SIZ346DT-T1-GE3

SiZ346DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs FEATURES PowerPAIR® 3 x 3 G2 S2 8 S2 7 S2 6 5 S1/D2 • TrenchFET® Gen IV power MOSFETs • 100 % Rg and UIS tested • Optimized Qgs/Qgs ratio improves switching characteristics (Pin 9) D1 3 m m 1 3 1 2 G1 3 D1 4 D1 D1 Bottom View mm Top View • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS PRODUCT SUMMARY CHANNEL-1 CHANNEL-2 30 0.0285 0.0370 3.2 17 30 0.0115 0.0153 4.5 30 a VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) g Configuration D1 • CPU core power • Computer / server peripherals G1 • POL N-Channel 1 MOSFET S1/D2 • Synchronous buck converter G2 • Telecom DC/DC N-Channel 2 MOSFET Dual S2 ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAIR 3 x 3 SiZ346DT-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (100 μs pulse width) ID IDM Continuous source drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 100 mH IAS EAS Maximum power dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Operating junction and storage temperature range Soldering recommendations (peak temperature) d TJ, Tstg CHANNEL-1 CHANNEL-2 30 30 ± 20 +20, -16 17 30 13.8 24 8 b, c 14.1 b, c b, c 6.3 11.3 b, c 25 100 13.4 13.9 2.8 b, c 3.1 b, c 9 10 4.1 5 16 16.7 10.3 10.7 3.4 b, c 3.7 b, c 2.2 b, c 2.4 b, c -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL CHANNEL-1 CHANNEL-2 TYP. 30 6.3 TYP. 27 6 MAX. 37 7.8 MAX. 34 7.5 UNIT t  10 s RthJA Maximum junction-to-ambient b, f °C/W Maximum junction-to-case (drain) Steady state RthJC Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 71 °C/W for channel-1 and 69 °C/W for channel-2 g. TC = 25 °C S17-0249-Rev. A, 20-Feb-17 Document Number: 68128 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ346DT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS Temperature coefficient VGS(th) Temperature coefficient Gate threshold voltage Gate source leakage Zero gate voltage drain current On-state drain current b Drain-source on-state resistance b Forward transconductance b VGS = 0 V, ID = 250 μA Ch-1 30 - - VGS = 0 V, ID = 250 μA Ch-2 30 - - VDS/TJ ID = 250 μA Ch-1 - 31 - ID = 250 μA Ch-2 - 20 - VGS(th)/TJ ID = 250 μA Ch-1 - -4.9 - VDS VGS(th) IGSS IDSS ID(on) RDS(on) gfs ID = 250 μA Ch-2 - -5.6 - VDS = VGS, ID = 250 μA Ch-1 1.1 - 2.2 VDS = VGS, ID = 250 μA Ch-2 1.2 - 2.4 VDS = 0 V, VGS = +20 V, -20 V Ch-1 - - ± 100 VDS = 0 V, VGS = +20 V, -16 V Ch-2 - - ± 100 1 VDS = 30 V, VGS = 0 V Ch-1 - - VDS = 30 V, VGS = 0 V Ch-2 - - 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C Ch-1 - - 5 VDS = 30 V, VGS = 0 V, TJ = 55 °C Ch-2 - - 5 VDS 5 V, VGS = 10 V Ch-1 10 - - VDS 5 V, VGS = 10 V Ch-2 10 - - VGS = 10 V, ID = 10 A Ch-1 - 0.0230 0.0285 VGS = 10 V, ID = 14.4 A Ch-2 - 0.0084 0.0115 VGS = 4.5 V, ID = 5 A Ch-1 - 0.0300 0.0370 VGS = 4.5 V, ID = 13 A Ch-2 - 0.0111 0.0153 VGS = 10 V, ID = 10 A Ch-1 - 17 - VGS = 10 V, ID = 14.4 A Ch-2 - 17 - Ch-1 - 325 - V mV/°C V nA μA A  S Dynamic a Input capacitance Ciss Output capacitance Coss Channel-1 VDS = 15 V, VGS = 0 V, f = 1 MHz Reverse transfer capacitance Crss Channel-2 VDS = 15 V, VGS = 0 V, f = 1 MHz Crss/Ciss ratio Qg - 650 Ch-1 - 66 - Ch-2 - 236 - Ch-1 - 33 - Ch-2 - 20 - Ch-1 - 0.1 0.2 Ch-2 - 0.03 0.06 Ch-1 - 6.6 10 VDS = 15 V, VGS = 10 V, ID = 14.4 A Ch-2 - 10 20 VDS = 15 V, VGS = 4.5 V, ID = 5 A Ch-1 - 3.2 5 VDS = 15 V, VGS = 4.5 V, ID = 14.4 A Ch-2 - 4.5 9 VDS = 15 V, VGS = 10 V, ID = 5 A Total gate charge Ch-2 Gate-source charge Qgs Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 5 A Ch-1 - 1 - Ch-2 - 2.1 - Gate-drain charge Qgd Channel-2 VDS = 15 V, VGS = 4.5 V, ID = 14.4 A Ch-1 - 1.2 - Ch-2 - 0.7 - Ch-1 - 1.5 - Output charge Gate resistance S17-0249-Rev. A, 20-Feb-17 Qoss Rg VDS = 15 V, VGS = 0 V f = 1 MHz Ch-2 - 6.6 - Ch-1 0.2 0.85 1.7 Ch-2 0.3 1.4 2.8 pF nC  Document Number: 68128 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ346DT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. Ch-1 - 7 15 Ch-2 - 8 16 Ch-1 - 40 80 Ch-2 - 15 30 Ch-1 - 7 15 Ch-2 - 17 35 Ch-1 - 8 20 Ch-2 - 7 15 Ch-1 - 14 30 UNIT Dynamic a Turn-on delay time td(on) Rise time Turn-off delay time tr td(off) Fall time Turn-on delay time Channel-2 VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 10 V, Rg = 1  tf td(on) Rise time Turn-off delay time Channel-1 VDD = 15 V, RL = 3  ID  5 A, VGEN = 10 V, Rg = 1  tr td(off) Fall time Channel-1 VDD = 10 V, RL = 2  ID  5 A, VGEN = 4.5 V, Rg = 1  Channel-2 VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 4.5 V, Rg = 1  tf Ch-2 - 15 30 Ch-1 - 53 100 Ch-2 - 50 100 Ch-1 - 10 20 Ch-2 - 16 30 Ch-1 - 30 60 Ch-2 - 10 20 Ch-1 - - 13.4 Ch-2 - - 13.9 Ch-1 - - 25 ns Drain-Source Body Diode Characteristics Continuous source-drain diode current Pulse diode forward current (t = 100 μs) Body diode voltage TC = 25 °C IS ISM VSD Ch-2 - - 100 IS = 5 A, VGS = 0 V Ch-1 - 0.87 1.2 IS = 10 A, VGS = 0 V Ch-2 - 0.8 1.2 Ch-1 - 20 40 Ch-2 - 20 40 Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Channel-1 IF = 5 A, dI/dt = 100 A/μs, TJ = 25 °C Ch-1 - 15 30 Ch-2 - 10 20 Reverse recovery fall time ta Channel-2 IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C Ch-1 - 13 - Ch-2 - 12.5 - Ch-1 - 7 - Ch-2 - 7.5 - Reverse recovery rise time tb A V ns nC ns Notes a. Guaranteed by design, not subject to production testing b. Pulse test; pulse width  300 μs, duty cycle  2 % Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-0249-Rev. A, 20-Feb-17 Document Number: 68128 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ346DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 25 25 10000 10000 VGS = 10 V thru 4 V 10 100 5 1.5 2 2.5 3 10 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics Axis Title 5 Axis Title 0.05 500 10000 10000 400 1000 0.03 0.02 VGS = 10 V 100 0.01 Ciss 1000 300 1st line 2nd line VGS = 4.5 V 2nd line C - Capacitance (pF) 0.04 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) TC = -55 °C 0 10 1 100 TC = 25 °C TC = 125 °C 0 0.5 10 5 VGS = 3 V 0 1000 15 1st line 2nd line 1000 15 2nd line ID - Drain Current (A) 20 1st line 2nd line 2nd line ID - Drain Current (A) 20 200 100 Coss 100 Crss 0 0 10 0 5 10 15 20 25 10 0 5 10 VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current Capacitance Axis Title Axis Title VDS = 7.5 V 4 100 2 0 10 2 4 6 8 10000 ID = 5 A 1.8 1.6 1000 VGS = 10 V, 4.5 V 1st line 2nd line 1000 VDS = 24 V 2nd line RDS(on) - On-Resistance (Normalized) VDS = 15 V 1st line 2nd line 2nd line VGS - Gate-to-Source Voltage (V) ID = 5 A 6 25 2.0 10000 0 20 ID - Drain Current (A) 2nd line 10 8 15 1.4 1.2 100 1.0 0.8 0.6 10 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature S17-0249-Rev. A, 20-Feb-17 Document Number: 68128 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ346DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 10000 0.12 10 1000 TJ = 25 °C 1 100 0.1 0.2 0.4 0.6 0.8 1.0 1000 0.08 0.06 TJ = 125 °C 0.04 100 0.02 TJ = 25 °C 0 10 0 0.10 1.2 10 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 50 10000 2.2 2.0 10000 40 1000 1000 1.6 ID = 250 μA 1.4 30 1st line 2nd line 2nd line Power (W) 1.8 1st line 2nd line 2nd line VGS(th) (V) 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) TJ = 150 °C 1st line 2nd line 2nd line IS - Source Current (A) ID = 5 A 20 100 100 10 1.2 1.0 10 -50 -25 0 25 50 75 0 0.001 100 125 150 0.01 0.1 1 10 100 10 1000 TJ - Temperature (°C) 2nd line Time (s) 2nd line Threshold Voltage Single Pulse Power, Junction-to-Ambient Axis Title 10 RDS(on) Limited (1) 10000 IDM Limited ID(on) Limited 100 μs 1000 1st line 2nd line 2nd line ID - Drain Current (A) 100 1 ms 1 10 ms 100 ms 1s 10 s DC 0.1 TA = 25 °C Single pulse 100 BVDSSLimited 0.01 10 0.1 (1) 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S17-0249-Rev. A, 20-Feb-17 Document Number: 68128 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ346DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 20 16 15 1000 8 1st line 2nd line 12 2nd line Power (W) 1000 1st line 2nd line 2nd line ID - Drain Current (A) 10000 20 10000 10 100 100 5 4 0 10 0 25 50 75 100 125 150 0 10 0 25 50 75 100 125 TC - Case Temperature (°C) 2nd line TC - Ambient Temperature (°C) 2nd line Current Derating a Power, Junction-to-Case 150 Note a. The power dissipation PD is based on TJ max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S17-0249-Rev. A, 20-Feb-17 Document Number: 68128 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ346DT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 1 0.2 Notes: 0.1 0.1 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 PDM 0.05 t1 t2 t 1. Duty cycle, D = t1 2 2. Per unit base = RthJA = 71 °C/W 0.02 3. TJM - TA = PDMZthJA Single pulse 0.01 0.0001 0.001 100 (t) 4. Surface mounted 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 10000 Duty Cycle = 0.5 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.2 0.1 100 0.05 0.02 Single pulse 0.1 0.0001 10 0.001 0.01 0.1 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case S17-0249-Rev. A, 20-Feb-17 Document Number: 68128 7 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ346DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 50 50 VGS = 10 V thru 4 V 40 30 20 VGS = 3 V 1000 30 1st line 2nd line 2nd line ID - Drain Current (A) ID - Drain Current (A) 40 10000 20 100 TC = 25 °C 10 10 TC = 125 °C TC = -55 °C 0 10 0 0 0 0.5 1 1.5 VDS - Drain-to-Source Voltage (V) 1 2 2 3 4 VGS - Gate-to-Source Voltage (V) 2nd line Transfer Characteristics Output Characteristics 840 0.0215 RDS(on) - On-Resistance (Ω) Ciss C - Capacitance (pF) 630 0.0165 VGS = 4.5 V 0.0115 VGS = 10 V Coss 210 0.0065 Crss 0.0015 0 0 10 20 30 40 50 0 6 12 18 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.65 ID = 14.4 A RDS(on) - On-Resistance (Normalized) VDS = 8 V 8 6 VDS = 15 V, 24 V 4 2 0 0 24 ID - Drain Current (A) 10 VGS - Gate-to-Source Voltage (V) 420 2 4 6 Qg - Total Gate Charge (nC) Gate Charge S17-0249-Rev. A, 20-Feb-17 8 10 30 VGS = 10 V, 14.4 A VGS = 4.5 V, 13 A 1.4 1.15 0.9 0.65 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 68128 8 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ346DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.030 100 ID =14.4 A RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.024 TJ = 150 °C 10 TJ = 25 °C 1 0.018 TJ = 125 °C 0.012 TJ = 25 °C 0.006 0.000 0.1 0.0 0.3 0.6 0.9 2 1.2 4 VSD - Source-to-Drain Voltage (V) 50 ID = 250 μA 40 1.35 30 Power (W) VGS(th) (V) 10 On-Resistance vs. Gate-to-Source Voltage 1.60 1.10 0.85 0.60 - 50 8 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 1.85 6 20 10 - 25 0 25 50 75 100 125 150 0 0.001 0.01 TJ - Temperature (°C) Threshold Voltage 0.1 1 Time (s) 10 100 1000 Single Pulse Power, Junction-to-Ambient 100 Limited by IDM Limited by RDS(on)* ID - Drain Current (A) 10 100 μs 1 ms 1 10 ms 100 ms 10 s, 1 s 0.1 DC TA = 25 °C BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S17-0249-Rev. A, 20-Feb-17 Document Number: 68128 9 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ346DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 35 20 Package Limited 15 Power (W) ID - Drain Current (A) 28 21 10 14 5 7 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating a 125 150 0 25 50 75 100 TC - Case Temperature (°C) 125 150 Power, Junction-to-Case Note a. The power dissipation PD is based on TJ max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S17-0249-Rev. A, 20-Feb-17 Document Number: 68128 10 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ346DT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 t2 1. Duty Cycle, D = 0.05 0.02 t1 t2 2. Per Unit Base = RthJA = 69 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68128. S17-0249-Rev. A, 20-Feb-17 Document Number: 68128 11 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAIR® 3 x 3 Case Outline D 8 7 6 A A1 5 K2 D2 5 6 K2 7 8 E1 K L d 0.10 C 2X * 1 2 3 d 0.10 C 2X 0.10 4 0.15 4 3 2 1 e b b1 0.10 C A f E2 K1 E 9 Note * Indicates pin #1 orientation (optional) c C d 0.08 C MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. MAX. A 0.70 0.75 0.80 0.028 0.030 0.031 A1 0.00 0.05 0.000 b 0.35 0.40 0.45 0.014 0.016 0.018 b1 0.20 0.25 0.38 0.008 0.010 0.015 C 0.18 0.20 0.23 0.007 0.008 0.009 D 2.90 3.00 3.10 0.114 0.118 0.122 D2 2.35 2.40 2.45 0.093 0.094 0.096 E 2.90 3.00 3.10 0.114 0.118 0.122 E1 0.94 0.99 1.04 0.037 0.039 0.041 E2 0.47 0.52 0.57 0.019 0.020 0.022 e 0.002 0.65 BSC 0.026 BSC K 0.25 typ. 0.010 typ. K1 0.35 typ. 0.014 typ. K2 0.30 typ. L 0.27 0.32 0.012 typ. 0.37 0.011 0.013 0.015 ECN: T12-0347-Rev. C, 18-Jun-12 DWG: 5998 Revison: 18-Jun-12 1 Document Number: 67698 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern Vishay Siliconix RECOMMENDED MINIMUM PAD FOR PowerPAIR® 3 x 3 0.450 0.650 (0.018) (0.026) 0.450 (0.018) 1.036 2.450 (0.096) 0.084 (0.003) (0.041) 0.209 (0.008) 0.306 (0.012) 0.562 (0.022) (0.063) 1.611 0.390 (0.015) 1.200 (0.047) Recommended PAD for PowerPAIR 3 x 3 Dimensions in millimeters (inches) Keep-Out 3.5 mm x 3.5 mm for non terminating traces Document Number: 63294 Revision: 25-May-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000