SIZ320DT-T1-GE3

SiZ320DT www.vishay.com Vishay Siliconix Dual N-Channel 25 V (D-S) MOSFETs FEATURES PowerPAIR® 3 x 3 G2 S2 8 S2 7 S2 6 5 S1/D2 • TrenchFET® Gen IV power MOSFETs • 100 % Rg and UIS tested • Optimized Qgs/Qgs ratio improves switching characteristics (Pin 9) D1 3 m m 1 3 1 2 G1 3 D1 4 D1 D1 Bottom View mm Top View APPLICATIONS PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a, g Configuration • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 CHANNEL-1 CHANNEL-2 25 0.00830 0.01270 4.3 30 25 0.00424 0.00658 7.9 40 D1 • CPU core power • Computer / server peripherals G1 • POL N-Channel 1 MOSFET S1/D2 • Synchronous buck converter G2 • Telecom DC/DC N-Channel 2 MOSFET Dual S2 ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAIR 3 x 3 SiZ320DT-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (100 μs pulse width) ID IDM Continuous source drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 100 mH IAS EAS Maximum power dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Operating junction and storage temperature range Soldering recommendations (peak temperature) d TJ, Tstg CHANNEL-1 CHANNEL-2 25 25 +16, -12 +16, -12 30 a 40 a 29.2 a 40 a b, c 17.2 24.8 b, c b, c 13.7 19.8 b, c 80 120 13.9 25.8 3.1 b, c 3.5 b, c 12 18 7.2 16.2 16.7 31 10.7 20 3.7 b, c 4.2 b, c 2.4 b, c 2.7 b, c -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL CHANNEL-1 CHANNEL-2 TYP. 27 6 TYP. 24 3.2 MAX. 34 7.5 MAX. 30 4 UNIT t  10 s RthJA Maximum junction-to-ambient b, f °C/W Maximum junction-to-case (drain) Steady state RthJC Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 69 °C/W for channel-1 and 64 °C/W for channel-2 g. TC = 25 °C S17-0302-Rev. A, 27-Feb-17 Document Number: 68279 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ320DT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS Temperature coefficient VGS(th) Temperature coefficient Gate threshold voltage Gate source leakage Zero gate voltage drain current On-state drain current b Drain-source on-state resistance b Forward transconductance b VGS = 0 V, ID = 250 μA Ch-1 25 - - VGS = 0 V, ID = 250 μA Ch-2 25 - - VDS/TJ ID = 250 μA Ch-1 - 17 - ID = 250 μA Ch-2 - 16 - VGS(th)/TJ ID = 250 μA Ch-1 - 4.2 - VDS VGS(th) IGSS IDSS ID(on) RDS(on) gfs ID = 250 μA Ch-2 - 4.5 - VDS = VGS, ID = 250 μA Ch-1 1.1 - 2.4 VDS = VGS, ID = 250 μA Ch-2 1.1 - 2.4 Ch-1 - - 100 Ch-2 - - 100 1 VDS = 0 V, VGS = +16 V, -12 V VDS = 25 V, VGS = 0 V Ch-1 - - VDS = 25 V, VGS = 0 V Ch-2 - - 1 VDS = 25 V, VGS = 0 V, TJ = 55 °C Ch-1 - - 10 VDS = 25 V, VGS = 0 V, TJ = 55 °C Ch-2 - - 10 VDS 5 V, VGS = 10 V Ch-1 15 - - VDS 5 V, VGS = 10 V Ch-2 15 - - VGS = 10 V, ID = 8 A Ch-1 - 0.00690 0.00830 VGS = 10 V, ID = 10 A Ch-2 - 0.00353 0.00424 VGS = 4.5 V, ID = 5 A Ch-1 - 0.01010 0.01270 VGS = 4.5 V, ID = 8 A Ch-2 - 0.00526 0.00658 VGS = 10 V, ID = 8 A Ch-1 - 45 - VGS = 10 V, ID = 10 A Ch-2 - 68 - Ch-1 - 660 - V mV/°C V nA μA A  S Dynamic a Input capacitance Ciss Output capacitance Coss Channel-1 VDS = 12.5 V, VGS = 10 V, f = 1 MHz Reverse transfer capacitance Crss Channel-2 VDS = 12.5 V, VGS = 10 V, f = 1 MHz Crss/Ciss ratio Total gate charge Qg Ch-2 - 1370 - Ch-1 - 230 - Ch-2 - 410 - Ch-1 - 35 - Ch-2 - 55 - Ch-1 - 0.056 0.115 Ch-2 - 0.04 0.08 VDS = 12.5 V, VGS = 10 V, ID = 15 A Ch-1 - 9.5 15 26.7 VDS = 12.5 V, VGS = 10 V, ID = 20 A Ch-2 - 17.8 VDS = 12.5 V, VGS = 4.5 V, ID = 15 A Ch-1 - 4.3 8.9 VDS = 12.5 V, VGS = 4.5 V, ID = 20 A Ch-2 - 7.9 11.9 Gate-source charge Qgs Channel-1 VDS = 12.5 V, VGS = 4.5 V, ID = 15 A Ch-1 - 1.8 - Ch-2 - 3.8 - Gate-drain charge Qgd Channel-2 VDS = 12.5 V, VGS = 4.5 V, ID = 20 A Ch-1 - 0.8 - Ch-2 - 1.2 - Ch-1 - 4.6 - Ch-2 - 8.1 - Ch-1 0.26 1.3 2.6 Ch-2 0.2 1 2 Output charge Gate resistance S17-0302-Rev. A, 27-Feb-17 Qoss Rg VDS = 12.5 V, VGS = 0 V f = 1 MHz pF nC  Document Number: 68279 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ320DT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. 20 UNIT Dynamic a Turn-on delay time td(on) Rise time Turn-off delay time tr td(off) Fall time Turn-on delay time Channel-2 VDD = 12.5 V, RL = 1.25  ID  10 A, VGEN = 10 V, Rg = 1  tf td(on) Rise time Turn-off delay time Channel-1 VDD = 12.5 V, RL = 1.25  ID  10 A, VGEN = 10 V, Rg = 1  tr td(off) Fall time Channel-1 VDD = 12.5 V, RL = 1.25  ID  10 A, VGEN = 4.5 V, Rg = 1  Channel-2 VDD = 12.5 V, RL = 1.25  ID  10 A, VGEN = 4.5 V, Rg = 1  tf Ch-1 - 8 Ch-2 - 12 24 Ch-1 - 28 45 Ch-2 - 26 40 Ch-1 - 15 25 Ch-2 - 20 30 Ch-1 - 10 20 Ch-2 - 10 20 Ch-1 - 15 25 Ch-2 - 22 35 Ch-1 - 80 120 Ch-2 - 35 53 Ch-1 - 10 20 Ch-2 - 10 20 Ch-1 - 38 57 Ch-2 - 17 26 Ch-1 - - 13.9 Ch-2 - - 25.8 Ch-1 - - 80 120 ns Drain-Source Body Diode Characteristics Continuous source-drain diode current Pulse diode forward current (t = 100 μs) Body diode voltage TC = 25 °C IS ISM VSD Ch-2 - - IS = 8 A, VGS = 0 V Ch-1 - 0.83 1.2 IS = 10 A, VGS = 0 V Ch-2 - 0.81 1.2 Ch-1 - 26 52 Ch-2 - 34 68 Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Channel-1 IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C Ch-1 - 26 52 Ch-2 - 30 60 Reverse recovery fall time ta Channel-2 IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C Ch-1 - 14 - Ch-2 - 18 - Ch-1 - 12 - Ch-2 - 16 - Reverse recovery rise time tb A V ns nC ns Notes a. Guaranteed by design, not subject to production testing b. Pulse test; pulse width  300 μs, duty cycle  2 % Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-0302-Rev. A, 27-Feb-17 Document Number: 68279 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ320DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 50 10000 80 10000 40 100 20 VGS = 3 V 1000 30 1st line 2nd line 1000 VGS = 4 V 2nd line ID - Drain Current (A) 40 60 1st line 2nd line 2nd line ID - Drain Current (A) VGS = 10 V thru 5 V TC = 25 °C 20 100 10 TC = 125 °C 0 0 10 0 0.4 0.8 1.2 1.6 TC = -55 °C 10 0 2 1 2 3 4 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics 5 Axis Title Axis Title 0.025 750 10000 10000 600 VGS = 4.5 V VGS = 10 V 100 0.005 Coss 300 100 150 0 0 10 0 20 40 60 Crss 10 0 80 5 10 VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current Capacitance Axis Title Axis Title 1000 VDS = 6 V VDS = 20 V 4 100 2 0 10 2 4 6 8 10 2nd line RDS(on) - On-Resistance (Normalized) 8 1st line 2nd line 2nd line VGS - Gate-to-Source Voltage (V) VDS = 12.5 V ID = 16.6 A 25 10000 1.6 10000 0 20 ID - Drain Current (A) 2nd line 10 6 15 VGS = 10 V, ID = 16.6 A 1.4 1000 VGS = 4.5 V, ID = 13.3 A 1.1 100 0.9 0.6 10 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature S17-0302-Rev. A, 27-Feb-17 1st line 2nd line 0.010 1000 450 1st line 2nd line 1000 0.015 2nd line C - Capacitance (pF) 0.020 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) Ciss Document Number: 68279 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ320DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 0.030 2nd line RDS(on) - On-Resistance (Ω) 10000 TJ = 150 °C 1000 1 1st line 2nd line 2nd line IS - Source Current (A) 10 TJ = 25 °C 0.1 100 0.01 0.001 0.024 1000 0.018 TJ = 150 °C 0.012 100 0.006 0.2 0.4 0.6 0.8 1.0 TJ = 25 °C 0 10 0 10000 1st line 2nd line 100 10 2 1.2 4 6 8 10 VSD - Source-to-Drain Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title 2.0 ID = 250 μA 1.8 40 Power (W) 1000 1.6 1st line 2nd line 2nd line VGS(th) (V) 50 10000 1.4 30 20 100 10 1.2 1.0 0 0.001 10 -50 -25 0 25 50 75 100 125 150 0.01 0.1 TJ - Temperature (°C) 2nd line Threshold Voltage 1 10 Time (s) 100 1000 Single Pulse Power, Junction-to-Ambient Axis Title 10000 100 10 by Limited RDS(on) 100 μs 1000 1 ms 1 1st line 2nd line 2nd line ID - Drain Current (A) IDM limited 10 ms 100 ms 10 s, 1 s 100 0.1 DC TA = 25 °C Single pulse BVDSS limited 0.01 10 0.1 (1) 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S17-0302-Rev. A, 27-Feb-17 Document Number: 68279 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ320DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 33 1000 Package limited 1st line 2nd line 2nd line ID - Drain Current (A) 44 22 100 11 0 10 0 25 50 75 100 125 150 TC - Case Temperature (°C) 2nd line 20 2.2 15 1.7 Power (W) Power (W) Current Derating a 10 5 1.1 0.6 0.0 0 0 25 50 75 100 125 TC - Case Temperature (°C) Power, Junction-to-Case 150 0 25 50 75 100 125 150 TA = Ambient Temperature (°C) Power, Junction-to-Ambient Note a. The power dissipation PD is based on TJ max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S17-0302-Rev. A, 27-Feb-17 Document Number: 68279 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ320DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 t2 1. Duty Cycle, D = 0.05 0.02 t1 t2 2. Per Unit Base = RthJA = 69 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case S17-0302-Rev. A, 27-Feb-17 Document Number: 68279 7 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ320DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 50 10000 120 10000 60 100 30 40 1000 30 1st line 2nd line 1000 VGS = 4 V 2nd line ID - Drain Current (A) 90 1st line 2nd line 2nd line ID - Drain Current (A) VGS = 10 V thru 5 V TC = 25 °C 20 100 10 VGS = 3 V TC = 125 °C 0 0 10 0 0.4 0.8 1.2 1.6 TC = -55 °C 10 0 2 1 2 3 4 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics 5 Axis Title Axis Title 0.010 1500 10000 10000 100 0.002 1000 900 1st line 2nd line VGS = 10 V 0.004 2nd line C - Capacitance (pF) 1000 VGS = 4.5 V 0.006 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) Ciss 1200 0.008 Coss 600 100 300 Crss 0 0 10 30 60 90 10 0 120 5 10 VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current Capacitance Axis Title Axis Title 1000 VDS = 6 V VDS = 20 V 4 100 2 0 10 4 8 12 16 20 2nd line RDS(on) - On-Resistance (Normalized) 8 1st line 2nd line 2nd line VGS - Gate-to-Source Voltage (V) VDS = 12.5 V ID = 24.8 A 25 10000 1.6 10000 0 20 ID - Drain Current (A) 2nd line 10 6 15 VGS = 10 V, ID = 20 A 1.4 1000 VGS = 4.5 V, ID = 18 A 1.1 100 0.9 0.6 10 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature S17-0302-Rev. A, 27-Feb-17 1st line 2nd line 0 Document Number: 68279 8 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ320DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 0.015 2nd line RDS(on) - On-Resistance (Ω) 10000 TJ = 150 °C 1000 1 1st line 2nd line 2nd line IS - Source Current (A) 10 TJ = 25 °C 0.1 100 0.01 0.001 0.012 1000 0.009 TJ = 150 °C 0.006 100 0.003 0.2 0.4 0.6 0.8 1.0 TJ = 25 °C 0 10 0 10000 1st line 2nd line 100 10 2 1.2 4 6 8 10 VSD - Source-to-Drain Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title 2.1 10000 ID = 250 μA 1.9 40 Power (W) 1000 1.7 1st line 2nd line 2nd line VGS(th) (V) 50 1.5 30 20 100 1.3 10 1.1 10 -50 -25 0 25 50 75 0 0.001 100 125 150 0.01 0.1 TJ - Temperature (°C) 2nd line Threshold Voltage 1 10 Time (s) 100 1000 Single Pulse Power, Junction-to-Ambient Axis Title 1000 10000 IDM limited 1000 100 μs 10 1st line 2nd line 2nd line ID - Drain Current (A) 100 Limited by RDS(on) 1 ms 10 ms 1 100 ms 10 s, 1 s 0.1 100 DC TA = 25 °C Single pulse BVDSS limited 0.01 10 0.1 (1) 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S17-0302-Rev. A, 27-Feb-17 Document Number: 68279 9 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ320DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 60 1000 1st line 2nd line 2nd line ID - Drain Current (A) 80 40 Package limited 100 20 0 10 0 25 50 75 100 125 150 TC - Case Temperature (°C) 2nd line 38 2.8 28.5 2.1 Power (W) Power (W) Current Derating a 19 1.4 0.7 9.5 0.0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 150 Note a. The power dissipation PD is based on TJ max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S17-0302-Rev. A, 27-Feb-17 Document Number: 68279 10 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ320DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 64 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68279. S17-0302-Rev. A, 27-Feb-17 Document Number: 68279 11 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAIR® 3 x 3 Case Outline D 8 7 6 A A1 5 K2 D2 5 6 K2 7 8 E1 K L d 0.10 C 2X * 1 2 3 d 0.10 C 2X 0.10 4 0.15 4 3 2 1 e b b1 0.10 C A f E2 K1 E 9 Note * Indicates pin #1 orientation (optional) c C d 0.08 C MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. MAX. A 0.70 0.75 0.80 0.028 0.030 0.031 A1 0.00 0.05 0.000 b 0.35 0.40 0.45 0.014 0.016 0.018 b1 0.20 0.25 0.38 0.008 0.010 0.015 C 0.18 0.20 0.23 0.007 0.008 0.009 D 2.90 3.00 3.10 0.114 0.118 0.122 D2 2.35 2.40 2.45 0.093 0.094 0.096 E 2.90 3.00 3.10 0.114 0.118 0.122 E1 0.94 0.99 1.04 0.037 0.039 0.041 E2 0.47 0.52 0.57 0.019 0.020 0.022 e 0.002 0.65 BSC 0.026 BSC K 0.25 typ. 0.010 typ. K1 0.35 typ. 0.014 typ. K2 0.30 typ. L 0.27 0.32 0.012 typ. 0.37 0.011 0.013 0.015 ECN: T12-0347-Rev. C, 18-Jun-12 DWG: 5998 Revison: 18-Jun-12 1 Document Number: 67698 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern Vishay Siliconix RECOMMENDED MINIMUM PAD FOR PowerPAIR® 3 x 3 0.450 0.650 (0.018) (0.026) 0.450 (0.018) 1.036 2.450 (0.096) 0.084 (0.003) (0.041) 0.209 (0.008) 0.306 (0.012) 0.562 (0.022) (0.063) 1.611 0.390 (0.015) 1.200 (0.047) Recommended PAD for PowerPAIR 3 x 3 Dimensions in millimeters (inches) Keep-Out 3.5 mm x 3.5 mm for non terminating traces Document Number: 63294 Revision: 25-May-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000