SIZ342ADT-T1-GE3

SiZ342ADT www.vishay.com Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PowerPAIR® 3 x 3 G2 S2 8 S2 7 S2 6 5 S1/D2 (Pin 9) D1 3 m m 1 3 mm Top View 1 2 G1 3 D1 4 D1 D1 Bottom View MOSFET CHANNEL-1 AND CHANNEL-2 0.0094 RDS(on) max. () at VGS = 4.5 V 0.0144 ID (A) Configuration D1 Synchronous buck DC/DC conversion Half bridge POL G1 N-Channel 1 MOSFET 30 RDS(on) max. () at VGS = 10 V Qg typ. (nC) APPLICATIONS • • • • PRODUCT SUMMARY VDS (V) • TrenchFET® Gen IV power MOSFET • High side and low side MOSFETs form optimized combination for 50 % duty cycle • Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency for high frequency switching • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S1/D2 G2 3.7 33.4 a N-Channel 2 MOSFET Dual S2 ORDERING INFORMATION Package PowerPAIR 3 x 3 Lead (Pb)-free and halogen-free SiZ342ADT-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) CHANNEL-1 AND CHANNEL-2 PARAMETER SYMBOL LIMIT Drain-source voltage VDS 30 Gate-source voltage VGS +20 / -16 Continuous drain current (TJ = 150 °C) TC = 25 °C 33.4 TC = 70 °C 26.7 TA = 25 °C ID Pulsed drain current (t = 100 μs) Continuous source current (MOSFET diode conduction) Single pulse avalanche current Single pulse avalanche energy IDM TC = 25 °C TA = 25 °C L = 0.1 mH IS IAS EAS TC = 25 °C Maximum power dissipation TC = 70 °C TA = 25 °C Operating junction and storage temperature range 100 A 13.9 3.1 b, c 10 5 mJ 16.7 PD 10.7 3.7 b, c W 2.4 b, c TA = 70 °C Soldering recommendations (peak temperature) V 15.7 b, c 12.5 b, c TA = 70 °C UNIT TJ, Tstg -55 to +150 260 °C Notes a. TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 10 s S19-0945-Rev. A, 11-Nov-2019 Document Number: 76711 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ342ADT www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS CHANNEL-1 AND CHANNEL-2 PARAMETER Maximum junction-to-ambient a, b Maximum junction-to-case (drain) SYMBOL TYPICAL MAXIMUM t  10 s RthJA 27 34 Steady state RthJC 6 7.5 UNIT °C/W Notes a. Surface mounted on 1" x 1" FR4 board b. Maximum under steady state conditions is 69 °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER CHANNEL-1 AND CHANNEL-2 SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage VDS VGS = 0 V, ID = 250 μA 30 - - VGS(th) VDS = VGS, ID = 250 μA 1 - 2.4 IGSS VDS = 0 V, VGS = +20 V / -16 V - - ± 100 VDS = 30 V, VGS = 0 V - - 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C - - 5 VDS  5 V, VGS = 10 V 30 - - A VGS = 10 V, ID = 10 A - 0.0078 0.0094 VGS = 4.5 V, ID = 7 A - 0.0120 0.0144  VDS = 10 V, ID = 10 A - 57 - Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs V nA μA S Dynamic b Input capacitance Ciss - 580 Output capacitance Coss - 250 - Reverse transfer capacitance Crss - 30 - VDS = 15 V, VGS = 0 V, f = 1 MHz Crss/Ciss ratio Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time S19-0945-Rev. A, 11-Nov-2019 - 0.052 0.103 - 8.1 12.2 - 3.7 4.5 VDS = 15 V, VGS = 4.5 V, ID = 15.7 A - 2.4 - - 0.67 - f = 1 MHz 0.24 1.2 2.4 - 10 20 - 6 12 36 VDS = 15 V, VGS = 10 V, ID = 15.7 A td(on) tr td(off) VDD = 15 V, RL = 1.2 , ID  12.5 A, VGEN = 10 V, Rg = 1  - 18 tf - 8 16 td(on) - 15 30 - 180 360 - 20 40 - 15 30 tr td(off) tf VDD = 15 V, RL = 1.2 , ID  12.5 A, VGEN = 4.5 V, Rg = 1  pF nC  ns Document Number: 76711 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ342ADT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER CHANNEL-1 AND CHANNEL-2 SYMBOL TEST CONDITIONS IS TC = 25°C MIN. TYP. MAX. UNIT Drain-source Body Diode Characteristics Continuous source-drain diode current Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb - - 13.9 - - 100 IS = 12.5 A, VGS = 0 V - 0.85 1.2 - 15 30 ns IF = 12.5 A, di/dt = 100 A/μs, TJ = 25 °C - 4.3 8.6 nC - 8 - - 7 - A V ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing  Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S19-0945-Rev. A, 11-Nov-2019 Document Number: 76711 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ342ADT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 100 100 10000 TC = -55 °C VGS = 10 V thru 5 V 40 100 20 75 50 100 25 TC = 25 °C VGS = 3 V 1 2 3 10 0 10 0 0 1000 TC = 125 °C 1st line 2nd line VGS = 4 V 60 2nd line ID - Drain Current (A) 1000 1st line 2nd line 2nd line ID - Drain Current (A) 80 0 4 1.5 3 4.5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title Axis Title 10000 0.025 1000 10000 VGS = 4.5 V 0.010 VGS = 10 V 100 Coss 100 100 Crss 0.005 10 20 30 40 0 50 5 10 15 20 25 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Capacitance Axis Title Axis Title 10000 ID = 15.7 A 8 1000 1st line 2nd line 6 VDS = 8 V, 15 V 24 V 4 100 2 10 0 2 4 6 8 10 10000 1.6 2nd line RDS(on) - On-Resistance (Normalized) 10 0 30 VGS = 10 V, 10 A 1.4 1000 1.2 VGS = 4.5 V, 7 A 1.0 100 0.8 10 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S19-0945-Rev. A, 11-Nov-2019 1st line 2nd line 0 10 10 10 0 2nd line VGS - Gate-to-Source Voltage (V) 1000 1st line 2nd line 1000 0.015 2nd line C - Capacitance (pF) 0.020 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) Ciss Document Number: 76711 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ342ADT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 0.04 10000 100 TJ = 150 °C TJ = 25 °C 1 100 0.1 0.03 1000 1st line 2nd line 1000 2nd line RDS(on) - On-Resistance (Ω) 10 1st line 2nd line 2nd line IS - Source Current (A) ID = 10 A 0.02 TJ = 125 °C 100 0.01 TJ = 25 °C 0.01 10 0 0.2 0.4 0.6 0.8 1.0 10 0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title 50 10000 2.0 ID = 250 μA 40 1.4 Power (W) 1000 1.6 1st line 2nd line 2nd line VGS(th) (V) 1.8 30 20 100 10 1.2 10 1.0 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Threshold Voltage S19-0945-Rev. A, 11-Nov-2019 0 0.001 0.01 0.1 1 10 Time (s) 100 1000 Single Pulse Power Document Number: 76711 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ342ADT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 40 100 10000 10000 IDM limited 100 10 100 μs 1000 Limited by RDS(on) b 1st line 2nd line 20 10 1 ms 1 1st line 2nd line 1000 2nd line ID - Drain Current (A) 2nd line ID - Drain Current (A) 30 10 ms 100 ms 100 10s, 1s 0.1 DC TA = 25 °C, single pulse 10 0 25 50 75 100 125 150 10 0.1 1 10 100 TC - Case Temperature (°C) VDS - Drain-to-Source Voltage (V) Current Derating a Safe Operating Area, Junction-to-Ambient 20 2.2 15 1.7 Power (W) Power (W) 0 BVDSS limited 0.01 10 5 1.1 0.6 0.0 0 0 25 50 75 100 125 TC - Case Temperature (°C) Power, Junction-to-Case 150 0 25 50 75 100 125 TA - Ambient Temperature (°C) 150 Power, Junction-to-Ambient Notes a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-ambient thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit b. VGS > minimum VGS at which RDS(on) is specified S19-0945-Rev. A, 11-Nov-2019 Document Number: 76711 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ342ADT www.vishay.com Vishay Siliconix Normalized Effective Transient Thermal Impedance TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 Notes: 0.2 0.1 PDM 0.1 t1 0.05 t2 1. Duty Cycle, D = 0.02 2. Per Unit Base = RthJA = 69 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 0.0001 t1 t2 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case                     Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?76711. S19-0945-Rev. A, 11-Nov-2019 Document Number: 76711 7 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAIR® 3 x 3 Case Outline D 8 7 6 A A1 5 K2 D2 5 6 K2 7 8 E1 K L d 0.10 C 2X * 1 2 3 d 0.10 C 2X 0.10 4 0.15 4 3 2 1 e b b1 0.10 C A f E2 K1 E 9 Note * Indicates pin #1 orientation (optional) c C d 0.08 C MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. MAX. A 0.70 0.75 0.80 0.028 0.030 0.031 A1 0.00 0.05 0.000 b 0.35 0.40 0.45 0.014 0.016 0.018 b1 0.20 0.25 0.38 0.008 0.010 0.015 C 0.18 0.20 0.23 0.007 0.008 0.009 D 2.90 3.00 3.10 0.114 0.118 0.122 D2 2.35 2.40 2.45 0.093 0.094 0.096 E 2.90 3.00 3.10 0.114 0.118 0.122 E1 0.94 0.99 1.04 0.037 0.039 0.041 E2 0.47 0.52 0.57 0.019 0.020 0.022 e 0.002 0.65 BSC 0.026 BSC K 0.25 typ. 0.010 typ. K1 0.35 typ. 0.014 typ. K2 0.30 typ. L 0.27 0.32 0.012 typ. 0.37 0.011 0.013 0.015 ECN: T12-0347-Rev. C, 18-Jun-12 DWG: 5998 Revison: 18-Jun-12 1 Document Number: 67698 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern Vishay Siliconix RECOMMENDED MINIMUM PAD FOR PowerPAIR® 3 x 3 0.450 0.650 (0.018) (0.026) 0.450 (0.018) 1.036 2.450 (0.096) 0.084 (0.003) (0.041) 0.209 (0.008) 0.306 (0.012) 0.562 (0.022) (0.063) 1.611 0.390 (0.015) 1.200 (0.047) Recommended PAD for PowerPAIR 3 x 3 Dimensions in millimeters (inches) Keep-Out 3.5 mm x 3.5 mm for non terminating traces Document Number: 63294 Revision: 25-May-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 09-Jul-2021 1 Document Number: 91000