SIZ350DT-T1-GE3

SiZ350DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PowerPAIR® 3 x 3 G2 S2 8 S2 7 S2 6 5 S1/D2 (Pin 9) D1 3 m m 1 3 mm Top View 1 2 G1 3 D1 4 D1 D1 Bottom View MOSFET CHANNEL-1 AND CHANNEL-2 0.00675 RDS(on) max. () at VGS = 4.5 V 0.00944 ID (A) a, d Configuration D1 Synchronous buck DC/DC conversion Half bridge POL G1 N-Channel 1 MOSFET 30 RDS(on) max. () at VGS = 10 V Qg typ. (nC) APPLICATIONS • • • • PRODUCT SUMMARY VDS (V) • TrenchFET® Gen IV power MOSFET • High side and low side MOSFETs form optimized combination for 50 % duty cycle • Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency for high frequency switching • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S1/D2 G2 6.3 30 N-Channel 2 MOSFET Dual S2 ORDERING INFORMATION Package PowerPAIR 3 x 3 Lead (Pb)-free and halogen-free SiZ350DT-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) CHANNEL-1 AND CHANNEL-2 PARAMETER SYMBOL LIMIT Drain-source voltage VDS 30 Gate-source voltage VGS +16 / -12 TC = 70 °C TA = 25 °C ID Continuous source current (MOSFET diode conduction) Single pulse avalanche current Single pulse avalanche energy IDM TC = 25 °C TA = 25 °C L = 0.1 mH IS IAS EAS TC = 25 °C Maximum power dissipation TC = 70 °C TA = 25 °C Operating junction and storage temperature range 18.5 b, c 100 A 13.9 3.1 b, c 10 5 mJ 16.7 PD 10.7 3.7 b, c W 2.4 b, c TA = 70 °C Soldering recommendations (peak temperature) 30 a 14.8 b, c TA = 70 °C Pulsed drain current (t = 100 μs) V 30 a TC = 25 °C Continuous drain current (TJ = 150 °C) UNIT TJ, Tstg -55 to +150 260 °C Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. TC = 25 °C S17-1893-Rev. A, 25-Dec-17 Document Number: 76540 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ350DT www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS CHANNEL-1 AND CHANNEL-2 PARAMETER Maximum junction-to-ambient a, b Maximum junction-to-case (drain) SYMBOL TYPICAL MAXIMUM t  10 s RthJA 27 34 Steady state RthJC 6 7.5 UNIT °C/W Notes a. Surface mounted on 1" x 1" FR4 board b. Maximum under steady state conditions is 69 °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER CHANNEL-1 AND CHANNEL-2 SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage VDS VGS = 0 V, ID = 250 μA 30 - - VGS(th) VDS = VGS, ID = 250 μA 1 - 2.4 IGSS VDS = 0 V, VGS = +16 V / -12 V - - ± 100 VDS = 30 V, VGS = 0 V - - 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C - - 5 VDS  5 V, VGS = 10 V 40 - - A VGS = 10 V, ID = 15 A - 0.00563 0.00675 VGS = 4.5 V, ID = 10 A - 0.00787 0.00944  VDS = 10 V, ID = 15 A - 46 - Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs V nA μA S Dynamic b Input capacitance Ciss - 940 Output capacitance Coss - 375 - Reverse transfer capacitance Crss - 40 - VDS = 15 V, VGS = 0 V, f = 1 MHz Crss/Ciss ratio Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time S17-1893-Rev. A, 25-Dec-17 - 0.043 0.086 - 13.5 20.3 - 6.3 10 VDS = 15 V, VGS = 4.5 V, ID = 18.5 A - 2.8 - - 1.2 - f = 1 MHz 0.2 0.8 1.6 - 10 20 - 25 50 30 VDS = 15 V, VGS = 10 V, ID = 18.5 A td(on) tr td(off) VDD = 15 V, RL = 1 , ID  14.8 A, VGEN = 10 V, Rg = 1  - 15 tf - 10 20 td(on) - 15 30 - 45 68 - 10 20 - 25 50 tr td(off) tf VDD = 15 V, RL = 1 , ID  14.8 A, VGEN = 4.5 V, Rg = 1  pF nC  ns Document Number: 76540 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ350DT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER CHANNEL-1 AND CHANNEL-2 SYMBOL TEST CONDITIONS IS TC = 25°C MIN. TYP. MAX. UNIT Drain-source Body Diode Characteristics Continuous source-drain diode current Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb - - 13.9 - - 100 IS = 14.8 A, VGS = 0 V - 0.85 1.2 - 30 45 ns IF = 14.8 A, di/dt = 100 A/μs, TJ = 25 °C - 30 45 nC - 17 - - 13 - A V ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-1893-Rev. A, 25-Dec-17 Document Number: 76540 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ350DT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 50 10000 10000 VGS = 10 V thru 5 V 40 100 VGS = 3 V 1000 TC = 125 °C 30 1st line 2nd line 1000 60 2nd line ID - Drain Current (A) 40 VGS = 4 V 1st line 2nd line 2nd line ID - Drain Current (A) 80 20 100 TC = 25 °C 10 20 TC = -55 °C 0 0 10 0 0.4 0.8 1.2 1.6 2 10 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics Axis Title Axis Title 10000 1200 10000 0.020 VGS = 4.5 V 0.010 VGS = 10 V 100 0.005 900 1000 1st line 2nd line 1000 2nd line C - Capacitance (pF) 0.015 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) Ciss 600 100 Coss 300 Crss 0 0 10 20 40 60 10 0 80 5 10 20 25 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current and Gate Capacitance Axis Title 1000 1st line 2nd line VDS = 6 V VDS = 20 V 4 100 2 0 10 0 3 6 9 12 15 2nd line RDS(on) - On-Resistance (Normalized) VDS = 12.5 V 8 6 10000 1.6 10000 ID = 18.5 A 30 Axis Title 10 2nd line VGS - Gate-to-Source Voltage (V) 15 VGS = 10 V, ID = 18 A 1.4 1000 1.2 VGS = 4.5 V, ID = 15 A 100 1.0 0.8 10 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature S17-1893-Rev. A, 25-Dec-17 1st line 2nd line 0 Document Number: 76540 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ350DT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 0.020 2nd line RDS(on) - On-Resistance (Ω) 10000 TJ = 150 °C 1000 1 1st line 2nd line 2nd line IS - Source Current (A) 10 TJ = 25 °C 0.1 100 0.01 0.001 0.015 1000 0.2 0.4 0.6 0.8 1.0 TJ = 150 °C 0.010 TJ = 25 °C 100 0.005 0 10 0 10000 1st line 2nd line 100 1.2 10 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title 1.9 ID = 250 μA 1.7 40 1000 1.5 1.3 Power (W) 1st line 2nd line 2nd line VGS(th) (V) 50 10000 30 20 100 1.1 10 0.9 10 -50 -25 0 25 50 75 0 100 125 150 0.001 0.01 0.1 TJ - Temperature (°C) 2nd line Threshold Voltage 1 Time (s) 10 100 1000 Single Pulse Power Axis Title 1000 10000 IDM limited Limited by RDS(on) 1000 10 100 μs 1st line 2nd line 2nd line ID - Drain Current (A) 100 1 ms 1 10 ms 100 ms 10 s, 1 s 0.1 100 DC TA = 25 °C Single pulse BVDSS limited 0.01 10 0.1 (1) 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S17-1893-Rev. A, 25-Dec-17 Document Number: 76540 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ350DT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 45 10000 1000 Package Limited 27 1st line 2nd line 2nd line ID - Drain Current (A) 36 18 100 9 0 10 0 25 50 75 100 125 150 TC - Case Temperature (°C) 2nd line 20 2.2 15 1.7 Power (W) Power (W) Current Derating a 10 1.1 0.6 5 0.0 0 0 25 50 75 100 TC - Case Temperature (°C) 125 Power, Junction-to-Case 150 0 25 50 75 100 TA - Ambient Temperature (°C) 125 150 Power, Junction-to-Ambient Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S17-1893-Rev. A, 25-Dec-17 Document Number: 76540 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ350DT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 t2 1. Duty Cycle, D = 0.05 0.02 t1 t2 2. Per Unit Base = RthJA = 69 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?76540. S17-1893-Rev. A, 25-Dec-17 Document Number: 76540 7 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAIR® 3 x 3 Case Outline D 8 7 6 A A1 5 K2 D2 5 6 K2 7 8 E1 K L d 0.10 C 2X * 1 2 3 d 0.10 C 2X 0.10 4 0.15 4 3 2 1 e b b1 0.10 C A f E2 K1 E 9 Note * Indicates pin #1 orientation (optional) c C d 0.08 C MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. MAX. A 0.70 0.75 0.80 0.028 0.030 0.031 A1 0.00 0.05 0.000 b 0.35 0.40 0.45 0.014 0.016 0.018 b1 0.20 0.25 0.38 0.008 0.010 0.015 C 0.18 0.20 0.23 0.007 0.008 0.009 D 2.90 3.00 3.10 0.114 0.118 0.122 D2 2.35 2.40 2.45 0.093 0.094 0.096 E 2.90 3.00 3.10 0.114 0.118 0.122 E1 0.94 0.99 1.04 0.037 0.039 0.041 E2 0.47 0.52 0.57 0.019 0.020 0.022 e 0.002 0.65 BSC 0.026 BSC K 0.25 typ. 0.010 typ. K1 0.35 typ. 0.014 typ. K2 0.30 typ. L 0.27 0.32 0.012 typ. 0.37 0.011 0.013 0.015 ECN: T12-0347-Rev. C, 18-Jun-12 DWG: 5998 Revison: 18-Jun-12 1 Document Number: 67698 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern Vishay Siliconix RECOMMENDED MINIMUM PAD FOR PowerPAIR® 3 x 3 0.450 0.650 (0.018) (0.026) 0.450 (0.018) 1.036 2.450 (0.096) 0.084 (0.003) (0.041) 0.209 (0.008) 0.306 (0.012) 0.562 (0.022) (0.063) 1.611 0.390 (0.015) 1.200 (0.047) Recommended PAD for PowerPAIR 3 x 3 Dimensions in millimeters (inches) Keep-Out 3.5 mm x 3.5 mm for non terminating traces Document Number: 63294 Revision: 25-May-11 www.vishay.com 1 This document is subject to change without notice. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000