SISS63DN-T1-GE3

SiSS63DN www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PowerPAK® 1212-8S D D D 6 7 5 • TrenchFET® Gen III p-channel power MOSFET D 8 • Leadership RDS(on) in compact and thermally enhanced package • 100 % Rg and UIS tested 3. 3 m m 1 3.3 mm Top View 4 G Bottom View 3 S 2 S • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 S APPLICATIONS S • Battery management • Load switch G PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -4.5 V RDS(on) max. () at VGS = -2.5 V RDS(on) max. () at VGS = -1.8 V Qg typ. (nC) ID (A) Configuration -20 0.0027 0.0036 0.0070 72.2 -127.5 Single D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK 1212-8S SiSS63DN-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) ID IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) c PD TJ, Tstg LIMIT -20 ± 12 -127.5 -102 -35.1 b, c -28.1 -200 -54.8 -4.2 b, c -25 31.2 65.8 42.1 5 b, c 3.2 b, c -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum junction-to-ambient b t  10 s RthJA 20 25 °C/W Maximum junction-to-case (drain) Steady state RthJC 1.5 1.9 Notes a. TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 65 °C/W S19-0543-Rev. A, 01-Jul-2019 Document Number: 71591 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS63DN www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT V Static Drain-source breakdown voltage VDS VGS = 0 V, ID = -250 μA -20 - - VDS/TJ ID = -10 mA - -15 - VGS(th) temperature coefficient VGS(th)/TJ ID = -250 μA - 4 - Gate-source threshold voltage VDS temperature coefficient mV/°C VGS(th) VDS = VGS, ID = -250 μA -0.5 - -1.5 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 12 V - - 100 nA Zero gate voltage drain current IDSS On-state drain current a Drain-source on-state resistance a Forward transconductance a VDS = -20 V, VGS = 0 V - - -1 VDS = -20 V, VGS = 0 V, TJ = 70 °C - - -15 ID(on) VDS  -10 V, VGS = -10 V -20 - - VGS = -10 V, ID = -15 A - 0.0022 0.0027 RDS(on) VGS = -4.5 V, ID = -10 A - 0.0030 0.0036 VGS = -2.5 V, ID = -5 A - 0.0053 0.0070 VDS = -10 V, ID = -15 A - 75 - - 7080 - VDS = -10 V, VGS = 0 V, f = 1 MHz - 1000 - - 1110 - - 157.2 236 - 72.2 110 VDS = -10 V, VGS = -4.5 V, ID = -35.1 A - 17.7 - - 22 - f = 1 MHz 0.3 1.5 3 - 20 40 - 28 56 - 80 160 tf - 25 50 td(on) - 40 80 - 60 120 - 100 200 - 70 140 gfs μA A  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = -10 V, VGS = -8 V, ID = -35.1 A td(on) tr td(off) tr td(off) VDD = -10 V, RL = 0.36 , ID  -28.1 A, VGEN = -10 V, Rg = 1  VDD = -10 V, RL = 0.36 , ID  -28.1 A, VGEN = -4.5 V, Rg = 1  tf pF nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = -5 A, VGS = 0 V IF = -28.1 A, di/dt = 100 A/μs, TJ = 25 °C - - -54.8 - - -200 - -0.66 -1.2 V - 20 40 ns - 9.5 19 nC - 11.5 - - 8.5 - A ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing  Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S19-0543-Rev. A, 01-Jul-2019 Document Number: 71591 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS63DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 150 10000 10 000 VGS = 10 V thru 3 V Ciss VGS = 2 V 100 Coss 1000 1000 Crss 1st line 2nd line 60 2nd line C - Capacitance (pF) 1000 90 1st line 2nd line 2nd line ID - Drain Current (A) 120 100 100 30 0 1.0 2.0 3.0 10 10 10 0 0 4.0 5 10 15 VDS - Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 20 Axis Title Axis Title 10000 10 10000 100 1000 TC = 125 °C 40 100 TC = 25 °C 0 0.5 1.0 1.5 2.0 2.5 4 2 10 0 3.0 40 80 Qg - Total Gate Charge (nC) On-Resistance vs. Drain Current and Gate Voltage Capacitance Axis Title 1st line 2nd line VGS = 4.5 V 0.002 100 VGS = 10 V 10 0 25 50 75 100 2nd line RDS(on) - On-Resistance (Normalized) 1000 VGS = 2.5 V 0.006 10000 1.6 0.008 0 160 Axis Title 10000 0.010 2nd line RDS(on) - On-Resistance ( ) 120 VGS - Gate-to-Source Voltage (V) 0.004 100 VDS = 5 V, 10 V, 16 V 0 10 0 1000 6 VGS = 10 V, 15 A 1.4 1000 1.2 1.0 VGS = 4.5 V, 10 A VGS = 2.5 V, 5 A 100 0.8 10 0.6 -50 -25 0 25 50 75 100 125 150 ID - Drain Current (A) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S19-0543-Rev. A, 01-Jul-2019 1st line 2nd line 20 8 1st line 2nd line TC = -55 °C 60 1st line 2nd line 2nd line ID - Drain Current (A) 80 2nd line VGS - Gate-to-Source Voltage (V) ID = 35.1 A Document Number: 71591 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS63DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 1.1 10000 100 10000 TJ = 150 °C 10 0.9 1000 1st line 2nd line TJ = 25 °C 1 2nd line VGS(th) (V) 1000 1st line 2nd line 2nd line IS - Source Current (A) ID = 250 µA 0.7 100 100 0.1 0.5 0.01 10 0 0.2 0.4 0.6 0.8 10 0.3 1.0 -50 -25 0 25 50 75 100 125 150 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage Axis Title Axis Title 140 10000 0.010 10000 0.008 TJ = 125 °C 0.004 100 TJ = 25 °C 1000 1st line 2nd line 0.006 105 2nd line ID - Drain Current (A) 1000 1st line 2nd line 2nd line RDS(on) - On-Resistance ( ) ID = 15 A 70 100 35 0.002 0 2 4 6 8 10 0 10 0 0 10 25 50 75 100 125 150 VGS - Gate-to-Source Voltage (V) TC - Case Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient Axis Title 10000 1000 IDM limited 100 µs 10 1 ms Limited by RDS(on) a 1000 1st line 2nd line 2nd line ID - Drain Current (A) 100 10 ms 1 100 ms 10s, 1s 0.1 100 DC 0.01 TA = 25 °C, single pulse 0.001 0.01 0.1 BVDSS limited 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) Safe Operating Area, Junction-to-Ambient Note a. VGS > minimum VGS at which RDS(on) is specified S19-0543-Rev. A, 01-Jul-2019 Document Number: 71591 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS63DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 500 1000 300 1st line 2nd line 2nd line P - Power (W) 400 200 100 100 0 0.0001 10 0.001 0.01 0.1 1 10 t - Time (s) Current Derating a Axis Title Axis Title 10000 2.5 64 1st line 2nd line 1.0 100 1000 48 1st line 2nd line 1000 1.5 2nd line P - Power (W) 2.0 2nd line P - Power (W) 10000 80 32 100 16 0.5 10 0 0 25 50 75 100 125 150 10 0 0 25 50 75 100 125 TA - Ambient Temperature (°C) TC - Case Temperature (°C) Single Pulse Power, Junction-to-Ambient Power, Junction-to-Case 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S19-0543-Rev. A, 01-Jul-2019 Document Number: 71591 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS63DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 1 10000 Notes 0.2 PDM 0.1 0.1 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 t1 0.05 t2 t1 1. Duty cycle, D = t 2 2. Per unit base = RthJA = 65 °C/W 0.02 3. TJM - TA = PDMZthJA Single pulse 100 (t) 4. Surface mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 10000 Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 1000 1st line 2nd line 0.2 0.1 0.05 100 0.02 Single pulse 0.1 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case                      Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71591. S19-0543-Rev. A, 01-Jul-2019 Document Number: 71591 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix Case Outline for PowerPAK® 1212-8S A 0.10 C 2x D 8 7 Z 6 5 D1 5 6 b 4 3 7 8 2 1 K1 E1 E K B L 0.10 C 1 2x 2 3 4 Pin 1 dot e 0.10 M C A B 0.05 M C 0.10 C C A A3 0.08 C A1 A MIN. 0.67 MILLIMETERS NOM. 0.75 MAX. 0.83 MIN. 0.026 INCHES NOM. 0.030 MAX. 0.033 A1 0.00 - 0.05 0.000 - 0.002 DIM. A3 0.20 ref. 0.008 ref b 0.25 0.30 0.35 0.010 0.012 D 3.20 3.30 3.40 0.126 0.130 0.134 D1 2.15 2.25 2.35 0.085 0.089 0.093 E 3.20 3.30 3.40 0.126 0.130 0.134 E1 1.60 1.70 1.80 0.063 0.067 0.071 e 0.65 bsc. 0.026 bsc. K 0.76 ref. 0.030 ref. K1 L 0.41 ref. 0.33 Z 0.43 0.525 ref. 0.014 0.016 ref. 0.53 0.013 0.017 0.021 0.021 ref. ECN: C20-0862-Rev. B, 20-Jul-2020 DWG: 6008 Revision: 20-Jul-2020 Document Number: 63919 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single 0.152 (3.860) 0.039 0.068 (0.990) (1.725) 0.010 (0.255) (2.390) 0.094 0.088 (2.235) 0.016 (0.405) 0.026 (0.660) 0.025 0.030 (0.635) (0.760) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72597 Revision: 21-Jan-08 www.vishay.com 7 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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