SIZ700DT-T1-GE3

SiZ700DT Vishay Siliconix N-Channel 20-V (D-S) MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) () ID (A) 0.0086 at VGS = 10 V 16a 0.0108 at VGS = 4.5 V 16a 0.0058 at VGS = 10 V 16a 0.0066 at VGS = 4.5 V 16a Qg (Typ.) 9.5 nC 27 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Notebook System Power • POL PowerPAIR® 6 x 3.7 D1 Pin 1 3.73 mm G1 1 D1 2 D1 S1/D2 (Pin 7) G2 6 S2 5 S2 D1 G1 3 N-Channel 1 MOSFET S1/D2 6 mm G2 4 N-Channel 2 MOSFET Ordering Information: SiZ700DT-T1-GE3 (Lead (Pb)-free and Halogen-free) S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IDM Pulsed Drain Current Source Drain Current Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e ID TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS PD Channel-1 20 Channel-2 20 ± 16 16a 16a 13.1b, c 10.5b, c 60 14.7 1.96b, c 2.36 1.5 1.4b, c 0.9b, c TJ, Tstg 16a 16a 17.3b, c 13.9b, c 60 16a 2.3b, c 2.8 1.78 1.47b, c 0.94b, c - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Channel-1 Parameter Symbol RthJA RthJC Typ. Max. Channel-2 Typ. Max. Unit t  10 s 39 53 33 45 Maximum Junction-to-Ambientb, f °C/W Maximum Junction-to-Case (Drain) Steady State 5.7 7.1 3.7 4.6 Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 90 °C/W for channel-1 and 85 °C/W for channel-2. Document Number: 69090 S11-2379-Rev. B, 28-Nov-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ700DT Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 µA Ch-1 20 VGS = 0 V, ID = 250 µA Ch-2 20 ID = 250 µA Ch-1 ID = 250 µA Ch-2 21 ID = 250 µA Ch-1 - 5.8 V 21 mV/°C ID = 250 µA Ch-2 VDS = VGS, ID = 250 µA Ch-1 0.8 2.2 VDS = VGS, ID = 250 µA Ch-2 0.8 2.2 - 5.8 Ch-1 ± 100 Ch-2 ± 100 VDS = 20 V, VGS = 0 V Ch-1 1 VDS = 20 V, VGS = 0 V Ch-2 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C Ch-1 10 VDS = 20 V, VGS = 0 V, TJ = 55 °C Ch-2 VDS 5 V, VGS = 10 V Ch-1 30 VDS 5 V, VGS = 10 V Ch-2 30 VGS = 10 V, ID = 15 A Ch-1 0.007 VGS = 10 V, ID = 20 A Ch-2 0.0047 0.0058 VGS = 4.5 V, ID = 10 A Ch-1 0.0088 0.0108 VGS = 4.5 V, ID = 15 A Ch-2 0.0054 0.0066 VDS = 10 V, ID = 15 A Ch-1 60 VDS = 10 V, ID = 20 A Ch-2 100 Ch-1 1300 Ch-2 3860 Ch-1 290 Ch-2 760 Ch-1 132 Ch-2 350 VDS = 10 V, VGS = 10 V, ID = 15 A Ch-1 20 VDS = 10 V, VGS = 10 V, ID = 20 A Ch-2 55 85 Ch-1 9.5 15 45 VDS = 0 V, VGS = ± 16 V V nA µA 10 A 0.0086  S Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Ciss Channel-1 VDS = 10 V, VGS = 0 V, f = 1 MHz Coss Crss Qg Channel-2 VDS = 10 V, VGS = 0 V, f = 1 MHz Channel-1 VDS = 10 V, VGS = 4.5 V, ID = 15 A Ch-2 27 Ch-1 3.2 Channel-2 VDS = 10 V, VGS = 4.5 V, ID = 20 A Ch-2 9.2 Ch-1 2.4 Qgs Qgd Rg Ch-2 f = 1 MHz pF 35 nC 7.1 Ch-1 0.3 1.3 2.6 Ch-2 0.2 1 2  Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. www.vishay.com 2 Document Number: 69090 S11-2379-Rev. B, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ700DT Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Ch-1 9 15 Ch-2 13 20 Ch-1 8 15 Unit Dynamica Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf td(on) tr Channel-1 VDD = 10 V, RL = 10  ID  1 A, VGEN = 4.5 V, Rg = 1  Channel-2 VDD = 10 V, RL = 10  ID  1 A, VGEN = 4.5 V, Rg = 1  Channel-1 VDD = 10 V, RL = 10  ID  1 A, VGEN = 10 V, Rg = 1  tf Channel-2 VDD = 10 V, RL = 10  ID  1 A, VGEN = 10 V, Rg = 1  IS TC = 25 °C td(off) Ch-2 8 15 Ch-1 25 40 Ch-2 52 80 Ch-1 8 15 Ch-2 15 25 Ch-1 8 15 Ch-2 12 20 Ch-1 9 15 Ch-2 8 15 Ch-1 25 40 Ch-2 47 75 Ch-1 8 15 Ch-2 10 15 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time ISM VSD 16 Ch-1 60 Ch-2 0.8 1.2 IS = 2.3 A, VGS = 0 V Ch-2 0.8 1.2 Ch-1 25 50 Ch-2 40 80 Ch-1 13 25 Ch-2 31 60 Ch-1 12 Ch-2 21 Ch-1 13 Ch-2 19 Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Channel-2 IF = 2.3 A, dI/dt = 100 A/µs, TJ = 25 °C A 60 Ch-1 trr tb 14.7 Ch-2 IS = 2 A, VGS = 0 V Channel-1 IF = 2 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Rise Time Ch-1 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 69090 S11-2379-Rev. B, 28-Nov-11 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ700DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 60 1.2 VGS = 10 V thru 4 V 1.0 VGS = 3 V I D - Drain Current (A) I D - Drain Current (A) 45 30 0.8 0.6 0.4 TC = 25 °C 15 0.2 TC = 125 °C TC = - 55 °C 0 0.0 0.3 0.6 0.9 1.2 0.0 0.0 1.5 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.016 3.0 1800 Ciss C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1500 0.012 VGS = 4.5 V 0.008 VGS = 10 V 1200 900 600 Coss 0.004 300 Crss 0.000 0 0 15 30 45 60 0 5 ID - Drain Current (A) On-Resistance vs. Drain Current 15 20 Capacitance 10 1.8 R DS(on) - On-Resistance (Normalized) ID = 15 A VGS - Gate-to-Source Voltage (V) 10 VDS - Drain-to-Source Voltage (V) 8 VDS = 10 V 6 VDS = 5 V VDS = 15 V 4 2 0 0 5 10 15 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 20 ID = 15 A 1.5 VGS = 10 V 1.2 VGS = 4.5 V 0.9 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 69090 S11-2379-Rev. B, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ700DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.030 I S - Source Current (A) TJ = 150 °C TJ = 25 °C 1 0.1 TJ = - 50 °C 0.01 0.001 0.0 R DS(on) - On-Resistance (Ω) 0.025 10 0.020 0.015 TJ = 125 °C 0.010 0.005 TJ = 25 °C 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 60 0.5 50 40 - 0.1 ID = 5 mA - 0.4 Power (W) VGS(th) Variance (V) 0.2 30 20 ID = 250 µA - 0.7 - 1.0 -50 10 0 -25 0 25 50 75 100 125 150 0 .001 0.01 TJ - Temperature (°C) Threshold Voltage 1 10 Single Pulse Power 100 Limited by RDS(on)* 10 µs 100 µs 10 I D - Drain Current (A) 0.1 Time (s) 1 ms 10 ms 1 100 ms 1 s, 10 s 0.1 100 s, DC TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 69090 S11-2379-Rev. B, 28-Nov-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ700DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 40 I D - Drain Current (A) 30 20 Package Limited 10 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 25 1.76 20 Power (W) Power (W) 1.32 15 10 0.88 0.44 5 0 0.00 0 25 50 75 100 125 150 0 25 50 75 100 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 125 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 69090 S11-2379-Rev. B, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ700DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 90 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 69090 S11-2379-Rev. B, 28-Nov-11 www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ700DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 60 1.2 VGS = 10 V thru 3 V 1.0 I D - Drain Current (A) I D - Drain Current (A) 45 30 0.8 0.6 0.4 TC = 25 °C 15 0.2 TC = 125 °C 0 0.0 0.2 0.4 0.6 0.8 TC = - 55 °C 0.0 0.0 1.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.010 5000 0.008 4000 3.0 VGS = 4.5 V 0.006 VGS = 10 V 0.004 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) Ciss 3000 2000 Coss 0.002 1000 0.000 0 Crss 0 15 30 45 0 60 5 15 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 10 1.6 R DS(on) - On-Resistance (Normalized) ID = 20 A VGS - Gate-to-Source Voltage (V) 10 8 VDS = 10 V 6 VDS = 5 V VDS = 15 V 4 2 0 0 11 22 33 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 8 44 55 ID = 20 A VGS = 10 V 1.4 1.2 VGS = 4.5 V 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 69090 S11-2379-Rev. B, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ700DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 I S - Source Current (A) 10 TJ = 25 °C TJ = 150 °C 1 0.1 TJ = - 50 °C 0.01 R DS(on) - On-Resistance (Ω) 0.020 0.015 0.010 TJ = 125 °C 0.005 TJ = 25 °C 0.001 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 1 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.5 150 0.2 120 Power (W) VGS(th) Variance (V) 2 - 0.1 ID = 5 mA - 0.4 90 60 ID = 250 µA - 0.7 - 1.0 - 50 30 0 - 25 0 25 50 75 100 125 150 0 .001 0.01 0.1 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 Limited by RDS(on)* 10 10 µs, 100 µs 10 I D - Drain Current (A) 1 1 ms 10 ms 1 100 ms 1s 10 s 0.1 100 s, DC TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 69090 S11-2379-Rev. B, 28-Nov-11 www.vishay.com 9 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ700DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) I D - Drain Current (A) 60 45 30 Package Limited 15 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 40 1.76 32 Power (W) Power (W) 1.32 24 16 0.88 0.44 8 0 0.00 0 25 50 75 100 TC - Case Temperature (°C) Power, Junction-to-Case 125 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 69090 S11-2379-Rev. B, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ700DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 85 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 10 -2 4. Surface Mounted 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69090. Document Number: 69090 S11-2379-Rev. B, 28-Nov-11 www.vishay.com 11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix PowerPAIRTM 6 x 3.7 CASE OUTLINE A D 0.10 C 2X Pin 5 K2 K2 Pin 4 Pin 4 Pin 5 Pin 6 K L Pin 6 E E1 D1 K1 Pin #1 Ident (Optional) Pin 1 Pin 2 0.10 C Pin 3 Pin 2 Pin 3 2X E2 D1 Pin 1 e b BACK SIDE VIEW b1 C A1 C A 0.08 c 0.10 C Z Z MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. MAX. A 0.70 0.75 0.80 0.028 0.030 0.032 A1 0.00 - 0.05 0.000 - 0.002 b 0.46 0.51 0.56 0.018 0.020 0.022 b1 0.20 0.25 0.38 0.008 0.010 0.015 C 0.18 0.20 0.23 0.007 0.008 0.009 D 3.65 3.73 3.81 0.144 0.147 0.150 D1 2.41 2.53 2.65 0.095 0.100 0.104 E 5.92 6.00 6.08 0.233 0.236 0.239 E1 2.62 2.67 2.72 0.103 0.105 0.107 E2 0.87 0.92 0.97 0.034 0.036 0.038 e 1.27 BSC 0.05 BSC K 0.45 TYP. 0.018 TYP. K1 0.66 TYP. 0.026 TYP. K2 L 0.60 TYP. 0.38 0.43 0.024 TYP. 0.48 0.015 0.017 0.019 ECN: S-82772-Rev. B, 17-Nov-08 DWG: 5979 Document Number: 69028 17-Nov-08 www.vishay.com 1 PAD Pattern Vishay Siliconix RECOMMENDED PAD FOR PowerPAIR™ 6 x 3.7 0.3520 (8.941) 0.0220 (0.559) 0.0190 (0.483) 0, 0.11 0.0170 (0.432) 0, 0.03 0.1070 (2.718) 0.1040 (2.642) 0.4390 (11.151) 0, 0 0.0220 (0.559) 0, - 0.0645 0.0170 (0.432) 0.0380 (0.965) - 0.05, - 0.11 0, - 0.11 1 0.0500 (1.27) Recommended PAD for PowerPAIR 6 x 3.7 Dimensions in inches (mm) Keep-out 0.3520 (8.94) x 0.4390 (11.151) Document Number: 65278 Revision: 04-Aug-09 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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