SIZ300DT-T1-GE3

New Product SiZ300DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 a RDS(on) () ID (A) 0.0240 at VGS = 10 V 11 0.0320 at VGS = 4.5 V 11 0.0110 at VGS = 10 V 28 0.0165 at VGS = 4.5 V 28 Qg (Typ.) • PowerPAIR Optimizes High-Side and Low-Side MOSFETs for Synchronous Buck Converters • TrenchFET® Power Mosfets 3.5 nC • 100 % Rg and UIS Tested • Material categorization: For definitions of 6.8 nC compliance please see www.vishay.com/doc?99912 APPLICATIONS • Computing System Power • POL • Synchronous Buck Converter PowerPAIR® 3 x 3 Pin 1 G1 D1 1 3 m m D1 D1 2 D1 D1 8 G2 3 4 S1/D2 G1 (Pin 9) 7 S2 N-Channel 1 MOSFET 6 S2 5 S2 3 S1/D2 mm G2 N-Channel 2 MOSFET Ordering Information: SiZ300DT-T1-GE3 (Lead (Pb)-free and Halogen-free) S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Drain Current (TJ = 150 °C) ID IDM Pulsed Drain Current (t = 300 µs) TA = 25 °C TA = 25 °C Continuous Source Drain Diode Current Avalanche Current L = 0.1 mH Single Pulse Avalanche Energy TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Maximum Power Dissipation Operating Junction and Storage Temperature Range IS IAS EAS PD TJ, Tstg Channel-1 Channel-2 30 ± 20 11a 11a 9.8b, c 7.8b, c 30 V 28a 28a 14.9b, c 11.9b, c 40 26 11a 3.2b, c 12 Unit A 3.8b, c 15 7 11 16.7 10.7 31 20 3.7b, c 2.4b, c 4.2b, c 2.7b, c mJ W - 55 to 150 °C 260 Soldering Recommendations (Peak Temperature) Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. d, e Document Number: 67715 S12-1361-Rev. D, 11-Jun-12 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ300DT Vishay Siliconix THERMAL RESISTANCE RATINGS Channel-1 Parameter Symbol RthJA RthJC Typ. t  10 s 27 Maximum Junction-to-Ambienta, b Maximum Junction-to-Case (Drain) Steady State 6 Notes: a. Surface mounted on 1" x 1" FR4 board. b. Maximum under steady state conditions is 69 °C/W for channel-1 and 64 °C/W for channel-2. Channel-2 Max. Typ. Max. Unit 34 7.5 24 3.2 30 4 °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate Source Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0, ID = 250 µA Ch-1 30 VGS = 0 V, ID = 250 µA Ch-2 30 V ID = 250 µA Ch-1 ID = 250 µA Ch-2 30 ID = 250 µA Ch-1 - 4.1 24 mV/°C ID = 250 µA Ch-2 VDS = VGS, ID = 250 µA Ch-1 1 2.4 VDS = VGS, ID = 250 µA Ch-2 1 2.2 VDS = 0 V, VGS = ± 20 V -5 Ch-1 ± 100 Ch-2 ± 100 VDS = 30 V, VGS = 0 V Ch-1 1 VDS = 30 V, VGS = 0 V Ch-2 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C Ch-1 5 VDS = 30 V, VGS = 0 V, TJ = 55 °C Ch-2 VDS 5 V, VGS = 10 V Ch-1 10 VDS 5 V, VGS = 10 V Ch-2 10 V nA µA 5 A VGS = 10 V, ID = 9.8 A Ch-1 0.0200 0.0240 VGS = 10 V, ID = 15 A Ch-2 0.0090 0.0110 VGS = 4.5 V, ID = 8.5 A Ch-1 0.0265 0.0320 0.0135 0.0165 VGS = 4.5 V, ID = 12 A Ch-2 VDS = 15 V, ID = 9.8 A Ch-1 30 VDS = 15 V, ID = 15 A Ch-2 30 Ch-1 400 Ch-2 730 Ch-1 125 Ch-2 155 Ch-1 25  S Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Ciss Channel-1 VDS = 15 V, VGS = 0 V, f = 1 MHz Coss Crss Qg Channel-2 VDS = 15 V, VGS = 0 V, f = 1 MHz Ch-2 65 VDS = 15 V, VGS = 10 V, ID = 9.8 A Ch-1 7.4 VDS = 15 V, VGS = 10 V, ID = 15 A Ch-2 14.2 22 Ch-1 3.5 5.3 11 Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 9.8 A Ch-2 6.8 Ch-1 1.5 Channel-2 VDS = 15 V, VGS = 4.5 V, ID = 15 A Ch-2 2.2 Ch-1 1.1 Qgs Qgd Rg pF Ch-2 f = 1 MHz 12 nC 2.3 Ch-1 0.5 2.6 5.2 Ch-2 0.5 2.6 5.2  Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. www.vishay.com 2 For technical questions, contact: pmostechsupport@vishay.com Document Number: 67715 S12-1361-Rev. D, 11-Jun-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ300DT Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Ch-1 25 50 Ch-2 25 50 Ch-1 45 90 Ch-2 80 160 Ch-1 10 20 Ch-2 20 40 Ch-1 10 20 Ch-2 40 80 Ch-1 5 10 Ch-2 5 10 Ch-1 10 20 Ch-2 20 40 Ch-1 10 20 Ch-2 15 30 Ch-1 7 15 Ch-2 10 20 Unit Dynamica td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time td(on) Turn-On Delay Time tr Rise Time Fall Time Channel-2 VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 4.5 V, Rg = 1  Channel-1 VDD = 15 V, RL = 1.9  ID  8 A, VGEN = 10 V, Rg = 1  tf Channel-2 VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 10 V, Rg = 1  IS TC = 25 °C td(off) Turn-Off Delay Time Channel-1 VDD = 15 V, RL = 1.9  ID  8 A, VGEN = 4.5 V, Rg = 1  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current a ISM VSD Body Diode Voltage Ch-1 11 Ch-2 26 Ch-1 30 Ch-2 40 IS = 8 A, VGS = 0 V Ch-1 0.84 1.2 IS = 10 A, VGS = 0 V Ch-2 0.82 1.2 Ch-1 17 35 Ch-2 20 40 Ch-1 9 20 Ch-2 14 30 Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Channel-1 IF = 8 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Fall Time ta Channel-2 IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Rise Time tb A Ch-1 9.5 Ch-2 12.5 Ch-1 7.5 Ch-2 7.5 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 67715 S12-1361-Rev. D, 11-Jun-12 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ300DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 30 25 16 ID - Drain Current (A) ID - Drain Current (A) VGS = 10 V thru 4 V 20 15 10 12 8 TC = 125 °C 4 VGS = 3 V 5 TC = 25 °C TC = - 55 °C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 3.0 0.5 1.0 Output Characteristics 2.0 2.5 3.0 3.5 4.0 Transfer Characteristics 600 0.05 500 C - Capacitance (pF) 0.04 RDS(on) - On-Resistance (Ω) 1.5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) VGS = 4.5 V 0.03 0.02 VGS = 10 V Ciss 400 300 200 Coss 0.01 100 Crss 0 0 0 5 10 15 20 ID - Drain Current (A) 25 30 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 1.6 VDS = 15 V ID = 11 A 8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 30 6 VDS = 7.5 V VDS = 24 V 4 2 0 0 2 4 6 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 8 VGS = 10 V ID = 9.8 A 1.4 VGS = 4.5 V 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature For technical questions, contact: pmostechsupport@vishay.com Document Number: 67715 S12-1361-Rev. D, 11-Jun-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ300DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.06 0.05 RDS(on) - On-Resistance (Ω) IS - Source Current (A) TJ = 150 °C 10 TJ = 25 °C 1 ID = 9.8 A 0.04 TJ = 125 °C 0.03 0.02 TJ = 25 °C 0.01 0.1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage 2.4 50 2.2 40 2.0 30 1.8 Power (W) VGS(th) (V) Source-Drain Diode Forward Voltage 10 ID = 250 μA 20 10 1.6 1.4 0 - 50 - 25 0 25 50 75 100 125 0.001 150 0.01 0.1 TJ - Temperature (°C) Threshold Voltage 100 10 100 1000 Single Pulse Power Limited by RDS(on)* 10 ID - Drain Current (A) 1 Time (s) 100 μs 1 ms 1 10 ms 0.1 100 ms 1s 10 s TA = 25 °C Single Pulse DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 67715 S12-1361-Rev. D, 11-Jun-12 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ300DT Vishay Siliconix 25 20 20 16 15 12 Power (W) ID - Drain Current (A) CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Package Limited 10 8 4 5 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power, Junction-to-Case * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 For technical questions, contact: pmostechsupport@vishay.com Document Number: 67715 S12-1361-Rev. D, 11-Jun-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ300DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 69 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 67715 S12-1361-Rev. D, 11-Jun-12 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ300DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 40 35 VGS = 10 V thru 4 V 16 ID - Drain Current (A) ID - Drain Current (A) 30 25 20 VGS = 3 V 15 12 TC = 25 °C 8 10 TC = 125 °C 4 5 TC = - 55 °C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) 0 3.0 1 0.025 1000 0.020 800 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 3 4 Transfer Characteristics Output Characteristics VGS = 4.5 V 0.015 2 VGS - Gate-to-Source Voltage (V) 0.010 VGS = 10 V Ciss 600 400 Coss 200 0.005 Crss 0 0 0 10 20 30 0 40 10 15 20 25 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 30 1.8 10 VDS = 15 V ID = 11 A 8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 5 ID - Drain Current (A) 6 VDS = 7.5 V VDS = 24 V 4 2 VGS = 10 V ID = 15 A 1.6 1.4 VGS = 4.5 V 1.2 1.0 0.8 0.6 0 0 3 6 9 12 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 8 15 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature For technical questions, contact: pmostechsupport@vishay.com Document Number: 67715 S12-1361-Rev. D, 11-Jun-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ300DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.05 100 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 15 A 0.04 TJ = 150 °C 10 TJ = 25 °C 1 0.03 TJ = 125 °C 0.02 0.01 TJ = 25 °C 0.1 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage 2.0 50 1.8 40 1.6 30 1.4 Power (W) VGS(th) (V) Source-Drain Diode Forward Voltage 10 ID = 250 μA 20 10 1.2 0 1.0 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 150 0.001 0.01 Threshold Voltage 1 Time (s) 10 100 1000 Single Pulse Power 100 Limited by RDS(on)* 10 ID - Drain Current (A) 0.1 100 μs 1 ms 10 ms 1 100 ms 1s 10 s 0.1 TA = 25 °C Single Pulse DC BVDSS Limited 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 Safe Operating Area, Junction-to-Ambient Document Number: 67715 S12-1361-Rev. D, 11-Jun-12 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 9 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ300DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 50 40 40 Package Limited 30 Power (W) ID - Drain Current (A) 30 20 20 10 10 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power, Junction-to-Case * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 For technical questions, contact: pmostechsupport@vishay.com Document Number: 67715 S12-1361-Rev. D, 11-Jun-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiZ300DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 64 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 Single Pulse 0.02 0.1 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67715. Document Number: 67715 S12-1361-Rev. D, 11-Jun-12 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAIR® 3 x 3 Case Outline D 8 7 6 A A1 5 K2 D2 5 6 K2 7 8 E1 K L d 0.10 C 2X * 1 2 3 d 0.10 C 2X 0.10 4 0.15 4 3 2 1 e b b1 0.10 C A f E2 K1 E 9 Note * Indicates pin #1 orientation (optional) c C d 0.08 C MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. MAX. A 0.70 0.75 0.80 0.028 0.030 0.031 A1 0.00 0.05 0.000 b 0.35 0.40 0.45 0.014 0.016 0.018 b1 0.20 0.25 0.38 0.008 0.010 0.015 C 0.18 0.20 0.23 0.007 0.008 0.009 D 2.90 3.00 3.10 0.114 0.118 0.122 D2 2.35 2.40 2.45 0.093 0.094 0.096 E 2.90 3.00 3.10 0.114 0.118 0.122 E1 0.94 0.99 1.04 0.037 0.039 0.041 E2 0.47 0.52 0.57 0.019 0.020 0.022 e 0.002 0.65 BSC 0.026 BSC K 0.25 typ. 0.010 typ. K1 0.35 typ. 0.014 typ. K2 0.30 typ. L 0.27 0.32 0.012 typ. 0.37 0.011 0.013 0.015 ECN: T12-0347-Rev. C, 18-Jun-12 DWG: 5998 Revison: 18-Jun-12 1 Document Number: 67698 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern Vishay Siliconix RECOMMENDED MINIMUM PAD FOR PowerPAIR® 3 x 3 0.450 0.650 (0.018) (0.026) 0.450 (0.018) 1.036 2.450 (0.096) 0.084 (0.003) (0.041) 0.209 (0.008) 0.306 (0.012) 0.562 (0.022) (0.063) 1.611 0.390 (0.015) 1.200 (0.047) Recommended PAD for PowerPAIR 3 x 3 Dimensions in millimeters (inches) Keep-Out 3.5 mm x 3.5 mm for non terminating traces Document Number: 63294 Revision: 25-May-11 www.vishay.com 1 This document is subject to change without notice. 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