10 VGS = 5 V thru 0 V TC = -55 °C TC = 125 °C 0 1 2 3 4 10 0 10 0 0 5 2 4 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title 10 Axis Title 10000 10 000 10000 Ciss VGS = 7.5 V 1000 0.032 0.028 100 VGS = 10 V 2nd line C - Capacitance (pF) 0.036 1st line 2nd line 2nd line RDS(on) - On-Resistance ( ) 8 VDS - Drain-to-Source Voltage (V) 0.040 1000 1000 Coss 100 100 Crss 10 0.024 0 10 20 30 40 10 1 10 0.020 0 50 30 60 120 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance Axis Title 1st line 2nd line VDS = 50 V, 75 V, 100 V 4 100 2 10 0 4.4 6.6 8.8 11 VGS = 10 V, 10 A 2.1 1000 1.7 1st line 2nd line 1000 2nd line RDS(on) - On-Resistance (Normalized) ID = 10 A 6 10000 2.5 8 2.2 150 Axis Title 10000 0 90 ID - Drain Current (A) 10 2nd line VGS - Gate-to-Source Voltage (V) 6 1st line 2nd line 2nd line ID - Drain Current (A) 40 1.3 VGS = 7.5 V, 10 A 0.9 10 0.5 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S22-0143-Rev. A, 14-Feb-2022 100 Document Number: 62049 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS5710DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 0.15 10000 100 2nd line RDS(on) - On-Resistance ( ) 1000 TJ = 150 °C TJ = 25 °C 1 100 0.1 0.01 1000 0.09 TJ = 125 °C 0.06 100 TJ = 25 °C 0.03 10 0 0.2 0.4 0.6 0.8 1.0 10 0 1.2 5 6 7 8 9 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 10000 0.6 10000 400 0.2 320 -0.6 100 ID = 250 µA 240 1st line 2nd line ID = 5 mA 1000 2nd line P - Power (W) 1000 -0.2 1st line 2nd line 2nd line VGS(th) - Variance (V) 1st line 2nd line 10 1st line 2nd line 2nd line IS - Source Current (A) ID = 10 A 0.12 160 100 -1.0 80 10 -1.4 -50 -25 0 25 50 75 0 0.0001 100 125 150 10 0.001 0.01 0.1 1 10 TJ - Junction Temperature (°C) t - Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient Axis Title 10000 100 IDM limited ID limited 100 µs 1000 1 1 ms Limited by RDS(on) a 10 ms 100 ms 0.1 1s 10 s 0.01 100 DC TA = 25 °C, single pulse 0.001 0.01 1st line 2nd line 2nd line ID - Drain Current (A) 10 0.1 BVDSS limited 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) Safe Operating Area Note a. VGS > minimum VGS at which RDS(on) is specified S22-0143-Rev. A, 14-Feb-2022 Document Number: 62049 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS5710DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 30 2nd line ID - Drain Current (A) 24 1000 1st line 2nd line 18 12 100 6 10 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power, Junction-to-Case Axis Title Axis Title 10000 70 1.6 1st line 2nd line 28 100 14 1000 1.2 1st line 2nd line 1000 42 2nd line P - Power (W) 56 2nd line P - Power (W) 10000 2.0 0.8 100 0.4 10 0 0 25 50 75 100 125 TC - Case Temperature (°C) Current Derating a 150 10 0 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power, Junction-to-Ambient Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S22-0143-Rev. A, 14-Feb-2022 Document Number: 62049 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS5710DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 Duty cycle = 0.5 Notes 0.2 PDM 0.1 0.1 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.05 t1 t2 t1 1. Duty cycle, D = t 2 2. Per unit base = RthJA = 75 °C/W 0.02 Single pulse 3. TJM - TA = PDMZthJA 100 (t) 4. Surface mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 10000 Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 1000 1st line 2nd line 0.2 0.1 0.05 100 0.02 Single pulse 0.1 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62049. S22-0143-Rev. A, 14-Feb-2022 Document Number: 62049 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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