SiSS72DN
www.vishay.com
Vishay Siliconix
N-Channel 150 V (D-S) MOSFET
FEATURES
PowerPAK® 1212-8S
D
D
D 6 7
5
3.
3
• TrenchFET® with ThunderFET technology
optimizes balance of RDS(on), Qg, Qsw, and Qoss
D
8
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
m
m
1
3.3
mm
Top View
4
G
Bottom View
3
S
2
S
1
S
APPLICATIONS
• Primary side switching
• Synchronous rectification
• DC/DC converter
PRODUCT SUMMARY
VDS (V)
RDS(on) max. () at VGS = 10 V
Qg typ. (nC)
ID (A)
Configuration
D
G
• Motor drive control
150
0.042
8.5
25.5 a
Single
• Load switch
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK 1212-8S
SiSS72DN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed drain current (t = 100 μs)
SYMBOL
LIMIT
VDS
VGS
150
± 20
25.5
20.4
7 b, c
5.6 b, c
50
54.8
4.2 b, c
20
20
65.8
42.1
5.1 b, c
3.2 b, c
-55 to +150
260
ID
IDM
Continuous source-drain diode current
TC = 25 °C
TA = 25 °C
IS
Single pulse avalanche current
Single pulse avalanche energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
TC = 70 °C
Maximum power dissipation
TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature) c
PD
TJ, Tstg
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
t 10 s
RthJA
20
25
Maximum junction-to-ambient b
°C/W
1.5
1.9
Maximum junction-to-case (drain)
Steady state
RthJC
Notes
a. TC = 25 °C
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 65 °C/W
S18-0559-Rev. A, 04-Jun-2018
Document Number: 78224
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSS72DN
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
Static
Drain-source breakdown voltage
VDS
VGS = 0 V, ID = 250 μA
150
-
-
VDS/TJ
ID = 250 mA
-
92
-
VGS(th) temperature coefficient
VGS(th)/TJ
ID = 250 μA
-
-7.1
-
Gate-source threshold voltage
VDS temperature coefficient
mV/°C
VGS(th)
VDS = VGS, ID = 250 μA
2
-
4
V
Gate-source leakage
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
100
nA
Zero gate voltage drain current
IDSS
On-state drain current a
Drain-source on-state resistance
a
Forward transconductance a
VDS = 150 V, VGS = 0 V
-
-
1
VDS = 150 V, VGS = 0 V, TJ = 70 °C
-
-
15
ID(on)
VDS 10 V, VGS = 10 V
20
-
-
A
RDS(on)
VGS = 10 V, ID = 7 A
-
0.035
0.042
gfs
VDS = 15 V, ID = 7 A
-
16
-
S
-
550
-
-
120
-
-
6
-
-
10.85
22
-
8.5
13
-
3
-
-
3
-
μA
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
VDS = 75 V, VGS = 0 V, f = 1 MHz
VDS = 75 V, VGS = 10 V, ID = 7 A
VDS = 75 V, VGS = 7.5 V, ID = 7 A
Gate-source charge
Qgs
Gate-drain charge
Qgd
Output charge
Qoss
VDS = 75 V, VGS = 0 V
-
27.7
42
Gate resistance
Rg
f = 1 MHz
0.24
1.2
2.4
-
18
36
-
6
12
-
30
60
tf
-
9
18
td(on)
-
20
40
-
8
16
-
25
50
-
11
22
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
tr
td(off)
VDD = 75 V, RL = 13.4 , ID 5.6 A,
VGEN = 10 V, Rg = 1
VDD = 75 V, RL = 13.4 , ID 5.6 A,
VGEN = 7.5 V, Rg = 1
tf
pF
nC
ns
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulse diode forward current
ISM
Body diode voltage
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
TC = 25 °C
IS = 5.6 A, VGS = 0 V
IF = 5.6 A, di/dt = 100 A/μs,
TJ = 25 °C
-
-
54.8
-
-
50
-
0.8
1.2
-
60
120
ns
-
133
266
nC
-
50
-
-
10
-
A
V
ns
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S18-0559-Rev. A, 04-Jun-2018
Document Number: 78224
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSS72DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50
50
45
VGS = 10 V thru 7 V
40
35
2nd line
ID - Drain Current (A)
VGS = 6 V
30
25
20
15
VGS = 5 V
10
30
TC = 125 °C
20
TC = 25 °C
10
5
VGS = 4 V
0
TC = -55 °C
0
0
1
2
3
4
0
5
2
4
Output Characteristics
Transfer Characteristics
Axis Title
Axis Title
1000
VGS = 10 V
0.028
100
2nd line
C - Capacitance (pF)
0.056
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
10 000
10000
0.014
0
10
20
30
40
10000
Ciss
1000
1000
Coss
100
100
Crss
10
1
10
0
50
10
0
30
60
90
120
ID - Drain Current (A)
2nd line
VDS - Drain-to-Source Voltage (V)
2nd line
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
2.4
8
VDS = 75 V
1000
1st line
2nd line
6
VDS = 120 V
4
100
2
0
10
0
3
6
9
12
10000
VGS = 10 V, ID = 7 A
2.0
1000
1.6
1st line
2nd line
VDS = 37.5 V
2nd line
RDS(on) - On-Resistance (Normalized)
10000
ID = 7 A
150
Axis Title
Axis Title
10
2nd line
VGS - Gate-to-Source Voltage (V)
8
VGS - Gate-to-Source Voltage (V)
2nd line
0.070
0.042
6
VDS - Drain-to-Source Voltage (V)
2nd line
1st line
2nd line
2nd line
ID - Drain Current (A)
40
1.2
100
0.8
0.4
10
-50
-25
0
25
50
75
100 125 150
Qg - Total Gate Charge (nC)
2nd line
TJ - Junction Temperature (°C)
2nd line
Gate Charge
On-Resistance vs. Junction Temperature
S18-0559-Rev. A, 04-Jun-2018
Document Number: 78224
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSS72DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
ID = 250 μA
3.2
2nd line
VGS(th) (V)
1000
TJ = 150 °C
1
TJ = 25 °C
1000
2.9
1st line
2nd line
10
1st line
2nd line
2nd line
IS - Source Current (A)
3.5
10000
100
2.6
100
100
0.1
2.3
0.01
2.0
10
0
0.3
0.6
0.9
10
-50
1.2
-25
0
25
75
100 125 150
VSD - Source-to-Drain Voltage (V)
2nd line
TJ - Temperature (°C)
2nd line
Source-Drain Diode Forward Voltage
Threshold Voltage
Axis Title
Axis Title
0.15
500
10000
10000
400
0.12
1000
1000
2nd line
Power (W)
TJ = 150 °C
0.06
300
1st line
2nd line
0.09
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
50
200
100
TJ = 25 °C
100
0.03
100
0
0
0.0001
10
4
6
8
10
10
0.001
0.01
0.1
1
10
VGS - Gate-to-Source Voltage (V)
2nd line
Time (s)
2nd line
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
IDM limited
100
10000
Limited by RDS(on) (1)
100 μs
1 ms
1
1000
10 ms
1st line
2nd line
2nd line
ID - Drain Current (A)
10
100 ms
0.1
10 s, 1 s
100
DC
0.01
TA = 25 °C
Single pulse
0.001
0.1
(1)
1
BVDSS limited
10
100
10
1000
VDS - Drain-to-Source Voltage (V)
VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S18-0559-Rev. A, 04-Jun-2018
Document Number: 78224
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSS72DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
10000
21
1000
1st line
2nd line
2nd line
ID - Drain Current (A)
28
14
100
7
0
10
0
25
50
75
100
125
150
TC - Case Temperature (°C)
2nd line
Current Derating a
Axis Title
Axis Title
80
10000
2.5
64
10000
2.0
1.5
1st line
2nd line
32
2nd line
Power (W)
1000
1st line
2nd line
2nd line
Power (W)
1000
48
1.0
100
16
100
0.5
0
10
0
25
50
75
100
125
150
0
10
0
25
50
75
100
125
TC - Case Temperature (°C)
2nd line
TA - Ambient Temperature (°C)
2nd line
Power, Junction-to-Case
Power, Junction-to-Ambient
150
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S18-0559-Rev. A, 04-Jun-2018
Document Number: 78224
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSS72DN
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
10000
Duty Cycle = 0.5
Notes:
0.2
PDM
0.1
0.1
1000
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
1
t1
0.05
t2
t
1. Duty cycle, D = t1
2
2. Per unit base = RthJA = 63 °C/W
0.02
Single pulse
3. TJM - TA = PDMZthJA
100
(t)
4. Surface mounted
0.01
0.0001
0.001
0.01
0.1
1
10
100
10
1000
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
10000
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
1000
1st line
2nd line
0.1
0.05
100
0.02
Single pulse
0.11
0.0001
10
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?78224.
S18-0559-Rev. A, 04-Jun-2018
Document Number: 78224
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
Case Outline for PowerPAK® 1212-8S
A
0.10 C
2x
D
8
7
Z
6
5
D1
5
6
b
4
3
7
8
2
1
K1
E1
E
K
B
L
0.10 C
1
2x
2
3
4
Pin 1 dot
e
0.10 M C A B
0.05 M C
0.10 C
C
A
A3
0.08 C
A1
A
MIN.
0.67
MILLIMETERS
NOM.
0.75
MAX.
0.83
MIN.
0.026
INCHES
NOM.
0.030
MAX.
0.033
A1
0.00
-
0.05
0.000
-
0.002
DIM.
A3
0.20 ref.
0.008 ref
b
0.25
0.30
0.35
0.010
0.012
D
3.20
3.30
3.40
0.126
0.130
0.134
D1
2.15
2.25
2.35
0.085
0.089
0.093
E
3.20
3.30
3.40
0.126
0.130
0.134
E1
1.60
1.70
1.80
0.063
0.067
0.071
e
0.65 bsc.
0.026 bsc.
K
0.76 ref.
0.030 ref.
K1
L
0.41 ref.
0.33
Z
0.43
0.525 ref.
0.014
0.016 ref.
0.53
0.013
0.017
0.021
0.021 ref.
ECN: C20-0862-Rev. B, 20-Jul-2020
DWG: 6008
Revision: 20-Jul-2020
Document Number: 63919
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single
0.152
(3.860)
0.039
0.068
(0.990)
(1.725)
0.010
(0.255)
(2.390)
0.094
0.088
(2.235)
0.016
(0.405)
0.026
(0.660)
0.025
0.030
(0.635)
(0.760)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72597
Revision: 21-Jan-08
www.vishay.com
7
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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Revision: 09-Jul-2021
1
Document Number: 91000
