SiZ348DT
www.vishay.com
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET
FEATURES
PowerPAIR® 3 x 3
G2
S2 8
S2 7
S2 6
5
S1/D2
(Pin 9)
D1
3
m
m
1
3
mm
Top View
1
2 G1
3 D1
4 D1
D1
Bottom View
MOSFET CHANNEL-1 AND CHANNEL-2
0.00712
RDS(on) max. () at VGS = 4.5 V
0.01019
ID (A) a, d
Configuration
D1
Synchronous buck
DC/DC conversion
Half bridge
POL
G1
N-Channel 1
MOSFET
30
RDS(on) max. () at VGS = 10 V
Qg typ. (nC)
APPLICATIONS
•
•
•
•
PRODUCT SUMMARY
VDS (V)
• TrenchFET® Gen IV power MOSFET
• High side and low side MOSFETs form optimized
combination for 50 % duty cycle
• Optimized RDS - Qg and RDS - Qgd FOM elevates
efficiency for high frequency switching
• 100 % Rg and UIS tested
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
S1/D2
G2
5.7
30
N-Channel 2
MOSFET
Dual
S2
ORDERING INFORMATION
Package
PowerPAIR 3 x 3
Lead (Pb)-free and halogen-free
SiZ348DT-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
CHANNEL-1 AND CHANNEL-2
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
30
Gate-source voltage
VGS
+20 / -16
TC = 70 °C
TA = 25 °C
ID
Continuous source current (MOSFET diode conduction)
Single pulse avalanche current
Single pulse avalanche energy
IDM
TC = 25 °C
TA = 25 °C
L = 0.1 mH
IS
IAS
EAS
TC = 25 °C
Maximum power dissipation
TC = 70 °C
TA = 25 °C
Operating junction and storage temperature range
18 b, c
100
A
13.9
3.1 b, c
10
5
mJ
16.7
PD
10.7
3.7 b, c
W
2.4 b, c
TA = 70 °C
Soldering recommendations (peak temperature)
30 a
14.4 b, c
TA = 70 °C
Pulsed drain current (t = 100 μs)
V
30 a
TC = 25 °C
Continuous drain current (TJ = 150 °C)
UNIT
TJ, Tstg
-55 to +150
260
°C
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. TC = 25 °C
S17-1873-Rev. A, 25-Dec-17
Document Number: 76014
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiZ348DT
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
CHANNEL-1 AND CHANNEL-2
PARAMETER
Maximum junction-to-ambient
a, b
Maximum junction-to-case (drain)
SYMBOL
TYPICAL
MAXIMUM
t 10 s
RthJA
27
34
Steady state
RthJC
6
7.5
UNIT
°C/W
Notes
a. Surface mounted on 1" x 1" FR4 board
b. Maximum under steady state conditions is 69 °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
CHANNEL-1 AND CHANNEL-2
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
VDS
VGS = 0 V, ID = 250 μA
30
-
-
VGS(th)
VDS = VGS, ID = 250 μA
1
-
2.4
IGSS
VDS = 0 V, VGS = +20 V / -16 V
-
-
± 100
VDS = 30 V, VGS = 0 V
-
-
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
-
-
5
VDS 5 V, VGS = 10 V
40
-
-
A
VGS = 10 V, ID = 15 A
-
0.00593
0.00712
VGS = 4.5 V, ID = 10 A
-
0.00849
0.01019
VDS = 10 V, ID = 15 A
-
46
-
Zero gate voltage drain current
IDSS
On-state drain current a
ID(on)
Drain-source on-state resistance a
Forward transconductance a
RDS(on)
gfs
V
nA
μA
S
Dynamic b
Input capacitance
Ciss
-
820
Output capacitance
Coss
-
370
-
Reverse transfer capacitance
Crss
-
40
-
VDS = 15 V, VGS = 0 V, f = 1 MHz
Crss/Ciss ratio
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Gate resistance
Rg
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
S17-1873-Rev. A, 25-Dec-17
-
0.049
0.098
-
12.1
18.2
-
5.7
7.5
VDS = 15 V, VGS = 4.5 V, ID = 18 A
-
2.6
-
-
1.1
-
f = 1 MHz
0.2
0.8
1.6
-
10
20
-
25
50
20
VDS = 15 V, VGS = 10 V, ID = 18 A
td(on)
tr
td(off)
VDD = 15 V, RL = 1.04 , ID 14.4 A,
VGEN = 10 V, Rg = 1
-
10
tf
-
10
20
td(on)
-
15
30
-
50
75
-
10
20
-
20
40
tr
td(off)
tf
VDD = 15 V, RL = 1.04 , ID 14.4 A,
VGEN = 4.5 V, Rg = 1
pF
nC
ns
Document Number: 76014
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiZ348DT
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
CHANNEL-1 AND CHANNEL-2
SYMBOL
TEST CONDITIONS
IS
TC = 25°C
MIN.
TYP.
MAX.
UNIT
Drain-source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
ISM
Body diode voltage
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
-
-
30
-
-
100
IS = 15.2 A, VGS = 0 V
-
0.85
1.2
-
31
48
ns
IF = 15.2 A, di/dt = 100 A/μs,
TJ = 25 °C
-
26
40
nC
-
17
-
-
14
-
A
V
ns
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-1873-Rev. A, 25-Dec-17
Document Number: 76014
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiZ348DT
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
100
70
10000
10000
VGS = 10 V thru 5 V
40
100
20
1000
TC = 125 °C
42
1st line
2nd line
1000
60
2nd line
ID - Drain Current (A)
56
VGS = 4 V
1st line
2nd line
2nd line
ID - Drain Current (A)
80
28
TC = 25 °C
100
14
VGS = 3 V
TC = -55 °C
0
0
10
0
0.4
0.8
1.2
1.6
2
10
0
1
2
VGS - Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
Axis Title
10000
1200
10000
Ciss
VGS = 4.5 V
0.010
100
1000
600
Coss
100
300
VGS = 10 V
Crss
0
0
10
0
20
40
60
80
10
0
5
10
15
20
ID - Drain Current (A)
2nd line
VDS - Drain-to-Source Voltage (V)
2nd line
On-Resistance vs. Drain Current and Gate
Capacitance
Axis Title
Axis Title
10
1.6
VDS = 8 V
8
1000
1st line
2nd line
VDS = 15 V
6
VDS = 24 V
4
100
2
0
10
0
2.6
5.2
7.8
10.4
13
2nd line
RDS(on) - On-Resistance (Normalized)
10000
ID = 18 A
25
10000
VDS = 10 V, ID = 15 A
1.4
1000
1.2
VGS = 4.5 V,
ID = 10 A
1.0
100
0.8
0.6
10
-50
-25
0
25
50
75
100 125 150
Qg - Total Gate Charge (nC)
2nd line
TJ - Junction Temperature (°C)
2nd line
Gate Charge
On-Resistance vs. Junction Temperature
S17-1873-Rev. A, 25-Dec-17
1st line
2nd line
0.005
900
1st line
2nd line
1000
0.015
2nd line
C - Capacitance (pF)
0.020
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
4
VDS - Drain-to-Source Voltage (V)
2nd line
0.025
2nd line
VGS - Gate-to-Source Voltage (V)
3
Document Number: 76014
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiZ348DT
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
0.020
2nd line
RDS(on) - On-Resistance (Ω)
10000
TJ = 150 °C
1000
1
1st line
2nd line
2nd line
IS - Source Current (A)
10
TJ = 25 °C
0.1
100
0.01
0.001
0.015
1000
0.2
0.4
0.6
0.8
1.0
TJ = 150 °C
0.010
TJ = 25 °C
100
0.005
0
10
0
10000
1st line
2nd line
100
1.2
10
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
ID = 250 μA
2.1
40
1000
1.9
1.7
1.5
Power (W)
1st line
2nd line
2nd line
VGS(th) (V)
50
10000
2.3
30
20
100
10
1.3
1.1
10
-50
-25
0
25
50
75
0
100 125 150
0.001
0.01
0.1
TJ - Temperature (°C)
2nd line
Threshold Voltage
1
Time (s)
10
100
1000
Single Pulse Power
Axis Title
1000
10000
IDM limited
Limited by
RDS(on)
1000
10
100 μs
1st line
2nd line
2nd line
ID - Drain Current (A)
100
1 ms
1
10 ms
100 ms
100
10 s, 1 s
0.1
DC
TA = 25 °C
Single pulse
BVDSS limited
0.01
10
0.1
(1)
1
10
100
VDS - Drain-to-Source Voltage (V)
VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S17-1873-Rev. A, 25-Dec-17
Document Number: 76014
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiZ348DT
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
45
10000
1000
27
1st line
2nd line
2nd line
ID - Drain Current (A)
36
18
100
9
0
10
0
25
50
75
100
125
150
TC - Case Temperature (°C)
2nd line
20
2.2
15
1.7
Power (W)
Power (W)
Current Derating a
10
1.1
0.6
5
0.0
0
0
25
50
75
100
TC - Case Temperature (°C)
125
Power, Junction-to-Case
150
0
25
50
75
100
TA - Ambient Temperature (°C)
125
150
Power, Junction-to-Ambient
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S17-1873-Rev. A, 25-Dec-17
Document Number: 76014
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiZ348DT
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
t1
t2
1. Duty Cycle, D =
0.05
0.02
t1
t2
2. Per Unit Base = RthJA = 69 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?76014.
S17-1873-Rev. A, 25-Dec-17
Document Number: 76014
7
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAIR® 3 x 3 Case Outline
D
8
7
6
A
A1
5
K2
D2
5
6
K2
7
8
E1
K
L
d 0.10 C
2X
*
1
2
3
d 0.10 C
2X
0.10
4
0.15
4
3
2
1
e
b
b1
0.10 C
A
f
E2
K1
E
9
Note
* Indicates pin #1 orientation (optional)
c
C
d
0.08 C
MILLIMETERS
INCHES
DIM.
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.70
0.75
0.80
0.028
0.030
0.031
A1
0.00
0.05
0.000
b
0.35
0.40
0.45
0.014
0.016
0.018
b1
0.20
0.25
0.38
0.008
0.010
0.015
C
0.18
0.20
0.23
0.007
0.008
0.009
D
2.90
3.00
3.10
0.114
0.118
0.122
D2
2.35
2.40
2.45
0.093
0.094
0.096
E
2.90
3.00
3.10
0.114
0.118
0.122
E1
0.94
0.99
1.04
0.037
0.039
0.041
E2
0.47
0.52
0.57
0.019
0.020
0.022
e
0.002
0.65 BSC
0.026 BSC
K
0.25 typ.
0.010 typ.
K1
0.35 typ.
0.014 typ.
K2
0.30 typ.
L
0.27
0.32
0.012 typ.
0.37
0.011
0.013
0.015
ECN: T12-0347-Rev. C, 18-Jun-12
DWG: 5998
Revison: 18-Jun-12
1
Document Number: 67698
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
Vishay Siliconix
RECOMMENDED MINIMUM PAD FOR PowerPAIR® 3 x 3
0.450
0.650
(0.018)
(0.026)
0.450
(0.018)
1.036
2.450
(0.096)
0.084
(0.003)
(0.041)
0.209
(0.008)
0.306
(0.012)
0.562
(0.022)
(0.063)
1.611
0.390
(0.015)
1.200
(0.047)
Recommended PAD for PowerPAIR 3 x 3
Dimensions in millimeters (inches)
Keep-Out 3.5 mm x 3.5 mm for non terminating traces
Document Number: 63294
Revision: 25-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000