SIZ702DT-T1-GE3

SiZ702DT Vishay Siliconix N-Channel 30 V (D-S) MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 and Channel-2 30 RDS(on) () ID (A) 0.0120 at VGS = 10 V 16a 0.0145 at VGS = 4.5 V 16a Qg (Typ.) 6.8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS PowerPAIR® • Notebook System Power • POL • Low Current DC/DC 6 x 3.7 Pin 1 3.73 mm G1 1 D1 D1 2 D1 D1 3 G1 S1/D2 (Pin 7) G2 6 S2 5 S2 N-Channel 1 MOSFET 6 mm 4 S1/D2 G2 Ordering Information: SiZ702DT-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel 2 MOSFET S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID Channel-1 Channel-2 30 ± 20 Source Drain Current Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C 13.8b, c 11b, c 14b, c 11.2b, c 50 16a 18 16 PD A 16a 3.7b, c 3.2b, c mJ 27 17.4 30 19 3.9b, c 2.5b, c 4.5b, c 2.9b, c TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e V 16a 16a IDM Pulsed Drain Current Unit W - 55 to 150 260 °C THERMAL RESISTANCE RATINGS Channel-1 Parameter Maximum Junction-to-Ambientb, f t  10 s Symbol RthJA RthJC Channel-2 Typ. Max. Typ. Max. 24 3.5 32 4.6 21 3.2 28 4.2 Unit °C/W Maximum Junction-to-Case (Drain) Steady State Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 67 °C/W for channel-1 and for channel-2. Document Number: 65525 S11-2379-Rev. B, 28-Nov-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ702DT Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage On-State Drain Currentb Forward Transconductanceb VGS = 0 V, ID = 250 µA Ch-1 Ch-2 VDS/TJ ID = 250 µA Ch-1 Ch-2 33 VGS(th)/TJ ID = 250 µA Ch-1 Ch-2 -5 VGS(th) VDS = VGS, ID = 250 µA Ch-1 Ch-2 IGSS VDS = 0 V, VGS = ± 20 V ID(on) b V mV/°C V Ch-1 Ch-2 ± 100 nA VDS = 30 V, VGS = 0 V Ch-1 Ch-2 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C Ch-1 Ch-2 5 VDS 5 V, VGS = 10 V Ch-1 Ch-2 VGS = 10 V, ID = 13.8 A Ch-1 Ch-2 0.010 0.012 VGS = 4.5 V, ID = 12.6 A Ch-1 Ch-2 0.012 0.0145 VDS = 10 V, ID = 13.8 A Ch-1 Ch-2 47 Ch-1 Ch-2 790 Ch-1 Ch-2 190 Ch-1 Ch-2 76 Ch-1 Ch-2 14 21 Ch-1 Ch-2 6.8 11 Ch-1 Ch-2 2.6 Ch-1 Ch-2 1.9 RDS(on) gfs 30 2.5 IDSS Zero Gate Voltage Drain Current Drain-Source On-State Resistance VDS 1 µA 20 A  S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 13.8 A Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg VDS = 15 V, VGS = 4.5 V, ID = 13.8 A f = 1 MHz Ch-1 Ch-2 pF nC 0.4 2 4  Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. www.vishay.com 2 Document Number: 65525 S11-2379-Rev. B, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ702DT Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Ch-1 Ch-2 15 25 Ch-1 Ch-2 12 20 Ch-1 Ch-2 20 30 tf Ch-1 Ch-2 10 15 td(on) Ch-1 Ch-2 10 15 Ch-1 Ch-2 12 20 Ch-1 Ch-2 20 30 Ch-1 Ch-2 10 15 Unit Dynamica Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tr td(off) VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 4.5 V, Rg = 1  VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 10 V, Rg = 1  tf ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD TC = 25 °C IS = 10 A, VGS = 0 V Ch-1 Ch-2 16 Ch-1 Ch-2 50 A Ch-1 Ch-2 0.8 1.2 V Body Diode Reverse Recovery Time trr Ch-1 Ch-2 20 40 ns Body Diode Reverse Recovery Charge Qrr Ch-1 Ch-2 10 20 nC IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Fall Time ta Ch-1 Ch-2 11 Reverse Recovery Rise Time tb Ch-1 Ch-2 9 ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 65525 S11-2379-Rev. B, 28-Nov-11 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ702DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 60 20 VGS = 10 V thru 4 V 16 I D - Drain Current (A) I D - Drain Current (A) 50 40 VGS = 3 V 30 20 12 TC = 25 °C 8 4 10 TC = 125 °C VGS = 2 V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 TC = - 55 °C 0.5 VDS - Drain-to-Source Voltage (V) Output Characteristics 3.5 Transfer Characteristics 0.014 1200 1000 0.012 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) VGS = 4.5 V 0.010 VGS = 10 V Ciss 800 600 400 Coss 0.008 200 Crss 0.006 0 0 10 20 30 40 50 60 0 5 ID - Drain Current (A) 10 15 20 25 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.7 10 R DS(on) - On-Resistance (Normalized) ID = 13.8 A VGS - Gate-to-Source Voltage (V) 30 8 VDS = 15 V 6 VDS = 7.5 V VDS = 24 V 4 2 1.6 ID = 13.8 A 1.5 VGS = 10 V; 4.5 V 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0 0 www.vishay.com 4 3 0.7 - 50 Qg - Total Gate Charge (nC) 0 25 50 75 100 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 6 9 12 15 -- 25 125 150 Document Number: 65525 S11-2379-Rev. B, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ702DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.030 ID = 13.8 A R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.025 10 TJ = 150 °C TJ = 25 °C 1 0.020 TJ = 125 °C 0.015 TJ = 25 °C 0.010 0.005 0.1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 0 1.2 2 4 6 8 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 10 On-Resistance vs. Gate-to-Source Voltage 50 1.9 1.8 1.7 40 1.6 ID = 250 µA Power (W) VGS(th) (V) 1.5 1.4 1.3 1.2 30 20 1.1 10 1.0 0.9 0.8 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 0 0.001 150 0.01 Threshold Voltage 1 Time (s) 10 100 1000 Single Pulse Power 100 Limited by RDS(on)* 10 I D - Drain Current (A) 0.1 100 µs 1 ms 10 ms 1 100 ms 1 s, 10 s 0.1 TA = 25 °C Single Pulse DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 65525 S11-2379-Rev. B, 28-Nov-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ702DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 30 40 20 Power (W) I D - Drain Current (A) 25 30 20 Package Limited 15 10 10 5 0 0 0 25 50 75 100 125 TC - Case Temperature (°C) Current Derating* 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power, Junction-to-Case * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 65525 S11-2379-Rev. B, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ702DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 67 °C/W 3. TJM - T A = PDMZthJA(t) 0.01 10 -4 4. Surface Mounted Single Pulse 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 65525 S11-2379-Rev. B, 28-Nov-11 www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ702DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 60 VGS = 10 V thru 4 V 16 I D - Drain Current (A) I D - Drain Current (A) 50 40 VGS = 3 V 30 20 12 TC = 25 °C 8 4 10 TC = 125 °C VGS = 2 V 0 0.0 0.5 1.0 1.5 2.0 2.5 TC = - 55 °C 0 0.0 3.0 0.5 VDS - Drain-to-Source Voltage (V) Output Characteristics 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) 3.5 Transfer Characteristics 1200 0.014 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1000 0.012 VGS = 4.5 V 0.010 VGS = 10 V Ciss 800 600 400 Coss 0.008 200 Crss 0 0.006 0 10 20 30 40 50 0 60 5 ID - Drain Current (A) 10 15 20 25 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.7 10 R DS(on) - On-Resistance (Normalized) ID = 13.8 A VGS - Gate-to-Source Voltage (V) 30 8 VDS = 15 V 6 VDS = 7.5 V VDS = 24 V 4 2 1.6 ID = 13.8 A 1.5 VGS = 10 V; 4.5 V 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0 0 3 6 9 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 8 12 15 0.7 - 50 -- 25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 150 On-Resistance vs. Junction Temperature Document Number: 65525 S11-2379-Rev. B, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ702DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.030 ID = 13.8 A R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.025 10 TJ = 150 °C TJ = 25 °C 1 0.020 TJ = 125 °C 0.015 TJ = 25 °C 0.010 0.005 0.1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 0 1.2 2 4 6 8 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 10 On-Resistance vs. Gate-to-Source Voltage 50 1.9 1.8 1.7 40 1.6 ID = 250 µA Power (W) VGS(th) (V) 1.5 1.4 1.3 1.2 30 20 1.1 10 1.0 0.9 0.8 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 1000 Limited by RDS(on)* 10 I D - Drain Current (A) 100 100 µs 1 ms 10 ms 1 100 ms 1 s, 10 s 0.1 TA = 25 °C Single Pulse DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 65525 S11-2379-Rev. B, 28-Nov-11 www.vishay.com 9 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ702DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 50 30 25 20 30 20 Power (W) I D - Drain Current (A) 40 Package Limited 15 10 10 5 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power, Junction-to-Case * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 65525 S11-2379-Rev. B, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ702DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 67 °C/W 3. TJM - T A = PDMZthJA(t) 0.01 10 -4 Single Pulse 4. Surface Mounted 10 -3 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 0.1 10 -4 Single Pulse 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65525. Document Number: 65525 S11-2379-Rev. B, 28-Nov-11 www.vishay.com 11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix PowerPAIRTM 6 x 3.7 CASE OUTLINE A D 0.10 C 2X Pin 5 K2 K2 Pin 4 Pin 4 Pin 5 Pin 6 K L Pin 6 E E1 D1 K1 Pin #1 Ident (Optional) Pin 1 Pin 2 0.10 C Pin 3 Pin 2 Pin 3 2X E2 D1 Pin 1 e b BACK SIDE VIEW b1 C A1 C A 0.08 c 0.10 C Z Z MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. MAX. A 0.70 0.75 0.80 0.028 0.030 0.032 A1 0.00 - 0.05 0.000 - 0.002 b 0.46 0.51 0.56 0.018 0.020 0.022 b1 0.20 0.25 0.38 0.008 0.010 0.015 C 0.18 0.20 0.23 0.007 0.008 0.009 D 3.65 3.73 3.81 0.144 0.147 0.150 D1 2.41 2.53 2.65 0.095 0.100 0.104 E 5.92 6.00 6.08 0.233 0.236 0.239 E1 2.62 2.67 2.72 0.103 0.105 0.107 E2 0.87 0.92 0.97 0.034 0.036 0.038 e 1.27 BSC 0.05 BSC K 0.45 TYP. 0.018 TYP. K1 0.66 TYP. 0.026 TYP. K2 L 0.60 TYP. 0.38 0.43 0.024 TYP. 0.48 0.015 0.017 0.019 ECN: S-82772-Rev. B, 17-Nov-08 DWG: 5979 Document Number: 69028 17-Nov-08 www.vishay.com 1 PAD Pattern Vishay Siliconix RECOMMENDED PAD FOR PowerPAIR™ 6 x 3.7 0.3520 (8.941) 0.0220 (0.559) 0.0190 (0.483) 0, 0.11 0.0170 (0.432) 0, 0.03 0.1070 (2.718) 0.1040 (2.642) 0.4390 (11.151) 0, 0 0.0220 (0.559) 0, - 0.0645 0.0170 (0.432) 0.0380 (0.965) - 0.05, - 0.11 0, - 0.11 1 0.0500 (1.27) Recommended PAD for PowerPAIR 6 x 3.7 Dimensions in inches (mm) Keep-out 0.3520 (8.94) x 0.4390 (11.151) Document Number: 65278 Revision: 04-Aug-09 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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