SiSS71DN
www.vishay.com
Vishay Siliconix
P-Channel 100 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
-100
RDS(on) () (MAX.)
ID (A) e
0.059 at VGS = -10 V
-23
0.082 at VGS = -4.5 V
-19.6
20 nC
• ThunderFET® power MOSFET
• Low thermal resistance PowerPAK® package
with small size and low 0.75 mm profile
• 100 % Rg and UIS tested
PowerPAK® 1212-8S
D
D 6
5
Qg (TYP.)
D
7
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
D
8
APPLICATIONS
S
• Active clamp
3.
3
m
m
1
3.3
mm
Top View
2
S
3
4 S
G
Bottom View
1
S
• DC/DC converters
G
• POE
• Load switch
• Motor drive control
Ordering Information:
SiSS71DN-T1-GE3 (lead (Pb)-free and halogen-free)
D
• Battery management
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
-100
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
-23
TC = 70 °C
-18.5
TA = 25 °C
ID
Continuous Source-Drain Diode Current
-5.4 a, b
Avalanche Current
Single Pulse Avalanche Energy
IDM
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 70 °C
TA = 25 °C
-40 e
IS
-4 a, b
IAS
-25
EAS
31
mJ
57
36
PD
W
4.8 a, b
3 a, b
TA = 70 °C
Operating Junction and Storage Temperature Range
A
-40
TC = 25 °C
Maximum Power Dissipation
V
-6.7 a, b
TA = 70 °C
Pulsed Drain Current (t = 100 μs)
UNIT
TJ, Tstg
-50 to +150
Soldering Recommendations (Peak temperature) c, d
°C
260
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. TC = 25 °C.
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum
Junction-to-Ambient a, b
Maximum Junction-to-Case (Drain)
SYMBOL
TYPICAL
MAXIMUM
t 10 s
RthJA
21
26
Steady state
RthJC
1.7
2.2
UNIT
°C/W
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 63 °C/W.
S16-1378-Rev. A, 11-Jul-16
Document Number: 76642
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSS71DN
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = -250 μA
-100
-
-
V
-
-56
-
-
4.2
-
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
ID = -250 μA
mV/°C
VGS(th)
VDS = VGS, ID = -250 μA
-1.5
-
-2.5
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = -100 V, VGS = 0 V
-
-
-1
VDS = -5 V, VGS = 0 V, TJ = 55 °C
-
-
-10
On-State Drain Current a
ID(on)
VDS -5 V, VGS = -10 V
-5
-
-
VGS = -10 V, ID = -5 A
-
0.047
0.059
VGS = -4.5 V, ID = -5 A
-
0.063
0.082
VDS = -15 V, ID = -5 A
-
13
-
-
1050
-
VDS = -50 V, VGS = 0 V, f = 1 MHz
-
330
-
-
20
-
VDS = -50 V, VGS = -10 V, ID = -10 A
-
20
30
-
10
15
-
3.4
-
-
4.4
-
1.1
5.7
11.4
-
35
70
-
30
60
Drain-Source On-State Resistance a
Forward Transconductance a
Dynamic
RDS(on)
gfs
μA
A
S
b
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
VDS = -50 V, VGS = -4.5 V, ID = -10 A
f = 1 MHz
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
Turn-On Delay Time
Rise Time
-
21
40
-
11
20
td(on)
-
10
20
-
18
40
-
25
50
-
11
20
-
-
-40 c
-
-
-40
-
-0.83
-1.2
V
-
65
130
ns
-
156
312
nC
-
37
-
-
28
-
td(off)
Fall Time
nC
tf
tr
Turn-Off Delay Time
VDD = -50 V, RL = 10 ,
ID -5 A, VGEN = -4.5 V, Rg = 1
pF
VDD = -50 V, RL = 10 ,
ID -5 A, VGEN = -10 V, Rg = 1
tf
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
IS
TC = 25 °C
ISM
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = -5 A
IF = -5 A, dI/dt = 100 A/μs, TJ = 25 °C
A
ns
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Package limited.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-1378-Rev. A, 11-Jul-16
Document Number: 76642
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSS71DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
40
Axis Title
10000
VGS = 10 V to 6 V
10000
40
VGS = 4 V
20
100
10
30
1000
1st line
2nd line
1000
2nd line
ID - Drain Current (A)
30
1st line
2nd line
2nd line
ID - Drain Current (A)
VGS = 5 V
20
100
TC = 25 °C
10
VGS = 3 V
TC = 125 °C
0
0
1
2
3
4
5
10
0
1
2
3
5
VGS - Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
1500
10000
10000
VGS = 4.5 V
100
0.04
VGS = 10 V
Ciss
1000
900
1st line
2nd line
1st line
2nd line
1000
2nd line
C - Capacitance (pF)
1200
0.12
0.08
6
Axis Title
Axis Title
600
100
Coss
300
Crss
0
10
0
10
20
30
0
10
0
40
20
40
60
80
ID - Drain Current (A)
2nd line
VDS - Drain-to-Source Voltage (V)
2nd line
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
Axis Title
Axis Title
10000
ID = 10 A
8
VDS = 50 V
1000
1st line
2nd line
6
VDS = 25 V
VDS = 80 V
4
100
2
0
10
0
5
10
15
20
25
10000
1.8
2nd line
RDS(on) - On-Resistance (Normalized)
10
100
ID = 5 A
VGS = 10 V
1.6
1000
1.4
VGS = 4.5 V
1.2
1.0
100
0.8
0.6
10
-50
-25
0
25
50
75
100 125 150
Qg - Total Gate Charge (nC)
2nd line
TJ - Junction Temperature (°C)
2nd line
Gate Charge
On-Resistance vs. Junction Temperature
S16-1378-Rev. A, 11-Jul-16
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
4
VDS - Drain-to-Source Voltage (V)
2nd line
0.16
2nd line
VGS - Gate-to-Source Voltage (V)
TC = -55 °C
0
10
Document Number: 76642
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSS71DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
100
10000
0.15
10000
10
1000
TJ = 25 °C
1
100
0.1
0.12
1000
0.09
0.06
100
0.2
0.4
0.6
0.8
1.0
TJ = 25 °C
0.03
10
0
TJ = 125 °C
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
TJ = 150 °C
1st line
2nd line
2nd line
IS - Source Current (A)
ID = 5 A
0
10
0
1.2
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
2.0
10000
100
80
Power (W)
1000
1.6
1st line
2nd line
2nd line
VGS(th) (V)
1.8
1.4
60
40
100
ID = 250 μA
20
1.2
1.0
0
0.001
10
-50
-25
0
25
50
75
100 125 150
0.01
0.1
TJ - Temperature (°C)
2nd line
Threshold Voltage
1
Time (s)
10
100
1000
Single Pulse Power, Junction-to-Ambient
Axis Title
100
10000
IDM limited
10
100 μs
1
1000
1st line
2nd line
2nd line
ID - Drain Current (A)
Limited by RDS(on)(1)
1 ms
ID limited
10 ms
100
100 ms
0.1
1s
TA = 25 °C
Single pulse
10 s
BVDSS limited
DC
0.01
0.1
(1)
1
10
100
10
1000
VDS - Drain-to-Source Voltage (V)
VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S16-1378-Rev. A, 11-Jul-16
Document Number: 76642
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSS71DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
30
10000
70
60
50
12
Power (W)
1000
18
1st line
2nd line
2nd line
ID - Drain Current (A)
24
40
30
100
20
6
10
0
10
0
25
50
75
100
TC - Case Temperature (°C)
2nd line
Current Derating a
125
150
0
0
25
50
75
100
125
TC - Case Temperature (°C)
150
Power, Junction-to-Case
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-1378-Rev. A, 11-Jul-16
Document Number: 76642
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSS71DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
1
Duty cycle = 0.5
0.1
0.2
Notes:
0.1
P DM
t1
0.05
t2
t
1.Duty cycle, D = 1
t2
2.Per unit base = R thJA = 63 °C/W
0.02
3.TJM - T A = PDM Z thJA (t)
Single pulse
0.01
0.0001
0.001
4.Surface mounted
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
1
Duty cycle = 0.5
0.2
0.1
0.05
0.02
0.1
0.0001
Single pulse
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?76642.
S16-1378-Rev. A, 11-Jul-16
Document Number: 76642
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
Case Outline for PowerPAK® 1212-8S
A
0.10 C
2x
D
8
7
Z
6
5
D1
5
6
b
4
3
7
8
2
1
K1
E1
E
K
B
L
0.10 C
1
2x
2
3
4
Pin 1 dot
e
0.10 M C A B
0.05 M C
0.10 C
C
A
A3
0.08 C
A1
A
MIN.
0.67
MILLIMETERS
NOM.
0.75
MAX.
0.83
MIN.
0.026
INCHES
NOM.
0.030
MAX.
0.033
A1
0.00
-
0.05
0.000
-
0.002
DIM.
A3
0.20 ref.
0.008 ref
b
0.25
0.30
0.35
0.010
0.012
D
3.20
3.30
3.40
0.126
0.130
0.134
D1
2.15
2.25
2.35
0.085
0.089
0.093
E
3.20
3.30
3.40
0.126
0.130
0.134
E1
1.60
1.70
1.80
0.063
0.067
0.071
e
0.65 bsc.
0.026 bsc.
K
0.76 ref.
0.030 ref.
K1
L
0.41 ref.
0.33
Z
0.43
0.525 ref.
0.014
0.016 ref.
0.53
0.013
0.017
0.021
0.021 ref.
ECN: C20-0862-Rev. B, 20-Jul-2020
DWG: 6008
Revision: 20-Jul-2020
Document Number: 63919
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single
0.152
(3.860)
0.039
0.068
(0.990)
(1.725)
0.010
(0.255)
(2.390)
0.094
0.088
(2.235)
0.016
(0.405)
0.026
(0.660)
0.025
0.030
(0.635)
(0.760)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72597
Revision: 21-Jan-08
www.vishay.com
7
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Disclaimer
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Revision: 01-Jan-2022
1
Document Number: 91000
