SIZ250DT-T1-GE3

SiZ250DT www.vishay.com Vishay Siliconix Dual N-Channel 60 V (D-S) MOSFETs FEATURES PowerPAIR® 3 x 3S • TrenchFET® Gen IV power MOSFETs G S2 2 S S2 2 7 8 6 5 • 100 % Rg and UIS tested D2 S 1/ 9) (Pin • Optimized Qgs/Qgs ratio improves switching characteristics D1 3.3 mm 1 3.3 1 2 G1 3 D 4 D1 1 D1 mm Top View Bottom View APPLICATIONS PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 CHANNEL-1 CHANNEL-2 60 0.01220 0.01811 6.2 60 0.01270 0.01887 6.4 38 38 ID (A) a Configuration D1 • CPU core power • Computer / server peripherals G1 • POL N-Channel 1 MOSFET S1/D2 • Synchronous buck converter G2 • Telecom DC/DC N-Channel 2 MOSFET Dual S2 ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAIR 3 x 3S SiZ250DT-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (100 μs pulse width) ID IDM Continuous source drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS Maximum power dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Operating junction and storage temperature range Soldering recommendations (peak temperature) d TJ, Tstg CHANNEL-1 CHANNEL-2 60 60 ± 20 ± 20 38 a 38 a 31 30 14 b, c 14 b, c 11 b, c 11 b, c 80 80 27 27 3.6 b, c 3.6 b, c 15 15 11 11 33 33 21 21 4.3 b, c 4.3 b, c 2.8 b, c 2.8 b, c -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL CHANNEL-1 CHANNEL-2 TYP. 23 3 TYP. 23 3 MAX. 29 3.8 MAX. 29 3.8 UNIT t ≤ 10 s RthJA Maximum junction-to-ambient b, f °C/W Maximum junction-to-case (drain) Steady state RthJC Notes a. TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR 3 x 3S is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 64 °C/W for channel-1 and 64 °C/W for channel-2 S19-1100-Rev. B, 30-Dec-2019 Document Number: 77227 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ250DT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS Temperature coefficient VGS(th) Temperature coefficient Gate threshold voltage Gate source leakage Zero gate voltage drain current On-state drain current b Drain-source on-state resistance b Forward transconductance b VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 μA Ch-1 60 - - VGS = 0 V, ID = 250 μA Ch-2 60 - - ID = 10 mA Ch-1 - 31 ID = 10 mA Ch-2 - 33 - ID = 250 μA Ch-1 - -4.8 - ID = 250 μA Ch-2 - -5.1 - VDS = VGS, ID = 250 μA Ch-1 1.1 - 2.4 VDS = VGS, ID = 250 μA Ch-2 1.1 - 2.4 VDS = 0 V, VGS = ± 20 V Ch-1 - - ± 100 VDS = 0 V, VGS = ± 20 V Ch-2 - - ± 100 1 VDS = 60 V, VGS = 0 V Ch-1 - - VDS = 60 V, VGS = 0 V Ch-2 - - 1 VDS = 60 V, VGS = 0 V, TJ = 55 °C Ch-1 - - 5 VDS = 60 V, VGS = 0 V, TJ = 55 °C Ch-2 - - 5 VDS ≥ 5 V, VGS = 10 V Ch-1 10 - - VDS ≥ 5 V, VGS = 10 V Ch-2 10 - - VGS = 10 V, ID = 10 A Ch-1 - 0.01007 0.01220 VGS = 10 V, ID = 10 A Ch-2 - 0.01030 0.01270 VGS = 4.5 V, ID = 7 A Ch-1 - 0.01370 0.01811 VGS = 4.5 V, ID = 7 A Ch-2 - 0.01420 0.01887 VDS = 10 V, ID = 30 A Ch-1 - 40 - VDS = 10 V, ID = 30 A Ch-2 - 45 - Ch-1 - 840 - V mV/°C V nA μA A Ω S Dynamic a Input capacitance Ciss Output capacitance Coss Channel-1 VDS = 30 V, VGS = 0 V, f = 1 MHz Reverse transfer capacitance Crss Channel-2 VDS = 30 V, VGS = 0 V, f = 1 MHz Crss/Ciss ratio VDS = 30 V, VGS = 10 V, ID = 10 A Total gate charge Qg - 206 - Ch-1 - 11 - Ch-2 - 11 - Ch-1 - 0.013 0.026 Ch-2 - 0.014 0.028 Ch-1 - 13.5 21 - 13.4 21 - 6.2 9.3 VDS = 30 V, VGS = 4.5 V, ID = 10 A Ch-2 - 6.4 9.6 Ch-1 - 3.2 - Ch-2 - 2.7 - Ch-1 - 1.7 - Ch-2 - 1.7 - Ch-1 - 13 - Qgd Channel-2 VDS = 30 V, VGS = 4.5 V, ID = 10 A S19-1100-Rev. B, 30-Dec-2019 - Ch-2 Ch-2 Gate-drain charge Rg - 210 Ch-1 Qgs Gate resistance 790 - VDS = 30 V, VGS = 10 V, ID = 10 A Gate-source charge Qoss - Ch-1 VDS = 30 V, VGS = 4.5 V, ID = 10 A Channel-1 VDS = 30 V, VGS = 4.5 V, ID = 10 A Output charge Ch-2 VDS = 30 V, VGS = 0 V f = 1 MHz Ch-2 - 13 - Ch-1 0.26 1.3 2.6 Ch-2 0.18 0.9 1.8 pF nC Ω Document Number: 77227 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ250DT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. Ch-1 - 11 24 Ch-2 - 11 20 Ch-1 - 6 12 Ch-2 - 6 12 Ch-1 - 23 45 Ch-2 - 23 45 Ch-1 - 5 10 Ch-2 - 5 10 Ch-1 - 22 44 UNIT Dynamic a Turn-on delay time td(on) Rise time Turn-off delay time tr td(off) Fall time Turn-on delay time Channel-2 VDD = 30 V, RL = 3 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω tf td(on) Rise time Turn-off delay time Channel-1 VDD = 30 V, RL = 3 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω tr td(off) Fall time Channel-1 VDD = 30 V, RL = 3 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω Channel-2 VDD = 30 V, RL = 3 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω tf Ch-2 - 22 44 Ch-1 - 60 120 Ch-2 - 50 100 Ch-1 - 22 44 Ch-2 - 24 48 Ch-1 - 7 15 Ch-2 - 12 24 Ch-1 - - 27 Ch-2 - - 27 Ch-1 - - 130 ns Drain-Source Body Diode Characteristics Continuous source-drain diode current Pulse diode forward current (t = 100 μs) Body diode voltage Body diode reverse recovery time IS ISM VSD Ch-2 - - 130 IS = 5 A, VGS = 0 V Ch-1 - 0.8 1.2 IS = 5 A, VGS = 0 V Ch-2 - 0.8 1.2 Ch-1 - 16 32 Ch-2 - 16 32 Ch-1 - 7 14 Ch-2 - 7 14 Ch-1 - 7.5 - Ch-2 - 8.5 - Ch-1 - 8.5 - Ch-2 - 7.5 - trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time TC = 25 °C tb Channel-1 IF = 5 A, di/dt = 100 A/μs, TJ = 25 °C Channel-2 IF = 5 A, di/dt = 100 A/μs, TJ = 25 °C A V ns nC ns Notes a. Guaranteed by design, not subject to production testing b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 77227 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 S19-1100-Rev. B, 30-Dec-2019 SiZ250DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 100.0 100 10000 TC = -55 °C 1000 60.0 40.0 100 VGS = 3 V 75 1000 TC = 125 °C 50 100 25 TC = 25 °C 20.0 1.0 2.0 3.0 0 4.0 1.5 3 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title VGS = 4.5 V 0.012 VGS = 10 V 100 2nd line C - Capacitance (pF) 1000 1st line 2nd line 10000 Ciss 1000 1000 Coss 100 100 Crss 10 0.006 0 20 40 60 80 10 1 10 0 0 100 15 30 45 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance Axis Title 60 Axis Title 10000 10000 ID = 10 A 8 1000 1st line 2nd line 6 VDS = 10 V, 30 V, 48 V 4 100 2 10 0 0 4 8 12 16 2nd line RDS(on) - On-Resistance (Normalized) 10 VGS = 10 V, 10 A 1.7 1000 1.3 VGS = 4.5 V, 7 A 100 0.9 10 0.5 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S19-1100-Rev. B, 30-Dec-2019 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 10 000 0.024 0.018 6 Axis Title 10000 0.030 2nd line VGS - Gate-to-Source Voltage (V) 4.5 1st line 2nd line 0 10 0 10 0 1st line 2nd line VGS = 4 V 2nd line ID - Drain Current (A) VGS = 10 V thru 5 V 1st line 2nd line 2nd line ID - Drain Current (A) 80.0 Document Number: 77227 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ250DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 0.04 10000 100 1000 TJ = 150 °C 1 100 TJ = 25 °C 0.1 0.01 0.03 1000 0.02 0.2 0.4 0.6 0.8 1.0 TJ = 125 °C 100 TJ = 25 °C 0.01 10 0 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 10 1st line 2nd line 2nd line IS - Source Current (A) ID = 10 A 10 0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 2.0 10000 50 10000 ID = 250 μA 1000 2nd line Power (W) 1.4 30 1st line 2nd line 1000 1st line 2nd line 2nd line VGS(th) (V) 40 1.7 20 100 100 1.1 10 0 0.001 10 0.8 -50 -25 0 25 50 75 0.01 0.1 100 125 150 1 10 100 10 1000 TJ - Junction Temperature (°C) Time (s) 2nd line Threshold Voltage Single Pulse Power, Junction-to-Ambient Axis Title 10000 100 10 Limited by RDS(on) 100 μs a 1000 1 ms 1 10 ms 1st line 2nd line 2nd line ID - Drain Current (A) IDM limited 100100 ms 0.1 10 s, 1 s TA = 25 °C, single pulse 0.01 0.01 DC BVDSS limited 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area, Junction-to-Ambient Note a. VGS > minimum VGS at which RDS(on) is specified S19-1100-Rev. B, 30-Dec-2019 Document Number: 77227 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ250DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 45 36 30 18 100 1st line 2nd line 27 2nd line Power (W) 1000 1000 1st line 2nd line 2nd line ID - Drain Current (A) 10000 40 20 100 10 9 0 10 0 0 25 50 75 100 125 150 10 0 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) 2nd line Current Derating a Power, Junction-to-Case 150 Note a. The power dissipation PD is based on TJ max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S19-1100-Rev. B, 30-Dec-2019 Document Number: 77227 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ250DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 1 10000 0.2 Notes: 0.1 PDM 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 64 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single pulse 0.01 0.0001 0.001 100 4. Surface Mounted 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 10000 Duty Cycle = 0.5 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.2 0.1 100 0.05 0.02 Single pulse 0.1 0.0001 10 0.001 0.01 0.1 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case S19-1100-Rev. B, 30-Dec-2019 Document Number: 77227 7 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ250DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 100.0 100 10000 TC = -55 °C VGS = 4 V 60.0 40.0 100 20.0 75 1000 TC = 125 °C 50 100 25 TC = 25 °C VGS = 3 V 0 1.0 2.0 3.0 10 0 10 0 0 4.0 1.5 3 6 Transfer Characteristics Output Characteristics Axis Title Axis Title 10000 0.030 10000 1000 0.024 VGS = 10 V 0.012 100 1000 100 Coss 1st line 2nd line 1000 VGS = 4.5 V 0.018 2nd line C - Capacitance (pF) Ciss 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 4.5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Crss 100 10 0.006 0 20 40 60 80 10 1 10 0 0 100 15 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance Axis Title 1st line 2nd line VDS = 10 V, 30 V, 48 V 4 100 2 10 0 6 9 12 15 VGS = 10 V, 10 A 1.5 1000 1st line 2nd line 1000 2nd line RDS(on) - On-Resistance (Normalized) 8 6 10000 1.8 ID = 10 A 3 60 Axis Title 10000 0 45 ID - Drain Current (A) 10 2nd line VGS - Gate-to-Source Voltage (V) 1st line 2nd line 1000 2nd line ID - Drain Current (A) VGS = 10 V thru 5 V 1st line 2nd line 2nd line ID - Drain Current (A) 80.0 1.2 VGS = 4.5 V, 7 A 10 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S19-1100-Rev. B, 30-Dec-2019 100 0.9 Document Number: 77227 8 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ250DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 0.05 10000 100 1000 TJ = 150 °C 1 100 TJ = 25 °C 0.1 0.01 0.04 1000 0.03 0.2 0.4 0.6 0.8 1.0 TJ = 125 °C 0.02 100 TJ = 25 °C 0.01 10 0 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 10 1st line 2nd line 2nd line IS - Source Current (A) ID = 10 A 10 0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 2.3 10000 50 10000 ID = 250 μA 1000 2nd line Power (W) 1.7 30 1st line 2nd line 1000 1st line 2nd line 2nd line VGS(th) (V) 40 2.0 20 100 100 1.4 10 0 0.001 10 1.1 -50 -25 0 25 50 75 0.01 0.1 100 125 150 1 10 100 10 1000 TJ - Junction Temperature (°C) Time (s) 2nd line Threshold Voltage Single Pulse Power, Junction-to-Ambient Axis Title 10000 100 10 Limited by RDS(on) 100 μs a 1000 1 ms 1 10 ms 1st line 2nd line 2nd line ID - Drain Current (A) IDM limited 100 100 ms 0.1 10 s, 1 s TA = 25 °C, single pulse 0.01 0.01 DC BVDSS limited 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area, Junction-to-Ambient Note a. VGS > minimum VGS at which RDS(on) is specified S19-1100-Rev. B, 30-Dec-2019 Document Number: 77227 9 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ250DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 45 36 30 18 100 1st line 2nd line 27 2nd line Power (W) 1000 1000 1st line 2nd line 2nd line ID - Drain Current (A) 10000 40 20 100 10 9 0 0 10 0 25 50 75 100 125 150 10 0 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) 2nd line Current Derating a Power, Junction-to-Case 150 Note a. The power dissipation PD is based on TJ max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S19-1100-Rev. B, 30-Dec-2019 Document Number: 77227 10 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ250DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 1 10000 0.2 Notes: 0.1 PDM 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 t1 t2 1. Duty Cycle, D = 0.05 0.02 t1 t2 100 2. Per Unit Base = RthJA = 64 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 10000 Duty Cycle = 0.5 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.2 0.1 100 0.05 0.02 Single pulse 0.1 0.0001 10 0.001 0.01 0.1 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77227. S19-1100-Rev. B, 30-Dec-2019 Document Number: 77227 11 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAIR® 3.3 x 3.3 Case Outline 0.1 C 0.08 C * Indicates pin #1 orientation (optional) A 2x L D 8 2 7 3 4 K2 D1 K1 D2 K * 8 1 2 6 6 3 5 5 4 2x 0.1 C E E1 7 b e 1 b1 A1 K3 C 0.1 C C DIM. MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.70 0.75 0.80 0.028 0.030 0.031 A1 0.00 - 0.05 0.000 - 0.002 b 0.35 0.40 0.45 0.014 0.016 0.018 b1 0.20 0.25 0.38 0.008 0.010 0.015 C 0.18 0.20 0.23 0.007 0.008 0.009 D 3.20 3.30 3.40 0.126 0.130 0.134 D1 0.86 0.91 0.96 0.034 0.036 0.038 D2 0.79 0.84 0.89 0.031 0.033 0.035 E 3.20 3.30 3.40 0.126 0.130 0.134 E1 2.65 2.70 2.75 0.104 0.106 0.108 e 0.65 BSC 0.026 BSC K 0.25 ref. 0.010 ref. K1 0.35 ref. 0.014 ref. K2 0.32 ref. 0.013 ref. K3 0.30 ref. L 0.27 0.32 0.012 ref. 0.37 0.011 0.013 0.015 C18-0564-Rev. A, 14-May-2018 DWG: 6066 Notes (1) Use millimeters as the primary measurement (2) Dimensioning and tolerances conform to ASME Y14.5M - 1994 (3) N is the number of terminals; Nd is the number of terminals in X-direction; Ne is the number of terminals in Y-direction (4) Dimension b applies to plated terminal and is measured between 0.20 mm and 0.25 mm from terminal tip (5) The pin # 1 identifier must be existed on the top surface of the package by using indentation mark or other feature of package body (6) Exact shape and size of this features is optional (7) Package warpage max. 0.08 mm (8) Applied only for terminals Revision: 14-May-2018 Document Number: 76654 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix Recommended Land Pattern for PowerPAIR® 3 x 3S BWL 1 8 2 7 3 6 4 5 3.30 0.935 1.005 0.25 0.59 0.27 0.44 0.675 0.32 0.25 0.2 8 7 3 6 4 5 0.65 2.80 2 0.25 0.675 0.65 3.30 0.65 1 0.30 0.62 Revision: 06-Aug-2020 Document Number: 78115 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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