SIZ720DT-T1-GE3

SiZ720DT Vishay Siliconix N-Channel 20-V (D-S) MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) () ID (A) 0.0087 at VGS = 10 V 16a 0.0115 at VGS = 4.5 V 16a 0.0062 at VGS = 10 V 16a 0.0080 at VGS = 4.5 V 16a Qg (Typ.) 7.3 nC 21 nC PowerPAIR® 6 x 3.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Notebook System Power • POL • Low Current DC/DC D1 Pin 1 3.73 mm G1 1 D1 2 D1 S2 5 G1 N-Channel 1 MOSFET S1/D2 (Pin 7) G2 6 D1 3 S2 S1/D2 6 mm G2 4 N-Channel 2 MOSFET Ordering Information: SiZ720DT-T1-GE3 (Lead (Pb)-free and Halogen-free) S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Channel-2 20 ± 20 Unit V 16a 16a ID 16a, b, c 16a, b, c IDM Pulsed Drain Current Source Drain Current Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Channel-1 70 16a A 70 3.2b, c 18 16 27 17 16a 3.8b, c 20 20 48 31 3.9b, c 2.5b, c 4.6b, c 3b, c TJ, Tstg - 55 to 150 260 mJ W °C THERMAL RESISTANCE RATINGS Channel-1 Parameter Symbol RthJA RthJC Typ. Max. Channel-2 Typ. Max. Unit t  10 s 24 32 20 27 Maximum Junction-to-Ambientb, f °C/W Maximum Junction-to-Case (Drain) Steady State 3.5 4.6 2 2.6 Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 67 °C/W for channel-1 and 65 °C/W for channel-2. Document Number: 65579 S11-2379-Rev. B, 28-Nov-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ720DT Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 µA Ch-1 20 VGS = 0 V, ID = 250 µA Ch-2 20 ID = 250 µA Ch-1 ID = 250 µA Ch-2 20 ID = 250 µA Ch-1 - 5.2 V 21 mV/°C ID = 250 µA Ch-2 VDS = VGS, ID = 250 µA Ch-1 1 2 VDS = VGS, ID = 250 µA Ch-2 1 2 - 5.5 Ch-1 ± 100 Ch-2 ± 100 VDS = 20 V, VGS = 0 V Ch-1 1 VDS = 20 V, VGS = 0 V Ch-2 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C Ch-1 5 VDS = 0 V, VGS = ± 20 V VDS = 20 V, VGS = 0 V, TJ = 55 °C Ch-2 VDS 5 V, VGS = 10 V Ch-1 20 VDS 5 V, VGS = 10 V Ch-2 20 V nA µA 5 A VGS = 10 V, ID = 16.8 A Ch-1 0.0070 0.0087 VGS = 10 V, ID = 20 A Ch-2 0.0050 0.0062 VGS = 4.5 V, ID = 14.6 A Ch-1 0.0091 0.0115 0.0065 0.0080 VGS = 4.5 V, ID = 20 A Ch-2 VDS = 10 V, ID = 16.8 A Ch-1 60 VDS = 10 V, ID = 20 A Ch-2 60  S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Crss Qg Channel-1 VDS = 10 V, VGS = 0 V, f = 1 MHz Channel-2 VDS = 10 V, VGS = 0 V, f = 1 MHz Rg 825 Ch-2 2350 Ch-1 295 Ch-2 800 Ch-1 130 pF Ch-2 350 VDS = 10 V, VGS = 10 V, ID = 16.8 A Ch-1 14.8 23 VDS = 10 V, VGS = 10 V, ID = 20 A Ch-2 44 66 Ch-1 7.3 11 Channel-1 VDS = 10 V, VGS = 4.5 V, ID = 16.8 A Ch-2 21 32 Ch-1 2.5 Channel-2 VDS = 10 V, VGS = 4.5 V, ID = 20 A Ch-2 6.8 Ch-1 2.3 Qgs Qgd Ch-1 Ch-2 f = 1 MHz nC 5.9 Ch-1 0.4 2 4 Ch-2 0.3 1.5 3  Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. www.vishay.com 2 Document Number: 65579 S11-2379-Rev. B, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ720DT Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Ch-1 15 25 Ch-2 25 40 Ch-1 15 25 Ch-2 17 30 Ch-1 18 30 Ch-2 35 55 Ch-1 12 20 Ch-2 15 25 Ch-1 10 15 Ch-2 15 25 Ch-1 10 20 Ch-2 9 15 Ch-1 20 30 Ch-2 32 50 Ch-1 10 20 Ch-2 10 15 Unit Dynamica Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf td(on) tr Channel-1 VDD = 10 V, RL = 1  ID  10 A, VGEN = 4.5 V, Rg = 1  Channel-2 VDD = 10 V, RL = 1  ID  10 A, VGEN = 4.5 V, Rg = 1  Channel-1 VDD = 10 V, RL = 1  ID  10 A, VGEN = 10 V, Rg = 1  tf Channel-2 VDD = 10 V, RL = 1  ID  10 A, VGEN = 10 V, Rg = 1  IS TC = 25 °C td(off) ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time ISM VSD 16 Ch-1 70 Ch-2 0.8 1.2 IS = 10 A, VGS = 0 V Ch-2 0.78 1.2 Ch-1 10 20 Ch-2 22 40 Ch-1 2.5 5 Ch-2 11 20 Ch-1 5.5 Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Channel-2 IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C A 70 Ch-1 trr tb 16 Ch-2 IS = 10 A, VGS = 0 V Channel-1 IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Rise Time Ch-1 Ch-2 11 Ch-1 4.5 Ch-2 11 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 65579 S11-2379-Rev. B, 28-Nov-11 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ720DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 70 20 VGS = 10 V thru 4 V 60 50 40 I D - Drain Current (A) I D - Drain Current (A) 16 VGS = 3 V 30 20 12 8 TC = 25 °C 4 TC = 125 °C 10 VGS = 2 V 0.5 1.0 1.5 2.0 2.5 3.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.014 1200 0.012 1000 3.0 Ciss 0.010 VGS = 4.5 V 0.008 VGS = 10 V 0.006 0.004 800 600 Coss 400 200 0.002 Crss 0 0 10 20 30 40 50 60 70 0 5 10 15 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 20 1.6 10 R DS(on) - On-Resistance (Normalized) ID = 16.8 A VGS - Gate-to-Source Voltage (V) TC = - 55 °C 0 0.0 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0 0.0 8 VDS = 16 V 6 VDS = 5 V VDS = 20 V 4 2 0 0 www.vishay.com 4 4 8 12 16 ID = 16.8 A VGS = 10 V 1.4 1.2 VGS = 4.5 V 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 Document Number: 65579 S11-2379-Rev. B, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ720DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.020 TJ = 150 °C R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 16.8 A TJ = 25 °C 10 0.015 TJ = 125 °C 0.010 TJ = 25 °C 0.005 0.000 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.0 50 1.9 1.8 40 ID = 250 µA 1.7 Power (W) VGS(th) (V) 1.6 1.5 1.4 1.3 30 20 1.2 10 1.1 1.0 0.9 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 1000 Time (s) TJ - Temperature (°C) Threshold Voltage Single Pulse Power 100 I D - Drain Current (A) Limited by RDS(on)* 100 µs 10 1 ms 10 ms 1 100 ms 1s 10 s 0.1 TA = 25 °C Single Pulse DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 65579 S11-2379-Rev. B, 28-Nov-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ720DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 50 30 25 20 30 20 Power (W) I D - Drain Current (A) 40 Package Limited 15 10 10 5 0 0 0 25 50 75 100 125 150 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power, Junction-to-Case 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 65579 S11-2379-Rev. B, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ720DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 67 °C/W 3. TJM - T A = PDMZthJA(t) 0.01 10 -4 4. Surface Mounted Single Pulse 10 -3 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 65579 S11-2379-Rev. B, 28-Nov-11 www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ720DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 70 20 VGS = 10 V thru 4 V 60 50 I D - Drain Current (A) I D - Drain Current (A) 16 VGS = 3 V 40 30 20 12 8 TC = 25 °C 4 TC = 125 °C 10 VGS = 2 V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 TC = - 55 °C 0.5 1.0 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.0080 3000 0.0075 Ciss 2400 0.0070 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1.5 VGS = 4.5 V 0.0065 0.0060 0.0055 VGS = 10 V 0.0050 1800 1200 Coss 600 Crss 0.0045 0.0040 0 0 10 20 30 40 50 60 70 0 5 15 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 10 1.6 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 10 ID = 20 A 8 VDS = 16 V 6 VDS = 5 V VDS = 20 V 4 2 0 0 9 18 27 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 8 36 45 ID = 20 A VGS = 10 V 1.4 1.2 VGS = 4.5 V 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 65579 S11-2379-Rev. B, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ720DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.020 100 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 20 A TJ = 150 °C 10 TJ = 25 °C 1 0.1 0.0 0.015 0.010 TJ = 125 °C TJ = 25 °C 0.005 0.000 0.2 0.4 0.6 0.8 1.0 0 1.2 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 50 2.0 1.8 40 ID = 250 µA Power (W) VGS(th) (V) 1.6 1.4 30 20 1.2 10 1.0 0.8 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 1 10 100 1000 Time (s) TJ - Temperature (°C) Threshold Voltage Single Pulse Power 100 100 µs Limited by RDS(on)* I D - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 10 s 0.1 DC TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 65579 S11-2379-Rev. B, 28-Nov-11 www.vishay.com 9 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ720DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 80 50 Power (W) I D - Drain Current (A) 40 60 40 30 20 Package Limited 20 10 0 0 0 25 50 75 100 125 150 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power, Junction-to-Case 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 65579 S11-2379-Rev. B, 28-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ720DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 65 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65579. Document Number: 65579 S11-2379-Rev. B, 28-Nov-11 www.vishay.com 11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix PowerPAIRTM 6 x 3.7 CASE OUTLINE A D 0.10 C 2X Pin 5 K2 K2 Pin 4 Pin 4 Pin 5 Pin 6 K L Pin 6 E E1 D1 K1 Pin #1 Ident (Optional) Pin 1 Pin 2 0.10 C Pin 3 Pin 2 Pin 3 2X E2 D1 Pin 1 e b BACK SIDE VIEW b1 C A1 C A 0.08 c 0.10 C Z Z MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. MAX. A 0.70 0.75 0.80 0.028 0.030 0.032 A1 0.00 - 0.05 0.000 - 0.002 b 0.46 0.51 0.56 0.018 0.020 0.022 b1 0.20 0.25 0.38 0.008 0.010 0.015 C 0.18 0.20 0.23 0.007 0.008 0.009 D 3.65 3.73 3.81 0.144 0.147 0.150 D1 2.41 2.53 2.65 0.095 0.100 0.104 E 5.92 6.00 6.08 0.233 0.236 0.239 E1 2.62 2.67 2.72 0.103 0.105 0.107 E2 0.87 0.92 0.97 0.034 0.036 0.038 e 1.27 BSC 0.05 BSC K 0.45 TYP. 0.018 TYP. K1 0.66 TYP. 0.026 TYP. K2 L 0.60 TYP. 0.38 0.43 0.024 TYP. 0.48 0.015 0.017 0.019 ECN: S-82772-Rev. B, 17-Nov-08 DWG: 5979 Document Number: 69028 17-Nov-08 www.vishay.com 1 PAD Pattern Vishay Siliconix RECOMMENDED PAD FOR PowerPAIR™ 6 x 3.7 0.3520 (8.941) 0.0220 (0.559) 0.0190 (0.483) 0, 0.11 0.0170 (0.432) 0, 0.03 0.1070 (2.718) 0.1040 (2.642) 0.4390 (11.151) 0, 0 0.0220 (0.559) 0, - 0.0645 0.0170 (0.432) 0.0380 (0.965) - 0.05, - 0.11 0, - 0.11 1 0.0500 (1.27) Recommended PAD for PowerPAIR 6 x 3.7 Dimensions in inches (mm) Keep-out 0.3520 (8.94) x 0.4390 (11.151) Document Number: 65278 Revision: 04-Aug-09 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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