SISS98DN-T1-GE3

SiSS98DN www.vishay.com Vishay Siliconix N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () (MAX.) ID (A) a 0.105 at VGS = 10 V 14.1 0.110 at VGS = 7.5 V 13.8 Qg (TYP.) 9.3 nC • ThunderFET® power MOSFET • Optimized Qg and Qoss improve efficiency • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PowerPAK® 1212-8S D D D 7 8 D 6 5 APPLICATIONS D • Primary side switching • Synchronous rectification 3. 3 m m 1 m 3m 3. Top View 4 G Bottom View 2 S 3 S 1 S • DC/DC converters G • Boost converters S Ordering Information:  SiSS98DN-T1-GE3 (lead (Pb)-free and halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 200 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C 14.1 TC = 70 °C 11.2 TA = 25 °C ID Continuous Source-Drain Diode Current 3.2 b, c Single Pulse Avalanche Current Single Pulse Avalanche Energy IDM TC = 25 °C TA = 25 °C L = 0.1 mH TC = 70 °C TA = 25 °C 14.1 IS 4.3 b, c IAS 10 EAS 5 mJ 57 36 PD W 4.8 b, c 3 b, c TA = 70 °C Operating Junction and Storage Temperature Range A 30 TC = 25 °C Maximum Power Dissipation V 4.1 b, c TA = 70 °C Pulsed Drain Current (t = 100 μs) UNIT TJ, Tstg -55 to +150 Soldering Recommendations (Peak Temperature) d, e °C 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM Maximum Junction-to-Ambient b, f t  10 s RthJA 21 26 Maximum Junction-to-Case (Drain) Steady State RthJC 1.7 2.2 UNIT °C/W Notes a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 70 °C/W. S16-0992-Rev. A, 23-May-16 Document Number: 66781 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS98DN www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 200 - - V - 186 - - -6 - Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage ID = 250 μA mV/°C VGS(th) VDS = VGS, ID = 250 μA 2 - 4 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 200 V, VGS = 0 V - - 1 V= 200 V, VDS GS = 0 V, TJ = 70 °C - - 10 On-State Drain Current a ID(on) VDS  5 V, VGS = 10 V 15 - - VGS = 10 V, ID = 7 A - 0.085 0.105 VGS = 7.5 V, ID = 7 A - 0.089 0.110 VDS = 10 V, ID = 7 A - 16.5 - - 608 - - 57 - - 7 - - 12.1 18.2 - 9.3 14 - 2.9 - - 2.9 - Drain-Source On-State Resistance a Forward Transconductance a Dynamic RDS(on) gfs μA A  S b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Output Charge Qoss VDS = 100 V, VGS = 0 V - 19.5 - Rg f = 1 MHz 0.6 1.9 3.5 - 8 16 - 16 32 - 16 32 tf - 16 32 td(on) - 10 20 - 17 34 - 14 28 - 16 32 - - 14.1 - - 30 Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDS = 100 V, VGS = 0 V, f = 1 MHz V = 100 V, VGS = 10 V, ID = 3 A VDS = 100 V, VGS = 7.5 V, ID = 3 A td(on) tr td(off) tr td(off) VDD = 100 V, RL = 33.3  ID  3 A, VGEN = 10 V, Rg = 1  VDD = 100 V, RL = 33.3  ID  3 A, VGEN = 7.5 V, Rg = 1  tf pF nC  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current (t = 100 μs) ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C IS = 5 A IF = 5 A, dI/dt = 100 A/μs, TJ = 25 °C A - 0.82 1.1 V - 89 178 ns - 258 516 nC - 72 - - 17 - ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing.    Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-0992-Rev. A, 23-May-16 Document Number: 66781 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS98DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 50 35 10000 10000 VGS = 10 V thru 7 V 20 VGS = 5 V 100 1000 21 1st line 2nd line 1000 30 2nd line ID - Drain Current (A) 28 VGS = 6 V 1st line 2nd line 14 TC = 25 °C 7 10 TC = 125 °C VGS = 4 V 0 3 6 9 12 TC = -55 °C 0 10 0 10 0 15 2 4 8 VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics Axis Title 10 Axis Title 1100 10000 10000 880 0.12 100 VGS = 10 V 0.06 440 100 220 0 10 20 30 40 Coss Crss 0 10 0 50 10 0 20 40 60 80 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current Capacitance 3.0 ID = 3 A VDS = 100 V 1000 VDS = 150 V 1st line 2nd line VDS = 50 V 6 4 100 2 0 10 3 6 9 12 15 2nd line RDS(on) - On-Resistance (Normalized) 10000 8 100 Axis Title Axis Title 10 0 1000 Ciss 660 1st line 2nd line 1000 VGS = 7.5 V 0.18 2nd line C - Capacitance (pF) 0.24 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 6 VDS - Drain-to-Source Voltage (V) 2nd line 0.3 2nd line VGS - Gate-to-Source Voltage (V) 100 10000 ID = 7 A 2.5 VGS = 10 V 1000 2.0 VGS = 7.5 V 1.5 100 1.0 0.5 10 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature S16-0992-Rev. A, 23-May-16 1st line 2nd line 2nd line ID - Drain Current (A) 40 Document Number: 66781 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS98DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 0.5 10000 1000 1 TJ = 25 °C 0.1 100 0.01 0.4 1000 TJ = 125 °C 0.3 1st line 2nd line TJ = 150 °C 1st line 2nd line 2nd line IS - Source Current (A) 2nd line RDS(on) - On-Resistance (Ω) ID = 7 A 10 0.2 100 0.1 TJ = 25 °C 0.001 10 0 0.2 0.4 0.6 0.8 1.0 0 10 3 1.2 4 5 6 8 9 10 VSD - Source-to-Drain Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 0.5 100 10000 0.2 10000 80 1000 2nd line Power (W) 1000 -0.4 60 1st line 2nd line ID = 5 mA -0.1 1st line 2nd line 2nd line VGS(th) - Variance (V) 7 40 100 100 ID = 250 μA -0.7 20 -1.0 0 0.001 10 -50 -25 0 25 50 75 100 125 150 10 0.01 0.1 1 10 TJ - Temperature (°C) 2nd line Time (s) 2nd line Threshold Voltage Single Pulse Power, Junction-to-Ambient Axis Title 100 10000 IDM limited ID limited 100 μs 1000 1 1 ms 10 ms Limited by RDS(on) (1) 0.1 100 ms 100 1s 10 s DC 0.01 TA = 25 °C Single pulse 0.001 0.01 (1) 0.1 1st line 2nd line 2nd line ID - Drain Current (A) 10 BVDSS limited 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area S16-0992-Rev. A, 23-May-16 Document Number: 66781 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS98DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 16 10000 1000 9.6 1st line 2nd line 2nd line ID - Drain Current (A) 12.8 6.4 100 3.2 0 10 0 25 50 75 100 125 150 TC - Case Temperature (°C) 2nd line Current Derating a Axis Title Axis Title 70 10000 2.5 56 10000 2.0 1.5 1st line 2nd line 28 2nd line Power (W) 1000 1st line 2nd line 2nd line Power (W) 1000 42 1.0 100 14 100 0.5 0 10 0 25 50 75 100 125 150 0 10 0 25 50 75 100 125 TC - Case Temperature (°C) 2nd line TA - Ambient Temperature (°C) 2nd line Power, Junction-to-Case Power, Junction-to-Ambient 150 Note a. The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S16-0992-Rev. A, 23-May-16 Document Number: 66781 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS98DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 Duty Cycle = 0.5 Notes: 0.2 PDM 0.1 0.1 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 t1 0.05 t2 t 1. Duty cycle, D = t1 2 2. Per unit base = RthJA = 70 °C/W 0.02 3. TJM - TA = PDMZthJA 0.001 (t) 4. Surface mounted Single pulse 0.01 0.0001 100 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 10000 Duty Cycle = 0.5 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.2 0.1 100 0.05 0.02 Single pulse 0.1 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case                       Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?66781. S16-0992-Rev. A, 23-May-16 Document Number: 66781 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix Case Outline for PowerPAK® 1212-8S A 0.10 C 2x D 8 7 Z 6 5 D1 5 6 b 4 3 7 8 2 1 K1 E1 E K B L 0.10 C 1 2x 2 3 4 Pin 1 dot e 0.10 M C A B 0.05 M C 0.10 C C A A3 0.08 C A1 A MIN. 0.67 MILLIMETERS NOM. 0.75 MAX. 0.83 MIN. 0.026 INCHES NOM. 0.030 MAX. 0.033 A1 0.00 - 0.05 0.000 - 0.002 DIM. A3 0.20 ref. 0.008 ref b 0.25 0.30 0.35 0.010 0.012 D 3.20 3.30 3.40 0.126 0.130 0.134 D1 2.15 2.25 2.35 0.085 0.089 0.093 E 3.20 3.30 3.40 0.126 0.130 0.134 E1 1.60 1.70 1.80 0.063 0.067 0.071 e 0.65 bsc. 0.026 bsc. K 0.76 ref. 0.030 ref. K1 L 0.41 ref. 0.33 Z 0.43 0.525 ref. 0.014 0.016 ref. 0.53 0.013 0.017 0.021 0.021 ref. ECN: C20-0862-Rev. B, 20-Jul-2020 DWG: 6008 Revision: 20-Jul-2020 Document Number: 63919 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single 0.152 (3.860) 0.039 0.068 (0.990) (1.725) 0.010 (0.255) (2.390) 0.094 0.088 (2.235) 0.016 (0.405) 0.026 (0.660) 0.025 0.030 (0.635) (0.760) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72597 Revision: 21-Jan-08 www.vishay.com 7 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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