SIUD406ED-T1-GE3

SiUD406ED www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PowerPAK® 0806 Single • TrenchFET® power MOSFET D 3 0.4 mm • Ultra small 0.8 mm x 0.6 mm outline • Ultra thin 0.4 mm max. height • Typical ESD protection 1000 V (HBM) 0. 8 m m 1 0.6 mm Top View 2 S Bottom View • 100 % Rg tested 1 G • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Marking code: J • High speed switching PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 4.5 V RDS(on) max. () at VGS = 2.5 V RDS(on) max. () at VGS = 1.8 V Qg typ. (nC) ID (A) Configuration D • Load switch • DC/DC converters 30 1.46 1.66 1.85 0.4 0.5 a, f Single G • Battery-operated and mobile devices S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Note • The lead finish is NiPdAu and classed as E4 finish PowerPAK 0806 SiUD406ED-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current /TJ = 150 °C) SYMBOL VDS VGS TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) TA = 25 °C TA = 25 °C TA = 25 °C TA = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) c Continuous source-drain diode current LIMIT 30 ±8 0.5 a, f 0.5 a 0.37 b 0.29 b 0.8 0.5 a, f 0.31 b 1.25 a 0.8 a 0.37 b 0.24 b -55 to +150 260 ID IDM IS PD TJ, Tstg UNIT V A W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL t5s RthJA Maximum junction-to-ambient a, d Maximum junction-to-ambient b, e t5s RthJA Notes a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s c. Refer to IPC / JEDEC® (J-STD-020), no manual or hand soldering d. Maximum under steady state conditions is 135 °C/W e. Maximum under steady state conditions is 400 °C/W f. Package limited S20-0847-Rev. B, 26-Oct-2020 TYPICAL 80 265 MAXIMUM 100 335 UNIT °C/W Document Number: 75906 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiUD406ED www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 30 - - V - 28 - - -1.5 - Static Drain-source breakdown voltage VDS temperature coefficient VDS/TJ VGS(th) temperature coefficient VGS(th)/TJ Gate-source threshold voltage VGS(th) Gate-source leakage VDS = VGS, ID = 250 μA 0.4 - 1.1 VDS = 0 V, VGS = ± 4.5 V - - ± 0.5 VDS = 0 V, VGS = ± 8 V - - 10 VDS = 30 V, VGS = 0 V - - 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C - - 10 IGSS Zero gate voltage drain current On-state drain current ID = 250 μA a Drain-source on-state resistance a Forward transconductance a IDSS ID(on) RDS(on) gfs VDS  5 V, VGS = 4.5 V 0.5 - - VGS = 4.5 V, ID = 0.2 A - 1.17 1.46 VGS = 2.5 V, ID = 0.1 A - 1.24 1.66 VGS = 1.8 V, ID = 0.1 A - 1.37 1.85 VDS = 5 V, ID = 0.4 A - 1.2 - mV/°C V μA A  S Dynamic b - 17 - VDS = 15 V, VGS = 0 V, f = 1 MHz - 5 - - 2.5 - VDS = 15 V, VGS = 4.5 V, ID = 0.2 A - 0.4 0.6 - 0.04 - - 0.1 - 3 15 30 - 5 10 - 5 10 - 20 40 tf - 5 10 td(on) - 5 10 - 5 10 - 7 15 - 5 10 - - 0.5 c - - 0.8 - 0.88 1.2 V - 10 20 ns - 3 6 nC - 5 - - 5 - Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = 15 V, VGS = 4.5 V, ID = 0.2 A Rg f = 1 MHz td(on) tr td(off) tr td(off) VDD = 15 V, RL = 75 , ID  0.2 A, VGEN = 4.5 V, Rg = 1  VDD = 15 V, RL = 75 , ID  0.2 A, VGEN = 8 V, Rg = 1  tf pF nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TA = 25 °C IS = 0.2 A, VGS = 0 V IF = 0.2 A, di/dt = 100 A/μs, TJ = 25 °C A ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing c. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s  Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S20-0847-Rev. B, 26-Oct-2020 Document Number: 75906 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiUD406ED www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 0.008 10-4 10000 10000 TJ = 25 °C 0.004 100 0.002 TJ = 150 °C 10-6 10 1000 -7 1st line 2nd line 1000 2nd line IGSS - Gate Current (A) 0.006 1st line 2nd line 2nd line IGSS - Gate Current (mA) 10-5 TJ = 25 °C 10-8 100 10-9 10-10 10-11 10 0.000 0 2 4 6 8 10 12 14 10 0 2 4 6 8 10 12 14 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate-Current vs. Gate-Source Voltage Gate-Current vs. Gate-Source Voltage Axis Title Axis Title 10000 0.8 0.8 10000 0.4 VGS = 1.5 V 100 0.2 0.6 1000 1st line 2nd line 1000 2nd line ID - Drain Current (A) 0.6 1st line 2nd line 2nd line ID - Drain Current (A) VGS = 5 V thru 2 V 0.4 100 TC = 25 °C 0.2 0.5 1.0 1.5 2.0 2.5 10 0 10 0 0 3.0 0.5 1 1.5 2 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title Axis Title 4 10000 10000 25 2 VGS = 1.8 V 100 VGS = 4.5 V 1 Ciss 1000 15 1st line 2nd line 1000 VGS = 2.5 V 2nd line C - Capacitance (pF) 20 3 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) TC = -55 °C TC = 125 °C VGS = 1 V 0 10 5 10 0 0 0.2 0.4 0.6 0.8 100 Coss Crss 10 0 0 5 10 15 20 25 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance S20-0847-Rev. B, 26-Oct-2020 30 Document Number: 75906 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiUD406ED www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 1000 4 VDS = 7.5 V VDS = 24 V 100 2 2nd line RDS(on) - On-Resistance (Normalized) 6 1st line 2nd line 2nd line VGS - Gate-to-Source Voltage (V) ID = 0.2 A VDS = 15 V 10 0 0 0.2 0.4 0.6 10000 2.0 10000 ID = 0.2 A VGS = 4.5 V, 2.5 V 1.7 1000 1.4 1st line 2nd line 8 VGS = 1.8 V 1.1 100 0.8 10 0.5 0.8 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Axis Title Axis Title 10000 10 10000 3 TJ = 25 °C 100 0.1 10 0.01 0 0.2 0.4 0.6 0.8 1.0 2 1.5 1 100 TJ = 25 °C 0.5 10 0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 10000 0.70 10000 4.0 0.65 3.5 0.60 0.50 0.45 ID = 250 μA 100 2.0 1.5 0.40 1.0 0.35 0.5 10 0.30 -50 -25 0 25 50 75 100 125 150 1000 2.5 1st line 2nd line 0.55 2nd line P - Power (W) 3.0 1000 1st line 2nd line 2nd line VGS(th) - Variance (V) 1000 TJ = 125 °C 1st line 2nd line 1000 TJ = 150 °C 2nd line RDS(on) - On-Resistance (Ω) 1 1st line 2nd line 2nd line IS - Source Current (A) 2.5 100 0.0 0.001 10 0.01 0.1 1 10 TJ - Junction Temperature (°C) t - Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient S20-0847-Rev. B, 26-Oct-2020 Document Number: 75906 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiUD406ED www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 0.6 1000 1st line 2nd line 2nd line ID - Drain Current (A) 0.8 Package limited 0.4 100 0.2 10 0 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Current Derating a, b Axis Title ID(ON) limited 10000 1.2 Axis ITitle DM limited 1 10000 0.6 100 0.4 1 ms 0.1 10 ms 100 ms, 1 s, 10100 s DC 0.2 TA = 25 °C, single pulse 10 0 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient 1000 Limited by RDS(on)c 1st line 2nd line 1000 0.8 2nd line ID - Drain Current (A) 100 μs 1st line 2nd line 2nd line P - Power (W) 1.0 BVDSS limited 10 0.01 1 10 100 VDS - Drain-to-Source Voltage (V) a Safe Operating Area, Junction-to-Ambient Notes a. When mounted on 1" x 1" FR4 with full copper b. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-ambient thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit c. VGS > minimum VGS at which RDS(on) is specified S20-0847-Rev. B, 26-Oct-2020 Document Number: 75906 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiUD406ED www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 1 10000 Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 Notes 1000 0.2 1st line 2nd line PDM t1 0.1 t2 t1 1. Duty cycle, D = t 2 2. Per unit base = RthJA = 135 °C/W 0.05 3. TJM - TA = PDMZthJA 0.02 0.001 (t) 4. Surface mounted Single pulse 0.1 0.0001 100 0.01 0.1 1 10 10 1000 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient (on 1" x 1" FR4 board with maximum copper) Axis Title 1 10000 0.2 Notes 0.1 PDM 1000 0.1 0.05 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 t1 t2 t1 1. Duty cycle, D = t 2 2. Per unit base = RthJA = 400 °C/W 0.02 3. TJM - TA = PDMZthJA Single pulse 100 (t) 4. Surface mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient (on 1" x 1" FR4 board with minimum copper)                     Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75906. S20-0847-Rev. B, 26-Oct-2020 Document Number: 75906 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix Case Outline for PowerPAK 0.8 mm x 0.6 mm D C Pin 1 Indication E Top View Side View A A1 L D1 b e 2 3 E1 1 K Bottom View INCHES MILLIMETERS DIM. MIN. NOM. MAX. MIN. NOM. MAX. A 0.350 0.380 0.400 0.0138 0.0150 0.0157 A1 0 - 0.020 0 - 0.0008 b 0.120 0.150 0.180 0.0047 0.0059 0.0071 C 0.119 0.127 0.135 0.0047 0.0050 0.0053 D 0.750 0.800 0.850 0.0295 0.0315 0.0335 D1 0.200 0.250 0.300 0.0078 0.0098 0.0118 E 0.550 0.600 0.650 0.0217 0.0236 0.0256 E1 0.450 0.500 0.550 0.0177 0.0197 0.0217 e 0.300 0.350 0.400 0.0118 0.0138 0.0158 K 0.150 0.250 0.350 0.0058 0.0098 0.0138 L 0.200 0.250 0.300 0.0078 0.0098 0.0118 ECN: C13-1574-Rev. A, 23-Dec-13 DWG: 6020 Revision: 23-Dec-13 1 Document Number: 64254 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix Recommended Land Pattern PowerPAK® 0806 1 3 2 0.3 0.3 0.13 0.6 3 0.54 1 0.35 0.13 0.03 0.8 2 0.03 0.23 0.55 Revision: 25-Oct-2018 0.62 Document Number: 78035 1 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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