SIZ340DT-T1-GE3

SiZ340DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) (Ω) MAX. ID (A) 0.0095 at VGS = 10 V 30 a 0.0137 at VGS = 4.5 V 22 0.0051 at VGS = 10 V 40 a 0.0070 at VGS = 4.5 V 40 a Qg (Typ.) 5.6 nC 10.1 nC APPLICATIONS PowerPAIR® 3 x 3 G2 S2 8 S2 7 S2 6 5 S1/D2 1 m 3m Top View G1 • POL D1 m m D1 • Synchronous buck - Battery charging - Computer system power - Graphic cards (Pin 9) 3 • PowerPAIR® Optimizes high-side and low-side MOSFETs for synchronous buck converters • TrenchFET® power Mosfets • 100 % Rg and UIS tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 N-Channel 1 MOSFET 1 2 G1 3 D1 4 D1 D1 Bottom View S1/D2 G2 N-Channel 2 MOSFET Ordering Information: SiZ340DT-T1-GE3 (lead (Pb)-free and halogen-free) S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Channel-1 Channel-2 Drain-Source Voltage VDS 30 Gate-Source Voltage VGS +20, -16 TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C IDM Pulsed Drain Current (t = 100 μs) Continuous Source Drain Diode Current Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH IS IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d,e TJ, Tstg V 30 a 40 a 26.5 40 a 15.6 b,c 22.6 b,c 12.4 b,c 18.1 b,c 100 150 13.9 26 3.1 b,c 3.5 b,c 10 15 5 11 16.7 31 10.7 20 3.7 b,c 4.2 b,c 2.4 b,c 2.7 b,c -55 to 150 260 Unit A mJ W °C Notes a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR 3 x 3 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components. S14-0611-Rev. B, 24-Mar-14 Document Number: 62877 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ340DT www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol Channel-1 Typ. Max. Channel-2 Typ. Max. Maximum Junction-to-Ambient a,b t ≤ 10 s RthJA 27 34 24 30 Maximum Junction-to-Case (Drain) Steady State RthJC 6 7.5 3.2 4 Min. Typ. Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 30 30 1 1 10 10 - 18.4 30 -4.3 -5 0.0079 0.0042 0.0110 0.0058 37 60 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 0.042 0.025 0.3 0.3 760 1552 250 450 32 40 12.3 22.6 5.6 10.1 2.3 4.2 1 1.8 6.6 12.4 1.7 1.3 Unit °C/W Notes a. Surface mounted on 1" x 1" FR4 board. b. Maximum under steady state conditions is 69 °C/W for channel-1 and 64 °C/W for channel-2. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol TEST CONDITIONS Max. Unit Static VDS VGS = 0 V, ID = 250 μA ΔVDS/TJ ID = 250 μA ΔVGS(th)/TJ ID = 250 μA VGS(th) VDS = VGS, ID = 250 μA Gate Source Leakage IGSS VDS =0 V, VGS = +20 V, -16 V Zero Gate Voltage Drain Current IDSS Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage VDS = 30 V, VGS = 0 V VDS = 30 V, VGS =0 V, TJ = 55 °C On-State Drain Current b Drain-Source On-State Resistance Forward Transconductance b VDS ≥ 5 V,VGS = 10 V ID(on) b VGS = 10 V, ID = 15.6 A VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 13 A VGS = 4.5 V, ID = 20 A VDS = 15 V, ID = 15.6 A VDS = 15 V, ID = 20 A RDS(on) gfs V mV/°C 2.4 V 2.4 ± 100 nA ± 100 1 1 μA 5 5 A 0.0095 0.0051 Ω 0.0137 0.0070 S - Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS Channel-1 = 15 V, VGS = 0 V, f = 1 MHz VDS Channel-2 =15 V, VGS = 0 V, f = 1 MHz Crss / Ciss Ratio Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Output Charge Gate Resistance S14-0611-Rev. B, 24-Mar-14 Qgd VDS = 15 V, VGS = 10 V, ID = 15.6 A VDS = 15 V, VGS = 10 V, ID = 20 A Channel-1 VDS = 15 V,VGS = 4.5 V, ID = 15.6 A Channel-2 VDS = 15 V,VGS = 4.5 V, ID = 20 A Qoss Rg f = 1 MHz 0.084 0.050 19 35 9 16 3.4 2.6 pF - nC Ω Document Number: 62877 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ340DT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol TEST CONDITIONS Min. Typ. Max. - 13 20 Unit Dynamic a Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Ch-1 td(on) Channel-1 VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω tr td(off) Chan nel-2 VDD =15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω tf td(on) Channel-1 VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω tr td(off) Channel-2 VDD =15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω tf Ch-2 - 22 33 Ch-1 - 55 85 Ch-2 - 82 123 Ch-1 - 16 25 Ch-2 - 20 30 Ch-1 - 7 14 Ch-2 - 7 14 Ch-1 - 8 16 Ch-2 - 10 20 Ch-1 - 11 20 Ch-2 - 12 20 Ch-1 - 12 20 Ch-2 - 16 30 Ch-1 - 7 15 Ch-2 - 7 12 Ch-1 - - 13.9 Ch-2 - - 25.8 Ch-1 - - 100 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current (t = 100 μs) Body Diode Voltage TC = 25 °C IS ISM IS = 10 A, VGS = 0 V VSD Ch-2 - - 150 Ch-1 - 0.8 1.2 Ch-2 - 0.82 1.2 Ch-1 - 20 35 Ch-2 - 26 40 Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Channel-1 IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C Ch-1 - 9 20 Ch-2 - 20 30 Reverse Recovery Fall Time ta Channel-2 IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C Ch-1 - 11.5 - Ch-2 - 18.1 - Ch-1 - 8.5 - Ch-2 - 7.9 - Reverse Recovery Rise Time tb A V ns nC ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-0611-Rev. B, 24-Mar-14 Document Number: 62877 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ340DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 50 5 VGS = 10 V thru 4 V 4 ID - Drain Current (A) ID - Drain Current (A) 40 30 VGS = 3 V 20 TC = 25 °C 3 2 TC = 125 °C 1 10 TC = - 55 °C VGS = 2 V 0 0 0 0.5 1 1.5 VDS - Drain-to-Source Voltage (V) 2 0.6 0 1.2 1.8 2.4 3 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.020 900 720 0.015 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Ciss VGS = 4.5 V 0.010 VGS = 10 V 0.005 540 360 Coss 180 Crss 0 0 0 10 20 30 ID - Drain Current (A) 40 50 0 5 10 15 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.7 10 ID = 15.6 A ID = 15.6 A RDS(on) - On-Resistance (Normalized) VDS = 8 V VGS - Gate-to-Source Voltage (V) 20 8 6 VDS = 15 V VDS = 24 V 4 2 0 0 2.6 5.2 7.8 10.4 Qg - Total Gate Charge (nC) Gate Charge S14-0611-Rev. B, 24-Mar-14 13 VGS = 10 V 1.45 VGS = 4.5 V 1.2 0.95 0.7 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 150 On-Resistance vs. Junction Temperature Document Number: 62877 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ340DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.02 100 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 15.6 A TJ = 150 °C 10 TJ = 25 °C 1 0.1 0.0 0.015 TJ = 125 °C 0.01 TJ = 25 °C 0.005 0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1.2 2 Source-Drain Diode Forward Voltage 4 6 8 VGS - Gate-to-Source Voltage (V) 10 On-Resistance vs. Gate-to-Source Voltage 50 1.7 40 Power (W) VGS(th) (V) 1.5 ID = 250 μA 1.3 30 20 1.1 10 0.9 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 TJ - Temperature (°C) 0.1 1 10 100 1000 Time (s) Threshold Voltage Single Pulse Power 1000 ID - Drain Current (A) 100 Limited by RDS(on)* 10 100 μs 1 ms 1 10 ms 100 ms 1s 10 s DC 0.1 TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S14-0611-Rev. B, 24-Mar-14 Document Number: 62877 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ340DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 40 ID - Drain Current (A) 30 Package limited 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 20 2.2 15 1.7 Power (W) Power (W) Current Derating* 10 1.1 0.6 5 0.0 0 0 25 50 75 100 TC - Case Temperature (°C) Power, Junction-to-Case 125 150 0 25 50 75 100 TA - Ambient Temperature (°C) 125 150 Power, Junction-to-Ambient * The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S14-0611-Rev. B, 24-Mar-14 Document Number: 62877 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ340DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 t2 1. Duty Cycle, D = 0.05 0.02 t1 t2 2. Per Unit Base = RthJA = 69 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case S14-0611-Rev. B, 24-Mar-14 Document Number: 62877 7 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ340DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 60 5 VGS = 10 V thru 4 V 4 30 ID - Drain Current (A) ID - Drain Current (A) 45 VGS = 3 V 3 TC = 25 °C 2 15 TC = 125 °C 1 TC = - 55 °C 0 0 0 0.5 1 1.5 2 0 VDS - Drain-to-Source Voltage (V) 0.6 1.2 1.8 2.4 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3 1800 0.010 1350 0.008 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Ciss VGS = 4.5 V 0.006 VGS = 10 V 900 450 0.004 Coss Crss 0 0.002 0 15 30 ID - Drain Current (A) 45 0 60 6 12 18 24 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 1.7 ID = 20 A ID = 20 A RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) VDS =15 V 8 6 VDS = 8 V VDS = 24 V 4 2 0 0 30 6 12 18 Qg - Total Gate Charge (nC) Gate Charge S14-0611-Rev. B, 24-Mar-14 24 VGS = 10 V 1.45 VGS = 4.5 V 1.2 0.95 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 62877 8 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ340DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.020 100 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 20 A TJ = 150 °C 10 TJ = 25 °C 1 0.015 0.010 TJ = 125 °C 0.005 TJ = 25 °C 0.1 0 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 2 1.2 Source-Drain Diode Forward Voltage 4 6 8 VGS - Gate-to-Source Voltage (V) 10 On-Resistance vs. Gate-to-Source Voltage 50 2 40 Power (W) VGS(th) (V) 1.7 ID = 250 μA 1.4 30 20 1.1 10 0.8 0 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 150 0.001 0.01 Threshold Voltage 0.1 1 Time (s) 10 100 1000 Single Pulse Power 1000 100 ID - Drain Current (A) Limited by RDS(on)* 100 μs 10 1 ms 10 ms 1 100 ms 1s 10 s DC 0.1 TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 Safe Operating Area, Junction-to-Ambient S14-0611-Rev. B, 24-Mar-14 Document Number: 62877 9 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ340DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 68 ID - Drain Current (A) 51 Package Limited 34 17 0 0 25 50 75 100 TC - Case Temperature (°C) 125 150 Current Derating* 28.5 2.1 Power (W) 2.8 Power (W) 38 19 1.4 0.7 9.5 0 0.0 0 25 50 75 100 TC - Case Temperature (°C) Power, Junction-to-Case 125 150 0 25 50 75 100 TA - Ambient Temperature (°C) 125 150 Power, Junction-to-Ambient * The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S14-0611-Rev. B, 24-Mar-14 Document Number: 62877 10 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ340DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 64 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62877. S14-0611-Rev. B, 24-Mar-14 Document Number: 62877 11 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAIR® 3 x 3 Case Outline D 8 7 6 A A1 5 K2 D2 5 6 K2 7 8 E1 K L d 0.10 C 2X * 1 2 3 d 0.10 C 2X 0.10 4 0.15 4 3 2 1 e b b1 0.10 C A f E2 K1 E 9 Note * Indicates pin #1 orientation (optional) c C d 0.08 C MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. MAX. A 0.70 0.75 0.80 0.028 0.030 0.031 A1 0.00 0.05 0.000 b 0.35 0.40 0.45 0.014 0.016 0.018 b1 0.20 0.25 0.38 0.008 0.010 0.015 C 0.18 0.20 0.23 0.007 0.008 0.009 D 2.90 3.00 3.10 0.114 0.118 0.122 D2 2.35 2.40 2.45 0.093 0.094 0.096 E 2.90 3.00 3.10 0.114 0.118 0.122 E1 0.94 0.99 1.04 0.037 0.039 0.041 E2 0.47 0.52 0.57 0.019 0.020 0.022 e 0.002 0.65 BSC 0.026 BSC K 0.25 typ. 0.010 typ. K1 0.35 typ. 0.014 typ. K2 0.30 typ. L 0.27 0.32 0.012 typ. 0.37 0.011 0.013 0.015 ECN: T12-0347-Rev. C, 18-Jun-12 DWG: 5998 Revison: 18-Jun-12 1 Document Number: 67698 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern Vishay Siliconix RECOMMENDED MINIMUM PAD FOR PowerPAIR® 3 x 3 0.450 0.650 (0.018) (0.026) 0.450 (0.018) 1.036 2.450 (0.096) 0.084 (0.003) (0.041) 0.209 (0.008) 0.306 (0.012) 0.562 (0.022) (0.063) 1.611 0.390 (0.015) 1.200 (0.047) Recommended PAD for PowerPAIR 3 x 3 Dimensions in millimeters (inches) Keep-Out 3.5 mm x 3.5 mm for non terminating traces Document Number: 63294 Revision: 25-May-11 www.vishay.com 1 This document is subject to change without notice. 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