SIZ710DT-T1-GE3

SiZ710DT Vishay Siliconix N-Channel 20 V (D-S) MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) () ID (A) 0.0068 at VGS = 10 V 16a 0.0090 at VGS = 4.5 V 16a 0.0033 at VGS = 10 V 35a 0.0043 at VGS = 4.5 V 35a Qg (Typ.) 6.9 nC 18.2 nC 3.73 mm G1 1 2 6 S1/D2 (Pin 7) S2 5 D1 D1 D1 G2 APPLICATIONS • Notebook System Power • POL • Synchronous Buck Converter PowerPAIR® 6 x 3.7 Pin 1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC S2 D1 3 G1 N-Channel 1 MOSFET S1/D2 6 mm G2 4 N-Channel 2 MOSFET Ordering Information: SiZ710DT-T1-GE3 (Lead (Pb)-free and Halogen-free) S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID Continuous Source Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Channel-2 20 ± 20 a 16 16a 35 35a 16a, b, c 15b, c 70 16a 30b, c 24b, c 100 3.2b, c 20 20 27 17 35a 3.8b, c 30 45 48 31 3.9b, c 2.5b, c 4.6b, c 3b, c TJ, Tstg Unit V a IDM Pulsed Drain Current Channel-1 - 55 to 150 260 A mJ W °C THERMAL RESISTANCE RATINGS Channel-1 Parameter Symbol RthJA RthJC Typ. Max. Channel-2 Typ. Max. Unit t  10 s 24 32 20 27 Maximum Junction-to-Ambientb, f °C/W Maximum Junction-to-Case (Drain) Steady State 3.5 4.6 2 2.6 Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 67 °C/W for channel-1 and 65 °C/W for channel-2. Document Number: 65733 S11-2379-Rev. B, 28-Nov-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ710DT Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate Source Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 µA Ch-1 20 VGS = 0 V, ID = 250 µA Ch-2 20 ID = 250 µA Ch-1 ID = 250 µA Ch-2 20 ID = 250 µA Ch-1 - 4.8 V 19 mV/°C ID = 250 µA Ch-2 VDS = VGS, ID = 250 µA Ch-1 1 2.2 VDS = VGS, ID = 250 µA Ch-2 1 2.2 - 5.3 Ch-1 ± 100 Ch-2 ± 100 VDS = 20 V, VGS = 0 V Ch-1 1 VDS = 20 V, VGS = 0 V Ch-2 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C Ch-1 5 VDS = 0 V, VGS = ± 20 V VDS = 20 V, VGS = 0 V, TJ = 55 °C Ch-2 VDS 5 V, VGS = 10 V Ch-1 15 VDS 5 V, VGS = 10 V Ch-2 20 VGS = 10 V, ID = 19 A Ch-1 0.0055 0.0068 VGS = 10 V, ID = 20 A Ch-2 0.0027 0.0033 VGS = 4.5 V, ID = 16.5 A Ch-1 0.0072 0.0090 VGS = 4.5 V, ID = 20 A Ch-2 0.0034 0.0043 VDS = 10 V, ID = 19 A Ch-1 45 VDS = 10 V, ID = 20 A Ch-2 85 V nA µA 5 A  S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Crss Qg Channel-1 VDS = 10 V, VGS = 0 V, f = 1 MHz Channel-2 VDS = 10 V, VGS = 0 V, f = 1 MHz Rg 820 Ch-2 2310 Ch-1 290 Ch-2 730 Ch-1 115 pF Ch-2 305 VDS = 10 V, VGS = 10 V, ID = 19 A Ch-1 11.5 18 VDS = 10 V, VGS = 10 V, ID = 20 A Ch-2 38 60 Ch-1 6.9 11 Channel-1 VDS = 10 V, VGS = 4.5 V, ID = 16.8 A Ch-2 18.2 28 Ch-1 2.4 Channel-2 VDS = 10 V, VGS = 4.5 V, ID = 20 A Ch-2 6.6 Ch-1 1.7 Qgs Qgd Ch-1 Ch-2 f = 1 MHz nC 4.8 Ch-1 0.3 1.3 2.6 Ch-2 0.2 0.8 1.6  Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. www.vishay.com 2 Document Number: 65733 S11-2379-Rev. B, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ710DT Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Ch-1 15 30 Ch-2 25 50 Ch-1 15 30 Ch-2 15 30 Ch-1 20 40 Ch-2 30 60 Ch-1 12 25 Ch-2 12 25 Ch-1 10 20 Ch-2 15 30 Ch-1 12 25 Ch-2 8 15 Ch-1 20 40 Ch-2 30 60 Ch-1 10 20 Ch-2 10 20 Unit Dynamica Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf td(on) tr Channel-1 VDD = 10 V, RL = 1  ID  10 A, VGEN = 4.5 V, Rg = 1  Channel-2 VDD = 10 V, RL = 1  ID  10 A, VGEN = 4.5 V, Rg = 1  Channel-1 VDD = 10 V, RL = 1  ID  10 A, VGEN = 10 V, Rg = 1  tf Channel-2 VDD = 10 V, RL = 1  ID  10 A, VGEN = 10 V, Rg = 1  IS TC = 25 °C td(off) ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time ISM VSD Ch-1 16 Ch-2 35 Ch-1 70 Ch-2 100 IS = 10 A, VGS = 0 V Ch-1 0.8 1.2 IS = 10 A, VGS = 0 V Ch-2 0.78 1.2 Ch-1 15 30 Ch-2 25 50 Ch-1 5.5 11 Ch-2 17 35 trr Body Diode Reverse Recovery Charge Qrr Channel-1 IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Fall Time ta Channel-2 IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Rise Time tb A Ch-1 6 Ch-2 14 Ch-1 9 Ch-2 11 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 65733 S11-2379-Rev. B, 28-Nov-11 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ710DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 70 20 V GS = 10 V thru 4 V 60 50 I D - Drain Current (A) I D - Drain Current (A) 16 40 V GS = 3 V 30 20 12 8 T C = 25 °C 4 10 T C = 125 °C V GS = 2 V 0 0.0 0.5 1.0 1.5 T C = - 55 °C 0 0.0 2.0 0.5 V DS - Drain-to-Source Voltage (V) 0.010 1000 V GS = 10 V 2.5 Ciss C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1200 0.006 2.0 Transfer Characteristics 0.012 V GS = 4.5 V 1.5 V GS - Gate-to-Source Voltage (V) Output Characteristics 0.008 1.0 0.004 800 600 400 0.002 200 0.000 0 Coss Crss 0 10 20 30 40 50 60 70 0 5 15 20 V DS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 10 1.6 8 R DS(on) - On-Resistance (Normalized) ID = 16 A VGS - Gate-to-Source Voltage (V) 10 V DS = 10 V V DS = 5 V 6 V DS = 16 V 4 2 0 0 3 6 9 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 12 15 ID = 19 A 1.4 V GS = 10 V, V GS = 4.5 V 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 T J - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 65733 S11-2379-Rev. B, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ710DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.0200 ID = 19 A T J = 150 °C R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.0175 T J = 25 °C 10 0.0150 0.0125 0.0100 T J = 125 °C 0.0075 T J = 25 °C 0.0050 0.0025 1 0.0 0.0000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 V GS - Gate-to-Source Voltage (V) V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 50 2.0 1.8 40 Power (W) VGS(th) (V) 1.6 1.4 ID = 250 μA 30 20 1.2 10 1.0 0.8 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 10 T J - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 1000 100 Limited by RDS(on) * I D - Drain Current (A) 100 μs 10 1 ms 10 ms 1 100 ms 1s 10 s TA = 25 °C Single Pulse 0.1 DC BVDSS Limited 0.01 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 65733 S11-2379-Rev. B, 28-Nov-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ710DT Vishay Siliconix 60 30 50 25 40 20 Power (W) I D - Drain Current (A) CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 30 20 15 10 Package Limited 10 5 0 0 0 25 50 75 100 125 150 25 50 75 100 125 T C - Case Temperature (°C) T C - Case Temperature (°C) Current Derating* Power, Junction-to-Case 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 65733 S11-2379-Rev. B, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ710DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 67 °C/W 3. T JM - T A = PDMZthJA(t) 0.01 10 -4 4. Surface Mounted Single Pulse 10 -3 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 65733 S11-2379-Rev. B, 28-Nov-11 www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ710DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 20 V GS = 10 V thru 4 V 16 I D - Drain Current (A) I D - Drain Current (A) 80 V GS = 3 V 60 40 12 8 T C = 25 °C 20 4 T C = 125 °C V GS = 2 V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 T C = - 55 °C 0.5 1.0 2.0 2.5 3.0 V GS - Gate-to-Source Voltage (V) V DS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.005 3000 Ciss 2500 0.004 V GS = 4.5 V C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1.5 V GS = 10 V 0.003 0.002 2000 1500 1000 0.001 Coss 500 Crss 0.000 0 0 20 40 60 80 100 0 5 ID - Drain Current (A) 15 20 V DS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.5 10 ID = 20 A 8 R DS(on) - On-Resistance (Normalized) ID = 20 A VGS - Gate-to-Source Voltage (V) 10 V DS = 10 V V DS = 5 V 6 V DS = 16 V 4 2 0 0 8 16 24 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 8 32 40 1.4 1.3 V GS = 10 V, V GS = 4.5 V 1.2 1.1 1.0 0.9 0.8 0.7 - 50 - 25 0 25 50 75 100 125 150 T J - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 65733 S11-2379-Rev. B, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ710DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.012 100 ID = 20 A R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.010 T J = 25 °C T J = 150 °C 10 0.008 0.006 T J = 125 °C 0.004 T J = 25 °C 0.002 1 0.0 0.2 0.4 0.6 0.8 1.0 0.000 0 1.2 2 4 6 8 10 V SD - Source-to-Drain Voltage (V) V GS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 50 2.0 ID = 250 μA 1.8 40 Power (W) VGS(th) (V) 1.6 1.4 30 20 1.2 10 1.0 0.8 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 1 10 T J - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 1000 100 Limited by R DS(on)* 100 μs I D - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 10 s 0.1 DC TA = 25 °C Single Pulse BVDSS Limited 0.01 0.01 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 65733 S11-2379-Rev. B, 28-Nov-11 www.vishay.com 9 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ710DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 120 50 40 80 Power (W) I D - Drain Current (A) 100 60 30 20 Package Limited 40 10 20 0 0 0 25 50 75 100 T C - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 T C - Case Temperature (°C) Power, Junction-to-Case * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 65733 S11-2379-Rev. B, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ710DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 65 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65733. Document Number: 65733 S11-2379-Rev. B, 28-Nov-11 www.vishay.com 11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix PowerPAIRTM 6 x 3.7 CASE OUTLINE A D 0.10 C 2X Pin 5 K2 K2 Pin 4 Pin 4 Pin 5 Pin 6 K L Pin 6 E E1 D1 K1 Pin #1 Ident (Optional) Pin 1 Pin 2 0.10 C Pin 3 Pin 2 Pin 3 2X E2 D1 Pin 1 e b BACK SIDE VIEW b1 C A1 C A 0.08 c 0.10 C Z Z MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. MAX. A 0.70 0.75 0.80 0.028 0.030 0.032 A1 0.00 - 0.05 0.000 - 0.002 b 0.46 0.51 0.56 0.018 0.020 0.022 b1 0.20 0.25 0.38 0.008 0.010 0.015 C 0.18 0.20 0.23 0.007 0.008 0.009 D 3.65 3.73 3.81 0.144 0.147 0.150 D1 2.41 2.53 2.65 0.095 0.100 0.104 E 5.92 6.00 6.08 0.233 0.236 0.239 E1 2.62 2.67 2.72 0.103 0.105 0.107 E2 0.87 0.92 0.97 0.034 0.036 0.038 e 1.27 BSC 0.05 BSC K 0.45 TYP. 0.018 TYP. K1 0.66 TYP. 0.026 TYP. K2 L 0.60 TYP. 0.38 0.43 0.024 TYP. 0.48 0.015 0.017 0.019 ECN: S-82772-Rev. B, 17-Nov-08 DWG: 5979 Document Number: 69028 17-Nov-08 www.vishay.com 1 PAD Pattern Vishay Siliconix RECOMMENDED PAD FOR PowerPAIR™ 6 x 3.7 0.3520 (8.941) 0.0220 (0.559) 0.0190 (0.483) 0, 0.11 0.0170 (0.432) 0, 0.03 0.1070 (2.718) 0.1040 (2.642) 0.4390 (11.151) 0, 0 0.0220 (0.559) 0, - 0.0645 0.0170 (0.432) 0.0380 (0.965) - 0.05, - 0.11 0, - 0.11 1 0.0500 (1.27) Recommended PAD for PowerPAIR 6 x 3.7 Dimensions in inches (mm) Keep-out 0.3520 (8.94) x 0.4390 (11.151) Document Number: 65278 Revision: 04-Aug-09 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000