SIZ340ADT-T1-GE3

SiZ340ADT www.vishay.com Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs FEATURES PowerPAIR® 3 x 3 G2 S2 8 S2 7 S2 6 5 S1/D2 (Pin 9) D1 3 m m 1 1 2 G1 3 D1 4 D1 D1 Bottom View m 3m Top View PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration • TrenchFET® Gen IV power MOSFETs • 100 % Rg and UIS tested • PowerPAIR® integrated half-bridge MOSFET power stage • Optimized Qgd/Qgs ratio improves switching characteristics • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS D1 • CPU core power CHANNEL-1 CHANNEL-2 30 0.00940 0.01440 3.7 33.4 30 0.00429 0.00620 8.4 69.7 • Computer / server peripherals G1 • POL N-Channel 1 MOSFET S1/D2 • Synchronous buck converter G2 • Telecom DC/DC N-Channel 2 MOSFET Dual S2 ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAIR 3 x 3 SiZ340ADT-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (100 μs pulse width) ID IDM Continuous source drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 100 mH IAS EAS Maximum power dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Operating junction and storage temperature range Soldering recommendations (peak temperature) d TJ, Tstg CHANNEL-1 CHANNEL-2 30 30 +20, -16 +16, -12 33.4 69.7 26.7 55.7 15.7 b, c 25.4 b, c b, c 13.7 20.4 b, c 100 150 13.9 25.8 3.1 b, c 3.5 b, c 10 15 5 11 16.7 31 10.7 20 3.7 b, c 4.2 b, c 2.4 b, c 2.7 b, c -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL CHANNEL-1 CHANNEL-2 TYP. 27 6 TYP. 24 3.2 MAX. 34 7.5 MAX. 30 4 UNIT t ≤ 10 s RthJA Maximum junction-to-ambient b, f °C/W Maximum junction-to-case (drain) Steady state RthJC Notes a. TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 69 °C/W for channel-1 and 64 °C/W for channel-2 S19-1101-Rev. A, 30-Dec-2019 Document Number: 77356 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ340ADT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS Temperature coefficient VGS(th) Temperature coefficient Gate threshold voltage Gate source leakage Zero gate voltage drain current On-state drain current b Drain-source on-state resistance b Forward transconductance b VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 μA Ch-1 30 - - VGS = 0 V, ID = 250 μA Ch-2 30 - - ID = 10 mA Ch-1 - 21 ID = 10 mA Ch-2 - 26 - ID = 250 μA Ch-1 - 5.3 - ID = 250 μA Ch-2 - 4.2 - VDS = VGS, ID = 250 μA Ch-1 1.1 - 2.4 VDS = VGS, ID = 250 μA Ch-2 1.1 - 2.4 VDS = 0 V, VGS = +20 V / -16 V Ch-1 - - 100 VDS = 0 V, VGS = +16 V / -12 V Ch-2 - - 100 1 VDS = 30 V, VGS = 0 V Ch-1 - - VDS = 30 V, VGS = 0 V Ch-2 - - 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C Ch-1 - - 10 VDS = 30 V, VGS = 0 V, TJ = 55 °C Ch-2 - - 10 VDS ≥ 5 V, VGS = 10 V Ch-1 15 - - VDS ≥ 5 V, VGS = 10 V Ch-2 15 - - VGS = 10 V, ID = 10 A Ch-1 - 0.00780 0.00940 VGS = 10 V, ID = 20 A Ch-2 - 0.00357 0.00429 VGS = 4.5 V, ID = 7 A Ch-1 - 0.01200 0.01440 VGS = 4.5 V, ID = 15 A Ch-2 - 0.00496 0.00620 VGS = 10 V, ID = 10 A Ch-1 - 57 - VGS = 10 V, ID = 10 A Ch-2 - 60 - Ch-1 - 580 - V mV/°C V nA μA A Ω S Dynamic a Input capacitance Ciss Output capacitance Coss Channel-1 VDS = 15 V, VGS = 10 V, f = 1 MHz Reverse transfer capacitance Crss Channel-2 VDS = 15 V, VGS = 10 V, f = 1 MHz Crss/Ciss ratio VDS = 15 V, VGS = 10 V, ID = 15 A Total gate charge Qg Ch-2 - 1290 - Ch-1 - 250 - Ch-2 - 660 - Ch-1 - 30 - Ch-2 - 50 - Ch-1 - 0.052 0.103 Ch-2 - 0.076 0.152 Ch-1 - 8.1 12.2 27.9 VDS = 15 V, VGS = 10 V, ID = 20 A Ch-2 - 18.6 VDS = 15 V, VGS = 4.5 V, ID = 15 A Ch-1 - 3.7 4.5 VDS = 15 V, VGS = 4.5 V, ID = 20 A Ch-2 - 8.4 12.6 Gate-source charge Qgs Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 15 A Ch-1 - 2.4 - Ch-2 - 4.6 - Gate-drain charge Qgd Channel-2 VDS = 15 V, VGS = 4.5 V, ID = 20 A Ch-1 - 0.67 - Ch-2 - 1.5 - Output charge Qoss VDS = 15 V, VGS = 0 V Ch-1 - 6.5 - Ch-2 - 13.9 - Ch-1 0.24 1.2 2.4 Ch-2 0.2 1 2 Gate resistance S19-1101-Rev. A, 30-Dec-2019 Rg f = 1 MHz pF nC Ω Document Number: 77356 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ340ADT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. 20 UNIT Dynamic a Turn-on delay time td(on) Rise time Turn-off delay time tr td(off) Fall time Turn-on delay time Channel-2 VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω tf td(on) Rise time Turn-off delay time Channel-1 VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω tr td(off) Fall time Channel-1 VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω Channel-2 VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω tf Ch-1 - 8 Ch-2 - 12 24 Ch-1 - 28 45 Ch-2 - 8 16 Ch-1 - 15 25 Ch-2 - 22 33 Ch-1 - 10 20 Ch-2 - 8 16 Ch-1 - 15 25 Ch-2 - 22 35 Ch-1 - 80 120 Ch-2 - 180 270 Ch-1 - 10 20 Ch-2 - 26 39 Ch-1 - 38 57 Ch-2 - 15 23 Ch-1 - - 13.9 Ch-2 - - 25.8 Ch-1 - - 100 150 ns Drain-Source Body Diode Characteristics Continuous source-drain diode current Pulse diode forward current (t = 100 μs) Body diode voltage TC = 25 °C IS ISM VSD Ch-2 - - IS = 8 A, VGS = 0 V Ch-1 - 0.83 1.2 IS = 10 A, VGS = 0 V Ch-2 - 0.81 1.2 Ch-1 - 26 52 Ch-2 - 17 68 Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Channel-1 IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C Ch-1 - 26 52 Ch-2 - 5 10 Reverse recovery fall time ta Channel-2 IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C Ch-1 - 14 - Ch-2 - 6.5 - Ch-1 - 12 - Ch-2 - 10.5 - Reverse recovery rise time tb A V ns nC ns Notes a. Guaranteed by design, not subject to production testing b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S19-1101-Rev. A, 30-Dec-2019 Document Number: 77356 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ340ADT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 100 100 10000 TC = -55 °C VGS = 10 V thru 5 V 40 100 20 75 50 100 25 TC = 25 °C VGS = 3 V 1 2 3 10 0 10 0 0 1000 TC = 125 °C 1st line 2nd line VGS = 4 V 60 2nd line ID - Drain Current (A) 1000 1st line 2nd line 2nd line ID - Drain Current (A) 80 0 4 1.5 3 4.5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title Axis Title 10000 0.025 1000 10000 VGS = 4.5 V 0.010 VGS = 10 V 100 Coss 100 100 Crss 0.005 10 20 30 40 0 50 5 10 20 25 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance Axis Title 1000 1st line 2nd line VDS = 8 V, 15 V 24 V 4 100 2 10 0 4 6 8 10 2nd line RDS(on) - On-Resistance (Normalized) 8 6 10000 1.6 ID = 15.7 A 2 30 Axis Title 10000 10 0 15 VGS = 10 V, 10 A 1.4 1000 1.2 VGS = 4.5 V, 7 A 1.0 100 0.8 10 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S19-1101-Rev. A, 30-Dec-2019 1st line 2nd line 0 10 10 10 0 2nd line VGS - Gate-to-Source Voltage (V) 1000 1st line 2nd line 1000 0.015 2nd line C - Capacitance (pF) 0.020 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) Ciss Document Number: 77356 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ340ADT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 0.04 10000 100 2nd line RDS(on) - On-Resistance (Ω) 1000 TJ = 150 °C TJ = 25 °C 1 100 0.1 0.03 1000 1st line 2nd line 10 1st line 2nd line 2nd line IS - Source Current (A) ID = 10 A 0.02 TJ = 125 °C 100 0.01 TJ = 25 °C 0.01 10 0 0.2 0.4 0.6 0.8 1.0 10 0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title 50 10000 2.0 ID = 250 μA 40 Power (W) 1000 1.6 1st line 2nd line 2nd line VGS(th) (V) 1.8 1.4 30 20 100 10 1.2 0 0.001 10 1.0 -50 -25 0 25 50 75 100 125 150 0.01 0.1 TJ - Junction Temperature (°C) Threshold Voltage 1 10 Time (s) 100 1000 Single Pulse Power, Junction-to-Ambient Axis Title 100 10000 10 100 μs 1000 Limited by RDS(on) a 1 ms 1 1st line 2nd line 2nd line ID - Drain Current (A) IDM limited 10 ms 100 ms 100 10s, 1s 0.1 DC TA = 25 °C, single pulse BVDSS limited 10 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area, Junction-to-Ambient Note a. VGS > minimum VGS at which RDS(on) is specified S19-1101-Rev. A, 30-Dec-2019 Document Number: 77356 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ340ADT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 30 1000 1st line 2nd line 2nd line ID - Drain Current (A) 40 20 100 10 10 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 20 2.2 15 1.7 Power (W) Power (W) Current Derating a 10 5 1.1 0.6 0 0.0 0 25 50 75 100 125 TC - Case Temperature (°C) Power, Junction-to-Case 150 0 25 50 75 100 125 TA - Ambient Temperature (°C) 150 Power, Junction-to-Ambient Note a. The power dissipation PD is based on TJ max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S19-1101-Rev. A, 30-Dec-2019 Document Number: 77356 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ340ADT www.vishay.com Vishay Siliconix Normalized Effective Transient Thermal Impedance CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 Notes: 0.2 0.1 PDM 0.1 t1 0.05 t2 1. Duty Cycle, D = 0.02 2. Per Unit Base = RthJA = 69 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 0.0001 t1 t2 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case S19-1101-Rev. A, 30-Dec-2019 Document Number: 77356 7 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ340ADT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 150.0 100 10000 VGS = 10 V thru 5 V VGS = 4 V 60.0 100 VGS = 3 V 75 1000 TC = 125 °C 50 100 TC = 25 °C 25 30.0 TC = -55 °C 0 1.0 2.0 3.0 10 0 10 0 0 4.0 1 2 4 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title Axis Title 10000 10000 10 000 0.008 VGS = 10 V 100 100 100 Crss 0.002 0 30 60 90 120 10 10 10 0 0 150 5 10 15 20 25 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance Axis Title 1000 1st line 2nd line 4 100 VDS = 8 V, 15 V, 24 V 2 10 0 4 6 8 10 12 14 16 18 20 2nd line RDS(on) - On-Resistance (Normalized) 8 6 10000 1.6 ID = 20 A 2 30 Axis Title 10000 10 0 1000 Coss VGS = 10 V, 20 A 1.4 1000 1.2 VGS = 4.5 V, 15 A 1.0 100 0.8 10 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S19-1101-Rev. A, 30-Dec-2019 1st line 2nd line 0.004 1000 1st line 2nd line 1000 VGS = 4.5 V 0.006 2nd line C - Capacitance (pF) Ciss 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 3 VDS - Drain-to-Source Voltage (V) 0.010 2nd line VGS - Gate-to-Source Voltage (V) 1st line 2nd line 90.0 2nd line ID - Drain Current (A) 1000 1st line 2nd line 2nd line ID - Drain Current (A) 120.0 Document Number: 77356 8 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ340ADT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 0.02 10000 100 1000 TJ = 150 °C TJ = 25 °C 1 100 0.1 0.015 1000 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 10 1st line 2nd line 2nd line IS - Source Current (A) ID = 20 A TJ = 125 °C 0.01 100 0.005 TJ = 25 °C 0.01 10 0 0.2 0.4 0.6 0.8 1.0 10 0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title 50 10000 2.0 ID = 250 μA 40 Power (W) 1000 1.6 1st line 2nd line 2nd line VGS(th) (V) 1.8 1.4 30 20 100 1.2 10 10 1.0 -50 -25 0 25 50 75 0 0.001 100 125 150 TJ - Junction Temperature (°C) 0.01 0.1 1 Time (s) 10 100 1000 Threshold Voltage Single Pulse Power, Junction-to-Ambient Axis Title 10000 1000 IDM limited 1000 100 μs 10 1st line 2nd line 2nd line ID - Drain Current (A) 100 1 ms 10 ms 1 Limited by RDS(on) a 100 ms 100 10 s, 1 s 0.1 TA = 25 °C, single pulse DC BVDSS limited 10 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area, Junction-to-Ambient Note a. VGS > minimum VGS at which RDS(on) is specified S19-1101-Rev. A, 30-Dec-2019 Document Number: 77356 9 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ340ADT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 60 1000 1st line 2nd line 2nd line ID - Drain Current (A) 80 40 100 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating a 28.5 2.1 Power (W) 2.8 Power (W) 38 19 9.5 1.4 0.7 0.0 0 0 25 50 75 100 125 TC - Case Temperature (°C) Power, Junction-to-Case 150 0 25 50 75 100 125 TA - Ambient Temperature (°C) 150 Power, Junction-to-Ambient Note a. The power dissipation PD is based on TJ max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S19-1101-Rev. A, 30-Dec-2019 Document Number: 77356 10 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ340ADT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 64 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77356. S19-1101-Rev. A, 30-Dec-2019 Document Number: 77356 11 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAIR® 3 x 3 Case Outline D 8 7 6 A A1 5 K2 D2 5 6 K2 7 8 E1 K L d 0.10 C 2X * 1 2 3 d 0.10 C 2X 0.10 4 0.15 4 3 2 1 e b b1 0.10 C A f E2 K1 E 9 Note * Indicates pin #1 orientation (optional) c C d 0.08 C MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. MAX. A 0.70 0.75 0.80 0.028 0.030 0.031 A1 0.00 0.05 0.000 b 0.35 0.40 0.45 0.014 0.016 0.018 b1 0.20 0.25 0.38 0.008 0.010 0.015 C 0.18 0.20 0.23 0.007 0.008 0.009 D 2.90 3.00 3.10 0.114 0.118 0.122 D2 2.35 2.40 2.45 0.093 0.094 0.096 E 2.90 3.00 3.10 0.114 0.118 0.122 E1 0.94 0.99 1.04 0.037 0.039 0.041 E2 0.47 0.52 0.57 0.019 0.020 0.022 e 0.002 0.65 BSC 0.026 BSC K 0.25 typ. 0.010 typ. K1 0.35 typ. 0.014 typ. K2 0.30 typ. L 0.27 0.32 0.012 typ. 0.37 0.011 0.013 0.015 ECN: T12-0347-Rev. C, 18-Jun-12 DWG: 5998 Revison: 18-Jun-12 1 Document Number: 67698 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern Vishay Siliconix RECOMMENDED MINIMUM PAD FOR PowerPAIR® 3 x 3 0.450 0.650 (0.018) (0.026) 0.450 (0.018) 1.036 2.450 (0.096) 0.084 (0.003) (0.041) 0.209 (0.008) 0.306 (0.012) 0.562 (0.022) (0.063) 1.611 0.390 (0.015) 1.200 (0.047) Recommended PAD for PowerPAIR 3 x 3 Dimensions in millimeters (inches) Keep-Out 3.5 mm x 3.5 mm for non terminating traces Document Number: 63294 Revision: 25-May-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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