SIUD403ED-T1-GE3

SiUD403ED www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PowerPAK® 0806 Single • TrenchFET® Gen III p-channel power MOSFET D 3 0.4 mm • Ultra small 0.8 mm x 0.6 mm outline • Ultra thin 0.4 mm max. height • Typical ESD protection 1500 V (HBM) 0. 8 m m 1 0.6 mm Top View 2 S Bottom View • -1.5 V rated RDS(on) 1 G • 100% Rg tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -4.5 V RDS(on) max. () at VGS = -2.5 V RDS(on) max. () at VGS = -1.8 V RDS(on) max. () at VGS = -1.5 V Qg typ. (nC) ID (A) Configuration APPLICATIONS -20 1.25 1.7 2.7 4.4 0.64 -0.5 a, f Single S • Load switch • High speed switching • Power management in battery-operated, mobile and wearable devices G P-Channel MOSFET D ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Note • The lead finish is NiPdAu and classed as E4 finish PowerPAK 0806 SiUD403ED-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TA = 25 °C TA = 70 °C TA =25 °C TA = 70 °C Pulsed drain current (t = 100 μs) TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) c Continuous source-drain diode current LIMIT -20 ±8 -0.5 a, f -0.5 a, f -0.4 b -0.32 b -0.8 -0.5 a, f -0.37 b 1.25 a 0.8 a 0.37 b 0.24 b -55 to +150 260 ID IDM IS PD TJ, Tstg UNIT V A W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum junction-to-ambient a, d t5s RthJA Maximum junction-to-ambient b, e Notes a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s c. Refer to IPC / JEDEC® (J-STD-020), no manual or hand soldering d. Maximum under steady state conditions is 135 °C/W e. Maximum under steady state conditions is 400 °C/W f. Package limited S20-0847-Rev. C, 26-Oct-2020 TYPICAL 80 265 MAXIMUM 100 335 UNIT °C/W Document Number: 70731 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiUD403ED www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = -250 μA -20 - - - V -12.4 - - 1.6 - Static Drain-source breakdown voltage VDS temperature coefficient VDS/TJ VGS(th) temperature coefficient VGS(th)/TJ Gate-source threshold voltage VGS(th) Gate-source leakage IGSS Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a ID = -250 μA VDS = VGS, ID = -250 μA -0.4 - -0.9 VDS = 0 V, VGS = ± 4.5 V - - ± 0.5 VDS = 0 V, VGS = ± 8 V - - ±7 VDS = -20 V, VGS = 0 V - - -1 VDS = -20 V, VGS = 0 V, TJ = 55 °C - - -10 RDS(on) gfs VDS  -5 V, VGS = 0 V -0.5 - - VGS = -4.5 V, ID = -0.3 A - 1.01 1.25 VGS = -2.5 V, ID = -0.1 A - 1.4 1.7 VGS = -1.8 V, ID = -0.1 A - 2.1 2.7 VGS = -1.5 V, ID = -0.05 A - 2.8 4.4 VDS = -10 V, ID = -0.3 A - 0.6 - - 31 - - 8.1 - - 7 - mV/°C V μA μA A  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = -10 V, VGS = 0 V, f = 1 MHz VDS = -10 V, VGS = -8 V, ID = -0.3 A - 1.1 1.7 VDS = -10 V, VGS = -4.5 V, ID = -0.3 A - 0.64 1 - 0.13 - VDS = -10 V, VGS = -4.5 V, ID = -0.3 A pF nC - 0.1 - 15 74 150 - 7 15 - 21 40 - 11 20 tf - 11 20 td(on) - 2 5 - 18 40 - 10 20 - 10 20 - - -0.5 c - - -0.8 - -0.9 -1.2 V - 15 30 ns - 7.5 15 nC - 10.5 - - 4.5 - f = xx MHz td(on) tr td(off) tr td(off) VDD = -10 V, RL = 33.3 , ID  -0.3 A, VGEN = -4.5 V, Rg = 1  VDD = -10 V, RL = 33.3 , ID  -0.3 A, VGEN = -8 V, Rg = 1  tf  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TA = 25 °C IS = -0.3 A, VGS = 0 V IF = -0.3 A, di/dt = 100 A/μs, TJ = 25 °C A ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing c. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s  Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S20-0847-Rev. C, 26-Oct-2020 Document Number: 70731 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiUD403ED www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 0.40 10-3 0.20 0.15 100 0.10 10-5 1000 TJ = 150 °C 1st line 2nd line 1000 TJ = 25 °C 0.25 2nd line IGSS - Gate Current (A) 10-4 0.30 1st line 2nd line 2nd line IGSS - Gate Current (mA) 0.35 10000 10-6 10-7 100 TJ = 25 °C 10-8 0.05 0.00 10-9 10 0 2 4 6 8 10 12 10 0 14 2 4 6 10 12 14 VGS - Gate-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage Axis Title Axis Title 1.5 1 10000 10000 VGS = 5 V thru 3.5 V TC = 25 °C 0.8 1st line 2nd line VGS = 2.5 V 0.6 100 VGS = 2 V 0.3 1000 0.6 1st line 2nd line 1000 VGS = 3 V 0.9 2nd line ID - Drain Current (A) 1.2 2nd line ID - Drain Current (A) 8 0.4 100 TC = 125 °C 0.2 TC = -55 °C VGS = 1.5 V 0 0 0.5 1 1.5 2 2.5 0 10 3 10 0 0.5 1 1.5 2 2.5 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics 3 Axis Title Axis Title 10000 6 50 10000 5 40 1000 4 3 VGS = 2.5 V 2 100 Ciss 20 100 Coss 10 1 VGS = 4.5 V Crss 0 10 0 0.2 0.4 0.6 0.8 1000 30 1st line 2nd line VGS = 1.8 V 2nd line C - Capacitance (pF) 2nd line RDS(on) - On-Resistance (Ω) VGS = 1.5 V 1 0 10 0 4 8 12 16 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current and Gate Voltage Capacitance S20-0847-Rev. C, 26-Oct-2020 20 Document Number: 70731 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiUD403ED www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 1000 4 VDS = 5 V 100 2 VDS = 16 V 0 2nd line RDS(on) - On-Resistance (Normalized) ID = 0.3 A 6 VDS = 10 V 0.2 0.4 0.6 0.8 1 1.3 VGS = 1.8 V VGS = 1.5 V 1.2 1.1 VGS = 1.2 V 100 0.9 0.8 10 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature Axis Title Axis Title 10000 TJ = 25 °C 0.1 100 0.01 0.4 0.6 0.8 1.0 TJ = 125 °C 1.5 1 100 TJ = 25 °C 0.5 10 0.2 1000 2 1st line 2nd line 1000 ID = 0.3 A 2.5 2nd line RDS(on) - On-Resistance (Ω) TJ = 150 °C 10000 3 1st line 2nd line 2nd line IS - Source Current (A) 1000 1.0 1.2 1 0 VGS = 4.5 V ID = 0.3 A 10 0 10000 1.4 1st line 2nd line 2nd line VGS - Gate-to-Source Voltage (V) 8 0 10 0 1.2 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title 4.0 10000 0.8 3.0 0.7 0.6 ID = 250 μA 0.5 0.4 -25 0 25 50 75 100 125 150 TJ - Temperature (°C) 2nd line Threshold Voltage S20-0847-Rev. C, 26-Oct-2020 2.0 100 1.0 10 -50 Power (W) 1st line 2nd line 2nd line VGS(th) (V) 1000 0.0 0.0001 0.001 0.01 0.1 1 Time (s) 10 100 1000 Single Pulse Power, Junction-to-Ambient Document Number: 70731 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiUD403ED www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 0.6 Package limited 1000 1st line 2nd line 2nd line ID - Drain Current (A) 0.8 0.4 100 0.2 0.0 10 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) 2nd line Current Derating a Axis Title 1.2 1 10000 IDM limited Power (W) 0.8 0.6 0.4 Limited by RDS(on) (1) 100 μs 1000 1 ms Id(on) limited 0.1 10 ms 10 s, 1 s, 100 ms 100 DC 0.2 TA = 25 °C Single pulse BVDSS limited 0.01 0 0 25 50 75 100 125 TA - Ambient Temperature (°C) Power, Junction-to-Ambient 150 Axis Title 2nd line ID - Drain Current (A) 1.0 10 0.1 (1) 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Note a. The power dissipation PD is based on TJ max. = 25 °C, using junction-to-ambient thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S20-0847-Rev. C, 26-Oct-2020 Document Number: 70731 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiUD403ED www.vishay.com Vishay Siliconix Normalized Effective Transient Thermal Impedance TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 Notes: PDM 0.1 0.2 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 135 °C/W 0.05 0.02 0.1 0.0001 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Ambient (on 1" x 1" FR4 board with maximum copper) 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 400 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient (on 1" x 1" FR4 board with minimum copper)                   Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70731. S20-0847-Rev. C, 26-Oct-2020 Document Number: 70731 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix Case Outline for PowerPAK 0.8 mm x 0.6 mm D C Pin 1 Indication E Top View Side View A A1 L D1 b e 2 3 E1 1 K Bottom View INCHES MILLIMETERS DIM. MIN. NOM. MAX. MIN. NOM. MAX. A 0.350 0.380 0.400 0.0138 0.0150 0.0157 A1 0 - 0.020 0 - 0.0008 b 0.120 0.150 0.180 0.0047 0.0059 0.0071 C 0.119 0.127 0.135 0.0047 0.0050 0.0053 D 0.750 0.800 0.850 0.0295 0.0315 0.0335 D1 0.200 0.250 0.300 0.0078 0.0098 0.0118 E 0.550 0.600 0.650 0.0217 0.0236 0.0256 E1 0.450 0.500 0.550 0.0177 0.0197 0.0217 e 0.300 0.350 0.400 0.0118 0.0138 0.0158 K 0.150 0.250 0.350 0.0058 0.0098 0.0138 L 0.200 0.250 0.300 0.0078 0.0098 0.0118 ECN: C13-1574-Rev. A, 23-Dec-13 DWG: 6020 Revision: 23-Dec-13 1 Document Number: 64254 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix Recommended Land Pattern PowerPAK® 0806 1 3 2 0.3 0.3 0.13 0.6 3 0.54 1 0.35 0.13 0.03 0.8 2 0.03 0.23 0.55 Revision: 25-Oct-2018 0.62 Document Number: 78035 1 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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