SISS64DN-T1-GE3

SiSS64DN www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PowerPAK® 1212-8S D D D 7 8 D 6 5 • TrenchFET® Gen IV power MOSFET • Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss • 100 % Rg and UIS tested 3. 3 m m 1 m 3m 3. Top View 3 4 S G Bottom View 2 S 1 S APPLICATIONS D • Synchronous rectification • High power density DC/DC PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 • VRMs and embedded DC/DC 30 0.00210 0.00286 21 40 Single • Synchronous buck converter G • Load switching S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK 1212-8S SiSS64DN-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) ID IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS Maximum power dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e TJ, Tstg LIMIT 30 +20, -16 40 g 40 g 37 b, c 29.8 b, c 100 40 g 4 b, c 30 45 57 36 4.8 b, c 3 b, c -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT t ≤ 10 s RthJA 21 26 Maximum junction-to-ambient b, f °C/W Maximum junction-to-case (drain) Steady state RthJC 1.7 2.2 Notes a. Based on TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 70 °C/W g. Package limited S17-0779-Rev. A, 22-May-17 Document Number: 67294 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS64DN www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 30 - - V - 18 - - -6.2 - Static Drain-source breakdown voltage VDS temperature coefficient ΔVDS/TJ VGS(th) temperature coefficient ΔVGS(th)/TJ Gate-source threshold voltage ID = 250 μA mV/°C VGS(th) VDS = VGS, ID = 250 μA 1.1 - 2.2 V Gate-source leakage IGSS VDS = 0 V, VGS = +20 V, -16 V - - ± 100 nA Zero gate voltage drain current IDSS VDS = 30 V, VGS = 0 V - - 1 V= 30 V, VDS GS = 0 V, TJ = 55 °C - - 10 On-state drain current a ID(on) VDS ≥ 5 V, VGS = 10 V 40 - - VGS = 10 V, ID = 10 A - 0.00180 0.00210 VGS = 4.5 V, ID = 10 A - 0.00220 0.00286 VDS = 10 V, ID = 10 A - Drain-source on-state resistance a Forward transconductance a Dynamic RDS(on) gfs 70 - μA A Ω S b Input capacitance Ciss - 3420 - Output capacitance Coss - 1100 - Reverse transfer capacitance Crss - 81 - VDS = 15 V, VGS = 0 V, f = 1 MHz Crss/Ciss ratio V = 15 V, VGS = 10 V, ID = 10 A - 0.024 0.048 - 45 68 - 21 32 - 10.5 - - 2.7 - Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Output charge Qoss VDS = 15 V, VGS = 0 V - 37 - Gate resistance Rg f = 1 MHz 0.2 0.8 1.6 - 13 25 - 15 30 - 25 50 tf - 10 20 td(on) - 24 48 - 45 70 Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = 15 V, VGS = 4.5 V, ID = 10 A td(on) tr td(off) tr td(off) VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω tf pF nC Ω ns - 30 60 - 15 30 - - 40 - - 100 - 0.73 1.2 V - 40 80 ns - 34 70 nC - 20 - - 20 - Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current (t = 100 μs) ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery Fall time ta Reverse recovery Rise time tb TC = 25 °C IS = 10 A IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C A ns Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-0779-Rev. A, 22-May-17 Document Number: 67294 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS64DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 20 VGS = 10 V thru 4 V 16 ID - Drain Current (A) ID - Drain Current (A) 80 60 40 VGS = 3 V 20 TC = 25 °C 12 8 TC = 125 °C 4 TC = - 55 °C 0 0.0 0.5 1.0 1.5 0 0.0 2.0 0.5 VDS - Drain-to-Source Voltage (V) 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) 3.5 Transfer Characteristics Output Characteristics 0.0030 5000 Ciss VGS = 4.5 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 4000 0.0025 0.0020 VGS = 10 V 0.0015 3000 2000 Coss 1000 Crss 0.0010 0 0 20 40 60 80 100 0 5 ID - Drain Current (A) 10 15 20 25 VDS - Drain-to-Source Voltage (V) Capacitance On-Resistance vs. Drain Current 1.8 ID = 10 A 8 RDS(on) - On-Resistance (Normalized) 10 VGS - Gate-to-Source Voltage (V) 30 VDS = 7.5 V 6 VDS = 24 V VDS = 15 V 4 2 0 0 10 20 30 40 50 ID = 10 A 1.6 VGS = 10 V 1.4 VGS = 4.5 V 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S17-0779-Rev. A, 22-May-17 Document Number: 67294 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS64DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.008 TJ = 150 °C RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 10 A 10 TJ = 25 °C 1 0.006 0.004 TJ = 125 °C 0.002 TJ = 25 °C 0.1 0.000 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 0 1.2 Source-Drain Diode Forward Voltage 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10 On-Resistance vs. Gate-to-Source Voltage 2.0 100 1.8 80 Power (W) VGS(th) (V) 1.6 1.4 1.2 ID = 250 μA 60 40 1.0 20 0.8 0.6 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 1000 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 1000 Limited by RDS(on)* IDM Limited 100 ID - Drain Current (A) Ion Limited 100 μs 10 1 ms 10 ms 1 0.1 100 ms 1s 10 s TA = 25 °C DC BVDSS Limited 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area S17-0779-Rev. A, 22-May-17 Document Number: 67294 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS64DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 80 150 120 90 Power (W) ID - Drain Current (A) 60 60 40 Package Limited 20 30 0 0 0 25 50 75 100 125 150 0 25 50 75 100 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating a Power, Junction-to-Case 125 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S17-0779-Rev. A, 22-May-17 Document Number: 67294 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS64DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 t2 1. Duty Cycle, D = 0.05 t1 t2 2. Per Unit Base = RthJA = 63 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 0.0001 0.001 4. Surface Mounted 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 0.1 0.0001 Single Pulse 0.001 0.01 0.1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67294. S17-0779-Rev. A, 22-May-17 Document Number: 67294 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix Case Outline for PowerPAK® 1212-8S A 0.10 C 2x D 8 7 Z 6 5 D1 5 6 b 4 3 7 8 2 1 K1 E1 E K B L 0.10 C 1 2x 2 3 4 Pin 1 dot e 0.10 M C A B 0.05 M C 0.10 C C A A3 0.08 C A1 A MIN. 0.67 MILLIMETERS NOM. 0.75 MAX. 0.83 MIN. 0.026 INCHES NOM. 0.030 MAX. 0.033 A1 0.00 - 0.05 0.000 - 0.002 DIM. A3 0.20 ref. 0.008 ref b 0.25 0.30 0.35 0.010 0.012 D 3.20 3.30 3.40 0.126 0.130 0.134 D1 2.15 2.25 2.35 0.085 0.089 0.093 E 3.20 3.30 3.40 0.126 0.130 0.134 E1 1.60 1.70 1.80 0.063 0.067 0.071 e 0.65 bsc. 0.026 bsc. K 0.76 ref. 0.030 ref. K1 L 0.41 ref. 0.33 Z 0.43 0.525 ref. 0.014 0.016 ref. 0.53 0.013 0.017 0.021 0.021 ref. ECN: C20-0862-Rev. B, 20-Jul-2020 DWG: 6008 Revision: 20-Jul-2020 Document Number: 63919 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single 0.152 (3.860) 0.039 0.068 (0.990) (1.725) 0.010 (0.255) (2.390) 0.094 0.088 (2.235) 0.016 (0.405) 0.026 (0.660) 0.025 0.030 (0.635) (0.760) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72597 Revision: 21-Jan-08 www.vishay.com 7 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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